A semiconductor memory device using a junction short type programmable element comprises an epitaxial layer formed on a semiconductor substrate, the epitaxial layer having an opposite conductive type to that of the semiconductor substrate, the epitaxial layer being a collector region; a base region having...http://www.google.co.uk/patents/US4835590?utm_source=gb-gplus-sharePatent US4835590 - Semiconductor memory device using junction short type programmable element
