A resonant tunneling diode (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication method uses angled deposition to create overhangs at the...http://www.google.co.uk/patents/US5529952?utm_source=gb-gplus-sharePatent US5529952 - Method of fabricating lateral resonant tunneling structure
