A reduced feature size MOS transistor and its method of manufacture is disclosed. The present invention reduces short channel effects but does not include an LDD structure In an illustrative embodiment, a MOS transistor has a gate length of 1.25 μm or less. The exemplary MOS transistor includes a gate...http://www.google.co.uk/patents/US7151059?utm_source=gb-gplus-sharePatent US7151059 - MOS transistor and method of manufacture
