Techniques of reducing erroneous readings of the apparent charge levels stored in a number of rows of memory cells on account of capacitive coupling between the cells. All pages of a first row are programmed with a first pass, followed by programming all pages of a second adjacent row with a first pass,...http://www.google.co.uk/patents/US7046548?utm_source=gb-gplus-sharePatent US7046548 - Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
