WO2005015261A3 - Real-time radiation sensor calibration - Google Patents

Real-time radiation sensor calibration Download PDF

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Publication number
WO2005015261A3
WO2005015261A3 PCT/US2004/025637 US2004025637W WO2005015261A3 WO 2005015261 A3 WO2005015261 A3 WO 2005015261A3 US 2004025637 W US2004025637 W US 2004025637W WO 2005015261 A3 WO2005015261 A3 WO 2005015261A3
Authority
WO
WIPO (PCT)
Prior art keywords
pixel
real
directed
radiation sensor
sensor calibration
Prior art date
Application number
PCT/US2004/025637
Other languages
French (fr)
Other versions
WO2005015261A2 (en
Inventor
Thomas P Allen
Neal R Butler
Original Assignee
Bae Systems Information
Thomas P Allen
Neal R Butler
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bae Systems Information, Thomas P Allen, Neal R Butler filed Critical Bae Systems Information
Priority to EP18163382.7A priority Critical patent/EP3413023A3/en
Priority to EP04780469A priority patent/EP1664692A4/en
Publication of WO2005015261A2 publication Critical patent/WO2005015261A2/en
Publication of WO2005015261A3 publication Critical patent/WO2005015261A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G01J5/064—Ambient temperature sensor; Housing temperature sensor; Constructional details thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/70—Passive compensation of pyrometer measurements, e.g. using ambient temperature sensing or sensing of temperature within housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/80—Calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation

Abstract

One embodiment of the invention is directed to methods and apparatus for determining a variation of a calibration parameter of a pixel of the thermal sensor (32) during operation of the imaging apparatus, after an initial calibration procedure. Another embodiment of the invention is directed to methods and apparatus for calculating a gain calibration parameter using first and second ambient temperature values (36) and respective first and second resistance values for a pixel of a sensor (32). A further embodiment of the invention is directed to calculating an offset calibration parameter for at least one pixel using a gain of the at least one pixel between first and second times and an ambient temperature at a third time, wherein the pixel is exposed to both scene and ambient radiation at the third time.
PCT/US2004/025637 2003-08-05 2004-08-05 Real-time radiation sensor calibration WO2005015261A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP18163382.7A EP3413023A3 (en) 2003-08-05 2004-08-05 Real time radiation sensor calibration
EP04780469A EP1664692A4 (en) 2003-08-05 2004-08-05 Real-time radiation sensor calibration

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/634,215 US7030378B2 (en) 2003-08-05 2003-08-05 Real-time radiation sensor calibration
US10/634,215 2003-08-05

Publications (2)

Publication Number Publication Date
WO2005015261A2 WO2005015261A2 (en) 2005-02-17
WO2005015261A3 true WO2005015261A3 (en) 2005-09-22

Family

ID=34115999

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/025637 WO2005015261A2 (en) 2003-08-05 2004-08-05 Real-time radiation sensor calibration

Country Status (3)

Country Link
US (1) US7030378B2 (en)
EP (2) EP3413023A3 (en)
WO (1) WO2005015261A2 (en)

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