The present invention is directed to a system for, and method of, determining a non-contact, near-surface generation and recombination lifetimes and near surface doping of a semiconductor material. The system includes: (1) a radiation pulse source that biases a dielectric on top of the semiconductor...http://www.google.co.uk/patents/US6011404?utm_source=gb-gplus-sharePatent US6011404 - System and method for determining near--surface lifetimes and the tunneling field of a dielectric in a semiconductor
