WO2012047816A3 - Apparatus and methods for evaporation including test wafer holder and apparatus and methods for detecting evaporation conditions - Google Patents

Apparatus and methods for evaporation including test wafer holder and apparatus and methods for detecting evaporation conditions Download PDF

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Publication number
WO2012047816A3
WO2012047816A3 PCT/US2011/054644 US2011054644W WO2012047816A3 WO 2012047816 A3 WO2012047816 A3 WO 2012047816A3 US 2011054644 W US2011054644 W US 2011054644W WO 2012047816 A3 WO2012047816 A3 WO 2012047816A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
metal
wafer holder
evaporation
onto
Prior art date
Application number
PCT/US2011/054644
Other languages
French (fr)
Other versions
WO2012047816A2 (en
Inventor
Lam T. Luu
Shiban K. Tiku
Richard S. Bingle
Jens A. Riege
Heather L. Knoedler
Daniel C. Weaver
Original Assignee
Skyworks Solutions, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/898,632 external-priority patent/US8022448B1/en
Priority claimed from US12/898,616 external-priority patent/US8030725B1/en
Application filed by Skyworks Solutions, Inc. filed Critical Skyworks Solutions, Inc.
Publication of WO2012047816A2 publication Critical patent/WO2012047816A2/en
Publication of WO2012047816A3 publication Critical patent/WO2012047816A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Abstract

Apparatus and methods for evaporating metal onto semiconductor wafers are disclosed. One such apparatus can include an evaporation chamber that includes a wafer holder and a test wafer holder that is separate and spaced apart from the wafer holder. A metal can be evaporated onto production wafers positioned in the wafer holder while metal is evaporated on a test wafer positioned in a test wafer holder. Apparatus and methods for detecting deposition conditions, such as evaporation conditions in an evaporator for evaporating metal onto semiconductor wafers, are also disclosed. One such apparatus can include a crystal monitor sensor configured to detect metal vapor associated with a metal source prior to metal deposition onto a semiconductor wafer. The apparatus can also include a shutter configured to remain in a closed position when the crystal monitor sensor detects an undesired condition, so as to prevent metal deposition onto the semiconductor wafer.
PCT/US2011/054644 2010-10-05 2011-10-03 Apparatus and methods for evaporation including test wafer holder and apparatus and methods for detecting evaporation conditions WO2012047816A2 (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US12/898,632 US8022448B1 (en) 2010-10-05 2010-10-05 Apparatus and methods for evaporation including test wafer holder
US12/898,616 US8030725B1 (en) 2010-10-05 2010-10-05 Apparatus and methods for detecting evaporation conditions
US12/898,616 2010-10-05
US12/898,632 2010-10-05
US13/179,382 2011-07-08
US13/179,382 US8481344B2 (en) 2010-10-05 2011-07-08 Methods of evaporating metal onto a semiconductor wafer in a test wafer holder
US13/186,356 US8546205B2 (en) 2010-10-05 2011-07-19 Detecting a deposition condition
US13/186,356 2011-07-19

Publications (2)

Publication Number Publication Date
WO2012047816A2 WO2012047816A2 (en) 2012-04-12
WO2012047816A3 true WO2012047816A3 (en) 2012-06-14

Family

ID=45928358

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/054644 WO2012047816A2 (en) 2010-10-05 2011-10-03 Apparatus and methods for evaporation including test wafer holder and apparatus and methods for detecting evaporation conditions

Country Status (1)

Country Link
WO (1) WO2012047816A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8022448B1 (en) 2010-10-05 2011-09-20 Skyworks Solutions, Inc. Apparatus and methods for evaporation including test wafer holder

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5112642A (en) * 1990-03-30 1992-05-12 Leybold Inficon, Inc. Measuring and controlling deposition on a piezoelectric monitor crystal
US20030017717A1 (en) * 2001-07-18 2003-01-23 Ahn Kie Y. Methods for forming dielectric materials and methods for forming semiconductor devices
US20040255857A1 (en) * 2003-05-16 2004-12-23 Chow Peter P. Thin-film deposition evaporator
JP2007113091A (en) * 2005-10-21 2007-05-10 Pentax Corp Method for forming multilayer film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5112642A (en) * 1990-03-30 1992-05-12 Leybold Inficon, Inc. Measuring and controlling deposition on a piezoelectric monitor crystal
US20030017717A1 (en) * 2001-07-18 2003-01-23 Ahn Kie Y. Methods for forming dielectric materials and methods for forming semiconductor devices
US20040255857A1 (en) * 2003-05-16 2004-12-23 Chow Peter P. Thin-film deposition evaporator
JP2007113091A (en) * 2005-10-21 2007-05-10 Pentax Corp Method for forming multilayer film

Also Published As

Publication number Publication date
WO2012047816A2 (en) 2012-04-12

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