WO2013075706A3 - Radio-frequency class d mosfet amplifier module - Google Patents

Radio-frequency class d mosfet amplifier module Download PDF

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Publication number
WO2013075706A3
WO2013075706A3 PCT/DE2012/100355 DE2012100355W WO2013075706A3 WO 2013075706 A3 WO2013075706 A3 WO 2013075706A3 DE 2012100355 W DE2012100355 W DE 2012100355W WO 2013075706 A3 WO2013075706 A3 WO 2013075706A3
Authority
WO
WIPO (PCT)
Prior art keywords
amplifier module
radio
frequency class
mosfet amplifier
mosfet
Prior art date
Application number
PCT/DE2012/100355
Other languages
German (de)
French (fr)
Other versions
WO2013075706A2 (en
Inventor
Thomas Kirchmeier
Michael Glück
Paul Mourick
Original Assignee
Hüttinger Elektronik Gmbh + Co. Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hüttinger Elektronik Gmbh + Co. Kg filed Critical Hüttinger Elektronik Gmbh + Co. Kg
Publication of WO2013075706A2 publication Critical patent/WO2013075706A2/en
Publication of WO2013075706A3 publication Critical patent/WO2013075706A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices

Abstract

In a radio-frequency class D MOSFET amplifier module (10) suitable for operation from supply voltages ≥ 100 V and at output powers ≥ 500 W and frequencies ≥ 3 MHz, comprising a half bridge formed from two series-connected switching elements (11, 12) embodied as MOSFETs and at least one driver (15), a driver supply voltage connection (43) and an output connection (24a, 24b) are arranged on an identical connection side of the amplifier module (10).
PCT/DE2012/100355 2011-11-25 2012-11-22 Radio-frequency class d mosfet amplifier module WO2013075706A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011087106.3 2011-11-25
DE102011087106.3A DE102011087106B4 (en) 2011-11-25 2011-11-25 High frequency Class D MOSFET amplifier module

Publications (2)

Publication Number Publication Date
WO2013075706A2 WO2013075706A2 (en) 2013-05-30
WO2013075706A3 true WO2013075706A3 (en) 2013-10-03

Family

ID=47631150

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2012/100355 WO2013075706A2 (en) 2011-11-25 2012-11-22 Radio-frequency class d mosfet amplifier module

Country Status (2)

Country Link
DE (1) DE102011087106B4 (en)
WO (1) WO2013075706A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10264663B1 (en) * 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031069A (en) * 1989-12-28 1991-07-09 Sundstrand Corporation Integration of ceramic capacitor
JPH0538160A (en) * 1991-07-31 1993-02-12 Sanyo Electric Co Ltd Inverter circuit
EP1544915A2 (en) * 2003-12-19 2005-06-22 Hitachi Industrial Equipment Systems Co. Ltd. Electronic module heat sink mounting arrangement
DE102005036116A1 (en) * 2005-08-01 2007-02-15 Infineon Technologies Ag Power semi-conductor module comprises has both first semi-conductor chip, with semi-conductor element, and second semi-conductor chip, with control electronics, soldered on structured metalization
EP1968188A1 (en) * 2007-03-09 2008-09-10 HÜTTINGER Elektronik GmbH + Co. KG Class D amplifier assembly

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8709180U1 (en) * 1987-07-03 1987-12-03 Brandl, Helmut, 7750 Konstanz, De
WO2009012735A1 (en) 2007-07-23 2009-01-29 Hüttinger Elektronik Gmbh + Co. Kg Plasma supply device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031069A (en) * 1989-12-28 1991-07-09 Sundstrand Corporation Integration of ceramic capacitor
JPH0538160A (en) * 1991-07-31 1993-02-12 Sanyo Electric Co Ltd Inverter circuit
EP1544915A2 (en) * 2003-12-19 2005-06-22 Hitachi Industrial Equipment Systems Co. Ltd. Electronic module heat sink mounting arrangement
DE102005036116A1 (en) * 2005-08-01 2007-02-15 Infineon Technologies Ag Power semi-conductor module comprises has both first semi-conductor chip, with semi-conductor element, and second semi-conductor chip, with control electronics, soldered on structured metalization
EP1968188A1 (en) * 2007-03-09 2008-09-10 HÜTTINGER Elektronik GmbH + Co. KG Class D amplifier assembly

Also Published As

Publication number Publication date
DE102011087106B4 (en) 2017-10-19
DE102011087106A1 (en) 2013-05-29
WO2013075706A2 (en) 2013-05-30

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