WO2010063614A3 - Photovoltaic layer arrangement - Google Patents

Photovoltaic layer arrangement Download PDF

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Publication number
WO2010063614A3
WO2010063614A3 PCT/EP2009/065702 EP2009065702W WO2010063614A3 WO 2010063614 A3 WO2010063614 A3 WO 2010063614A3 EP 2009065702 W EP2009065702 W EP 2009065702W WO 2010063614 A3 WO2010063614 A3 WO 2010063614A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
investment material
material layer
electrode layer
layer arrangement
Prior art date
Application number
PCT/EP2009/065702
Other languages
German (de)
French (fr)
Other versions
WO2010063614A2 (en
Inventor
Manfred Schrey
Original Assignee
Fachhochschule Koeln
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fachhochschule Koeln filed Critical Fachhochschule Koeln
Publication of WO2010063614A2 publication Critical patent/WO2010063614A2/en
Publication of WO2010063614A3 publication Critical patent/WO2010063614A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The invention relates to a photovoltaic layer arrangement (10) comprising an electrically conducting first electrode layer (16) and an electrically conducting second electrode layer (32) which is transparent to solar radiation. The photovoltaic layer arrangement (10) further comprises an electrically insulating investment material layer (18), which is arranged between the two electrode layers (16, 32), and a plurality of semiconductor particles (24), which each comprise a p-doped region (26), an n-doped region (28), and a p-n junction (30). The semiconductor particles (24) are embedded in the investment material layer (18) so as to be arranged next to each other and in such a way that the p-doped and the n-doped regions (26, 28) protrude from the investment material layer through the same side (22, 20), respectively, of the investment material layer (18) and project into the adjacent first or second electrode layer (16, 32), respectively, in order to electrically connect to said electrode layer.
PCT/EP2009/065702 2008-12-01 2009-11-24 Photovoltaic layer arrangement WO2010063614A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008059728.7 2008-12-01
DE200810059728 DE102008059728A1 (en) 2008-12-01 2008-12-01 Photovoltaic layer arrangement

Publications (2)

Publication Number Publication Date
WO2010063614A2 WO2010063614A2 (en) 2010-06-10
WO2010063614A3 true WO2010063614A3 (en) 2010-11-25

Family

ID=42134086

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/065702 WO2010063614A2 (en) 2008-12-01 2009-11-24 Photovoltaic layer arrangement

Country Status (2)

Country Link
DE (1) DE102008059728A1 (en)
WO (1) WO2010063614A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4614835A (en) * 1983-12-15 1986-09-30 Texas Instruments Incorporated Photovoltaic solar arrays using silicon microparticles
US5466301A (en) * 1994-06-29 1995-11-14 Texas Instruments Incorporated Solar cell having an output-increasing, protective cover
US20060086384A1 (en) * 2002-06-21 2006-04-27 Josuke Nakata Light receiving or light emitting device and itsd production method
US20070089782A1 (en) * 2003-10-02 2007-04-26 Scheuten Glasgroep Spherical or grain-shaped semiconductor element for use in solar cells and method for producing the same; method for producing a solar cell comprising said semiconductor element and solar cell
US20070089780A1 (en) * 2003-10-02 2007-04-26 Scheuten Glasgroep Serial circuit of solar cells with integrated semiconductor bodies, corresponding method for production and module with serial connection

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3904559B2 (en) * 2001-10-19 2007-04-11 仗祐 中田 Light emitting or receiving semiconductor module and method for manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4614835A (en) * 1983-12-15 1986-09-30 Texas Instruments Incorporated Photovoltaic solar arrays using silicon microparticles
US5466301A (en) * 1994-06-29 1995-11-14 Texas Instruments Incorporated Solar cell having an output-increasing, protective cover
US20060086384A1 (en) * 2002-06-21 2006-04-27 Josuke Nakata Light receiving or light emitting device and itsd production method
US20070089782A1 (en) * 2003-10-02 2007-04-26 Scheuten Glasgroep Spherical or grain-shaped semiconductor element for use in solar cells and method for producing the same; method for producing a solar cell comprising said semiconductor element and solar cell
US20070089780A1 (en) * 2003-10-02 2007-04-26 Scheuten Glasgroep Serial circuit of solar cells with integrated semiconductor bodies, corresponding method for production and module with serial connection

Also Published As

Publication number Publication date
DE102008059728A1 (en) 2010-06-02
WO2010063614A2 (en) 2010-06-10

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