WO2010120372A3 - Light emitting semiconductor methods and devices - Google Patents

Light emitting semiconductor methods and devices Download PDF

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Publication number
WO2010120372A3
WO2010120372A3 PCT/US2010/001133 US2010001133W WO2010120372A3 WO 2010120372 A3 WO2010120372 A3 WO 2010120372A3 US 2010001133 W US2010001133 W US 2010001133W WO 2010120372 A3 WO2010120372 A3 WO 2010120372A3
Authority
WO
WIPO (PCT)
Prior art keywords
region
base
drain
emitter
providing
Prior art date
Application number
PCT/US2010/001133
Other languages
French (fr)
Other versions
WO2010120372A2 (en
Inventor
Gabriel Walter
Milton Feng
Nick Holonyak
Han Wui Then
Chao-Hsin Wu
Original Assignee
The Board Of Trustees Of The University Of Illinois
Quantum Electro Opto Systems Sdn. Bhd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Board Of Trustees Of The University Of Illinois, Quantum Electro Opto Systems Sdn. Bhd. filed Critical The Board Of Trustees Of The University Of Illinois
Priority to CA2758595A priority Critical patent/CA2758595A1/en
Priority to AU2010237044A priority patent/AU2010237044B2/en
Priority to EP10764775A priority patent/EP2419975A2/en
Priority to JP2012505890A priority patent/JP5789597B2/en
Priority to CN201080016839.4A priority patent/CN102396121B/en
Publication of WO2010120372A2 publication Critical patent/WO2010120372A2/en
Publication of WO2010120372A3 publication Critical patent/WO2010120372A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0035—Simulations of laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Abstract

A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween. In a further embodiment lateral scaling is used to control device speed for high frequency operation.
PCT/US2010/001133 2009-04-17 2010-04-16 Light emitting semiconductor methods and devices WO2010120372A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CA2758595A CA2758595A1 (en) 2009-04-17 2010-04-16 Light emitting semiconductor methods and devices
AU2010237044A AU2010237044B2 (en) 2009-04-17 2010-04-16 Light emitting semiconductor methods and devices
EP10764775A EP2419975A2 (en) 2009-04-17 2010-04-16 Light emitting semiconductor methods and devices
JP2012505890A JP5789597B2 (en) 2009-04-17 2010-04-16 Light emitting semiconductor method and device
CN201080016839.4A CN102396121B (en) 2009-04-17 2010-04-16 Light emitting semiconductor methods and devices

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US21295109P 2009-04-17 2009-04-17
US61/212,951 2009-04-17
US26811909P 2009-06-09 2009-06-09
US61/268,119 2009-06-09

Publications (2)

Publication Number Publication Date
WO2010120372A2 WO2010120372A2 (en) 2010-10-21
WO2010120372A3 true WO2010120372A3 (en) 2011-01-27

Family

ID=42983053

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/001133 WO2010120372A2 (en) 2009-04-17 2010-04-16 Light emitting semiconductor methods and devices

Country Status (8)

Country Link
EP (1) EP2419975A2 (en)
JP (1) JP5789597B2 (en)
KR (1) KR20120008055A (en)
CN (2) CN104201564A (en)
AU (1) AU2010237044B2 (en)
CA (1) CA2758595A1 (en)
TW (1) TW201101530A (en)
WO (1) WO2010120372A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103456873A (en) * 2012-06-01 2013-12-18 李学旻 Light emitting diode element
US9431572B2 (en) 2012-08-02 2016-08-30 Quantum Electro Opto Systems Sdn. Bhd. Dual mode tilted-charge devices and methods
CN105633227B (en) * 2015-12-29 2018-04-17 华南师范大学 High Speed Modulation light emitting diode and its manufacture method
CN105655454B (en) * 2015-12-29 2018-05-08 华南师范大学 High modulation light emitting diode and preparation method thereof
JP7216270B2 (en) * 2018-09-28 2023-02-01 日亜化学工業株式会社 semiconductor light emitting device
CN113206448B (en) * 2021-04-30 2023-04-07 中国科学院半导体研究所 Laser with current barrier layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176367A (en) * 1977-03-23 1979-11-27 Tokyo Shibaura Electric Co., Ltd. Semiconductor optical device
US5796714A (en) * 1994-09-28 1998-08-18 Matsushita Electric Industrial Co., Ltd. Optical module having a vertical-cavity surface-emitting laser
US20050040387A1 (en) * 2003-08-22 2005-02-24 The Board Of Trustees Of The University Of Illinois Semiconductor method and device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461482A (en) * 1977-10-26 1979-05-17 Nec Corp Power rectifier of low loss and high speed switching
US4513423A (en) * 1982-06-04 1985-04-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Arrangement for damping the resonance in a laser diode
JPS61231788A (en) * 1985-04-08 1986-10-16 Matsushita Electric Ind Co Ltd Semiconductor light emitting element
JPS61270885A (en) * 1985-05-24 1986-12-01 Matsushita Electric Ind Co Ltd Semiconductor light emitting element
JP2003249678A (en) * 2000-07-04 2003-09-05 Matsushita Electric Ind Co Ltd Semiconductor light emitting element and its driving device
WO2003081676A1 (en) * 2002-03-25 2003-10-02 Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center Thin film transistor, circuit device and liquid crystal display
US7354780B2 (en) * 2003-08-22 2008-04-08 The Board Of Trustees Of The University Of Illinois Semiconductor light emitting devices and methods
JP2008508559A (en) * 2004-07-30 2008-03-21 ノバラックス，インコーポレイティド Projection display apparatus, system and method
CN101238619A (en) * 2005-02-28 2008-08-06 伊利诺斯大学理事会 Semiconductor bipolar light emitting and laser devices and methods
JP2007096160A (en) * 2005-09-30 2007-04-12 Oki Data Corp Semiconductor composite device, printer head using the same, and image forming apparatus
US7535034B2 (en) * 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
KR20110112415A (en) * 2009-01-08 2011-10-12 더 보드 오브 트러스티스 오브 더 유니버시티 오브 일리노이 Light emitting and lasing semiconductor devices and methods

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176367A (en) * 1977-03-23 1979-11-27 Tokyo Shibaura Electric Co., Ltd. Semiconductor optical device
US5796714A (en) * 1994-09-28 1998-08-18 Matsushita Electric Industrial Co., Ltd. Optical module having a vertical-cavity surface-emitting laser
US20050040387A1 (en) * 2003-08-22 2005-02-24 The Board Of Trustees Of The University Of Illinois Semiconductor method and device

Also Published As

Publication number Publication date
JP5789597B2 (en) 2015-10-07
TW201101530A (en) 2011-01-01
CN102396121B (en) 2014-08-20
WO2010120372A2 (en) 2010-10-21
JP2012524398A (en) 2012-10-11
AU2010237044A1 (en) 2011-12-01
CN102396121A (en) 2012-03-28
CA2758595A1 (en) 2010-10-21
CN104201564A (en) 2014-12-10
KR20120008055A (en) 2012-01-25
AU2010237044B2 (en) 2014-11-06
EP2419975A2 (en) 2012-02-22

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