WO2014204748A8 - Optoelectronic integrated circuit - Google Patents

Optoelectronic integrated circuit Download PDF

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Publication number
WO2014204748A8
WO2014204748A8 PCT/US2014/041920 US2014041920W WO2014204748A8 WO 2014204748 A8 WO2014204748 A8 WO 2014204748A8 US 2014041920 W US2014041920 W US 2014041920W WO 2014204748 A8 WO2014204748 A8 WO 2014204748A8
Authority
WO
WIPO (PCT)
Prior art keywords
substructure
integrated circuit
template
optoelectronic integrated
quantum well
Prior art date
Application number
PCT/US2014/041920
Other languages
French (fr)
Other versions
WO2014204748A1 (en
Inventor
Geoff W. Taylor
Original Assignee
Opel Solar, Inc.
The University Of Connecticut
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Opel Solar, Inc., The University Of Connecticut filed Critical Opel Solar, Inc.
Priority to JP2016521457A priority Critical patent/JP2016531415A/en
Priority to CN201480034881.7A priority patent/CN105378930A/en
Priority to EP14813594.0A priority patent/EP3011595A4/en
Publication of WO2014204748A1 publication Critical patent/WO2014204748A1/en
Publication of WO2014204748A8 publication Critical patent/WO2014204748A8/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
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    • H01L29/155—Comprising only semiconductor materials
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Led Devices (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure.
PCT/US2014/041920 2013-06-19 2014-06-11 Optoelectronic integrated circuit WO2014204748A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016521457A JP2016531415A (en) 2013-06-19 2014-06-11 Optoelectronic integrated circuit
CN201480034881.7A CN105378930A (en) 2013-06-19 2014-06-11 Optoelectronic integrated circuit
EP14813594.0A EP3011595A4 (en) 2013-06-19 2014-06-11 Optoelectronic integrated circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/921,311 US9082637B2 (en) 2012-08-17 2013-06-19 Optoelectronic integrated circuit
US13/921,311 2013-06-19

Publications (2)

Publication Number Publication Date
WO2014204748A1 WO2014204748A1 (en) 2014-12-24
WO2014204748A8 true WO2014204748A8 (en) 2015-02-26

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PCT/US2014/041920 WO2014204748A1 (en) 2013-06-19 2014-06-11 Optoelectronic integrated circuit

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US (3) US9082637B2 (en)
EP (1) EP3011595A4 (en)
JP (1) JP2016531415A (en)
CN (1) CN105378930A (en)
WO (1) WO2014204748A1 (en)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9614112B2 (en) * 2013-09-11 2017-04-04 The University Of Connecticut Imaging cell array integrated circuit
GB201317637D0 (en) * 2013-10-04 2013-11-20 Johnson Matthey Plc Data Transfer Apparatus
US10324037B2 (en) * 2013-11-13 2019-06-18 Gustav Hudson Low energy laser spectroscopy LELS
US9625647B2 (en) 2014-01-29 2017-04-18 The University Of Connecticut Optoelectronic integrated circuit
US9276160B2 (en) * 2014-05-27 2016-03-01 Opel Solar, Inc. Power semiconductor device formed from a vertical thyristor epitaxial layer structure
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base
JP6224538B2 (en) * 2014-07-18 2017-11-01 勇 城之下 Method for producing material having quantum dots
WO2016014078A1 (en) * 2014-07-25 2016-01-28 Hewlett-Packard Development Company, L.P. Tunable optical device
US9698457B2 (en) 2014-07-28 2017-07-04 The University Of Connecticut Optoelectronic integrated circuitry for transmitting and/or receiving wavelength-division multiplexed optical signals
US9590742B2 (en) 2014-12-22 2017-03-07 Opel Solar, Inc. Thyristor-based optical XOR circuit
US9553715B2 (en) 2014-12-22 2017-01-24 Opel Solar, Inc. Optical phase detector for an optical phase lock loop
US9590600B2 (en) 2014-12-22 2017-03-07 Opel Solar, Inc. Thyristor-based optical flip-flop
US9209815B1 (en) 2014-12-22 2015-12-08 Opel Solar, Inc. Thyristor-based optical charge pump for an optical phase lock loop
US9559636B2 (en) 2014-12-22 2017-01-31 Opel Solar, Inc. Thyristor-based optoelectronic oscillator with tunable frequency and optical phase lock loop employing same
US9544062B2 (en) 2014-12-22 2017-01-10 Opel Solar, Inc. Coherent optical receiver
US9541945B2 (en) 2014-12-22 2017-01-10 Opel Solar, Inc. Thyristor based optical and gate and thyristor-based electrical and gate
US9590136B2 (en) 2015-06-11 2017-03-07 Opel Solar, Inc. Semiconductor device for optoelectronic integrated circuits
US9450124B1 (en) 2015-06-11 2016-09-20 Opel Solar, Inc. Fabrication methodology for optoelectronic integrated circuits
US9490336B1 (en) 2015-06-11 2016-11-08 Opel Solar, Inc. Fabrication methodology for optoelectronic integrated circuits
US9679987B2 (en) 2015-06-11 2017-06-13 The University Of Connecticut Fabrication methodology for optoelectronic integrated circuits
US9755060B2 (en) 2015-06-11 2017-09-05 Opel Solar, Inc. Fabrication methodology for optoelectronic integrated circuits
WO2017047059A1 (en) * 2015-09-14 2017-03-23 Sumitomo Electric Industries, Ltd. Semiconductor laser
US9871067B2 (en) * 2015-11-17 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Infrared image sensor component
US10269822B2 (en) * 2015-12-29 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method to fabricate uniform tunneling dielectric of embedded flash memory cell
US9812454B2 (en) 2016-02-08 2017-11-07 Kilopass Technology, Inc. Methods and systems for reducing electrical disturb effects between thyristor memory cells using buried metal cathode lines
JP6623102B2 (en) * 2016-03-31 2019-12-18 古河電気工業株式会社 Optical waveguide circuit device
CN105842782B (en) * 2016-05-05 2019-04-16 湖南大学 A kind of monolithic optoelectronic integrated circuits using graphene photoelectric device
US9735545B1 (en) 2016-07-08 2017-08-15 Northrop Grumman Systems Corporation Vertical cavity surface emitting laser with composite reflectors
CN107732651B (en) * 2016-08-12 2020-08-04 美国亚德诺半导体公司 Light emitter package
US10804399B2 (en) 2016-09-24 2020-10-13 Intel Corporation Double-sided quantum dot devices
CN106356716B (en) * 2016-11-04 2018-12-18 中国科学院半导体研究所 A kind of wide spectrum thyristor laser of GaAs base band gate electrode
CN106772797A (en) * 2016-12-20 2017-05-31 北京邮电大学 A kind of single-chip integration transceiver photoelectric chip and integrated chip array
US10116115B2 (en) * 2017-02-22 2018-10-30 Geoff W. Taylor Integrated circuit implementing a VCSEL array or VCSEL device
WO2018156863A1 (en) * 2017-02-24 2018-08-30 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Capacitive infrared photodetector
CN107046228B (en) * 2017-04-07 2019-08-06 华南师范大学 A kind of Electroabsorption Modulated Laser and preparation method thereof
CN107248535B (en) * 2017-05-03 2019-01-29 东南大学 A kind of light-operated HEMT and its control method
US11520014B2 (en) 2017-06-08 2022-12-06 Geoff W. Taylor Thyristor-based lidar detector array
US11211768B2 (en) * 2017-10-03 2021-12-28 Mitsubishi Electric Corporation Semiconductor optical integrated device
US10817780B2 (en) * 2017-10-29 2020-10-27 Christopher J. Rourk Electron transport gate circuits and methods of manufacture, operation and use
US11895931B2 (en) 2017-11-28 2024-02-06 International Business Machines Corporation Frequency tuning of multi-qubit systems
US10170681B1 (en) 2017-11-28 2019-01-01 International Business Machines Corporation Laser annealing of qubits with structured illumination
US10355193B2 (en) 2017-11-28 2019-07-16 International Business Machines Corporation Flip chip integration on qubit chips
US10418540B2 (en) 2017-11-28 2019-09-17 International Business Machines Corporation Adjustment of qubit frequency through annealing
US10340438B2 (en) 2017-11-28 2019-07-02 International Business Machines Corporation Laser annealing qubits for optimized frequency allocation
TWI661571B (en) * 2018-07-06 2019-06-01 王俊凱 Gallium arsenide band-pass detector for detecting red light and infrared light
US11444184B1 (en) * 2018-08-27 2022-09-13 U.S. Government As Represented By The Director, National Security Agency System for induced quantum dots for material characterization, qubits, and quantum computers
TWI685968B (en) * 2018-11-23 2020-02-21 財團法人工業技術研究院 Enhancement mode gallium nitride based transistor device and manufacturing method thereof
JP7395273B2 (en) * 2019-07-02 2023-12-11 ローム株式会社 Nitride semiconductor device and its manufacturing method
JP7318434B2 (en) * 2019-09-09 2023-08-01 富士通オプティカルコンポーネンツ株式会社 Optical semiconductor device, optical transceiver using the same, and method for manufacturing optical semiconductor device
CN110543740B (en) * 2019-09-12 2023-11-24 湘潭大学 Method for researching micro-discharge based on rectangular curved waveguide
CN110942152B (en) * 2019-10-29 2024-02-13 本源量子计算科技（合肥）股份有限公司 Quantum chip system, quantum computing processing system and electronic equipment
WO2021257317A1 (en) * 2020-06-17 2021-12-23 Applied Materials, Inc. Gate interface engineering with doped layer
CN111952155B (en) * 2020-08-21 2022-09-06 联合微电子中心有限责任公司 Semiconductor device, method of manufacturing the same, and semiconductor integrated circuit
US11799268B2 (en) 2020-08-24 2023-10-24 Geoff W. Taylor Semiconductor integrated circuit and methodology for making same
FR3114887A1 (en) * 2020-10-06 2022-04-08 Marc Grosman TRAVELING WAVE OPTICAL AMPLIFIER WHOSE AMPLIFICATION IS CONTROLLED BY FIELD-EFFECT TRANSISTORS
FR3115371A1 (en) * 2020-10-20 2022-04-22 Marc Grosman THz electromagnetic wave generator controlled by field effect transistors.
US11934916B2 (en) 2021-03-25 2024-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Electronic device and manufacturing method thereof
CN113411132B (en) * 2021-06-17 2023-03-31 桂林电子科技大学 Multifunctional optical repeater system
CN113411129B (en) * 2021-06-17 2023-03-31 桂林电子科技大学 Duplex system for optical communication
CN113540283B (en) * 2021-06-18 2023-01-24 西安理工大学 Two-dimensional electron gas type photoconductive longitudinal switch and manufacturing method thereof
WO2023000272A1 (en) * 2021-07-22 2023-01-26 中山大学 High-gain photoelectric detector
CN113644150A (en) * 2021-07-22 2021-11-12 中山大学 High-gain photoelectric detector
CN114362710B (en) * 2021-12-03 2024-03-29 中国科学院上海微系统与信息技术研究所 Acoustic wave resonator

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5544268A (en) 1994-09-09 1996-08-06 Deacon Research Display panel with electrically-controlled waveguide-routing
US5790583A (en) 1995-05-25 1998-08-04 Northwestern University Photonic-well Microcavity light emitting devices
US6849866B2 (en) 1996-10-16 2005-02-01 The University Of Connecticut High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration
US6031243A (en) 1996-10-16 2000-02-29 Geoff W. Taylor Grating coupled vertical cavity optoelectronic devices
US6720589B1 (en) 1998-09-16 2004-04-13 Kabushiki Kaisha Toshiba Semiconductor device
JP3323844B2 (en) 1999-01-18 2002-09-09 キヤノン株式会社 gyro
US6414340B1 (en) 1999-11-04 2002-07-02 Raytheon Company Field effect transistor and method for making the same
US6870207B2 (en) 2000-04-24 2005-03-22 The University Of Connecticut III-V charge coupled device suitable for visible, near and far infra-red detection
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
US6865314B1 (en) 2001-01-11 2005-03-08 Steven M. Blair Tunable optical wavelength filters and multi-level optical integrated circuits
WO2002087031A2 (en) 2001-01-11 2002-10-31 Princeton Lightwave, Inc. Multi-level closed loop resonators and method for fabricating same
WO2002071562A2 (en) 2001-03-02 2002-09-12 Science & Technology Corporation @ Unm Quantum dot vertical cavity surface emitting laser
US6479844B2 (en) 2001-03-02 2002-11-12 University Of Connecticut Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit
US6618413B2 (en) 2001-12-21 2003-09-09 Xerox Corporation Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure
US6873273B2 (en) 2002-10-25 2005-03-29 The University Of Connecticut Photonic serial digital-to-analog converter employing a heterojunction thyristor device
US6995407B2 (en) 2002-10-25 2006-02-07 The University Of Connecticut Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices
US6841795B2 (en) 2002-10-25 2005-01-11 The University Of Connecticut Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
US7332752B2 (en) 2002-10-25 2008-02-19 The University Of Connecticut Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal
US6853014B2 (en) 2002-10-25 2005-02-08 The University Of Connecticut Optoelectronic circuit employing a heterojunction thyristor device that performs high speed sampling
US6954473B2 (en) 2002-10-25 2005-10-11 Opel, Inc. Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay
JP2004155337A (en) 2002-11-07 2004-06-03 Advics:Kk Negative pressure type brake fluid pressure generating device
CN1813381A (en) 2003-06-27 2006-08-02 应用材料公司 Pulsed quantum dot laser system with low jitter
US7282732B2 (en) 2003-10-24 2007-10-16 Stc. Unm Quantum dot structures
JP2005252032A (en) 2004-03-04 2005-09-15 Furukawa Electric Co Ltd:The Surface emitting laser element and laser module using it
US7208753B2 (en) * 2005-03-17 2007-04-24 The United States Of America As Represented By The Secretary Of The Navy Enhancement mode single electron transistor
US9040398B2 (en) 2006-05-16 2015-05-26 Cree, Inc. Method of fabricating seminconductor devices including self aligned refractory contacts
US7853108B2 (en) * 2006-12-29 2010-12-14 Massachusetts Institute Of Technology Fabrication-tolerant waveguides and resonators
JP5026905B2 (en) * 2007-10-02 2012-09-19 富士通株式会社 Semiconductor light emitting device and manufacturing method thereof
JP5437253B2 (en) * 2007-10-12 2014-03-12 エイジェンシー フォア サイエンス テクノロジー アンド リサーチ Fabrication of red and white nitride based LEDs without phosphors
US9153594B2 (en) * 2008-01-09 2015-10-06 Faquir C. Jain Nonvolatile memory and three-state FETs using cladded quantum dot gate structure
US7657132B1 (en) 2008-06-18 2010-02-02 Hrl Laboratories, Llc Optoelectronic modulator and electric-field sensor with multiple optical-waveguide gratings
JP4538516B2 (en) 2008-08-08 2010-09-08 防衛省技術研究本部長 Optical semiconductor device
WO2010059132A1 (en) 2008-11-21 2010-05-27 Agency For Science, Technology And Research A light emitting diode structure and a method of forming a light emitting diode structure
GB2476250A (en) * 2009-12-16 2011-06-22 Univ Sheffield Optical device and fabrication method involving selective quantum well intermixing
US8331142B2 (en) * 2010-12-16 2012-12-11 Technische Universitat Berlin Memory
KR20140092804A (en) 2011-08-18 2014-07-24 오펄 솔라, 인코포레이티드 Optical closed loop microresonator and thyristor memory device

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