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Publication numberWO2016045271 A1
Publication typeApplication
Application numberPCT/CN2015/070887
Publication date31 Mar 2016
Filing date16 Jan 2015
Priority date25 Sep 2014
Also published asCN104299973A
Publication numberPCT/2015/70887, PCT/CN/15/070887, PCT/CN/15/70887, PCT/CN/2015/070887, PCT/CN/2015/70887, PCT/CN15/070887, PCT/CN15/70887, PCT/CN15070887, PCT/CN1570887, PCT/CN2015/070887, PCT/CN2015/70887, PCT/CN2015070887, PCT/CN201570887, WO 2016/045271 A1, WO 2016045271 A1, WO 2016045271A1, WO-A1-2016045271, WO2016/045271A1, WO2016045271 A1, WO2016045271A1
Inventors舒适, 谷敬霞
Applicant京东方科技集团股份有限公司
Export CitationBiBTeX, EndNote, RefMan
External Links: Patentscope, Espacenet
Display substrate and preparation method therefor, and display device
WO 2016045271 A1
Abstract
Provided are a display substrate and a preparation method therefor, and a display device. Since a quantum dot light-emitting device where a quantum dot light-emitting layer is located is made of the same quantum dot material, and the quantum dot light-emitting layer is integratedly arranged on the same layer, there is no need to conduct patterning on the quantum dot light-emitting layer, thereby avoiding the problem of colour offset in the prior art caused by adopting different quantum dot materials.
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Claims(13)  translated from Chinese
  1. 一种显示基板,包括衬底基板和形成于所述衬底基板上的多个像素单元,每个像素单元包括多个子像素单元;其中, A display substrate comprising a base substrate and a plurality of pixel cells are formed on a substrate in the substrate, each pixel unit includes a plurality of sub-pixel units; wherein,
    每个所述子像素单元包括远离衬底基板一侧的量子点发光器件; Each of the sub-pixel unit comprises a substrate away from the substrate side of the quantum dot light emitting device;
    所述量子点发光器件包括量子点发光层,所述多个子像素单元对应的量子点发光层同层一体设置;以及 The quantum dot light emitting device including quantum dot light emitting layer, a plurality of sub-pixel units corresponding to the quantum dot light emitting layer disposed integrally with the layer; and
    色光波长大于量子点发光层的色光波长的所述子像素单元为第一类子像素单元,所述第一类子像素单元包括与量子点发光器件对应的靠近衬底基板一侧的光转化结构,所述光转化结构用于将量子点发光器件发出的色光转化为所述第一类子像素单元对应的色光。 The sub-pixel unit color light color light wavelength longer than the wavelength of the quantum dot light emitting layer of a first type sub-pixel unit, the first type of sub-pixel units comprises a quantum dot light emitting device corresponding to the light close to the substrate on the substrate side conversion structure, the light into shade structure for the quantum dot light emitting device emitted into the first type of sub-pixel units corresponding shade.
  2. 根据权利要求1所述的显示基板,其中,所述子像素单元还可以为色光波长等于量子点发光层的色光波长的第二类子像素单元。 The display substrate of claim 1, wherein said sub-pixel units can also shade color light wavelength equal to the wavelength of the quantum dot light emitting layer, a second type sub-pixel units.
  3. 根据权利要求2所述的显示基板,其中,所述第一类子像素单元和所述第二类子像素单元包括设置为与所述量子点发光器件对应的靠近衬底基板一侧的透明平坦化层。 The display substrate of claim 2, wherein said first type of sub-pixel unit and the pixel unit includes a second type of sub-set of the quantum dot light emitting device close to the corresponding side of the transparent substrate is a flat substrate, layer.
  4. 根据权利要求1所述的显示基板,其中,所述光转化结构包括对应所述第一类子像素单元的色光转换层、色光滤光层,用于将量子点发光器件发出的色光经过所述色光转换层、所述色光滤光层后转化成与所述第一类子像素单元对应的色光。 The display substrate of claim 1, wherein said light conversion structure comprising a first category corresponding to the color-light conversion layer, a sub-pixel unit color light filter layer for the quantum dot light emitting color light emitted from the device through the color-light conversion layer was converted into the colored light filter layer with the first type of sub-pixel units corresponding shade.
  5. 根据权利要求1所述的显示基板,其中,所述每个子像素单元包括像素界定区域和透光区域,该透光区域位于所述像素界定区域和相邻的所述子像素单元的所述像素界定区域之间; The pixel display substrate according to claim 1, wherein each of said sub-pixel unit includes a pixel defining region and the light-transmissive region, the light-transmissive region of the pixel defining region and located adjacent to the sub-pixel unit defining between regions;
    所述每个子像素单元在其像素界定区域靠近衬底基板的一侧包括薄膜晶体管,所述薄膜晶体管用于控制该子像素单元的量子点发光器件发光。 Each side of the sub-pixel unit near the base substrate in which the pixel defining region comprises a thin film transistor, the thin film transistor for a quantum dot light emitting device of the light-emitting sub-pixel control unit.
  6. 根据权利要求5所述的显示基板,其中,所述量子点发光器件为蓝色量子点发光器件;所述蓝色量子点发光器件包括阴极、电子注入层、蓝色量子点发光层、空穴注入层、阳极;所述阳极与所述薄膜晶体管的漏极电连接。 The display substrate of claim 5, wherein the quantum dot light emitting device is a blue quantum dot light emitting device; the blue quantum dot light emitting device comprising a cathode, an electron injection layer, a blue light emitting quantum dot layer, a hole injection layer and an anode; the anode is connected to the drain electrodes of the thin film transistor.
  7. 根据权利要求2所述的显示基板,其中,所述第二类子像素单元为蓝色子像素单元、所述第一类子像素单元包括绿色子像素单元和红色子像素单元。 The display substrate of claim 2, wherein said second type of sub-pixel is a blue sub-pixel unit cell, the first type of sub-pixel includes green sub-pixel unit cell and a red sub-pixel units.
  8. 根据权利要求7所述的显示基板,其中,所述蓝色子像素单元包括与量子点发光器件对应的靠近衬底基板一侧的透明平坦化层;所述绿色子像素单元的光转化结构包括绿色转换层、绿色滤光层;所述红色子像素单元的光转化结构包括红色转换层、红色滤光层。 The display substrate of claim 7, wherein said means comprises a blue subpixel with a corresponding quantum dot light emitting device near a transparent planarization layer on the substrate side of the substrate; the green subpixel unit light conversion structure comprising green conversion layer, a green filter layer; light into the structure of the red sub-pixel unit includes a red conversion layer, a red filter layer.
  9. 根据权利要求6所述的显示基板,其中,所述蓝色量子点发光层的厚度为10-100nm;所述蓝色量子点发光层采用的蓝色量子点材料的粒径为1-10nm;所述蓝色量子点材料包括CdS或CdSn。 The display substrate of claim 6, wherein the thickness of the quantum dot light emitting layer, the blue of 10-100 nm; particle size of the quantum dot light emitting layer using the blue blue quantum dot material is 1-10 nm; the blue material comprises CdS quantum dots or CdSn.
  10. 根据权利要求8所述的显示基板,其中,所述红色转换层的材料包括Sr x Ca 1-x S:Eu,其中,0≤x≤1;所述绿色转换层的材料包括SrGa 2 S 4或YAG:Ce。 The display substrate of claim 8, wherein said material comprises a red conversion layer Sr x Ca 1-x S: Eu, wherein 0≤x≤1; green conversion layer of said material comprises SrGa 2 S 4 or YAG: Ce.
  11. 根据权利要求8所述的显示基板,其中,所述红色转换层和所述绿色转换层的厚度为1-10um。 The display substrate according to claim 8, wherein the conversion layer and the thickness of the green to red conversion layer 1-10um.
  12. 一种显示基板的制作方法,包括以下步骤: A method of making a substrate for a display, comprising the steps of:
    在形成有薄膜晶体管阵列的衬底基板上形成与第一类子像素单元对应的光转化结构; Formation and first class sub-pixel units corresponding optical conversion structure is formed on a base substrate with a thin film transistor array;
    在形成该光转化结构的衬底基板上形成量子点发光器件,所述量子点发光器件包括对应多个子像素单元的同层一体形成的量子点发光层; Forming a quantum dot light emitting device is formed on a base substrate of the light conversion structure, the quantum dot light emitting device comprises a plurality of sub-pixels corresponding to the unit light-emitting layer with the quantum dot layer formed integrally;
    其中,所述第一类子像素单元为色光波长大于量子点发光层的色光波长的子像素单元; Wherein said first type of sub-pixel unit color light is larger than the wavelength of the quantum dot light emitting layer color light wavelength sub-pixel unit;
    所述光转化结构用于将所述量子点发光器件的色光转化为所述第一类子像素单元对应的色光。 The light into shade structure for the quantum dot light emitting device into the first type of sub-pixel units corresponding shade.
  13. 一种显示装置,包括如权利要求1-11任一项所述的显示基板。 A display device as claimed comprises a display substrate according to any one of Claims 1-11.
Description  translated from Chinese
显示基板及其制备方法、显示装置 The display substrate and its preparation method, a display device 技术领域 TECHNICAL FIELD

本发明涉及显示技术领域,具体地,涉及一种显示基板及其制备方法、显示装置。 The present invention relates to the field of display technology, in particular, it relates to a method for preparing a substrate and a display, the display apparatus.

背景技术 Background technique

量子点半导体显示是极具潜力的未来显示技术。 The semiconductor quantum dot display is great potential for the future of display technology. 通过控制量子点半导体材料的粒径,可以调节禁带宽度,从而达到控制发光颜色的目的。 By controlling the particle size of the quantum dot semiconductor material, the band gap can be adjusted, so as to control the emission color of the object. 量子点具有主动发光、响应速度快、色纯度极高等特点,使得其预计的显示效果远超液晶显示方式。 Quantum dots with active light, fast response, high color purity and other characteristics, making it far more than expected LCD display mode. 目前限制量子点彩色显示发展的主要原因有两个:一是量子点难以图案化,二是量子点会产生色偏移。 Current restrictions on the development of quantum dot color display for two main reasons: First, the quantum dot patterned hard, the second is a quantum dot cause color shift.

由于量子点不是小分子有机材料,因此目前没有适合量产的图案化手段。 Since the quantum dots instead of small molecule organic materials, so there is no suitable patterning means mass production. 由于量子点发光层很薄,常用的黄光工艺会使用光刻胶、显影液、剥离液,这会严重破坏量子点发光层。 Because of the quantum dot light emitting layer is thin, yellow common process uses a photoresist, developer, stripper, it would seriously undermine the quantum dot light emitting layer.

同时,也无法通过蒸镀方式和喷墨方式进行图案化;目前行业普遍接受的方法是转印法,但该方法很不成熟,工艺难度极大,目前均未量产,另外转印设备的供应商也很少,因此制约量子点半导体显示的发展。 At the same time, can not be carried out by way of deposition and patterning of the inkjet method; current industry generally accepted method is to transfer method, but the method is very immature, technology is extremely difficult, there were mass production, in addition to the transfer device suppliers rarely, therefore restricting the development of semiconductor quantum dot display.

显示基板包括衬底基板和形成于所述衬底基板上的多个像素单元,每个像素单元包括用于彩色显示的不同颜色的多个子像素单元。 The display substrate includes a base substrate and a plurality of pixel cells formed on said substrate on a substrate, each pixel unit includes a plurality of sub-pixels of different colors in the color display unit. 在选用不同量子点材料进行彩色显示时(例如,一个像素单元包括RGB三子像素单元),由于不同发光材料的效率衰减不同步,随着使用的时间延长会导致画面颜色偏移。 In the selection of different quantum dot materials color display (for example, a pixel unit comprises three RGB sub-pixel units), due to the efficiency of different luminescent material decay is not synchronized with the time prolonged use can cause the screen color shift.

发明内容 SUMMARY

本发明的目的是解决现有技术存在的量子点半导体显示中量子点难以图案化和不同量子点发光材料由于效率衰减不同导致的画面颜色偏移的问题,提供了一种显示基板及其制备方法、显示 装置。 Object of the present invention is to solve the prior art semiconductor quantum dots in quantum dot display is difficult and different patterned quantum dot light emitting material due to the efficiency of the screen color shift attenuation caused by different problems, there is provided a method for preparing a substrate and display display means.

解决本发明技术问题所采用的技术方案是一种显示基板,包括衬底基板和形成于所述衬底基板上的多个像素单元,每个像素单元包括多个子像素单元; Technical solutions solving the Problems The present invention provides a display substrate comprising a base substrate and a plurality of pixel cells formed on said substrate on a substrate, each pixel unit includes a plurality of sub-pixel units;

所述每个子像素单元包括远离衬底基板一侧的量子点发光器件; Said each sub-pixel unit comprises a substrate away from the substrate side of the quantum dot light emitting device;

所述量子点发光器件包括量子点发光层,所述多个子像素单元对应的量子点发光层同层一体设置; The quantum dot light emitting device including quantum dot light emitting layer, a plurality of sub-pixel units corresponding to the quantum dot light emitting layer disposed integrally with the layer;

色光波长大于量子点发光层的色光波长的所述子像素单元为第一类子像素单元;以及 The sub-pixel unit color light color light wavelength greater than the wavelength of the quantum dot light emitting layer is a first class sub-pixel unit; and

所述第一类子像素单元包括与量子点发光器件对应的靠近衬底基板一侧的光转化结构,所述光转化结构用于将量子点发光器件发出的色光转化为所述第一类子像素单元对应的色光。 The first category includes a sub-pixel unit corresponding to the quantum dot light emitting device of the light conversion structure near the substrate side of the substrate, the light conversion structure for the quantum dot light emitting color light emitted from the device into the first sub-category pixel unit corresponding shade.

优选的是,所述子像素单元还可以为色光波长等于量子点发光层的色光波长的第二类子像素单元。 Preferably, the sub-pixel unit color-light wavelength can also equal to the second type sub-pixel units quantum dot light emitting layer color light wavelength.

优选的是,所述第一类子像素单元和所述第二类子像素单元包括设置为与所述量子点发光器件对应的靠近衬底基板一侧的透明平坦化层。 Preferably, the first type of sub-pixel unit and the pixel unit includes a second type of sub-set of the quantum dot light emitting device close to the corresponding side of the transparent substrate, the substrate planarization layer.

优选的是,所述光转化结构包括对应所述第一类子像素单元的色光转换层、色光滤光层,用于将量子点发光器件发出的色光经过所述色光转换层、所述色光滤光层后转化成与所述第一类子像素单元对应的色光。 Preferably, the light conversion structure comprising a first category corresponding to the color-light conversion layer and a sub-pixel unit color light filter layer for the quantum dot light emitting color light emitted via the colored light conversion layer, the colored light filter after transforming into a light layer with the first type of sub-pixel units corresponding shade.

优选的是,所述每个子像素单元包括像素界定区域和透光区域,该透光区域位于所述像素界定区域和相邻所述子像素单元的所述像素界定区域之间; Preferably, each of the sub-pixel unit includes a pixel defining region and the light-transmissive region, the transparent region is located adjacent to the pixel defining region and the sub-pixel unit of the pixel area defined between;

所述每个子像素单元在其像素界定区域靠近衬底基板的一侧包括薄膜晶体管,所述薄膜晶体管用于控制该子像素单元的量子点发光器件发光。 Each side of the sub-pixel unit near the base substrate in which the pixel defining region comprises a thin film transistor, the thin film transistor for a quantum dot light emitting device of the light-emitting sub-pixel control unit.

优选的是,所述量子点发光器件为蓝色量子点发光器件;所述蓝色量子点发光器件包括阴极、电子注入层、蓝色量子点发光 层、空穴注入层、阳极;所述的阳极与所述薄膜晶体管的漏极电连接。 Preferably, the quantum dot is a blue light-emitting device of the quantum dot light emitting device; the blue quantum dot light emitting device comprising a cathode, an electron injection layer, a blue light emitting quantum dot layer, a hole injection layer, an anode; wherein drain of the anode and the thin film transistor.

优选的是,所述第二类子像素单元为蓝色子像素单元、第一类子像素单元包括绿色子像素单元和红色子像素单元。 Preferably, the second type of sub-pixel is a blue sub-pixel unit cell, the first type sub-pixel includes green sub-pixel unit cell and a red sub-pixel units.

优选的是,所述蓝色子像素单元包括与量子点发光器件对应的靠近衬底基板一侧的透明平坦化层;所述绿色子像素单元的光转化结构包括绿色转换层、绿色滤光层;所述红色子像素单元的光转化结构包括红色转换层、红色滤光层。 Preferably, the unit includes a blue subpixel with a corresponding quantum dot light emitting device near a transparent planarization layer on the substrate side of the substrate; the green subpixel unit conversion structure comprising a green light conversion layer, green filter layer ; light conversion structure of the red sub-pixel unit includes a red conversion layer, a red filter layer.

优选的是,所述蓝色量子点发光层的厚度为10-100nm;所述蓝色量子点发光层采用的蓝色量子点材料的粒径为1-10nm;所述蓝色量子点材料包括CdS或CdSn。 Preferably, the thickness of the blue light-emitting quantum dot layer is 10-100nm; particle size of the quantum dot light emitting layer using the blue blue quantum dot material is 1-10nm; the blue quantum dot material comprises CdS or CdSn.

优选的是,所述红色转换层的材料包括Sr x Ca 1-x S:Eu,其中,0≤x≤1;所述绿色转换层的材料包括SrGa 2 S 4或YAG:Ce。 Preferably, the material of the red conversion layer comprises Sr x Ca 1-x S: Eu, wherein, 0≤x≤1; the green conversion layer comprises a material SrGa 2 S 4 or YAG: Ce.

优选的是,所述红色转换层和所述绿色转换层的厚度为1-10um。 Preferably, the thickness of the green conversion layer and the red conversion layer to 1-10um.

本发明的另一个目的是提供一种显示基板的制作方法,包括以下步骤: Another object of the present invention is to provide a method of manufacturing a display substrate, comprising the steps of:

在形成有薄膜晶体管阵列的衬底基板上形成与第一类子像素单元对应的光转化结构; Formation and first class sub-pixel units corresponding optical conversion structure is formed on a base substrate with a thin film transistor array;

在形成该光转化结构的衬底基板上形成量子点发光器件,所述量子点发光器件包括对应多个子像素单元的同层一体形成的量子点发光层; Forming a quantum dot light emitting device is formed on a base substrate of the light conversion structure, the quantum dot light emitting device comprises a plurality of sub-pixels corresponding to the unit light-emitting layer with the quantum dot layer formed integrally;

其中,所述第一类子像素单元为色光波长大于量子点发光层的色光波长的子像素单元;所述光转化结构用于将所述量子点发光器件的色光转化为所述第一类子像素单元对应的色光。 Wherein said first type of sub-pixel unit is greater than a sub-pixel unit color light wavelength quantum dot light emitting layer color light wavelength; said light conversion structure for the quantum dot light emitting color light converted to the first class sub-pixel units corresponding to the shade.

本发明的另一个目的是提供一种显示装置,该显示装置包括上述的显示基板。 Another object of the present invention is to provide a display device, the display device includes the above-mentioned display substrate.

本发明的显示基板及其制备方法、显示装置,由于量子点发光层所在的发光器件采用同一种量子点材料,量子点发光层采用同层一体设置,不需要对该量子点发光层进行图案化处理;避免 The display substrate and preparation method of the present invention, a display device, due to the quantum dot light emitting layer where the light emitting device using the same quantum dots, quantum dot light emitting layer is made of one layer of the same set, without the quantum dot light emitting layer is patterned processing; avoid

了现有技术中采用不同的量子点材料导致的颜色偏移的问题。 The prior art using different color shift problem caused by the quantum dot material.

附图说明 BRIEF DESCRIPTION

图1为本发明实施例1中量子点显示基板的结构示意图, Figure 1 of the present invention embodiments Example 1, a quantum dot structure diagram display substrate,

附图标记说明: Explanation of Symbols:

1.衬底基板;2.栅极;3.第一绝缘层;4.有源层;5.第二绝缘层;6.源极;7.漏极;8.第一平坦化层;9.红色滤光层;10.红色转换层;11.绿色滤光层;12.绿色转换层;13.对应蓝色子像素单元的透明平坦化层;14.对应红色、绿色子像素单元的透明平坦化层;15.阳极;16.像素界定层;17.空穴注入层;18.蓝色量子点发光层;19.电子注入层;20.阴极;21.第二平坦化层;22.盖板;23.像素界定区域;24.透光区域;25.子像素单元。 2. The gate;; base substrate 1. 3 a first insulating layer;. The active layer 4; 5 of the second insulating layer; 6 source;. 7 a drain;. The first planarizing layer 8; 9 . red filter layer; 10 red conversion layer; 11 green filter layer; 12 green conversion layer; a transparent planarization layer 13 corresponding to the blue sub-pixel unit; 14 corresponding to red, green sub-pixel units transparent planarization layer; 15 anode; 16 pixel define layer; 17 hole injection layer; 18 blue quantum dot light emitting layer;.. 19 electron injection layer; 20 cathode; 21 second planarization layer; 22. cover; 23 pixel define area; 24-transmissive areas; 25 sub-pixel units.

具体实施方式 detailed description

为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明作进一步详细描述。 To enable those skilled in the art to better understand the technical aspect of the present invention, the accompanying drawings and the following specific embodiments of the present invention will be described in further detail.

实施例1: Example 1:

本实施例提供一种显示基板,包括衬底基板和形成于所述衬底基板上的多个像素单元,每个像素单元包括多个子像素单元。 The present embodiment provides a display substrate comprising a base substrate and a plurality of pixel cells formed on said substrate on a substrate, each pixel unit includes a plurality of sub-pixel units.

每个子像素单元均包括远离衬底基板一侧的量子点发光器件。 Each sub-pixel unit comprises a substrate away from the substrate side of the quantum dot light emitting devices.

所述量子点发光器件包括量子点发光层,多个子像素单元对应的量子点发光层同层一体设置; The quantum dot light emitting device includes a quantum dot light emitting layer, a plurality of sub-pixel units corresponding to the quantum dot light emitting layer with one layer disposed;

色光波长大于量子点发光层的色光波长的子像素单元被称为第一类子像素单元。 Sub-pixel unit color light wavelengths greater than the quantum dot light emitting layer of colored light wavelengths is called a first class sub-pixel units. 并且,色光波长等于量子点发光层的色光波长的子像素单元被称为第二类子像素单元。 Further, the sub-pixel unit color light wavelength equal to the quantum dot light emitting layer of colored light wavelengths is called a second type sub-pixel units.

第一类子像素单元包括与量子点发光器件对应的靠近衬底基板一侧的光转化结构,所述光转化结构用于将量子点发光器件发出的色光转化为所述第一类子像素单元对应的色光。 The first sub-pixel unit includes a quantum dot light emitting device close to the light conversion structure corresponding to the base substrate side, the light conversion structure for the color light emitted from the quantum dot light emitting device of the first type into sub-pixel units corresponding shade.

本实施例的显示基板中,由于量子点发光器件采用同一种量子点材料,且量子点发光器件的量子点发光层在像素区域采用同层一体设置,因此不需要将该量子点发光层图案化,并且也避免了现有技术中采用不同的量子点材料导致的颜色偏移的问题。 The display substrate of the present embodiment, since the quantum dot light emitting device using the same quantum dots and quantum dots and quantum dot light emitting device emitting layer in the pixel region using the same layer integrally provided, it is not necessary the quantum dot light emitting layer is patterned and also to avoid the prior art using different color quantum dot material shift caused problems.

应当理解的是,本实施例以底发光模式介绍,其它类型的发光模式也是适用的;本实施例是以红绿蓝三原色的子像素单元和蓝色量子点发光层为例介绍的,其它原色的子像素单元和其它颜色的量子点发光层也是适用的;其中,蓝色子像素单元的色光波长等于蓝色量子点发光层的色光波长,为第二类子像素单元;红色、绿色子像素单元的色光波长大于蓝色量子点发光层的色光波长,为第一类子像素单元。 It should be understood that the present embodiments are described bottom-emitting mode, other types of lighting mode are also suitable; this embodiment is red, green and blue sub-pixel units of quantum dot light emitting layer and blue Case presentation, other colors the sub-pixel units and other color quantum dot light emitting layer is applied; wherein the wavelength of colored light blue sub-pixel unit is equal to the wavelength of a blue shade quantum dot light emitting layer, a second type sub-pixel units; red, green, shade wavelength blue sub-pixel unit is greater than the quantum dot light emitting layer of colored light wavelength, a first class sub-pixel units.

具体地,图1所示的显示基板包括衬底基板1和形成于所述衬底基板1上的像素区域的多个像素单元,每个像素单元包括红色、绿色、蓝色三个子像素单元;具体地,如图1所示,其中,红色、绿色子像素单元为第一类子像素单元,绿色子像素单元位于图1中左侧部分(图1中没有示出绿色子像素单元的如下所述的像素界定部分),红色子像素单元位于图1的中间部分。 Specifically, the display substrate shown in Figure 1 comprises a base substrate 1 and a plurality of pixel cells formed on said substrate, a pixel region of the substrate, each pixel unit including red, green, blue, three sub-pixel unit; specifically, as shown in Figure 1, wherein the red, green sub-pixel units of the first type sub-pixel unit, a green sub-pixel units on the left portion of FIG. 1 (not shown in Figure 1 the green sub-pixel unit as follows portion of the pixel define above), the red sub-pixel units located in the middle part of Figure 1. 蓝色子像素单元为第二类子像素单元,位于图1的右侧部分。 The blue subpixel unit of the second type sub-pixel unit, on the right part of Figure 1.

每个子像素单元25包括像素界定区域23和透光区域24,该透光区域24位于该子像素单元25的像素界定区域23和相邻子像素单元的像素界定区域之间;各子像素单元25包括远离衬底基板1一侧的蓝色量子点发光器件,蓝色量子点发光器件发出的光的波长等于蓝色子像素单元的色光的波长,所述蓝色量子点发光器件包括蓝色量子点发光层,红色、绿色、蓝色子像素单元对应的蓝色量子点发光层同层一体设置。 Each sub-pixel includes a pixel unit 25 and the light-transmissive region 23 defining region 24, the light-transmissive region 24 located between the sub-pixel unit of the pixel define regions 23 and 25 of adjacent sub-pixel cells of the pixel define regions; 25 units of each subpixel the side remote from the base substrate 1 includes a blue light emitting quantum dot device, a quantum dot light emitting device comprising a blue blue blue wavelength light quantum quantum dot light emitting device of equal color light emitted blue subpixel unit of wavelength, the dot light emitting layer, the red, green and blue sub-pixel units corresponding to the blue light-emitting layer with a quantum dot layer integrally. 蓝色量子点发光器件发出的光可以通过上述的红、绿、蓝子像素单元进行彩色显示。 The blue light emitted by the quantum dot light emitting device described above can be red, green and blue sub-pixel color display unit.

各子像素单元25在所述像素界定区域23靠近衬底基板1的一侧包括薄膜晶体管,所述薄膜晶体管用于控制蓝色量子点发光器件发光。 Each sub-pixel unit 25 in the pixel defining region 23 near the side of the base substrate 1 includes a thin film transistor, the thin film transistor for controlling the quantum dot light emitting device emits light blue.

在红色、绿色子像素单元的透光区域24,在蓝色量子点发光 器件的靠近衬底基板1的一侧设有光转化结构,所述光转化结构能将量子点发光器件的色光转化为红色、绿色子像素单元对应的色光。 Red, light green sub-pixel unit area of 24, on the side near the base substrate 1 blue quantum dot light emitting device is provided with a light conversion structure, the structure can light into quantum dot light emitting device into shade red, green sub-pixel units corresponding shade.

具体地,光转化结构包括对应红色、绿色子像素单元的色光转换层、色光滤光层,从量子点发光器件发出的色光经过色光转换层、色光滤光层后变为与红色、绿色子像素单元对应的色光。 Specifically, the light conversion structure comprising a corresponding red, green, sub-pixel unit color light conversion layer, a filter layer colored light, color light emitted from the quantum dot light emitting device is subjected to color light conversion layer was changed to colored light filter layer with red, green subpixel unit corresponding shade.

具体地,如图1所示,蓝色量子点发光器件包括在对应蓝色子像素单元的透明平坦化层13上或对应红色、绿色子像素单元的透明平坦化层14上依次设置的阳极15、空穴注入层17、蓝色量子点发光层18、电子注入层19、阴极20。 Specifically, as shown in FIG. 1, a blue light-emitting device comprising a quantum dot blue sub-pixel unit corresponding to a transparent planarizing layer 13 or a corresponding red, transparent planarization layer 15 anode green sub-pixel units disposed in this order on 14 , the hole injection layer 17, a blue quantum dot light emitting layer 18, the electron injection layer 19, a cathode 20. 阳极15与对应的薄膜晶体管的漏极7电连接。 7 and a drain corresponding to the anode 15 of the thin film transistor. 其中,蓝色量子点发光层18是将含有蓝色量子点混合物涂覆于空穴注入层17上形成的。 Wherein, the blue light emitting quantum dot layer 18 is a mixture comprising a blue quantum dots coated onto the hole injection layer 17 is formed. 由于各子像素单元的蓝色量子点发光层18为同层一体设置,因此不需要对量子点发光层进行图案化处理。 Since the blue quantum dot light emitting layer of each sub-pixel unit 18 is provided integrally with the floor, so no quantum dot light emitting layer patterning process.

具体地,所述蓝色量子点发光层18的厚度为10-100nm,该厚度可以根据量子点发光层的光转换效率和工艺能力确定。 In particular, the thickness of the blue light-emitting quantum dot layer 18 is 10-100nm, the thickness may be determined according to optical conversion efficiency and technological capacity to quantum dot light emitting layer.

蓝色量子点发光层18采用的蓝色量子点材料的粒径为1-10nm。 Blue particle quantum dot light emitting layer 18 using a blue quantum dot material is 1-10nm. 所述蓝色量子点材料可以采用镉系量子点材料。 The blue quantum dots can be used quantum dots of cadmium-based material. 具体的,蓝色量子点材料可以为CdS或CdSn。 Specifically, the blue quantum dot material may be CdS or CdSn.

具体地,蓝色子像素单元包括与量子点发光器件对应的靠近衬底基板1一侧的透明平坦化层13。 In particular, the blue sub-pixel units comprises a quantum dot light emitting device of the transparent substrate corresponding to the substrate 1 near the planarization layer 13. 由于量子点发光器件的量子点发光层采用蓝色量子点材料,而蓝色子像素单元的色光波长与蓝色量子点材料发光的波长相等,因此只需将该平坦化层13制作成透明层以使蓝色量子点材料发出的光可以直接透射出即可。 Because of the quantum dot light emitting layer quantum dot light emitting device using quantum dots in blue, and the blue color light wavelength of the blue sub-pixel units quantum dot luminescence wavelength equal, so only the planarization layer 13 is made into a transparent layer so that the light emitted by the blue quantum dots can be transmitted out. 具体的,可以采用透明树脂制作该透明平坦化层13,例如,透明的环氧类树脂。 Specifically, use can be made of the transparent resin, a transparent planarization layer 13, e.g., a transparent epoxy resin.

如图1所示,绿色子像素单元的光转化结构包括绿色转换层12、绿色滤光层11。 As shown in Figure 1, the green sub-pixel unit conversion structure comprising a green light conversion layer 12, a green filter layer 11. 绿色转换层12相对于绿色滤光层11更靠近量子点发光器件,这样从量子点发光器件发出的蓝色光首先经过绿色转换层12而被转化为绿光,随后经过绿色滤光层11过滤掉 该绿光中的部分杂色光(例如,少量未转化的蓝光)。 Green conversion layer 12 with respect to the green filter layer 11 closer to the quantum dot light emitting devices, such blue emitted from the quantum dot light emitting device light first passes through the green conversion layer 12 is converted into green light then passes through a green filter layer filters out 11 the green part of the variegated light (for example, a small amount of unconverted blue light). 优选的,所述绿色转换层12的材料包括SrGa 2 S 4或YAG:Ce,应当理解的是,也可以选用现有技术中其它的绿色转换材料。 Preferably, the material of the green conversion layer 12 comprises SrGa 2 S 4 or YAG: Ce, it should be understood that the prior art can also use other green conversion material.

如图1所示,红色子像素单元的光转化结构包括红色转换层10、红色滤光层9。 As shown in Figure 1, the red light conversion structure comprises a red sub-pixel unit conversion layer 10, a red filter layer 9. 红色转换层10相对于红色滤光层9更靠近量子点发光器件,这样从量子点发光器件发出的蓝色光首先经过红色转换层10而被转化为红光,随后经过红色滤光层9过滤掉该红光中的部分杂色光(例如,少量未转化的蓝光)。 Red conversion layer 10 with respect to the red filter layer 9 closer to the quantum dot light emitting devices, such blue emitted from the quantum dot light emitting device light first passes through a red conversion layer 10 is converted to red light, and then through the red filter layer filters out 9 the part of the red variegated light (for example, a small amount of unconverted blue light). 优选的,所述红色转换层10的材料包括Sr x Ca 1-x S:Eu,其中,0≤x≤1,应当理解的是,也可以选用现有技术中其它的红色转换材料。 Preferably, the material of the red conversion layer 10 comprises Sr x Ca 1-x S: Eu, wherein, 0≤x≤1, it should be understood that the prior art can also use other red conversion material.

需要说明的是,在红色转换层10和绿色转换层12靠近量子点发光器件侧(即在红色滤光层9和绿色滤光层11的上方)设有对应红色、绿色子像素单元的透明平坦化层14,用于调节各个子像素中光转化结构的高度。 It notes that, in the quantum dot light emitting device and near the green conversion layer 12 side of the red conversion layer 10 (i.e., a green filter layer 9 and the top of the red filter 11) is provided corresponding to the red, green subpixel units transparent planarization layer 14 for adjusting the respective sub-pixels in the light conversion structure height.

优选的,上述的红色转换层10和绿色转换层12的厚度为1-10um。 Preferably, the thickness of the red conversion layer 10 and the green conversion layer 12 is 1-10um. 可根据具体的应用场景选择。 Can be selected according to the specific application scenario.

进一步优选的,所述红色转换层10和绿色转换层12的厚度为2-8um。 Further preferred, the thickness of the red conversion layer 10 and the green conversion layer 12 is 2-8um. 可根据具体的应用场景选择。 Can be selected according to the specific application scenario.

优选的,所述绿色滤光层11和红色滤光层9的厚度为1-5um。 Preferably the thickness of the green filter layer 11 and the red filter layer 9 is 1-5um.

薄膜晶体管的结构为现有技术范畴,典型地,如图1所示,薄膜晶体管包括在衬底基板1上依次设置的栅极2,第一绝缘层3,有源层4,第二绝缘层5,源极6,漏极7,第一平坦化层8。 Structure of the thin film transistor of the prior art is visible, typically, shown in Figure 1, a thin film transistor including a gate electrode on a base substrate 2 are arranged in order, a first insulating layer 3, active layer 4, second insulating layer 5, the source electrode 6, drain electrode 7, 8 of the first planarization layer. 应当理解的是,上述薄膜晶体管也可以采用现有技术中其它的结构。 It should be understood that the thin film transistor may also be used in other prior art structures.

实施例2 Example 2

本实施例提供一种上述显示基板的制作方法,包括以下步骤: The present embodiment provides a method of manufacturing the display substrate, comprising the steps of:

在形成有薄膜晶体管阵列的衬底基板上形成与第一类子像素单元对应的光转化结构; Formation and first class sub-pixel units corresponding optical conversion structure is formed on a base substrate with a thin film transistor array;

在形成该光转化结构的衬底基板上形成量子点发光器件,所述量子点发光器件包括对应多个子像素单元的同层一体形成的量 子点发光层; Forming a quantum dot light emitting device is formed on a base substrate of the light conversion structure, the quantum dot light emitting device comprises a plurality of sub-pixels corresponding to the same layer unit quantum dot light emitting layer integrally formed;

其中,所述第一类子像素单元为色光波长大于量子点发光层的色光波长的子像素单元;所述光转化结构用于将所述量子点发光器件的色光转化为所述第一类子像素单元对应的色光。 Wherein said first type of sub-pixel unit is greater than a sub-pixel unit color light wavelength quantum dot light emitting layer color light wavelength; said light conversion structure for the quantum dot light emitting color light converted to the first class sub-pixel units corresponding to the shade.

具体地,上述显示基板的制作方法,包括以下步骤: Specifically, the method of manufacturing the display substrate, comprising the steps of:

1.首先在衬底基板1上形成薄膜晶体管结构,如图1所示,通过构图工艺依次形成栅极2,第一绝缘层3,有源层4,第二绝缘层5,源极6,漏极7,第一平坦化层8,制作薄膜晶体管为现有技术范畴,在此不再一一赘述。 1. First, the substrate 1 is formed on a substrate a thin film transistor structure shown in Figure 1, the gate electrode is formed by sequentially patterning process 2, a first insulating layer 3, active layer 4, second insulating layer 5, a source electrode 6, drain 7, the first planarization layer 8 to produce thin-film transistor technology for existing category, will not enumerate.

2.在第一平坦化层8上通过构图工艺在红色子像素单元的对应位置形成红色滤光层9;在绿色子像素单元的对应位置形成绿色滤光层11;优选的,所述绿色滤光层11和红色滤光层9的厚度为1-5um。 2. On the first planarization layer 8 is formed by a red filter layer 9 patterning process at the corresponding position of the red sub-pixel unit; in the corresponding position of the green sub-pixel unit 11 is formed of a green filter layer; Preferably, the green filter optical layer 11 and the thickness of the red filter layer 9 is 1-5um. 应当理解的,上述绿色滤光层11和红色滤光层9的制作和材料的选取为现有技术范畴,在此不再一一赘述。 It should be understood, said green filter layer 11 and select the red filter layer of material production and 9 for existing technical areas, will not enumerate.

3.在红色滤光层9上通过构图工艺形成红色转换层10;在绿色滤光层11上形成绿色转换层12;优选的,上述的红色转换层10和绿色转换层12的厚度为1-10um;进一步优选的,所述红色转换层10和绿色转换层12的厚度为2-8um;优选的,所述绿色转换层12的材料包括SrGa 2 S 4或YAG:Ce;所述红色转换层10的材料包括Sr x Ca 1-x S:Eu,其中,0≤x≤1。 3. On the red filter layer 9 red conversion layer 10 is formed by patterning process; green conversion layer 12 is formed on a green filter layer 11; preferably has a thickness, said red conversion layer 10 and the green conversion layer 12 is 1- 10um; more preferably, the thickness of the red conversion layer 10 and the green conversion layer 12 is 2-8um; preferably, the material of the green conversion layer 12 comprises SrGa 2 S 4 or YAG: Ce; the red conversion layer material 10 comprises Sr x Ca 1-x S: Eu, wherein, 0≤x≤1.

应当理解的,上述绿色滤光层11和红色滤光层9的制作为现有技术范畴,在此不再一一赘述。 It should be understood, said green filter layer 11 and the production of the red filter layer 9 existing technical areas, will not enumerate. 绿色滤光层11和红色滤光层9的材料也可以采用现有技术中其它类型的材料。 Green filter 11 and the material of the red filter layer 9 can also be used in other types of prior art materials.

4.在第一平坦化层8上通过构图工艺在蓝色子像素单元的对应位置形成对应蓝色子像素单元的透明平坦化层13,例如,环氧类透明树脂; 4. On the first planarizing layer 8 by a patterning process at the position corresponding to the blue sub-pixel unit is formed corresponding to the blue subpixel unit of a transparent planarization layer 13, e.g., transparent epoxy resin;

在红色转换层10和绿色转换层12上通过构图工艺形成对应红色、绿色子像素单元的透明平坦化层14,其厚度用于调节各子像素单元中光转换结构的高度。 On the red conversion layer 10 and the green conversion layer 12 is formed by patterning process corresponding to the red, green subpixel unit of a transparent planarization layer 14, which for regulating the thickness of each sub-pixel units light conversion structure height.

5.通过构图工艺在透明平坦化层14和透明平坦化层13上 制备阳极15;所述阳极15与薄膜晶体管的漏极7相连,用以通过薄膜晶体管控制阳极15带电。 5. patterning process in a transparent planarization layer 14 and the transparent planarization layer 13 of an anode 15; a drain connected to the anode 15 and the thin film transistor 7 to the anode 15 through the thin film transistor controlling charging. 阳极15制作为现有技术范畴,在此不再一一赘述。 15 anode production for the art category, will not enumerate.

6.通过构图工艺形成像素界定层16,其中,像素界定层16的制作为现有技术范畴,在此不再一一赘述。 6. patterning process to form the pixel define layer 16, wherein the production of the pixel define layer 16 existing technical areas, will not enumerate.

7.在阳极15上依次整层制作空穴注入层17、蓝色量子点发光层18、电子注入层19、阴极20,需要说明的是,蓝色量子点发光层18可以采用旋涂的方法整层涂覆获得。 7. 15 sequentially on the anode hole injection layer, the whole layer 17, a blue quantum dot light emitting layer 18, the electron injection layer 19, a cathode 20, to be noted that, the blue light emitting quantum dot layer 18 of the spin coating method can be used whole layer coating obtained. 所述蓝色量子点发光层18的厚度为10-100nm;所述蓝色量子点发光层18采用的蓝色量子点材料的粒径为1-10nm;所述蓝色量子点材料为CdS或CdSn。 The thickness of the blue light-emitting quantum dot layer 18 is 10-100nm; particle size of the quantum dot light emitting layer 18 blue blue using quantum dot material is 1-10nm; the blue of CdS quantum dots or CdSn.

其它功能层可以采用蒸镀的方法制备,在此不再一一赘述。 Other functional layers can be prepared using a vapor deposition method, it will not enumerate.

可选地,可继续制作第二平坦化层21,并封装盖板22。 Alternatively, continue to produce the second planarization layer 21, and the package cover 22. 获得如图1所示的显示基板。 Obtaining the display substrate 1 as shown in FIG.

实施例3 Example 3

本实施例提供一种显示装置,该显示装置包括上述的显示基板。 The present embodiment provides a display device, the display device includes the above-mentioned display substrate.

本发明的显示基板和显示装置中,由于量子点发光器件采用同一种量子点材料制备,且量子点发光器件的量子点发光层采用同层一体设置,因此不需要对该量子点发光层进行图案化,并且也避免了现有技术中采用不同的量子点材料导致的颜色偏移的问题。 Display substrate and a display device of the present invention, since the preparation of the same kind of quantum dot light emitting device using quantum dot material and the quantum dot light emitting layer quantum dot light emitting device using the same layer integrally provided, there is no need for the quantum dot light emitting layer is patterned technology, and also to avoid the prior art using different color shift problem caused by the quantum dot material.

本发明所提供的显示装置可以用于电视、手机、导航仪等任何具有显示功能的产品或部件。 The display device of the present invention can be provided for TVs, mobile phones, navigation systems and other products or any component having a display function.

可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。 It is appreciated that the above embodiments are merely exemplary embodiments to illustrate the principles of the present invention and are used, however, the present invention is not limited thereto. 对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。 Those of ordinary skill in the art is concerned, without departing from the spirit and substance of the present invention may be made various modifications and improvements, such variations and modifications are also considered the scope of the present invention.

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Classifications
International ClassificationH01L21/77, H01L27/12
Cooperative ClassificationH01L21/77, H01L27/12
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