A p-GaN layer 5 comprising materials such as a Group III nitride compound semiconductor is formed on a sapphire substrate 1 through MOVPE treatment, and a first metal layer 6 made of Co/Au is formed thereon. Then in a planar electron beam irradiation apparatus using plasma, electron beams are irradiated...http://www.google.co.uk/patents/US7029939?utm_source=gb-gplus-sharePatent US7029939 - P-type semiconductor manufacturing method and semiconductor device
