In a step of doping a silicon-based semiconductor film as a TFT active layer such as channel doping or the like, a protective film is formed by a CVD method as a pretreatment so as to prevent the silicon-based semiconductor film from being contaminated and etched. However, in the case of using the protective...http://www.google.co.uk/patents/US7151017?utm_source=gb-gplus-sharePatent US7151017 - Method of manufacturing semiconductor device