WO1995017019A1 - Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices - Google Patents
Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices Download PDFInfo
- Publication number
- WO1995017019A1 WO1995017019A1 PCT/US1994/013940 US9413940W WO9517019A1 WO 1995017019 A1 WO1995017019 A1 WO 1995017019A1 US 9413940 W US9413940 W US 9413940W WO 9517019 A1 WO9517019 A1 WO 9517019A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- gallium nitride
- nitride
- aluminum nitride
- single crystal
- Prior art date
Links
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 103
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 100
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000013078 crystal Substances 0.000 claims abstract description 36
- 230000007704 transition Effects 0.000 claims abstract description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 11
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000001429 visible spectrum Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Definitions
- the present invention relates to semiconductor devices formed using gallium nitride, and in particular relates to a method of forming gallium nitride devices using silicon carbide substrates.
- the present invention provides a gallium nitride (GaN) structure and resulting devices.
- GaN gallium nitride
- GaN gallium nitride
- Gallium nitride is a semiconductor compound of interest because its direct bandgap provides it with the potential to emit blue light with high efficiency.
- UV ultraviolet
- LEDs also referred to as “semiconductor optical devices”
- semiconductor optical devices can produce light or electromagnetic radiation from the infrared to the green wavelengths (approximately 1000-500 nanometers; 1.2-2.5 eV) .
- blue light is also required as the third primary color of the visible spectrum in order to give complete full color imaging and graphics in appropriate applications.
- Gallium nitride (GaN) is an interesting candidate for blue light-emitting diodes because of its relatively direct wide bandgap.
- the color of light as seen by the human eye represents a wavelength (or its corresponding frequency) .
- the wavelength and frequency correspond to a given energy value.
- particular colors of the visible spectrum can only be produced by materials in which energy transitions of the required amount can take place.
- the color that can be produced by a light-emitting diode of a given semiconductor material is a direct function of the material's bandgap. Wider bandgaps permit greater energy transitions which in turn produce higher energy photons leading to higher frequency (lower wavelength) colors (frequency being directly proportional to the energy transition and wavelength being inversely proportional to frequency) .
- Gallium nitride has a sufficient bandgap (3.4 eV) to emit any color in the visible spectrum, and particularly blue light, but suffers from certain fundamental difficulties.
- One difficulty in using gallium nitride for semiconductor light-emitting diodes is the difficulty in identifying a suitable substrate material.
- LEDs emit light when current (a flow of electrons) passes across a junction between p-type and n-type layers of a semiconductor material.
- electrons and electron vacancies (holes) recombine, photons are emitted of a wavelength corresponding in some fashion to the material's bandgap as set forth above.
- such layers must be characterized as single crystal (“epitaxial”) layers .
- the substrate will greatly influence the epitaxial growth mechanism and quality that will take place upon it.
- the crystal lattice parameters of the substrate and those of the epitaxial layer must be either identical or reasonably close to one another.
- a crystal layer may grow on a non-matching substrate, but it will grow in an amorphous form or full of defects, either of which will essentially destroy its useful electronic or electro-optical properties. It is well established that the crystal structures of epitaxial layers of gallium nitride are very strongly influenced by the substrate material and its orientation.
- Identifying a suitable substrate for gallium nitride has been a difficult task for researchers as gallium nitride bulk substrates have never been successfully produced.
- Sapphire Al 2 0 3
- sapphire has provided a somewhat useful, although less than ideal, thermal and crystal match for gallium nitride.
- Sapphire has one glaring disadvantage: its lack of conductivity; i.e., sapphire is very difficult to dope to produce a conductive substrate.
- all of the electrical contacts to the device (usually two contacts for LEDs) must be made other than to the substrate.
- gallium nitride devices formed on sapphire substrates typically require that at least two electrical leads be placed on the same surface of the device.
- a different LED structure is often preferred, however, which is referred to as a "vertical" structure, and one requiring that the LED be formed on a conductive substrate.
- electrical contacts can be made to the top and bottom of the device rather than both two on the top, or one or both on the side, all of which arrangements are usually more difficult to engineer than is the top and bottom contact orientation of a typical LED.
- Silicon carbide has an appropriate thermal match with gallium nitride, i.e., the coefficients of linear expansion for both materials are quite similar. Silicon carbide can be conductively doped, and indeed is a blue light- emitter in its own right; see e.g., Edmond, et al . U.S. Patents No. 4,918,497 and 5,027,168, both of which are assigned to the assignee of the present invention.
- Silicon carbide has a better, but not identical lattice match with gallium nitride, however, making high quality epitaxial layers of GaN difficult to produce directly on SiC.
- SIC's lattice match is closer to GaN, however, than is sapphire's (sapphire has a 15% lattice mismatch with GaN, SiC has 3.5% mismatch) .
- sapphire's sapphire's
- the invention meets this object with a transition crystal structure that provides a good lattice and thermal match between single crystal silicon carbide and the layer of single crystal gallium nitride.
- the transition structure comprises a buffer formed of a first layer of gallium nitride and aluminum nitride (AlN) , and a second layer of gallium nitride and aluminum nitride adjacent to the first layer and in which the mole percentage of aluminum nitride is substantially different from the mole percentage of aluminum nitride in the first layer.
- the invention comprises device precursor structures that incorporate the buffer layer, and in yet another embodiment, the invention comprises various vertical devices themselves that incorporate the novel buffer layer.
- Figure 1 is a schematic cross-sectional view of a transition structure according to the present invention
- Figure 2 is a schematic cross-sectional view of a light-emitting diode according to the present invention
- Figure 3 is a cross-sectional schematic view of yet another light-emitting diode
- Figure 4 is a third embodiment of a light- emitting diode that incorporates the structure of the present invention.
- Figure 5 i-s a secondary ion mass spectrometer
- Figure 6 is a plot of doping level versus depth, measured by differential capacitance-voltage measurements using mercury (Hg) contacts for a gallium nitride epitaxial layer according to the present invention.
- Figures 7-9 are optical micrographs of crystal surfaces that do not incorporate the present invention.
- Figures 10-12 are optical micrographs of the surfaces of crystals of gallium nitride that incorporate the structure of the present invention.
- the present invention is a transition crystal structure for providing a good lattice and thermal (coefficient of thermal expansion) match between single crystal silicon carbide and a layer of single crystal gallium nitride.
- the transition structure is schematically illustrated in cross-section in Figure 1 and is broadly designated at 20.
- the predominant feature of the transition structure is a buffer designated by the brackets at 21.
- the buffer is formed of a first layer of gallium nitride and aluminum nitride 22 and a second layer 23 of gallium nitride and aluminum nitride adjacent to the first layer 22.
- the mole percentage of aluminum nitride in the second layer 23 is substantially different from the mole percentage of aluminum nitride in the first layer 22.
- the transition structure includes a layer of single crystal gallium nitride 24 upon the second layer 23 of gallium nitride and aluminum nitride as well as a single crystal substrate of silicon carbide 25 and a layer of aluminum nitride 26 upon the silicon carbide substrate.
- the percentage of gallium nitride in the first layer 22 is greater than the mole percentage of aluminum nitride in that layer.
- the mole percentage of aluminum nitride is greater than the mole percentage of gallium nitride. This is a somewhat unexpected structure which has nevertheless been found to give excellent results.
- the layer 23 with the smaller mole percentage of gallium nitride is directly adjacent the epitaxial layer of gallium nitride 24.
- the first layer of gallium nitride and aluminum nitride 22 is between about 20 and 50 mole percent aluminum nitride with a mole percentage of about 30 percent aluminum nitride being most preferred.
- the mole percentage of aluminum nitride is between about 60 and 95 percent, with a mole percentage of about 90 percent aluminum nitride most preferred.
- gallium nitride layers have been formed with donor concentrations as low as about lxlO 16 cm “3 (Fig. 6) .
- the invention can comprise a vertical device precursor structure formed of a silicon carbide substrate 25, the buffer 21 on the substrate 25, and a single crystal layer 24 of gallium nitride on the buffer.
- the buffer 21 is most preferably formed of three layers, a layer of aluminum nitride 26 on the silicon carbide, a first layer of gallium nitride and aluminum nitride 22 in which the mole percentage of gallium nitride is greater than the mole percentage of aluminum nitride, and a second layer of gallium nitride and aluminum nitride 23 adjacent to the first layer 22 and in which the mole percentage of aluminum nitride is greater than the mole percentage of gallium nitride.
- Figure 2 illustrates a light-emitting diode broadly designated at 30.
- the diode 30 comprises a single crystal silicon carbide substrate 31, a buffer designated by the bracket at 32, a first single crystal layer of gallium nitride 33 on the buffer 32 and having a first conductivity type, and a second single crystal layer of gallium nitride 34 upon the first layer 33, with the second layer having the opposite conductivity type from the first layer so that the first and second layers 33 and 34 form a p-n junction therebetween.
- Ohmic contacts 35 and 36 are made to the substrate 31 and to the second gallium nitride layer 34.
- the buffer 32 comprises an epitaxial layer of aluminum nitride 37 on the silicon carbide substrate 31, a first layer of gallium nitride and aluminum nitride 40 in which the mole percentage of gallium " nitride is greater than the mole percentage of aluminum nitride, and a second layer of gallium nitride and aluminum nitride 41 adjacent to the first layer, and in which the mole percentage of aluminum nitride is greater than the mole percentage of gallium nitride.
- the buffer 32 is undoped and acts as an insulator, and thus the illustrated LED 30 further comprises shorting contacts 42 and 43 for providing an electrical path between the substrate 31 and the first single crystal layer of gallium nitride 33.
- FIG. 3 shows a second LED embodiment according to the present invention broadly designated at 45.
- the diode 45 includes a silicon carbide substrate 46, the buffer broadly designated by the bracket at 47, a first layer of gallium nitride 48, a second layer of gallium nitride 49 having the opposite conductivity type from the layer 48, and a layer of a gallium nitride alloy 50 between the respective gallium nitride layers 48 and 49.
- the alloy layer 50 has the same conductivity type as the first layer 48 of gallium nitride so that a p-n junction is formed between the second gallium nitride layer 49 and the gallium nitride alloy layer 50.
- the substrate 46 also has the same conductivity type as the first gallium nitride layer 48.
- the alloy layer comprises indium gallium nitride (InGaN) and results in a device which demonstrates a peak emission at a wavelength of between about 410 and 470 nanometers (nm) .
- Gallium nitride also has the capacity to produce other colors at high efficiency, including green light
- Figure 3 also illustrates a set of shorting contacts 51 and 52 as well as respective ohmic contacts 53 and 54 to the second gallium nitride layer, and to the silicon carbide substrate 46.
- Figure 4 illustrates a third LED embodiment according to the invention, and in which the buffer is conductively doped to thereby eliminate the use of the shorting contacts. More specifically, Figure 4 shows a diode 60 with a silicon carbide substrate 61, the buffer structure illustrated by the brackets at 62, the first gallium nitride layer 63, the gallium nitride alloy layer 64, and the second layer of gallium nitride 65. The ohmic contacts are respectively illustrated at 66 to the gallium nitride layer 65, and at 67 to the silicon carbide substrate 61. As in the embodiment of Figure 3, the alloy layer 64 has the opposite conductivity from the second gallium nitride layer 65, and forms a p-n junction therewith. Alloy layer 64, however, has the same conductivity as the first GaN layer 63 and the SiC substrate 61. Because the device of Figure 4 has a conductive buffer structure, the shorting contacts illustrated in Figures 2 and 3 are not required.
- single crystal gallium nitride layers with thicknesses up to 6 microns were grown on 6H silicon carbide substrates.
- a half width of the x-ray rocking curve (0-20 scan) was 54 arc seconds.
- Stimulated emission from photopumped gallium nitride layers grown on SiC was observed for the first time.
- the wavelength of the stimulated emission was 376 nm at 300K.
- Unintentionally doped layers were typically doped to a concentration of about 10 16 cm -3 (N d -N a ) .
- the net donor concentration was controlled from lxlO 17 to 4xl0 18 cm "3 and for p-layers, the concentration N a -N d was controlled from lxlO 17 to
- the silicon carbide substrates can be grown in the manner exemplified in U.S. Patent No. 4,866,005 to Carter, et al . , and the gallium nitride, gallium nitride alloy, and buffer layers were all grown using otherwise conventional chemical vapor deposition (CVD) techniques. Although various parameters for gas flow, pressure, and temperature in CVD epitaxial growth can differ from system to system, the layers described herein can be grown in the manner described using other systems and without undue experimentation by those of ordinary skill in this art.
- Figure 5 is a SIMS profile further demonstrating the structural features of the invention.
- the scan illustrates the presence of silicon and carbon (i.e., SiC) followed by aluminum and nitrogen (AlN) nitride, then gallium and aluminum and nitrogen (GaN and AlN) , and finally gallium and nitrogen (GaN) as the top layer.
- silicon and carbon i.e., SiC
- AlN aluminum and nitrogen
- GaN and AlN gallium and aluminum and nitrogen
- GaN gallium and nitrogen
- Figure 6 is a plot of doping versus depth and shows the extremely low native donor concentration (1E16) of epitaxial layers of gallium nitride grown on silicon carbide using the present invention.
- Figures 7, 8 and 9 are optical micrographs taken at magnifications of between 200 and 400X illustrating the undesirable results when an attempt is made to grow gallium nitride directly on silicon carbide.
- Figure 10 illustrates a gallium nitride surface and shows slightly improved results when a less than optimum buffer is used.
- Figures 11 and 12, also taken at 400X, show the advantages of the invention, specifically the relatively smooth and defect-free texture of the GaN crystal surface, particularly in comparison to Figures 7-10.
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960703125A KR100253026B1 (en) | 1993-12-13 | 1994-11-01 | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
JP7516809A JP2741705B2 (en) | 1993-12-13 | 1994-11-01 | Buffer structure between silicon carbide and gallium nitride and semiconductor device using the same |
EP95904227A EP0734593B1 (en) | 1993-12-13 | 1994-11-01 | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
CA002177465A CA2177465C (en) | 1993-12-13 | 1994-11-01 | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
DE69416427T DE69416427T2 (en) | 1993-12-13 | 1994-11-01 | BUFFER STRUCTURE BETWEEN SILICON CARBIDE AND GALLIUM NITRIDE AND RESULTING SEMICONDUCTOR ARRANGEMENTS |
AU13002/95A AU1300295A (en) | 1993-12-13 | 1994-11-01 | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US166,229 | 1993-12-13 | ||
US08/166,229 US5393993A (en) | 1993-12-13 | 1993-12-13 | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1995017019A1 true WO1995017019A1 (en) | 1995-06-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1994/013940 WO1995017019A1 (en) | 1993-12-13 | 1994-11-01 | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
Country Status (11)
Country | Link |
---|---|
US (1) | US5393993A (en) |
EP (1) | EP0734593B1 (en) |
JP (1) | JP2741705B2 (en) |
KR (1) | KR100253026B1 (en) |
CN (1) | CN1059755C (en) |
AT (1) | ATE176553T1 (en) |
AU (1) | AU1300295A (en) |
CA (1) | CA2177465C (en) |
DE (1) | DE69416427T2 (en) |
TW (1) | TW273051B (en) |
WO (1) | WO1995017019A1 (en) |
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JP2009231462A (en) * | 2008-03-21 | 2009-10-08 | Sanken Electric Co Ltd | Semiconductor light-emitting apparatus |
Also Published As
Publication number | Publication date |
---|---|
US5393993A (en) | 1995-02-28 |
TW273051B (en) | 1996-03-21 |
CN1059755C (en) | 2000-12-20 |
DE69416427T2 (en) | 1999-10-21 |
EP0734593A1 (en) | 1996-10-02 |
CN1137331A (en) | 1996-12-04 |
EP0734593B1 (en) | 1999-02-03 |
ATE176553T1 (en) | 1999-02-15 |
JP2741705B2 (en) | 1998-04-22 |
CA2177465C (en) | 2000-10-10 |
CA2177465A1 (en) | 1995-06-22 |
KR100253026B1 (en) | 2000-04-15 |
JPH09508751A (en) | 1997-09-02 |
KR960706696A (en) | 1996-12-09 |
AU1300295A (en) | 1995-07-03 |
DE69416427D1 (en) | 1999-03-18 |
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