A light-emitting semiconductor device consecutively includes a sapphire substrate, an AlN buffer layer, a silicon (Si) doped n.sup.+ -layer GaN, a Si-doped n-type GaN, a zinc (Zn) and Si-doped In.sub.0.20 Ga.sub.0.80 N emission layer, a magnesium (Mg) doped p-type Al.sub.0.08 Ga.sub.0.92 N layer as a...http://www.google.co.uk/patents/US5959401?utm_source=gb-gplus-sharePatent US5959401 - Light-emitting semiconductor device using group III nitride compound
