The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula Inx(Ga1yAly)1xP on a GaAs substrate 12 to form an epi-wafer having an n-type cladding layer 14 (0.45<x<0.50, 0y1), an active layer 15, a p-type cladding layer 16 and a...http://www.google.co.uk/patents/US6465809?utm_source=gb-gplus-sharePatent US6465809 - Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof
