WO2009134689A2 - Robust metal film encapsulation - Google Patents
Robust metal film encapsulation Download PDFInfo
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- WO2009134689A2 WO2009134689A2 PCT/US2009/041664 US2009041664W WO2009134689A2 WO 2009134689 A2 WO2009134689 A2 WO 2009134689A2 US 2009041664 W US2009041664 W US 2009041664W WO 2009134689 A2 WO2009134689 A2 WO 2009134689A2
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- WIPO (PCT)
- Prior art keywords
- battery
- bonding layer
- electrical contact
- cell structure
- layer
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/50—Current conducting connections for cells or batteries
- H01M50/543—Terminals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/10—Primary casings, jackets or wrappings of a single cell or a single battery
- H01M50/116—Primary casings, jackets or wrappings of a single cell or a single battery characterised by the material
- H01M50/124—Primary casings, jackets or wrappings of a single cell or a single battery characterised by the material having a layered structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/50—Current conducting connections for cells or batteries
- H01M50/528—Fixed electrical connections, i.e. not intended for disconnection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/50—Current conducting connections for cells or batteries
- H01M50/531—Electrode connections inside a battery casing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/40—Printed batteries, e.g. thin film batteries
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the field of this invention includes the device, composition, method of depositing, fabrication, and more specifically encapsulation of solid-state, thin-film, secondary and primary electrochemical devices, including batteries.
- Typical electrochemical devices comprise multiple electrically active layers such as an anode, cathode, electrolyte, substrate, current collectors, etc.
- Some layers such a for example, an anode layer comprising Lithium, are comprised of materials that are very environmentally sensitive. Such batteries require an encapsulation to protect such environmentally sensitive material.
- Other schemes encapsulate the device with pouch, for example, made of metal and plastic, that seals around the perimeter of the device. As the temperature changes the residual gas atmosphere within the metal and plastic pouch expands and/or contracts. This expansion and/or contraction ma blow out the seals of the metal and plastic pouch or create other problems, thus eliminating the encapsulating benefits of the pouch.
- Typical electrochemical devices also have tabs that extend out from the substrate. These tabs provide electrically conductive contact points for the battery. These tabs can be fragile and can break when gripped or secured from the outside and create difficulties when trying to design the encapsulation to maintain a proper seal around the tabs
- Solid-state, thin-film, secondary and primary electrochemical devices including batteries
- One exemplary embodiment of the present invention includes a battery with ⁇ first electrical contact; a bonding layer coupled with the first electrical contact and having ar embedded conductor; at least one cell structure; and a second electrical contact, wherein the bonding layer and the at least one cell structure are sandwiched between the first and second contact layers.
- the bonding layer may be selectively conductive through the embedded conductor.
- the cell structure may further be in selective electrical contact with the first electrical contact via the embedded conductor.
- the first electrical contact may, for example, include an encapsulate metal.
- the second electrical contact may, for example include a substrate.
- the bonding layer may be an adhesive material, an insulating material, a plastic, glass, and/or fiberglass.
- the conductor may be a tab, a wire, multiple wires, a wire mesh, perforated metal, a metal coatir applied to the adhesive layer, or a disk.
- the conductor may be woven within the bonding layer and the bonding layer may include a slit within which the embedded conductor is woven.
- the bonding layer may be an adhesive material containing one or more conductive portions that may be, for example, conductive powders, bodies or particles applied to one or more selected areas.
- the first and second contacts may be made from a conductive material such as, for example, gold, platinum, stainless steel, titanium, zirconium, cobalt, aluminum, indium, nickel, copper, silver, carbon, bronze, brass, beryllium, and/or oxides, nitrides, and alloys thereof.
- An insulating layer on the first and/or second contact may also be included.
- the insulating layer may be, for example, a plastic.
- the cell structure may include an anode an electrolyte; a cathode, and a barrier layer.
- the cathode may, for example, not be anneale or annealed using rapid thermal anneal methods.
- Another exemplary embodiment of the present invention includes method of manufacturing a thin film battery having, in no particular order, the steps of creating a selectively conductive bonding layer; coupling the bonding layer with a first contact layer; coupling a first side of a cell structure with a second contact layer; and coupling a second si( of the cell structure with the bonding layer.
- Alternate steps may include creating a cell structure with an anode, cathode, and electrolyte layers; embedding a conductor within the bonding layer; weaving at least one conductive wire through the bonding layer wherein selective portions of the conductive wire are exposed; heating the bonding layer and compressing the conductor within the bonding layer; and insulating the battery with an insulating material.
- a reinforcement layer including KEVLAR®, fiberglass, plastic, glass o other insulating material may also be embedded within the bonding layer. This reinforceme; layer is selectively conductive.
- Another exemplary embodiment of the present invention is a device having a electrochemical device with at least one notch; and a metal foil.
- the metal foil may encapsulate the electrochemical device and a portion of the metal foil extends over the notch providing an electrical contact tab on the metal foil over the notched portion of the electrochemical device.
- the contact area may also have a hole.
- the metal foil may have on or more openings.
- the device may also have a second electrochemical device with a metal foil encapsulating both electrochemical devices. Furthermore, there may be a number of electrochemical devices with metal foils there between. The metal foil encapsulates or lies over the electrochemical device.
- the metal foil may further include a cathode element of the electrochemical device.
- the electrochemical device may have a substrate and the metal foil may also be conductively attached to the substrate.
- the metal foil may be made of stainless steel or any other metallic substance having the necessary characteristics and properties such as a requisite amount of conductivity.
- the device may, for example, als ⁇ include an insulating layer.
- the metal foil may, for example, be less than 100 microns thick, less than 50 microns thick, or less than 25 microns thick.
- Another exemplary embodiment of the present invention includes a method c manufacturing an electrochemical device comprising the steps of providing an electrochemical device the may include the steps of providing a substrate; and providing a notch in the electrochemical device.
- This exemplary embodiment may also, for example, include the step of encapsulating the substrate with a metal foil.
- the metal foil extends over the area notched in the step providing a notch and is conductively bonded to the substrate.
- This embodiment may also further include the step oi fabricating a cathode on the substrate by rapid thermal anneal.
- this exemplary embodiment may include the steps of providing a cathode, anode, electrolyte, current collector, barrier layer, an insulating material on the metal foil, and/or a second electrochemical device wherein the second electrochemical device is encapsulated by the metal foil.
- This exemplary embodiment may also include the step of providing openings in the metal foil. These openings may be prefabricated in the metal foil.
- Another exemplary embodiment of the present invention includes a battery with a first electrical contact, a bonding layer coupled with the first electrical contact and having an embedded conductor; at least one cell structure; and a second electrical contact, wherein the bonding layer and the at least one cell structure are sandwiched between the firs and second contact layers.
- the bonding layer may be selectively conductive through the embedded conductor.
- the cell structure may further be in selective electrical contact with tl first electrical contact via the embedded conductor.
- the conductor may comprise elements such as Li, B, graphitic carbon, Al, Si Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Hf, Ta, W, Re, Os Ir, Pt, Au, Pb, any alloy thereof, and stainless steel.
- the conductor may also be covered wit! an electrically insulating film or a mechanically robust film.
- the insulating film may comprise, for example, Lipon, BeO, B 2 O 3 , BN, borate glass, Al 2 O 3 , AlN, SiO 2 , Si 3 N 4 , silical glass, ScO x , TiO x , VO x , CrO x , FeO x , YO x , ZrO x , NbO x , MoO x , HfO x , TaO x , WO x , polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high- density polytheylenes, Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides, acetal delrin, phenolics, fluoroplastics, polyurethanes, polystyrenes, acrylonitrile-butadiene-styrenes (ABS), Keton
- the mechanically robust film may comprise, for example, Lipon, borides, carbides, nitrides, oxides, polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high-density polytheylenes, Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides, acetal delrin, phenolics, fluoroplastics, polyurethanes, polystyrenes, acrylonitrile-butadiene-styrenes (ABS), Keton PEEK, Tenite resins, and any combination thereof.
- UHMW Ultra High Molecular Weight
- the first electrical contact may itself be a conductor or an insulating layer.
- the insulating layer may be a ceramic comprising BeO, B 2 O 3 , BN, borate glass, AI 2 O 3 , AlN SiO 2 , Si 3 N 4 , silicate glass, ScO x , TiO x , VO x , CrO x , FeO x , YO x , ZrO x , NbO x , MoO x , HfO x , TaO x , WO x , and any combination thereof.
- the insulating layer may be a polymer material comprising polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high-density polytheylenes, Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides, acetal delrin, phenolics, fluoroplastics, polyurethanes, polystyrenes, acrylonitrile-butadiene-styrenes (ABS), Keton PEEK, and Tenite resins.
- the insulating layer may also be a composite material whose components may comprise any the materials mentioned above.
- the bonding layer may comprise multiple layers (for example, two, three, four, or five layers) and each or multiple layers may comprise an adhesive material.
- Both tb bonding layer and the adhesive material may comprise thermoplastic, thermally set, ethylene methacrylic acid (E/MAA) copolymer, ethylene methacrylic acid metallate (E/MAA) copolymer, cyano-acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages, urea-formaldehyde resins, vinyl chlorides, and low-density polyethylene (LDPE).
- E/MAA ethylene methacrylic acid
- E/MAA ethylene methacrylic acid metallate copolymer
- cyano-acrylates epoxies
- fluoro-acrylates polyimides containing ether linkages
- urea-formaldehyde resins vinyl chlorides
- low-density polyethylene (LDPE) low-density polyethylene
- the bonding may further comprise, for example, polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high-density polytheylenes, Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides, acetal delrin, phenolics, fluoroplastics, polyurethanes, polystyrenes, acrylonitrile-butadiene-styrenes (ABS), Keton PEEK, Tenite resins, oxide ceramic, nitride ceramic, carbide ceramic, silicate based glass, non-silicate based glass, fiberglass, and any combination thereof.
- UHMW Ultra High Molecular Weight
- the adhesive material may further comprise, for example, gold-coated polymer spheres, solder-type alloys, carbon, Ni, Cu, Au, Ag, and metallic powders.
- Another exemplary embodiment of the present invention includes a battery with a first electrical contact; at least one cell structure; a bonding layer coupled with the firsi electrical contact; and a second electrical contact, wherein the first electrical contact is mechanically deformed to make electrical contact with the cell structure through the bonding layer, wherein the bonding layer and the cell structure are sandwiched between the first and second contact layers, and wherein the bonding layer may comprise multiple layers.
- Another exemplary embodiment of the present invention includes a battery with at least one cell structure; an insulating layer comprising at least one layer; at least one embedded conductor inside the insulating layer wherein the conductor acts as a first electric contact; and a second electrical contact, wherein the cell structure is sandwiched between th insulating layer and the second contact layer.
- Another exemplary embodiment of the present invention includes a battery with more than one cell structures stacked onto each other; wherein each cell structure comprises a first electrical contact, a second electrical contact, and a bonding layer; wherein the bonding layer is sandwiched between the first electrical contact of a first cell structure and the second electrical contact of a neighboring cell structure and comprises more than on layer; wherein the first contact of said first cell structure further comprises at least one embedded conductor.
- the bonding layer in each cell structure may comprise thermoplastic, thermally set, ethylene ethylene methacrylic acid (E/MAA) copolymer, ethylene methacrylii acid metallate (E/MAA) copolymer, cyano-acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages, urea-formaldehyde resins, vinyl chlorides, and low-density polyethylene (LDPE), polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high-density polytheylenes, Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides, acetal delrin, phenolics, fluoroplastics, polyurethanes, polystyrenes, acrylonitrile-butadiene-styrenes (ABS), Keton PEEK, Tenite resins, oxide ceramic
- Another exemplary embodiment of the present invention includes a battery with at least one cell structure; an insulating layer comprising printed circuitry; at least one embedded conductor inside the insulating layer wherein the conductor acts as a first electric; contact; and a second electrical contact; wherein the insulting layer further comprises at leas one layer; and wherein the cell structure is sandwiched between the insulating layer and the second electrical contact.
- An electrical connection may go over one edge of the insulating layer while creating an electrical contact to both the cell structure and the printed circuitry.
- the insulating layer may also comprise a ceramic or a polymer material.
- FIG. IA shows a top view of an electrochemical device according to an exemplary embodiment of the present invention.
- FIG. IB shows a side view of an electrochemical device according to an exemplary embodiment of the present invention.
- FIG. 2A shows a perspective view of one corner of an electrochemical devi ⁇ with a notch in the electrochemical device according to an exemplary embodiment of the present invention.
- FIG. 2B shows a perspective view of one corner of an electrochemical device with a notch in the encapsulation layer according to an exemplary embodiment of the presen invention.
- FIG. 3 A shows a top view of an electrochemical device with a configuration of holes in the metal encapsulation according to an exemplary embodiment of the present invention.
- FIG. 3B shows a top view of an electrochemical device with another configuration of holes in the metal encapsulation according to an exemplary embodiment of the present invention.
- FIG. 4A shows a top view of an electrochemical device with holes in the contacts according to an exemplary embodiment of the present invention.
- FIG. 4B shows a side view of an electrochemical device with holes in the contacts according to an exemplary embodiment of the present invention.
- FIG. 5A shows a side view of an electrochemical device with an electrochemical device on each side of the metal film encapsulation according to an exemplary embodiment of the present invention.
- FIG. 5B shows a perspective view of an electrochemical device with an electrochemical device on each side of the metal film encapsulation according to an exemplary embodiment of the present invention.
- FIG. 5C shows a perspective view of an electrochemical device with a notch metal film encapsulation between two devices according to an exemplary embodiment of th present invention.
- FIG. 6 shows a plurality of electrochemical devices stacked with metal foil ii between according to an exemplary embodiment of the present invention.
- FIG. 7 shows an electrochemical device with a notch and tab on the side of tl electrochemical device according to an exemplary embodiment of the invention.
- FIG. 8 shows an electrochemical device with a substrate, cathode, electrolyte anode and a metal foil encapsulation according to an exemplary embodiment of the inventio
- FIG. 9A shows the electrochemical device of FIG. 2 A with an insulating laye according to an exemplary embodiment of the invention.
- FIG. 9B shows the electrochemical device of FIG. 2B with an insulating laye according to an exemplary embodiment of the invention.
- FIG. 10 shows two electrochemical devices with three metal foils according t an exemplary embodiment of the invention.
- FIG. 1 IA shows a side view electrochemical device with electrical contacts a an encapsulate and substrate according to an exemplary embodiment of the present inventioi
- FIG. 11 B shows a top view electrochemical device with electrical contacts as an encapsulate and substrate according to an exemplary embodiment of the present inventior
- FIG. 11C shows a top view of the electrochemical device of FIG. 1 IB with partial cuts in the encapsulation according to an exemplary embodiment of the present invention.
- FIG. HD shows a top view of the electrochemical device of FIG. 11C having resulting strips folded over according to an exemplary embodiment of the present invention.
- FIG. 12A shows a side view of a stand alone conductor according to an exemplary embodiment of the present invention.
- FIG. 12B shows top views of stand alone conductors according to an exemplary embodiment of the present invention.
- FIG. 13A shows a side view of a bonding layer with a slit cut therein according to an exemplary embodiment of the present invention.
- FIG. 13B shows a top view of a bonding layer with a slit cut therein according to an exemplary embodiment of the present invention.
- FIG. 14A shows a side view of a conductor woven through a bonding layer according to an exemplary embodiment of the present invention.
- FIG. 14B shows a top view of a mesh wire conductor woven through a bonding layer according to an exemplary embodiment of the present invention.
- FIG. 15A shows a side view of a conductor embedded within a bonding laye according to an exemplary embodiment of the present invention.
- FIG. 15B shows a top view of a mesh wire conductor embedded within a bonding layer according to an exemplary embodiment of the present invention.
- FIG. 16A shows a side view of a first contact layer according to an exemplar embodiment of the present invention.
- FIG. 16B shows a top view of a first contact layer according to an exemplary embodiment of the present invention.
- FIG. 17A shows a side view of a first contact layer bonded with the bonding layer according to an exemplary embodiment of the present invention.
- FIG. 17B shows a top view of a first contact layer bonded with the bonding layer according to an exemplary embodiment of the present invention.
- FIG. 18A shows a side view of a cell structure on a second contact layer according to an exemplary embodiment of the present invention.
- FIG. 18B shows a top view of a cell structure on a second contact layer according to an exemplary embodiment of the present invention.
- FIG. 19A shows a side view of the first contact and bonding layer of FIG. 17, coupled with the cell structure and second contact of FIG. 18A according to an exemplary embodiment of the present invention.
- FIG. 19B shows a top view of the first contact and bonding layer of FIG. 17B coupled with the cell structure and second contact of FIG. 18B according to an exemplary embodiment of the present invention.
- FIG. 2OA shows a side view of a bonding layer according to an exemplary embodiment of the present invention.
- FIG. 2OB shows a side view of a bonding layer according to another exemplary embodiment of the present invention.
- FIG. 2OC shows a side view of a bonding layer according to another exemplary embodiment of the present invention.
- FIG. 2OD shows a side view of a bonding layer according to another exemplary embodiment of the present invention.
- FIG. 2OE shows a side view of a bonding layer according to another exemplary embodiment of the present invention.
- FIG. 21 shows a side view of a bonding layer according to an exemplary embodiment of the present invention.
- FIG. 22 shows a view of a conductor according to an exemplary embodimem of the present invention.
- FIG. 23 A shows a side view of a bonding layer according to an exemplary embodiment of the present invention.
- FIG. 23B shows a side view of a bonding layer according to another exemplary embodiment of the present invention.
- FIG. 24 shows a side view of multiple bonding layers according to an exemplary embodiment of the present invention.
- FIG. 25 shows a side view of an exemplary embodiment of the present invention including an anode.
- a reference to “a step” or “a means” is a reference to one or more steps or means and may include sub-steps and subservient means.
- AU conjunctions used are to be understood in the most inclusive sense possible.
- the word “or” should be understood as having the definition of a logical “or” rather than that of a logical “exclusive or” unless the context clearly necessitates otherwise.
- Structures described herein are to be understood also to refer to functional equivalents of such structures. Language that may be construed to express approximation should be so understood unless tl context clearly dictates otherwise.
- FIG. IA shows a top view of one exemplary embodiment.
- FIG. IB shows a side view of this embodiment. As shown in the figures, this embodiment comprises an electrochemical device 130 and a metal encapsulation layer 110. The electrochemical devic
- the electrochemical device 130 may comprise any number of materials or layers.
- the electrochemical device 130 may also comprise a battery.
- the electrochemical device 130 may comprise an anode, cathode, electrolyte, current collectors, substrate, etc.
- Some materials may, for example, comprise Lithium, LiCoO 2 , LIPON, gold, platinum, stainless steel, titanium, zirconium, cobalt, aluminum, indium, nickel, copper, silver, carbon, bronze, brass, berylliun and/or oxides, nitrides, and alloys thereof.
- the electrochemical device 130 ma] be a thick film device.
- the metal foil may, for example, be less than 100 microns in thickness. In another embodiment the metal foil may be less than 50 microns and in a specific embodimei the metal foil may be less than 25 microns.
- the electrochemical device 130 may comprise at least one notch 131.
- the electrochemical device 130 shown in FIG. IA, IB, 2A and 2B comprises a single notch 131, and the encapsulation layer 110 also includes a notch 111. These notches 111, 131 may be c any shape or size.
- the electrochemical device 130 or the encapsulation layer 110 may comprise any number of notches.
- the metal encapsulation layer 110 extends over the notch
- the electrochemical device 130 may extend under the notch 111 in the metal encapsulation layer 1 K providing a contact tab 132.
- FIG. 2A and FIG. 2B show perspective views of the embodiment shown in FIG. IA and FIG. IB.
- FIG. 2A shows an electrochemical device 130, a metal encapsulating layer 110, a notch 131 in the electrochemical device 130, and a contact tab 112 in the encapsulation layer 110.
- FIG. 2B shows an electrochemical device 130, a metal encapsulating layer 110, a notch 111 in the encapsulation 110 and the contact tab 132 in the electrochemical device 130.
- FIG. 2A shows an electrochemical device 130, a metal encapsulating layer 110, a notch 111 in the encapsulation 110 and the contact tab 132 in the electrochemical device 130.
- the metal foil layer 110 may be adapted to encapsulate the electrochemical device 130. This encapsulation may, for example, protect the electrochemical device 130 from damaging environmental effects. For example, many electrochemical devices compris environmentally sensitive materials such as Lithium. These materials can be extremely reactive with air and moisture, and may degrade when exposed to such environments. Accordingly, the metal foil encapsulate layer 110 may protect environmentally sensitive materials in the electrochemical device from air and/or moisture.
- the metal foil encapsulate layer 110 in an exemplary embodiment of the present invention may lie over a substrate layer in the electrochemical device 130.
- An electrochemical device may include a number of layers, for example, a substrate, cathode, electrolyte, and anode. Such a device may be encapsulated with a metal foil deposed on the substrate, and may also include contact tabs.
- the metal foil therefore, may provide contacts that are secure, durable and may be incorporated at any location in the device. Because the contacts are part of the metal foil, they are less likely to break or shear from the substrate.
- the metal foil layer in an exemplary embodiment of the present invention, may comprise the cathode. [0083] FIG. 3 A and FIG.
- the metal foil encapsulation 110 comprises openings 150.
- These openings 150 may, for example, provide contact or access to layers in the electrochemical device.
- these openings 150 may provide direct access to the substrate in the electrochemical device.
- These openings 150 may be of any size or configuration. Shown in the figures are exemplary circle and oval openings. Depending on the application a plurality of openings may be required or a single opening may suffice.
- FIG. 9A shows the embodiment of FIG. 2A with an insulating layer 180 on t metal foil 110 and FIG. 9B shows the embodiment of FIG. 2B with an insulating layer 180 i the metal foil 110.
- the insulating layer 180 protects the metal foil 110 from unwanted electrical contacts.
- the tab 112, 132 portions are the only portion that are not covered with the insulating layer 180 allowing electrical contact only on the tabs 112, 132.
- FIG. 4A and FIG. 4B show an exemplary embodiment of the present invention.
- This embodiment comprises a hole 126 in the contact tab 132 and a hole 125 in the encapsulate tab 112. Accordingly, these holes 125, 126 may, for example, provide a mo secure contact point. Other devices may grip the contact through holes 125, 126.
- FIG. 5 A, FIG. 5B, and FIG. 5C show an exemplary embodiment of the prese invention.
- This embodiment comprises two electrochemical devices 130, 160 with a single metal foil encapsulation layer 110 between the two devices.
- the metal foil 110 may comprise the cathode for both electrochemical devices 130 160.
- the metal foil 110 may be electrically conductive to the substrate of the electrochemical devices 130, 160.
- This embodiment may also includedt an encapsulation layer 161 on the top of electrochemical device 160 as shown in FIG. 5B.
- a third metal foil 134 is also included.
- FIG. 5B is a perspective view of the right side of FIG. 5A with a second encapsulation layer 161. As shown the two electrochemical devices 130, 160 have notches 131, 141 and there is an extending tab 112 in the encapsulate layers 110, 113.
- FIG. 5C is a perspective view of the left side of FIG. 5A and shows a notch 111 in the encapsulate 110 and tabs in both electrochemical devices.
- FIG. 6 shows a plurality of electrochemical devices 130, 160, 170, 180 stacks one upon another with metal foil layers 110, 161, 171 between and a metal encapsulate 181 on the top.
- this figure shows four electrochemical devices 130, 160, 170, 180, the invention is not limited by the number of devices that may be stacked. Any number of devices may be stacked without deviating from the invention.
- This embodiment also shows four tabs 112, 122, 173, 183 in the encapsulation layers.
- FIG. 7 shows an exemplary embodiment of the present invention.
- an electrochemical device 130 has a notch 131 and a tab 132.
- an encapsulation layer 110 On the bottom o the electrochemical device 130 is an encapsulation layer 110, which includes a tab 112 and notch 111.
- the notches 111, 131 are circular and placed on the same side of the device.
- FIG. 8 shows a embodiment similar to that shown in FIG. 7 with circular notches in both the encapsulate 110 and the electrochemical cell 130.
- This exemplary embodiment shows a second electrochemical device 160 and a second encapsulation layer 161.
- a metal foil may lay over an electrochemical device. This metal foil encapsulates the electrochemical device an ⁇ protects it from environmental harm. The metal foil also provides tabs that are conductivel] contacted with the substrate of the device.
- the electrochemical device comprises LiCoO 2 .
- the device is treated with a rapid thermal anneal. For example, the device is brought up to approximately 700° C over a period of six minutes. The device is then held at this temperature for approximately five minutes and the quickly cooled to room temperature in about six minutes. This rapid thermal annealing crystallizes the LiCoO 2 so that it may be used without a barrier layer. The period of time may vary up to 30 minutes or even down to 10 seconds.
- FIG. 1 IA shows a side view of an electrochemical device according to an exemplary embodiment of the present invention.
- a first contact 1101 is coupled with bonding layer 1110 with a portion of the first contact 1101 extending past the bonding layer 1110.
- the bonding layer 1110 may also be bonded with the cell structure 1115.
- a second contact 1105 is placed under the cell structure 1115.
- a barrier layer for example, may also be placed between the second contact 1105 and the cell structure 1115.
- Shown embedded within the bonding layer 1110 is conductor 1120. This conductor 1120, f example, creates a selectively conductive bonding layer.
- a selectively conductive bonding layer 1110 permits conduction from the cell structure 1115 through the bonding layer 1110 1 the first contact 1101 at specific points, and yet provides insulation between the first contad 1101 and the second contact 1105.
- the conductor 1120 may be placed within the bonding layer 1110 in many different ways. For example, a metal tab, a metal wire, multiple metal wires, a metal wire mesh, perforated metal foil, perforated metal, a metal coating applied to the adhesive layer, , metallic disk, a metallically coated fiberglass or combinations thereof may be used. In each of these examples, the conductor 1120 can provide electrical conduction between the cell structure 1115 and the first contact 1101 and yet provide insulation between the two contact 1101, 1105. In some embodiments the conductor 1120 may be woven within the bonding layer 1110. The conductor 1115 may be, for example, disks embedded within the bonding layer 1110.
- slits within the bonding layer 1110 may be made in ordei to weave or place the conductor 1120 through the bonding layer 1110. Also, for example, holes or other means may be used to place the conductor 1120 through the bonding layer 1110.
- a reinforcement layer may be placed within thi insulating layer.
- a fiberglass material may cover half of one surface of the insulating layer, woven through the layer and then cover the other half of the bonding layer.
- Such a layer of fiberglass without a conductive coating would insulate the materials placed between.
- the fiberglass may be coated in a localized area with a conductive material.
- Such conductive coatings can coat the fiberglass area at the top and bottom surface of the bonding layer.
- the fiberglass would conduct between the uppe] contact and the cell.
- Conductive material may be disposed on the fiberglass using ink jet, si screen, plasma deposition, e-beam deposition, spray and/or brush methods. Other materials may be used rather than fiberglass, such as, for example, KEVLAR®, plastic, glass or other insulating materials.
- An exemplary embodiment of the present invention provides for selective contact between the first contact and the cell structure through holes in the bonding layer.
- holes in the bonding layer may allow the first contact and cell structur to remain in contact.
- the layers may be, for example, pressed together to create a contact.
- conductive glues or inks may be applied in or near the hole area in the bondin layer to make the contact between the layers.
- Lithium may also be used as a conductive material.
- the conductor 1120 may be made of gold, platinum, stainless steel, titanium, zirconium, cobalt, aluminum, indium, nickel, copper, silver, carbon, bronze, brass, beryllium, or oxides, nitrides, and alloys thereof.
- FIG. 1 IB shows a top view of the exemplary embodiment shown in FIG. 11/
- the first contact 1101 extends past the bonding layer 1110 and the second contact 1105.
- the second contact 1105 also extends past the boding layer 1115 and the first contact 1101 in the opposite direction.
- FIGS. 11C and 1 ID show an exemplary embodiment in which leads are formed from the first and second contacts 1101, 1105.
- a first partial cut 1140a is made in the first contact 1101 and a partial cut 1140b is made in the second contact 1105.
- These partial cuts form strips that may be folded over to extend from the electrochemical device.
- Figure 1 ID shows an example in which strips 1142a and 1142b resulting from the partial cuts in the contacts 1101, 1105 are folded in a downwa direction of the drawing. It should be appreciated that only one or both of the extending par of the contacts 1101, 1105 can be partially cut to form leads in a variety of ways for a desire application or orientation of the electrochemical device.
- FIGS. 12A - 19B show individual layers and parts of this embodiment and how they can be coupled or bonded together. These figures are not meant to show a step-by-step process for manufacturing any embodiments of the invention. Rather, these figures are presented to help understand how the layers interact.
- FIGS. 12A, 13 A, 14A, 15 A, 16A, HA 18A and 19A show side views of various parts of an exemplary battery
- FIGS. 12B, 131 14B, 15B, 16B, 17B, 18B and 19B show top views.
- FIG. 12A shows a side view of a conductor 1120 according to one embodiment of the present invention.
- the top view of three exemplary types of conductors, wire 1121, a tab 1122, and a wire mesh 1123, are shown in FIG. 12B.
- FIG. 13A shows a sid view and
- FIG. 13B shows a top view of a slit 1130 cut within a bonding layer 1110.
- FIG. 14A shows a side view of a conductor 1120, for example, woven through the bonding layer.
- FIG. 14B shows a top view of a mesh wire conductor 1123 woven through the bonding layei 1110.
- FIG. 15A shows the conductor 1120 embedded within the bonding layer.
- the conductor 1120 may be embedded within the bonding layer 1110, for example, by heating th bonding layer 1110 to the point where the conductor 1120 may be pressed within the bondin layer 1110.
- the surfaces of the conductor 1120 and bonding layer 1110 may preferably be flush after this process.
- FIG. 15B shows a top view of a wire mesh conductor 1123 embedded within the bonding layer.
- FIGS. 12A-15B show a bonding layer with insulating properties yet provides selective conductivity between the portions of the top surface and the lower surface of the bonding layer 1120. Other combination may also produce selective conductivity.
- FIG. 16A and FIG. 16B show a first contact 1101.
- FIG. 17A shows the first contact 1101 bonded with the bonding layer 1110.
- the conductor 1120 preferably makes electrical contact with the first electrical contact 1101.
- Figure 17B shows the top view of FIG. 17A.
- the first contact may also encapsulate the battery thereby protecting it from environmental degradation and damage.
- the first contact 1101 may encapsulate the battery to protect it from environmentally sensitive materials in the electrochemical device from air and/or moisture.
- FIG. 18A shows an exemplary embodiment of a single battery cell 1115 coupled with a second contact 1105.
- the second contact 1105 may also be the substrate upc which the cell is deposited.
- the cell structure in this embodiment comprises a cathode, and anode and an electrolyte.
- the electrolyte may include LIPON.
- FIG. 19A shows a completed cell structure.
- the second contact 1105 and the cell structure 1115 from FIG. 18A are coupled with the first contact 1101 and the bonding layer 1110 as shown in 17A.
- the conductor 1120 is preferably in electrical contact with the electrochemical device 1115 in a selective area.
- the cell is bounded by external contacts 1101 and 1105 with minimal layers there between. In this embodiment the first and second contacts 1101 and 1105 extend beyond the area of the electrochemical devi ⁇ 1115.
- the first and second contacts 1101, 1105 of this embodiment can be made of conductive metal.
- the contact or contacts may be made of gold, platinum, stainless steel, titanium, zirconium, cobalt, aluminum, indium, nickel, copper, silver, carbon bronze, brass, beryllium, or oxides, nitrides, and alloys thereof. Other conductive materials may also be used.
- electrical contact between the cell structure 1115 and first electrical contact 1101 may be provided by a number of other ways.
- electrical conduction between the cell structure 1115 and the first contact 1101 may be provided by embedding a conductive powder within an adhesive forming the bonding layer 1110.
- a conductive powder such as a metallic powder (e.g., nickel powder) can be embedded in an adhesive bonding layer 1110 at one or more selected areas within an adhesive bonding layer 1110 and between the contact 1101 and the cell structure 1115.
- FIG. 20A shows a side view of a bonding layer according to an exemplary embodiment of the present invention.
- the bonding layer 1110 can be a composite of two layers: the upper layer 111OA being in contact with the first contact 1101 and the lower layer 111OB being in contact with the cell structure 1115.
- the lower layer 111OB may have chemical compatibility, chemical stability, chemical resistance, chemical non-reactivity, and chemical robustness with the cell structure 1115.
- the top layer 111OA may have a melting point preferably higher than 100 0 C and pressure resilience against at lee 10 psi so that the composite bonding layer has an enhanced heat and pressure resiliency compared to the bonding layer 1110.
- the conductor 1120 may be embedded through both the layers of 111OA and 111OB.
- the lower layer 111OB can be, for example, a copolymer, which may be a thermoplastic or thermally set.
- the lower layer 111OB can be an ethylene methacrylic acid (E/MAA) copolymer.
- the lower layer 111OB can be an ethylene methacrylic acid (E/MAA) copolymer, in which part of the methacrylic acid is neutralized with metal ions such as zinc (Zn) or sodium (Na).
- the lower layer 111OB may comprise at least one polymer type selected from the group of cyano-acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkage! urea-formaldehyde resins, vinyl chlorides, and low-density polyethylene (LDPE).
- LCPE low-density polyethylene
- the upper layer 111OA can comprise at least one polymer type selected from the group of polyamides (e.g., Nylon), polyimides (e.g., Kapton), polyethylene terephthalates (e.g., Mylar), para-aramids (e.g., Kevlar), polyethylenes, high-density polyethylenes (e.g., Valeron), Ultra High Molecular Weight
- polyamides e.g., Nylon
- polyimides e.g., Kapton
- polyethylene terephthalates e.g., Mylar
- para-aramids e.g., Kevlar
- polyethylenes e.g., high-density polyethylenes (e.g., Valeron), Ultra High Molecular Weight
- UHMW polyethylenes polypropylenes, acrylics, polycarbonates, polyvinyl chlorides (PVi and CPVC), Acetal Delrin, phenolics, fluoroplastics (e.g., Teflon), polyurethanes, polystyrenes (e.g., acrylonitrile-butadiene-styrenes [ABS]), Keton PEEK, Tenite resins (e.g. Butyrate), silicate or non-silicate based glass, fiberglass, oxide ceramic (e.g., ZrO 2 ), nitride ceramic (e.g., AlN), carbide ceramic (e.g., SiC), or a combination/modification thereof.
- oxide ceramic e.g., ZrO 2
- nitride ceramic e.g., AlN
- carbide ceramic e.g., SiC
- FIG. 2OB shows a side view of a bonding layer according to another exemplary embodiment of the present invention.
- the bondin layer 1110 may have three layers: the topmost layer 111OD being in contact with the first contact 1101 and the lowest layer 111OF being in contact with the cell structure 1115.
- the middle layer 111OE may be m contact with the layers 111OD and 111OF, but 111OE may no contact with 1101 and 1115
- the topmost layer 111OD may have chemical compatibility, chemical stability, chemical resistance, chemical non-reactivity, and chemical robustness with the first contact 1101
- the lowest layer 111OF may have chemical compatibility, chemical stability, chemical resistance, chemical non-reactivity, and chemical robustness with the cell structure 1115
- the middle layer 111OE, the so-termed heat and pressure resilient layer (HAPR layer) may have a melting pomt preferably higher than 100 0 C and a pressure resilience against at least 10 psi, so that the composite bonding layer may possess E enhanced heat and pressure resiliency [0113] FIG.
- FIG. 2OC shows a side view of a bonding layer according to another exemplary embodiment of the present invention
- an adhesic layer 111OG can be added m between layers 111OD and 111OE.
- FIG. 2OD show a side view of another exemplary embodiment in which bondmg layer 1110 may comp ⁇ se an adhesion layer 111OH in between 111OF and 111OE.
- the topmost layer 111OD can be, foi example, a copolymer, an ethylene methacrylic acid (E/MAA) copolymer, or an ethylene methacrylic acid (E/MAA) copolymer, in which part of the methacrylic acid is neutralized with metal ions such as zmc (Zn) or sodium (Na).
- tl topmost layer 111OD may comp ⁇ se at least one polymer type selected from the group of cyano-acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages, urea- formaldehyde resins, vinyl chlo ⁇ des, and low-density polyethylene (LDPE)
- the HAPR layer 111OE may comp ⁇ se at least one polymer type selected from the group of polyamides (e g , Nylon), polyimides (e g., Kapton), polyethylene terephthalates (e g , Mylar), para-aramids (e g , Kevlar), polyethylenes, high-density polyethylenes (e g , Valeron), Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlo ⁇ des (PVC and CPVC), Acetal Del ⁇ n, phenohcs, fluoroplastics (e.g , Teflon), polyurethanes, polystyrenes (e.g., acrylomt ⁇ le-butadiene-styrenes [ABS]), Keton PEEK, Tenite resins (e.g., Butyrate), oxide ceramic, polyamides (e g , Nylon),
- the lowest layer 111OF may be, for example, a copolymer, an ethylene methacrylic acid (E/MAA) copolymer, or an ethylene methacrylic acid (E/MAA) copolymer, in which part of the methacrylic acid may be neutralized with metal ions such as zinc (Zn) or sodium (Na).
- the lowest layer 111OF may comprise at least one polymer type selected from the group of cyano-acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages urea-formaldehyde resins, vinyl chlorides, and low-density polyethylene (LDPE).
- the conductor 1120 may, for example, comprise at least one element selected from the group of Li, B, graphitic carbon, A Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, m, Sn, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, and any alloy thereof, including stainless steel, and is made by rolling, electroforming, drawing or any other materials processing technique or any vacuum deposition technique, such as sputtering, evaporation or CVD, or an electrochemical process (e.g., electroplating or electroless plating).
- FIG. 21 shows a side view of a bonding layer according to an exemplary embodiment of the present invention.
- the bonding layer 111 may be, partly or completely, an isotropic or anisotropic adhesive layer 11101 comprising at least one adhesive selected from the group of ethylene methacrylic acid (E/MAA) copolymei ethylene methacrylic acid metallate (E/MAA) copolymer, cyano-acrylates, epoxies, fluoro- acrylates, polyimides containing ether linkages, urea-formaldehyde resins, vinyl chlorides, and low-density polyethylene (LDPE) that may contain gold-coated polymer spheres, solder- type alloys, or solid metal powders such as carbon, Ni, Au, Cu, or Ag.
- E/MAA ethylene methacrylic acid
- E/MAA ethylene methacrylic acid copolymei ethylene methacrylic acid metallate copolymer
- cyano-acrylates
- the adhesive materia could be thermally set (for strong and reliable bonding) or thermoplastic (to facilitate the rework process).
- the isotropic or anisotropic adhesive may replace the conductor 1120, at least one of the layers from the group of 111OA, 111OB, 111OD, 111OE, 111OF, 111OG, and 111OH, or both.
- FIG. 22 shows a view of a conductor according to an exemplary embodiment of the present invention.
- the conductor 1120 may have (one, two, three or many) conducting strips (1120A and 1120B, for example) attached.
- the strips (1120A, and 1120B) may be made by rolling, electroforming, drawing or any other materials processing technique, or any vacuum deposition technique, such as sputtering, evaporation oi CVD, or an electrochemical process (e.g., electroplating or electroless plating).
- the strip-forming process may involve a deposition mask.
- the stri] material can be chosen such that it could form a good metallurgical bond with the anode material (e.g., Li).
- the metallurgical bond may either be created via a solid solution or through an alloy compound, hi another exemplary embodiment, the strip may be made of metal, such as Li, B, graphitic carbon, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, and any alloy thereof, including stainless steel, wherein Li, Ni or Cu are, for example, the most preferred material selections.
- metal such as Li, B, graphitic carbon, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, and any alloy thereof, including stainless steel, wherein Li, Ni or Cu are, for example, the most preferred
- the strips (1120A and 1120B) may be bent at an angle of a few degrees (for example, 5 degrees) to, for example, 90 degrees with respect to the longest dimension of the conductor 1120.
- the strip 1120A for example, is bent to form a 90 degree angle 2202A with respect to the longest dimension of the conductor 1120.
- the strip 1120B for example, is bent to form a 5 degree angle 2202B with respect to the longest dimension of the conductor 1120.
- the length and width of the strips may range from several micrometers to tens of millimeters.
- the thicknes may range from l/100 th of a micrometer up to tens of micrometers.
- the strips are 3 mm long, 0.3 mm wide and 0.01 mm thick.
- FIG. 25 shows a side view of an exemplary embodiment of the present invention including an anode.
- a protection layer 600A can t deposited on the anode 600.
- the protection layer 600A may provide electrical contact from the anode 600 to the outside terminal 800 and at the same time provides environmental protection from exposure to moisture, oxygen and environmental species.
- the protection layer 600A can be made of an oxide, nitride, carbide or carbonate.
- the protection layer 600A may be made of a metal that is vapor-deposited (CVD or PVD) with the help of a shadow mask, hi yet anothe exemplary embodiment, the protection layer 600A may be made of Ni or Cu.
- FIG. 23 A shows a side view of a bonding layer according to an exemplary embodiment of the present invention.
- the first contact 1101 can be, for example, a non-conducting, insulating, or semiconducting layer.
- An opening 2301 may be created (either by mechanical means or masking during formation of the layer) in the non-conducting, insulating, or semiconducting layer 1101 so that the conductor 1120 could be used to contact the cell structure 1115 for termination purposes.
- a conducting inse e.g., a metal or an isotropic/anisotropic conducting adhesive
- the non-conducting, insulating, or semiconducting layer 1101 may be a ceramic selected from the group comprising BeO, B 2 O 3 , BN, borate glass, AI 2 O 3 , AlN, SiO 2 , S1 3 N 4 , silicate glass, ScO x , TiO x , VO x , CrO x , FeO x , YO x , ZrO x , NbO x , MoO x , HfO x , TaO x , WO x , a nitride ceramic, a carbide ceramic, or a combination thereof.
- the non-conducting layer 110 may also comprise at least one polymer type selected from the group of polyamides (e.g., Nylon), polyimides (e.g., Kapton), polyethylene terephthalates (e.g., Mylar), para-aramids (e.g., Kevlar), polyethylenes, high-density polyethylenes (e.g., Valeron), Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides (PVC and CPVC), Acetal Delrin, phenolics, fluoroplastics (e.g., Teflon) polyurethanes, polystyrenes (e.g., acrylonitrile-butadiene-styrenes [ABS]), Keton PEEK, Tenite resins (e.g., Butyrate) or a combination/modification thereof.
- the semiconducting layer 1101 may be Si, Ge,
- the non-conducting layer 1101 may also have printed circuitry 2305 and the cell structure 1115 may be connected into the circuitry 2305 through an opening 2301 through the non-conducting layer 1101 either through the conduct! 1120 or by the use of an isotropic or anisotropic conducting adhesive.
- the opening may be created either by mechanical means or masking/etching.
- the non-conducting layer 1101 may be equipped with at least one electrical connection layer that goes over at least one edge of the non-conducting layer 1101 and mak ⁇ electrical contact with both the cell structure 1115 and the printed circuitry 2305 which are sandwiching the non-conducting layer 1101.
- the electrical connection layer may comprise conducting medium comprising Li, B, graphitic carbon, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, N Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, and any alloy thereof, including stainless steel, wherein Ni or Cu are the most preferred material selection;
- the non-conducting layer 1101 may provide another protective metallic layer, with or without a bonding layer in between the non-conducting and protective layers.
- the bonding layer may comprise at least one polymer type selected from the group of ethylene methacryl acid (E/MAA) copolymer, ethylene methacrylic acid metallate (E/MAA) copolymer, cyano- acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages, urea-formaldehyd resins, vinyl chlorides, and low-density polyethylene (LDPE).
- E/MAA ethylene methacryl acid
- E/MAA ethylene methacrylic acid metallate copolymer
- cyano- acrylates epoxies
- fluoro-acrylates fluoro-acrylates
- polyimides containing ether linkages urea-formaldehyd resins
- vinyl chlorides vinyl chlorides
- LDPE low-density polyethylene
- a reinforcement structure (a two-layer, three-layer, four-layer, or five layer structure, as illustrated above) may be used in place of the bonding layer.
- FIG. 23B shows a side view of a bonding layer according to an exemplary embodiment of the present invention.
- the second contact 1105 is a non-conducting layer.
- An opening 2302 may be created, either by mechanical means or masking during formation of the layer, in the non-conducting layer 1105 so that a conductor 1190 (hole-filling metallic column of Au, for instance) could be used to contact ti cell structure 1115 for termination purposes.
- a conducting insert e.g., a metal or an isotropic/anisotropic conducting adhesive
- the non- conducting layer 1105 may be a ceramic selected from the group comprising BeO, B 2 O 3 , Bl borate glass, Al 2 O 3 , AlN, SiO 2 , Si 3 N 4 , silicate glass, ScO x , TiO x , VO x , CrO x , FeO x , YO x , ZrO x , NbO x , MoO x , HfO x , TaO X; WO x , or a combination thereof.
- the bonding layer 1110 may be used as a heat and pressure resilient layer, without any further reinforcements, because the non-conducting layer 1105 does not cause any electrical shorting to the first contact 1101 when the bonding layer is damaged.
- the first contact 1101 may be eliminated for this invention.
- tl conductor 1120 could be used for electrically contacting the cell structure 1115 for termination purposes.
- FIG. 24 shows a side view of an exemplary embodiment according tc the current invention, in which the first contact 1101 of a first thin-film battery may be replaced by a second thin-film battery, which has all of the layers in Fig 11A (I lOl 1 , 1110D 1 111OG', 111OE', 111OF', 111OH', 1115', and 1105'), that is head-on attached to the bonding layer 1110 of the first thin-film battery.
- the said head-on attached second thin-film battery may not necessarily possess all of the layers shown in FIG. 1 IA and may have an ⁇ of the layers 1101, 1110, and 1120 missing.
- two thin-film batteries may be attached to each other via one or multiple bonding layer(s) as detailed above. It is this head- on second thin-film battery that may serve as the heat-and-pressure resilient encapsulation t( the first thin-film battery.
- the first contact 1101 may be covered by an electrically insulating and mechanically robust film comprising Lipon, borides, carbides, nitrides, oxides, polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high-density polytheylenes, Ultra High Molecular Weight (UHMW) polyethylenes, polypropylenes, acrylics, polycarbonates, polyvinyl chlorides, acetal delrin, phenolics, fluoroplastics, polyurethanes, polystyrenes, acrylonitrile-butadiene-styrenes (ABS), Keton PEEK, and/or Tenite resins.
- an electrically insulating and mechanically robust film comprising Lipon, borides, carbides, nitrides, oxides, polyamides, polyimides, polyethylene terephthalates, para-aramids, polyethylenes, high-density polytheylenes, Ultra High Molecular Weight (
- the borides, carbides, nitrides, and/or oxides may be configured with boron, aluminum, silicon, Ti, Ta, Zr, Hf or a similar element, or a modification/combination thereo
- the insulating film may mechanically and electrically protect the first contact 1101 from damages.
- a recess may be created, by a shadow mask during or after the formation of the insulation film, in the first contact 1101 in order for it to make contact with the conductor 1120.
- another conductor may also be used in the central portion for contacting the conductor 1120.
- an isotropic ⁇ anisotropic conducting adhesive may be used in the central portion for contacting the conductor 1120 for termination purposes.
- the isotropic or anisotropic adhesive may comprise at least one adhesive selected from the group of ethylene methacrylic acid
- E/MAA copolymer ethylene methacrylic acid metallate (E/MAA) copolymer, cyano- acrylates, epoxies, fluoro-acrylates, polyimides containing ether linkages, urea-formaldehyd resins, vinyl chlorides, and low-density polyethylene (LDPE) that contains gold-coated polymer spheres, solder-type alloys, or solid metal powders such as carbon, Ni, Au, Cu, or Ag.
- LDPE low-density polyethylene
- the conductor 1120 may not be a necessary component of the current invention.
- the contact between the first contact 1101 and the cell structure 1115 can be made by applying pressure by a mandrel in the central portion of the first contact 1101 so thi a depression is created in the first contact 1101 thereby creating an electrical contact.
- the bonding layer 1110 can be removed before creating the depression of 1101 by the mandrel si as to create a more robust electrical contact between the first contact and the cell structure.
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Abstract
Description
Claims
Priority Applications (4)
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KR1020107026825A KR101522064B1 (en) | 2008-04-29 | 2009-04-24 | Robust metal film encapsulation |
JP2011507550A JP6063625B2 (en) | 2008-04-29 | 2009-04-24 | Robust metal membrane encapsulation |
EP09739491.0A EP2272120B1 (en) | 2008-04-29 | 2009-04-24 | Robust metal film encapsulation |
CN200980124956.XA CN102067356B (en) | 2008-04-29 | 2009-04-24 | Firm metal film is coated |
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US12/111,388 US8394522B2 (en) | 2002-08-09 | 2008-04-29 | Robust metal film encapsulation |
US12/111,388 | 2008-04-29 |
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US (1) | US8394522B2 (en) |
EP (1) | EP2272120B1 (en) |
JP (2) | JP6063625B2 (en) |
KR (1) | KR101522064B1 (en) |
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Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8431264B2 (en) | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8535396B2 (en) | 2002-08-09 | 2013-09-17 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8404376B2 (en) | 2002-08-09 | 2013-03-26 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
US8636876B2 (en) | 2004-12-08 | 2014-01-28 | R. Ernest Demaray | Deposition of LiCoO2 |
US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
US8062708B2 (en) | 2006-09-29 | 2011-11-22 | Infinite Power Solutions, Inc. | Masking of and material constraint for depositing battery layers on flexible substrates |
US8197781B2 (en) | 2006-11-07 | 2012-06-12 | Infinite Power Solutions, Inc. | Sputtering target of Li3PO4 and method for producing same |
US9334557B2 (en) | 2007-12-21 | 2016-05-10 | Sapurast Research Llc | Method for sputter targets for electrolyte films |
US8268488B2 (en) * | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
JP5705549B2 (en) | 2008-01-11 | 2015-04-22 | インフィニット パワー ソリューションズ, インコーポレイテッド | Thin film encapsulation for thin film batteries and other devices |
CN101983469B (en) | 2008-04-02 | 2014-06-04 | 无穷动力解决方案股份有限公司 | Passive over/under voltage control and protection for energy storage devices associated with energy harvesting |
EP2319101B1 (en) | 2008-08-11 | 2015-11-04 | Sapurast Research LLC | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof |
JP5650646B2 (en) | 2008-09-12 | 2015-01-07 | インフィニット パワー ソリューションズ, インコーポレイテッド | Energy device with integral conductive surface for data communication via electromagnetic energy and method for data communication via electromagnetic energy |
US8508193B2 (en) | 2008-10-08 | 2013-08-13 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
KR20110082035A (en) * | 2008-10-08 | 2011-07-15 | 인피니트 파워 솔루션스, 인크. | Foot-powered footwear-embedded sensor-transceiver |
EP2474056B1 (en) * | 2009-09-01 | 2016-05-04 | Sapurast Research LLC | Printed circuit board with integrated thin film battery |
CA2787431C (en) * | 2009-10-14 | 2015-12-01 | Micro Power Electronics, Inc. | Temporary insulator for battery packs and associated systems and methods |
US20110300432A1 (en) | 2010-06-07 | 2011-12-08 | Snyder Shawn W | Rechargeable, High-Density Electrochemical Device |
FR2975229B1 (en) | 2011-05-13 | 2013-07-05 | Commissariat Energie Atomique | STACKING ARCHITECTURE AND / OR ELECTRIC POWER GENERATING ELEMENT WITH CONFIGURABLE ELECTRICAL OUTPUT, METHOD OF MAKING SUCH A ARCHITECTURE |
FR2980305A1 (en) | 2011-09-19 | 2013-03-22 | St Microelectronics Tours Sas | METHOD FOR ENCAPSULATING AN ELECTRIC ENERGY ACCUMULATION MEMBER AND BATTERY |
DE102014117640A1 (en) * | 2014-12-01 | 2016-06-02 | Schott Ag | Electrical storage system with disc discrete element, discrete element, process for its manufacture and its use |
US10660208B2 (en) | 2016-07-13 | 2020-05-19 | General Electric Company | Embedded dry film battery module and method of manufacturing thereof |
EP3276700B1 (en) * | 2016-07-26 | 2023-03-01 | VARTA Microbattery GmbH | Electrochemical cell |
US11101513B2 (en) | 2018-09-04 | 2021-08-24 | International Business Machines Corporation | Thin film battery packaging |
CN112510295A (en) * | 2020-11-30 | 2021-03-16 | 南通路远科技信息有限公司 | Battery with polymer shell |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001033651A1 (en) | 1999-11-01 | 2001-05-10 | Polyplus Battery Company | Layered arrangements of lithium electrodes |
US20070202395A1 (en) | 2002-08-09 | 2007-08-30 | Infinite Power Solutions | Metal film encapsulation |
Family Cites Families (721)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US712316A (en) | 1899-10-26 | 1902-10-28 | Francois Loppe | Electric accumulator. |
US1712316A (en) | 1925-12-16 | 1929-05-07 | Henry L F Trebert | Hydraulic brake |
US2970180A (en) * | 1959-06-17 | 1961-01-31 | Union Carbide Corp | Alkaline deferred action cell |
US3309302A (en) | 1963-10-07 | 1967-03-14 | Varian Associates | Method of preparing an electron tube including sputtering a suboxide of titanium on dielectric components thereof |
US3616403A (en) | 1968-10-25 | 1971-10-26 | Ibm | Prevention of inversion of p-type semiconductor material during rf sputtering of quartz |
US3790432A (en) | 1971-12-30 | 1974-02-05 | Nasa | Reinforced polyquinoxaline gasket and method of preparing the same |
US3797091A (en) | 1972-05-15 | 1974-03-19 | Du Pont | Terminal applicator |
US3850604A (en) | 1972-12-11 | 1974-11-26 | Gte Laboratories Inc | Preparation of chalcogenide glass sputtering targets |
US4111523A (en) | 1973-07-23 | 1978-09-05 | Bell Telephone Laboratories, Incorporated | Thin film optical waveguide |
US3939008A (en) | 1975-02-10 | 1976-02-17 | Exxon Research And Engineering Company | Use of perovskites and perovskite-related compounds as battery cathodes |
US4127424A (en) | 1976-12-06 | 1978-11-28 | Ses, Incorporated | Photovoltaic cell array |
US4082569A (en) | 1977-02-22 | 1978-04-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Solar cell collector |
DE2849294C3 (en) | 1977-11-22 | 1982-03-04 | Asahi Kasei Kogyo K.K., Osaka | Thin metal halide cell and process for its manufacture |
IE49121B1 (en) | 1978-12-11 | 1985-08-07 | Triplex Safety Glass Co | Producing glass sheets of required curved shape |
US4318938A (en) | 1979-05-29 | 1982-03-09 | The University Of Delaware | Method for the continuous manufacture of thin film solar cells |
US4395713A (en) | 1980-05-06 | 1983-07-26 | Antenna, Incorporated | Transit antenna |
US4442144A (en) | 1980-11-17 | 1984-04-10 | International Business Machines Corporation | Method for forming a coating on a substrate |
US4467236A (en) | 1981-01-05 | 1984-08-21 | Piezo Electric Products, Inc. | Piezoelectric acousto-electric generator |
US4328297A (en) | 1981-03-27 | 1982-05-04 | Yardngy Electric Corporation | Electrode |
US5055704A (en) | 1984-07-23 | 1991-10-08 | Sgs-Thomson Microelectronics, Inc. | Integrated circuit package with battery housing |
US4756717A (en) | 1981-08-24 | 1988-07-12 | Polaroid Corporation | Laminar batteries and methods of making the same |
US4664993A (en) | 1981-08-24 | 1987-05-12 | Polaroid Corporation | Laminar batteries and methods of making the same |
JPS58216476A (en) | 1982-06-11 | 1983-12-16 | Hitachi Ltd | Photoelectric-generating storage device |
JPS5950027A (en) | 1982-09-13 | 1984-03-22 | Hitachi Ltd | Thin titanium disulfide film and its formation |
US4518661A (en) | 1982-09-28 | 1985-05-21 | Rippere Ralph E | Consolidation of wires by chemical deposition and products resulting therefrom |
US4437966A (en) | 1982-09-30 | 1984-03-20 | Gte Products Corporation | Sputtering cathode apparatus |
JPS59217964A (en) | 1983-05-26 | 1984-12-08 | Hitachi Ltd | Positive electrode of thin film battery |
JPS59226472A (en) * | 1983-06-06 | 1984-12-19 | Hitachi Ltd | Thin film lithium battery |
JPS59227090A (en) | 1983-06-06 | 1984-12-20 | Hitachi Ltd | Nonvolatile memory device |
DE3345659A1 (en) | 1983-06-16 | 1984-12-20 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | ZIRCONIUM DIOXIDE CERAMIC BODY (ZRO (DOWN ARROW) 2 (DOWN ARROW)) AND METHOD FOR PRODUCING THE SAME |
AU573631B2 (en) | 1983-10-17 | 1988-06-16 | Tosoh Corporation | High strength zirconia type sintered body |
DE3417732A1 (en) | 1984-05-12 | 1986-07-10 | Leybold-Heraeus GmbH, 5000 Köln | METHOD FOR APPLYING SILICON-CONTAINING LAYERS TO SUBSTRATES BY CATODIZING AND SPRAYING CATODE FOR CARRYING OUT THE METHOD |
GB8414878D0 (en) | 1984-06-11 | 1984-07-18 | Gen Electric Co Plc | Integrated optical waveguides |
JPH06101335B2 (en) | 1984-11-26 | 1994-12-12 | 株式会社日立製作所 | All-solid-state lithium battery |
US4785459A (en) | 1985-05-01 | 1988-11-15 | Baer Thomas M | High efficiency mode matched solid state laser with transverse pumping |
US4710940A (en) | 1985-10-01 | 1987-12-01 | California Institute Of Technology | Method and apparatus for efficient operation of optically pumped laser |
US5173271A (en) | 1985-12-04 | 1992-12-22 | Massachusetts Institute Of Technology | Enhanced radiative zone-melting recrystallization method and apparatus |
US5296089A (en) | 1985-12-04 | 1994-03-22 | Massachusetts Institute Of Technology | Enhanced radiative zone-melting recrystallization method and apparatus |
US4964877A (en) | 1986-01-14 | 1990-10-23 | Wilson Greatbatch Ltd. | Non-aqueous lithium battery |
US4668593A (en) | 1986-08-29 | 1987-05-26 | Eltron Research, Inc. | Solvated electron lithium electrode for high energy density battery |
US4977007A (en) | 1986-09-19 | 1990-12-11 | Matsushita Electrical Indust. Co. | Solid electrochemical element and production process therefor |
US4740431A (en) | 1986-12-22 | 1988-04-26 | Spice Corporation | Integrated solar cell and battery |
US4728588A (en) | 1987-06-01 | 1988-03-01 | The Dow Chemical Company | Secondary battery |
US4865428A (en) | 1987-08-21 | 1989-09-12 | Corrigan Dennis A | Electrooptical device |
JP2692816B2 (en) | 1987-11-13 | 1997-12-17 | 株式会社きもと | Thin primary battery |
US4826743A (en) | 1987-12-16 | 1989-05-02 | General Motors Corporation | Solid-state lithium battery |
US4878094A (en) | 1988-03-30 | 1989-10-31 | Minko Balkanski | Self-powered electronic component and manufacturing method therefor |
US4915810A (en) | 1988-04-25 | 1990-04-10 | Unisys Corporation | Target source for ion beam sputter deposition |
US4903326A (en) | 1988-04-27 | 1990-02-20 | Motorola, Inc. | Detachable battery pack with a built-in broadband antenna |
US5096852A (en) | 1988-06-02 | 1992-03-17 | Burr-Brown Corporation | Method of making plastic encapsulated multichip hybrid integrated circuits |
US5403680A (en) | 1988-08-30 | 1995-04-04 | Osaka Gas Company, Ltd. | Photolithographic and electron beam lithographic fabrication of micron and submicron three-dimensional arrays of electronically conductive polymers |
FR2638764B1 (en) | 1988-11-04 | 1993-05-07 | Centre Nat Rech Scient | COMPOSITE ELEMENT COMPRISING A TITANIUM CHALCOGENIDE OR OXYCHALCOGENIDE LAYER, IN PARTICULAR AS A POSITIVE ELECTRODE IN A THIN-LAYER ELECTROCHEMICAL CELL |
JPH02133599A (en) | 1988-11-11 | 1990-05-22 | Agency Of Ind Science & Technol | Production of iridium oxide film |
US5100821A (en) | 1989-04-24 | 1992-03-31 | Motorola, Inc. | Semiconductor AC switch |
US5006737A (en) | 1989-04-24 | 1991-04-09 | Motorola Inc. | Transformerless semiconductor AC switch having internal biasing means |
JP2808660B2 (en) | 1989-05-01 | 1998-10-08 | ブラザー工業株式会社 | Method of manufacturing printed circuit board with built-in thin film battery |
US5217828A (en) | 1989-05-01 | 1993-06-08 | Brother Kogyo Kabushiki Kaisha | Flexible thin film cell including packaging material |
US5540742A (en) | 1989-05-01 | 1996-07-30 | Brother Kogyo Kabushiki Kaisha | Method of fabricating thin film cells and printed circuit boards containing thin film cells using a screen printing process |
US5221891A (en) | 1989-07-31 | 1993-06-22 | Intermatic Incorporated | Control circuit for a solar-powered rechargeable power source and load |
US5119269A (en) | 1989-08-23 | 1992-06-02 | Seiko Epson Corporation | Semiconductor with a battery unit |
US5223457A (en) | 1989-10-03 | 1993-06-29 | Applied Materials, Inc. | High-frequency semiconductor wafer processing method using a negative self-bias |
US5792550A (en) | 1989-10-24 | 1998-08-11 | Flex Products, Inc. | Barrier film having high colorless transparency and method |
JP2758948B2 (en) | 1989-12-15 | 1998-05-28 | キヤノン株式会社 | Thin film formation method |
DE4022090A1 (en) | 1989-12-18 | 1991-06-20 | Forschungszentrum Juelich Gmbh | ELECTRO-OPTICAL COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
US5196374A (en) | 1990-01-26 | 1993-03-23 | Sgs-Thomson Microelectronics, Inc. | Integrated circuit package with molded cell |
US5252194A (en) | 1990-01-26 | 1993-10-12 | Varian Associates, Inc. | Rotating sputtering apparatus for selected erosion |
US5124782A (en) | 1990-01-26 | 1992-06-23 | Sgs-Thomson Microelectronics, Inc. | Integrated circuit package with molded cell |
US5169408A (en) | 1990-01-26 | 1992-12-08 | Fsi International, Inc. | Apparatus for wafer processing with in situ rinse |
US5085904A (en) | 1990-04-20 | 1992-02-04 | E. I. Du Pont De Nemours And Company | Barrier materials useful for packaging |
US5306569A (en) | 1990-06-15 | 1994-04-26 | Hitachi Metals, Ltd. | Titanium-tungsten target material and manufacturing method thereof |
JP2755471B2 (en) | 1990-06-29 | 1998-05-20 | 日立電線株式会社 | Rare earth element doped optical waveguide and method of manufacturing the same |
US5225288A (en) | 1990-08-10 | 1993-07-06 | E. I. Du Pont De Nemours And Company | Solvent blockers and multilayer barrier coatings for thin films |
US5645626A (en) | 1990-08-10 | 1997-07-08 | Bend Research, Inc. | Composite hydrogen separation element and module |
US5147985A (en) | 1990-08-14 | 1992-09-15 | The Scabbard Corporation | Sheet batteries as substrate for electronic circuit |
US5110694A (en) | 1990-10-11 | 1992-05-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Secondary Li battery incorporating 12-Crown-4 ether |
US5110696A (en) | 1990-11-09 | 1992-05-05 | Bell Communications Research | Rechargeable lithiated thin film intercalation electrode battery |
US5273608A (en) | 1990-11-29 | 1993-12-28 | United Solar Systems Corporation | Method of encapsulating a photovoltaic device |
US5493177A (en) | 1990-12-03 | 1996-02-20 | The Regents Of The University Of California | Sealed micromachined vacuum and gas filled devices |
US5057385A (en) | 1990-12-14 | 1991-10-15 | Hope Henry F | Battery packaging construction |
NL9002844A (en) | 1990-12-21 | 1992-07-16 | Philips Nv | SYSTEM INCLUDING A DEVICE AND A CASSETTE, AND A DEVICE AND A CASSETTE SUITABLE FOR USE IN SUCH A SYSTEM. |
CA2056139C (en) | 1991-01-31 | 2000-08-01 | John C. Bailey | Electrochromic thin film state-of-charge detector for on-the-cell application |
US5227264A (en) | 1991-02-14 | 1993-07-13 | Hydro-Quebec | Device for packaging a lithium battery |
US6110531A (en) | 1991-02-25 | 2000-08-29 | Symetrix Corporation | Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition |
US5180645A (en) | 1991-03-01 | 1993-01-19 | Motorola, Inc. | Integral solid state embedded power supply |
JP2856365B2 (en) * | 1991-03-15 | 1999-02-10 | 株式会社村田製作所 | Flat power supply element |
US5119460A (en) | 1991-04-25 | 1992-06-02 | At&T Bell Laboratories | Erbium-doped planar optical device |
US5200029A (en) | 1991-04-25 | 1993-04-06 | At&T Bell Laboratories | Method of making a planar optical amplifier |
US5107538A (en) | 1991-06-06 | 1992-04-21 | At&T Bell Laboratories | Optical waveguide system comprising a rare-earth Si-based optical device |
US5208121A (en) | 1991-06-18 | 1993-05-04 | Wisconsin Alumni Research Foundation | Battery utilizing ceramic membranes |
US5187564A (en) | 1991-07-26 | 1993-02-16 | Sgs-Thomson Microelectronics, Inc. | Application of laminated interconnect media between a laminated power source and semiconductor devices |
US5153710A (en) | 1991-07-26 | 1992-10-06 | Sgs-Thomson Microelectronics, Inc. | Integrated circuit package with laminated backup cell |
US5171413A (en) | 1991-09-16 | 1992-12-15 | Tufts University | Methods for manufacturing solid state ionic devices |
US5196041A (en) | 1991-09-17 | 1993-03-23 | The Charles Stark Draper Laboratory, Inc. | Method of forming an optical channel waveguide by gettering |
US5355089A (en) | 1992-07-22 | 1994-10-11 | Duracell Inc. | Moisture barrier for battery with electrochemical tester |
JP2755844B2 (en) | 1991-09-30 | 1998-05-25 | シャープ株式会社 | Plastic substrate liquid crystal display |
US5702829A (en) | 1991-10-14 | 1997-12-30 | Commissariat A L'energie Atomique | Multilayer material, anti-erosion and anti-abrasion coating incorporating said multilayer material |
WO1993011572A1 (en) | 1991-12-06 | 1993-06-10 | Yuasa Corporation | Thin battery and monolithic thin battery |
SG44695A1 (en) | 1991-12-11 | 1997-12-19 | Mobil Oil Corp | High barrier film |
US5287427A (en) | 1992-05-05 | 1994-02-15 | At&T Bell Laboratories | Method of making an article comprising an optical component, and article comprising the component |
US6144916A (en) | 1992-05-15 | 2000-11-07 | Micron Communications, Inc. | Itinerary monitoring system for storing a plurality of itinerary data points |
US5497140A (en) | 1992-08-12 | 1996-03-05 | Micron Technology, Inc. | Electrically powered postage stamp or mailing or shipping label operative with radio frequency (RF) communication |
SE9201585L (en) | 1992-05-19 | 1993-11-01 | Gustavsson Magnus Peter M | Electrically heated garments or similar |
US5779839A (en) | 1992-06-17 | 1998-07-14 | Micron Communications, Inc. | Method of manufacturing an enclosed transceiver |
US5326652A (en) | 1993-01-25 | 1994-07-05 | Micron Semiconductor, Inc. | Battery package and method using flexible polymer films having a deposited layer of an inorganic material |
US5776278A (en) | 1992-06-17 | 1998-07-07 | Micron Communications, Inc. | Method of manufacturing an enclosed transceiver |
DE4345610B4 (en) | 1992-06-17 | 2013-01-03 | Micron Technology Inc. | Method for producing a radio-frequency identification device (HFID) |
US6045652A (en) | 1992-06-17 | 2000-04-04 | Micron Communications, Inc. | Method of manufacturing an enclosed transceiver |
US6741178B1 (en) | 1992-06-17 | 2004-05-25 | Micron Technology, Inc | Electrically powered postage stamp or mailing or shipping label operative with radio frequency (RF) communication |
US5338625A (en) | 1992-07-29 | 1994-08-16 | Martin Marietta Energy Systems, Inc. | Thin film battery and method for making same |
US7158031B2 (en) | 1992-08-12 | 2007-01-02 | Micron Technology, Inc. | Thin, flexible, RFID label and system for use |
JP3214910B2 (en) | 1992-08-18 | 2001-10-02 | 富士通株式会社 | Manufacturing method of planar waveguide optical amplifier |
US5538796A (en) | 1992-10-13 | 1996-07-23 | General Electric Company | Thermal barrier coating system having no bond coat |
US5597661A (en) | 1992-10-23 | 1997-01-28 | Showa Denko K.K. | Solid polymer electrolyte, battery and solid-state electric double layer capacitor using the same as well as processes for the manufacture thereof |
JP3231900B2 (en) | 1992-10-28 | 2001-11-26 | 株式会社アルバック | Film forming equipment |
US5326653A (en) | 1992-10-29 | 1994-07-05 | Valence Technology, Inc. | Battery unit with reinforced current collector tabs and method of making a battery unit having strengthened current collector tabs |
US5942089A (en) | 1996-04-22 | 1999-08-24 | Northwestern University | Method for sputtering compounds on a substrate |
JP3214107B2 (en) | 1992-11-09 | 2001-10-02 | 富士電機株式会社 | Battery mounted integrated circuit device |
JPH06158308A (en) | 1992-11-24 | 1994-06-07 | Hitachi Metals Ltd | Target for sputtering for indium-tin oxide film and its production |
US5279624A (en) | 1992-11-27 | 1994-01-18 | Gould Inc. | Solder sealed solid electrolyte cell housed within a ceramic frame and the method for producing it |
US5307240A (en) | 1992-12-02 | 1994-04-26 | Intel Corporation | Chiplid, multichip semiconductor package design concept |
US6022458A (en) | 1992-12-07 | 2000-02-08 | Canon Kabushiki Kaisha | Method of production of a semiconductor substrate |
AU669754B2 (en) | 1992-12-18 | 1996-06-20 | Becton Dickinson & Company | Barrier coating |
US5303319A (en) | 1992-12-28 | 1994-04-12 | Honeywell Inc. | Ion-beam deposited multilayer waveguides and resonators |
SE500725C2 (en) | 1992-12-29 | 1994-08-15 | Volvo Ab | Device at panels for vehicles |
US5427669A (en) | 1992-12-30 | 1995-06-27 | Advanced Energy Industries, Inc. | Thin film DC plasma processing system |
US5718813A (en) | 1992-12-30 | 1998-02-17 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
US5547780A (en) | 1993-01-18 | 1996-08-20 | Yuasa Corporation | Battery precursor and a battery |
US5300461A (en) | 1993-01-25 | 1994-04-05 | Intel Corporation | Process for fabricating sealed semiconductor chip using silicon nitride passivation film |
US5338624A (en) | 1993-02-08 | 1994-08-16 | Globe-Union Inc. | Thermal management of rechargeable batteries |
JPH06279185A (en) | 1993-03-25 | 1994-10-04 | Canon Inc | Forming method of diamond crystal and diamond crystal film |
US5262254A (en) | 1993-03-30 | 1993-11-16 | Valence Technology, Inc. | Positive electrode for rechargeable lithium batteries |
US5302474A (en) | 1993-04-02 | 1994-04-12 | Valence Technology, Inc. | Fullerene-containing cathodes for solid electrochemical cells |
US5613995A (en) | 1993-04-23 | 1997-03-25 | Lucent Technologies Inc. | Method for making planar optical waveguides |
US5665490A (en) | 1993-06-03 | 1997-09-09 | Showa Denko K.K. | Solid polymer electrolyte, battery and solid-state electric double layer capacitor using the same as well as processes for the manufacture thereof |
US5464692A (en) | 1993-06-17 | 1995-11-07 | Quality Manufacturing Incorporated | Flexible masking tape |
SG46607A1 (en) | 1993-07-28 | 1998-02-20 | Asahi Glass Co Ltd | Method of an apparatus for sputtering |
US5499207A (en) | 1993-08-06 | 1996-03-12 | Hitachi, Ltd. | Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same |
US5360686A (en) | 1993-08-20 | 1994-11-01 | The United States Of America As Represented By The National Aeronautics And Space Administration | Thin composite solid electrolyte film for lithium batteries |
US5599355A (en) | 1993-08-20 | 1997-02-04 | Nagasubramanian; Ganesan | Method for forming thin composite solid electrolyte film for lithium batteries |
JP2642849B2 (en) | 1993-08-24 | 1997-08-20 | 株式会社フロンテック | Thin film manufacturing method and manufacturing apparatus |
US5478456A (en) | 1993-10-01 | 1995-12-26 | Minnesota Mining And Manufacturing Company | Sputtering target |
US5314765A (en) | 1993-10-14 | 1994-05-24 | Martin Marietta Energy Systems, Inc. | Protective lithium ion conducting ceramic coating for lithium metal anodes and associate method |
EP0652308B1 (en) | 1993-10-14 | 2002-03-27 | Neuralsystems Corporation | Method of and apparatus for forming single-crystalline thin film |
US5411537A (en) | 1993-10-29 | 1995-05-02 | Intermedics, Inc. | Rechargeable biomedical battery powered devices with recharging and control system therefor |
US5445856A (en) | 1993-11-10 | 1995-08-29 | Chaloner-Gill; Benjamin | Protective multilayer laminate for covering an electrochemical device |
US5512387A (en) | 1993-11-19 | 1996-04-30 | Ovonic Battery Company, Inc. | Thin-film, solid state battery employing an electrically insulating, ion conducting electrolyte material |
US5738731A (en) | 1993-11-19 | 1998-04-14 | Mega Chips Corporation | Photovoltaic device |
US5985485A (en) | 1993-11-19 | 1999-11-16 | Ovshinsky; Stanford R. | Solid state battery having a disordered hydrogenated carbon negative electrode |
US5433835B1 (en) | 1993-11-24 | 1997-05-20 | Applied Materials Inc | Sputtering device and target with cover to hold cooling fluid |
US5487822A (en) | 1993-11-24 | 1996-01-30 | Applied Materials, Inc. | Integrated sputtering target assembly |
US5387482A (en) | 1993-11-26 | 1995-02-07 | Motorola, Inc. | Multilayered electrolyte and electrochemical cells used same |
US5654984A (en) | 1993-12-03 | 1997-08-05 | Silicon Systems, Inc. | Signal modulation across capacitors |
US6242128B1 (en) | 1993-12-06 | 2001-06-05 | Valence Technology, Inc. | Fastener system of tab bussing for batteries |
US5419982A (en) | 1993-12-06 | 1995-05-30 | Valence Technology, Inc. | Corner tab termination for flat-cell batteries |
US5569520A (en) | 1994-01-12 | 1996-10-29 | Martin Marietta Energy Systems, Inc. | Rechargeable lithium battery for use in applications requiring a low to high power output |
US5961672A (en) | 1994-02-16 | 1999-10-05 | Moltech Corporation | Stabilized anode for lithium-polymer batteries |
US5561004A (en) | 1994-02-25 | 1996-10-01 | Bates; John B. | Packaging material for thin film lithium batteries |
US5464706A (en) | 1994-03-02 | 1995-11-07 | Dasgupta; Sankar | Current collector for lithium ion battery |
US5547781A (en) * | 1994-03-02 | 1996-08-20 | Micron Communications, Inc. | Button-type battery with improved separator and gasket construction |
US6408402B1 (en) | 1994-03-22 | 2002-06-18 | Hyperchip Inc. | Efficient direct replacement cell fault tolerant architecture |
US5475528A (en) | 1994-03-25 | 1995-12-12 | Corning Incorporated | Optical signal amplifier glasses |
US5470396A (en) | 1994-04-12 | 1995-11-28 | Amoco Corporation | Solar cell module package and method for its preparation |
US5805223A (en) | 1994-05-25 | 1998-09-08 | Canon Kk | Image encoding apparatus having an intrapicture encoding mode and interpicture encoding mode |
US5411592A (en) | 1994-06-06 | 1995-05-02 | Ovonic Battery Company, Inc. | Apparatus for deposition of thin-film, solid state batteries |
JP3017538B2 (en) | 1994-06-13 | 2000-03-13 | 三井化学株式会社 | Thin carbon dioxide sensor using lithium ion conductive glass thin film |
US5472795A (en) | 1994-06-27 | 1995-12-05 | Board Of Regents Of The University Of The University Of Wisconsin System, On Behalf Of The University Of Wisconsin-Milwaukee | Multilayer nanolaminates containing polycrystalline zirconia |
US5457569A (en) | 1994-06-30 | 1995-10-10 | At&T Ipm Corp. | Semiconductor amplifier or laser having integrated lens |
WO1996000996A1 (en) | 1994-06-30 | 1996-01-11 | The Whitaker Corporation | Planar hybrid optical amplifier |
JP3407409B2 (en) | 1994-07-27 | 2003-05-19 | 富士通株式会社 | Manufacturing method of high dielectric constant thin film |
US5504041A (en) | 1994-08-01 | 1996-04-02 | Texas Instruments Incorporated | Conductive exotic-nitride barrier layer for high-dielectric-constant materials |
US6181283B1 (en) | 1994-08-01 | 2001-01-30 | Rangestar Wireless, Inc. | Selectively removable combination battery and antenna assembly for a telecommunication device |
US5445906A (en) | 1994-08-03 | 1995-08-29 | Martin Marietta Energy Systems, Inc. | Method and system for constructing a rechargeable battery and battery structures formed with the method |
US5458995A (en) | 1994-08-12 | 1995-10-17 | The United States Of America As Represented By The Secretary Of The Army | Solid state electrochemical cell including lithium iodide as an electrolyte additive |
US5483613A (en) | 1994-08-16 | 1996-01-09 | At&T Corp. | Optical device with substrate and waveguide structure having thermal matching interfaces |
US5909346A (en) | 1994-08-26 | 1999-06-01 | Aiwa Research & Development, Inc. | Thin magnetic film including multiple geometry gap structures on a common substrate |
US5437692A (en) | 1994-11-02 | 1995-08-01 | Dasgupta; Sankar | Method for forming an electrode-electrolyte assembly |
US5498489A (en) | 1995-04-14 | 1996-03-12 | Dasgupta; Sankar | Rechargeable non-aqueous lithium battery having stacked electrochemical cells |
JPH08148709A (en) | 1994-11-15 | 1996-06-07 | Mitsubishi Electric Corp | Method and device for manufacturing thin solar cell |
US7162392B2 (en) | 1994-11-21 | 2007-01-09 | Phatrat Technology, Inc. | Sport performance systems for measuring athletic performance, and associated methods |
US6025094A (en) | 1994-11-23 | 2000-02-15 | Polyplus Battery Company, Inc. | Protective coatings for negative electrodes |
CN1075243C (en) | 1994-12-28 | 2001-11-21 | 松下电器产业株式会社 | Capacity element of integrated circuit and manufacturing method thereof |
US6204111B1 (en) | 1994-12-28 | 2001-03-20 | Matsushita Electronics Corporation | Fabrication method of capacitor for integrated circuit |
US5555342A (en) | 1995-01-17 | 1996-09-10 | Lucent Technologies Inc. | Planar waveguide and a process for its fabrication |
US5607789A (en) | 1995-01-23 | 1997-03-04 | Duracell Inc. | Light transparent multilayer moisture barrier for electrochemical cell tester and cell employing same |
US5755831A (en) | 1995-02-22 | 1998-05-26 | Micron Communications, Inc. | Method of forming a button-type battery and a button-type battery with improved separator construction |
US6444750B1 (en) | 1995-03-06 | 2002-09-03 | Exxonmobil Oil Corp. | PVOH-based coating solutions |
US5612153A (en) | 1995-04-13 | 1997-03-18 | Valence Technology, Inc. | Battery mask from radiation curable and thermoplastic materials |
WO1996034124A1 (en) | 1995-04-25 | 1996-10-31 | The Boc Group, Inc. | Sputtering system using cylindrical rotating magnetron electrically powered using alternating current |
US5771562A (en) | 1995-05-02 | 1998-06-30 | Motorola, Inc. | Passivation of organic devices |
EP0834594B1 (en) | 1995-05-18 | 2004-11-10 | Asahi Glass Company Ltd. | Process for producing sputtering target |
US5645960A (en) | 1995-05-19 | 1997-07-08 | The United States Of America As Represented By The Secretary Of The Air Force | Thin film lithium polymer battery |
US5601952A (en) | 1995-05-24 | 1997-02-11 | Dasgupta; Sankar | Lithium-Manganese oxide electrode for a rechargeable lithium battery |
US5758575A (en) | 1995-06-07 | 1998-06-02 | Bemis Company Inc. | Apparatus for printing an electrical circuit component with print cells in liquid communication |
US5625202A (en) | 1995-06-08 | 1997-04-29 | University Of Central Florida | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth |
US6265652B1 (en) | 1995-06-15 | 2001-07-24 | Kanegafuchi Kagaku Kogyo Kabushiki Kabushiki Kaisha | Integrated thin-film solar battery and method of manufacturing the same |
KR100342189B1 (en) | 1995-07-12 | 2002-11-30 | 삼성전자 주식회사 | Method for producing rare earth elements-added optical fiber by using volatile composite |
US6118426A (en) | 1995-07-20 | 2000-09-12 | E Ink Corporation | Transducers and indicators having printed displays |
US6639578B1 (en) | 1995-07-20 | 2003-10-28 | E Ink Corporation | Flexible displays |
US6459418B1 (en) | 1995-07-20 | 2002-10-01 | E Ink Corporation | Displays combining active and non-active inks |
US5677784A (en) | 1995-07-24 | 1997-10-14 | Ellis D. Harris Sr. Family Trust | Array of pellicle optical gates |
EP0761838B1 (en) | 1995-08-18 | 2001-08-08 | W.C. Heraeus GmbH & Co. KG | Sputtering target and method for its manufacturing |
US5563979A (en) | 1995-08-31 | 1996-10-08 | Lucent Technologies Inc. | Erbium-doped planar optical device |
US5582935A (en) | 1995-09-28 | 1996-12-10 | Dasgupta; Sankar | Composite electrode for a lithium battery |
US5689522A (en) | 1995-10-02 | 1997-11-18 | The Regents Of The University Of California | High efficiency 2 micrometer laser utilizing wing-pumped Tm3+ and a laser diode array end-pumping architecture |
US5716736A (en) | 1995-10-06 | 1998-02-10 | Midwest Research Institute | Solid lithium-ion electrolyte |
US5616933A (en) | 1995-10-16 | 1997-04-01 | Sony Corporation | Nitride encapsulated thin film transistor fabrication technique |
US5719976A (en) | 1995-10-24 | 1998-02-17 | Lucent Technologies, Inc. | Optimized waveguide structure |
JP3298799B2 (en) | 1995-11-22 | 2002-07-08 | ルーセント テクノロジーズ インコーポレイテッド | Cladding pump fiber and its manufacturing method |
US5811177A (en) | 1995-11-30 | 1998-09-22 | Motorola, Inc. | Passivation of electroluminescent organic devices |
US5686360A (en) | 1995-11-30 | 1997-11-11 | Motorola | Passivation of organic devices |
US5644207A (en) | 1995-12-11 | 1997-07-01 | The Johns Hopkins University | Integrated power source |
US6608464B1 (en) | 1995-12-11 | 2003-08-19 | The Johns Hopkins University | Integrated power source layered with thin film rechargeable batteries, charger, and charge-control |
US5897522A (en) | 1995-12-20 | 1999-04-27 | Power Paper Ltd. | Flexible thin layer open electrochemical cell and applications of same |
US5955161A (en) | 1996-01-30 | 1999-09-21 | Becton Dickinson And Company | Blood collection tube assembly |
US5637418A (en) | 1996-02-08 | 1997-06-10 | Motorola, Inc. | Package for a flat electrochemical device |
US5721067A (en) | 1996-02-22 | 1998-02-24 | Jacobs; James K. | Rechargeable lithium battery having improved reversible capacity |
US5845990A (en) | 1996-03-11 | 1998-12-08 | Hilite Systems, L.L.C. | High signal lights for automotive vehicles |
DE19609647A1 (en) | 1996-03-12 | 1997-09-18 | Univ Sheffield | Hard coating |
US5930584A (en) | 1996-04-10 | 1999-07-27 | United Microelectronics Corp. | Process for fabricating low leakage current electrode for LPCVD titanium oxide films |
JPH1010675A (en) | 1996-04-22 | 1998-01-16 | Fuji Photo Film Co Ltd | Recording material |
JP3346167B2 (en) | 1996-05-27 | 2002-11-18 | 三菱マテリアル株式会社 | High-strength dielectric sputtering target, method for producing the same, and film |
JP3862760B2 (en) | 1996-06-12 | 2006-12-27 | トレスパファン、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツング | Transparent barrier coating showing low film interference |
US5948464A (en) | 1996-06-19 | 1999-09-07 | Imra America, Inc. | Process of manufacturing porous separator for electrochemical power supply |
EP0814529A1 (en) | 1996-06-19 | 1997-12-29 | Koninklijke Philips Electronics N.V. | Thin card containing flat accumulator and connecting devices |
US5731661A (en) | 1996-07-15 | 1998-03-24 | Motorola, Inc. | Passivation of electroluminescent organic devices |
US5855744A (en) | 1996-07-19 | 1999-01-05 | Applied Komatsu Technology, Inc. | Non-planar magnet tracking during magnetron sputtering |
US5693956A (en) | 1996-07-29 | 1997-12-02 | Motorola | Inverted oleds on hard plastic substrate |
JP3825843B2 (en) | 1996-09-12 | 2006-09-27 | キヤノン株式会社 | Solar cell module |
KR20000049093A (en) | 1996-10-11 | 2000-07-25 | 자르밀라 제트. 흐르벡 | Polymer electrolyte, intercalation compounds and electrodes for batteries |
US6007945A (en) | 1996-10-15 | 1999-12-28 | Electrofuel Inc. | Negative electrode for a rechargeable lithium battery comprising a solid solution of titanium dioxide and tin dioxide |
JP3631341B2 (en) | 1996-10-18 | 2005-03-23 | Tdk株式会社 | Multilayer composite functional element and method for manufacturing the same |
US5716728A (en) | 1996-11-04 | 1998-02-10 | Wilson Greatbatch Ltd. | Alkali metal electrochemical cell with improved energy density |
US5841931A (en) | 1996-11-26 | 1998-11-24 | Massachusetts Institute Of Technology | Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby |
US5783333A (en) | 1996-11-27 | 1998-07-21 | Polystor Corporation | Lithium nickel cobalt oxides for positive electrodes |
DE69735551T2 (en) | 1996-12-11 | 2006-12-21 | Tonen Chemical Corp. | Thin, aprotic electrolyte film, immobilized liquid film conductor and polymer cell |
US6144795A (en) | 1996-12-13 | 2000-11-07 | Corning Incorporated | Hybrid organic-inorganic planar optical waveguide device |
US6289209B1 (en) | 1996-12-18 | 2001-09-11 | Micron Technology, Inc. | Wireless communication system, radio frequency communications system, wireless communications method, radio frequency communications method |
US5842118A (en) | 1996-12-18 | 1998-11-24 | Micron Communications, Inc. | Communication system including diversity antenna queuing |
JPH10195649A (en) | 1996-12-27 | 1998-07-28 | Sony Corp | Magnetron sputter device and manufacture of semiconductor device |
US5705293A (en) | 1997-01-09 | 1998-01-06 | Lockheed Martin Energy Research Corporation | Solid state thin film battery having a high temperature lithium alloy anode |
US5882812A (en) | 1997-01-14 | 1999-03-16 | Polyplus Battery Company, Inc. | Overcharge protection systems for rechargeable batteries |
US5790489A (en) | 1997-01-21 | 1998-08-04 | Dell Usa, L.P. | Smart compact disk including a processor and a transmission element |
JP4104187B2 (en) | 1997-02-06 | 2008-06-18 | 株式会社クレハ | Carbonaceous material for secondary battery electrode |
US5944964A (en) | 1997-02-13 | 1999-08-31 | Optical Coating Laboratory, Inc. | Methods and apparatus for preparing low net stress multilayer thin film coatings |
JPH10229201A (en) | 1997-02-14 | 1998-08-25 | Sony Corp | Manufacture of thin-film semiconductor device |
JP3345878B2 (en) | 1997-02-17 | 2002-11-18 | 株式会社デンソー | Manufacturing method of electronic circuit device |
US5847865A (en) | 1997-02-18 | 1998-12-08 | Regents Of The University Of Minnesota | Waveguide optical amplifier |
US5970393A (en) | 1997-02-25 | 1999-10-19 | Polytechnic University | Integrated micro-strip antenna apparatus and a system utilizing the same for wireless communications for sensing and actuation purposes |
JP3767151B2 (en) | 1997-02-26 | 2006-04-19 | ソニー株式会社 | Thin battery |
JPH10302843A (en) | 1997-02-28 | 1998-11-13 | Mitsubishi Electric Corp | Adhesive for battery, battery using it, and its manufacture |
JP3098204B2 (en) | 1997-03-07 | 2000-10-16 | ティーディーケイ株式会社 | Alloy target for magneto-optical recording, its manufacturing method and its reproducing method |
US5952778A (en) | 1997-03-18 | 1999-09-14 | International Business Machines Corporation | Encapsulated organic light emitting device |
JPH10265948A (en) | 1997-03-25 | 1998-10-06 | Rohm Co Ltd | Substrate for semiconductor device and manufacture of the same |
DE69704074T2 (en) | 1997-03-27 | 2001-06-21 | Tno | Erbium-doped planar waveguide |
US6106933A (en) | 1997-04-03 | 2000-08-22 | Toray Industries, Inc. | Transparent gas barrier biaxially oriented polypropylene film, a laminate film, and a production method thereof |
US6242132B1 (en) | 1997-04-16 | 2001-06-05 | Ut-Battelle, Llc | Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery |
US5948215A (en) | 1997-04-21 | 1999-09-07 | Tokyo Electron Limited | Method and apparatus for ionized sputtering |
US6030421A (en) | 1997-04-23 | 2000-02-29 | Hydro-Quebec | Ultra thin solid state lithium batteries and process of preparing same |
US6394598B1 (en) | 1997-04-28 | 2002-05-28 | Binney & Smith Inc. | Ink jet marker |
US6422698B2 (en) | 1997-04-28 | 2002-07-23 | Binney & Smith Inc. | Ink jet marker |
US5882721A (en) | 1997-05-01 | 1999-03-16 | Imra America Inc | Process of manufacturing porous separator for electrochemical power supply |
US6329213B1 (en) | 1997-05-01 | 2001-12-11 | Micron Technology, Inc. | Methods for forming integrated circuits within substrates |
JP3290375B2 (en) | 1997-05-12 | 2002-06-10 | 松下電器産業株式会社 | Organic electroluminescent device |
JP3045998B2 (en) | 1997-05-15 | 2000-05-29 | エフエムシー・コーポレイション | Interlayer compound and method for producing the same |
US5895731A (en) | 1997-05-15 | 1999-04-20 | Nelson E. Smith | Thin-film lithium battery and process |
US5830330A (en) | 1997-05-22 | 1998-11-03 | Tokyo Electron Limited | Method and apparatus for low pressure sputtering |
US6000603A (en) | 1997-05-23 | 1999-12-14 | 3M Innovative Properties Company | Patterned array of metal balls and methods of making |
US5977582A (en) | 1997-05-23 | 1999-11-02 | Lucent Technologies Inc. | Capacitor comprising improved TaOx -based dielectric |
US6316563B2 (en) | 1997-05-27 | 2001-11-13 | Showa Denko K.K. | Thermopolymerizable composition and use thereof |
US6077106A (en) | 1997-06-05 | 2000-06-20 | Micron Communications, Inc. | Thin profile battery mounting contact for printed circuit boards |
KR19990007150A (en) | 1997-06-20 | 1999-01-25 | 이데이 노부유끼 | battery |
US5865860A (en) | 1997-06-20 | 1999-02-02 | Imra America, Inc. | Process for filling electrochemical cells with electrolyte |
US6051114A (en) | 1997-06-23 | 2000-04-18 | Applied Materials, Inc. | Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition |
US5831262A (en) | 1997-06-27 | 1998-11-03 | Lucent Technologies Inc. | Article comprising an optical fiber attached to a micromechanical device |
JP3813740B2 (en) | 1997-07-11 | 2006-08-23 | Tdk株式会社 | Substrates for electronic devices |
US5982144A (en) | 1997-07-14 | 1999-11-09 | Johnson Research & Development Company, Inc. | Rechargeable battery power supply overcharge protection circuit |
JP3335884B2 (en) | 1997-07-16 | 2002-10-21 | 株式会社荏原製作所 | Corrosion / corrosion analysis method |
US6046514A (en) | 1997-07-25 | 2000-04-04 | 3M Innovative Properties Company | Bypass apparatus and method for series connected energy storage devices |
US5973913A (en) | 1997-08-12 | 1999-10-26 | Covalent Associates, Inc. | Nonaqueous electrical storage device |
KR100250855B1 (en) | 1997-08-28 | 2000-04-01 | 손욱 | A hybrid polymeric electrolyte, a method of making the same and a lithium battery with the same |
US6252564B1 (en) | 1997-08-28 | 2001-06-26 | E Ink Corporation | Tiled displays |
JPH11111273A (en) | 1997-09-29 | 1999-04-23 | Furukawa Battery Co Ltd:The | Manufacture of plate for lithium secondary battery and lithium secondary battery |
JPH11111262A (en) * | 1997-10-06 | 1999-04-23 | Sanyo Electric Co Ltd | Thin battery |
EP0964461B1 (en) * | 1997-10-07 | 2007-04-11 | Matsushita Electric Industrial Co., Ltd. | Non-aqueous electrolyte secondary cell |
US5916704A (en) | 1997-10-10 | 1999-06-29 | Ultralife Batteries | Low pressure battery vent |
EP1027723B1 (en) | 1997-10-14 | 2009-06-17 | Patterning Technologies Limited | Method of forming an electric capacitor |
US6982132B1 (en) | 1997-10-15 | 2006-01-03 | Trustees Of Tufts College | Rechargeable thin film battery and method for making the same |
US6094292A (en) | 1997-10-15 | 2000-07-25 | Trustees Of Tufts College | Electrochromic window with high reflectivity modulation |
US6084285A (en) | 1997-10-20 | 2000-07-04 | The Board Of Trustees Of The Leland Stanford Junior University | Lateral flux capacitor having fractal-shaped perimeters |
US5985484A (en) | 1997-10-20 | 1999-11-16 | Amtek Research International Llc | Battery separation |
EP1023692B1 (en) | 1997-10-22 | 2002-08-28 | Cambridge Consultants Limited | Portable ic card |
US5948562A (en) | 1997-11-03 | 1999-09-07 | Motorola, Inc. | Energy storage device |
US6041734A (en) | 1997-12-01 | 2000-03-28 | Applied Materials, Inc. | Use of an asymmetric waveform to control ion bombardment during substrate processing |
US6052397A (en) | 1997-12-05 | 2000-04-18 | Sdl, Inc. | Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam |
US6120890A (en) | 1997-12-12 | 2000-09-19 | Seagate Technology, Inc. | Magnetic thin film medium comprising amorphous sealing layer for reduced lithium migration |
US5976327A (en) | 1997-12-12 | 1999-11-02 | Applied Materials, Inc. | Step coverage and overhang improvement by pedestal bias voltage modulation |
US6042965A (en) | 1997-12-12 | 2000-03-28 | Johnson Research & Development Company, Inc. | Unitary separator and electrode structure and method of manufacturing separator |
US6045942A (en) | 1997-12-15 | 2000-04-04 | Avery Dennison Corporation | Low profile battery and method of making same |
US6019284A (en) | 1998-01-27 | 2000-02-01 | Viztec Inc. | Flexible chip card with display |
US6137671A (en) | 1998-01-29 | 2000-10-24 | Energenius, Inc. | Embedded energy storage device |
US6608470B1 (en) | 1998-01-31 | 2003-08-19 | Motorola, Inc. | Overcharge protection device and methods for lithium based rechargeable batteries |
KR100474746B1 (en) | 1998-02-12 | 2005-03-08 | 에이씨엠 리서치, 인코포레이티드 | Plating apparatus and method |
US6402795B1 (en) | 1998-02-18 | 2002-06-11 | Polyplus Battery Company, Inc. | Plating metal negative electrodes under protective coatings |
US6753108B1 (en) | 1998-02-24 | 2004-06-22 | Superior Micropowders, Llc | Energy devices and methods for the fabrication of energy devices |
US6223317B1 (en) | 1998-02-28 | 2001-04-24 | Micron Technology, Inc. | Bit synchronizers and methods of synchronizing and calculating error |
JP4085459B2 (en) | 1998-03-02 | 2008-05-14 | セイコーエプソン株式会社 | Manufacturing method of three-dimensional device |
US6080508A (en) | 1998-03-06 | 2000-06-27 | Electrofuel Inc. | Packaging assembly for a lithium battery |
US6610440B1 (en) | 1998-03-10 | 2003-08-26 | Bipolar Technologies, Inc | Microscopic batteries for MEMS systems |
US6004660A (en) | 1998-03-12 | 1999-12-21 | E.I. Du Pont De Nemours And Company | Oxygen barrier composite film structure |
US5889383A (en) | 1998-04-03 | 1999-03-30 | Advanced Micro Devices, Inc. | System and method for charging batteries with ambient acoustic energy |
GB9808061D0 (en) | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
US6563998B1 (en) | 1999-04-15 | 2003-05-13 | John Farah | Polished polymide substrate |
US6753114B2 (en) | 1998-04-20 | 2004-06-22 | Electrovaya Inc. | Composite electrolyte for a rechargeable lithium battery |
US6175075B1 (en) | 1998-04-21 | 2001-01-16 | Canon Kabushiki Kaisha | Solar cell module excelling in reliability |
US6169474B1 (en) | 1998-04-23 | 2001-01-02 | Micron Technology, Inc. | Method of communications in a backscatter system, interrogator, and backscatter communications system |
US6324211B1 (en) | 1998-04-24 | 2001-11-27 | Micron Technology, Inc. | Interrogators communication systems communication methods and methods of processing a communication signal |
US6459726B1 (en) | 1998-04-24 | 2002-10-01 | Micron Technology, Inc. | Backscatter interrogators, communication systems and backscatter communication methods |
US6905578B1 (en) | 1998-04-27 | 2005-06-14 | Cvc Products, Inc. | Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure |
US6214061B1 (en) | 1998-05-01 | 2001-04-10 | Polyplus Battery Company, Inc. | Method for forming encapsulated lithium electrodes having glass protective layers |
US6420961B1 (en) | 1998-05-14 | 2002-07-16 | Micron Technology, Inc. | Wireless communication systems, interfacing devices, communication methods, methods of interfacing with an interrogator, and methods of operating an interrogator |
US6075973A (en) | 1998-05-18 | 2000-06-13 | Micron Technology, Inc. | Method of communications in a backscatter system, interrogator, and backscatter communications system |
US6115616A (en) | 1998-05-28 | 2000-09-05 | International Business Machines Corporation | Hand held telephone set with separable keyboard |
DE19824145A1 (en) | 1998-05-29 | 1999-12-16 | Siemens Ag | Integrated antenna arrangement for mobile telecommunications terminal |
JP3126698B2 (en) | 1998-06-02 | 2001-01-22 | 富士通株式会社 | Sputter film forming method, sputter film forming apparatus, and semiconductor device manufacturing method |
US6093944A (en) | 1998-06-04 | 2000-07-25 | Lucent Technologies Inc. | Dielectric materials of amorphous compositions of TI-O2 doped with rare earth elements and devices employing same |
US7854684B1 (en) | 1998-06-24 | 2010-12-21 | Samsung Electronics Co., Ltd. | Wearable device |
KR100287176B1 (en) | 1998-06-25 | 2001-04-16 | 윤종용 | Method for forming a capacitor using high temperature oxidation |
US6058233A (en) | 1998-06-30 | 2000-05-02 | Lucent Technologies Inc. | Waveguide array with improved efficiency for wavelength routers and star couplers in integrated optics |
GB9814123D0 (en) | 1998-07-01 | 1998-08-26 | British Gas Plc | Electrochemical fuel cell |
EP0969521A1 (en) | 1998-07-03 | 2000-01-05 | ISOVOLTAÖsterreichische IsolierstoffwerkeAktiengesellschaft | Photovoltaic module and method of fabrication |
DE19831719A1 (en) | 1998-07-15 | 2000-01-20 | Alcatel Sa | Process for the production of planar waveguide structures and waveguide structure |
US6358810B1 (en) | 1998-07-28 | 2002-03-19 | Applied Materials, Inc. | Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes |
US6146225A (en) | 1998-07-30 | 2000-11-14 | Agilent Technologies, Inc. | Transparent, flexible permeability barrier for organic electroluminescent devices |
US6129277A (en) | 1998-08-03 | 2000-10-10 | Privicon, Inc. | Card reader for transmission of data by sound |
US6579728B2 (en) | 1998-08-03 | 2003-06-17 | Privicom, Inc. | Fabrication of a high resolution, low profile credit card reader and card reader for transmission of data by sound |
US6160373A (en) | 1998-08-10 | 2000-12-12 | Dunn; James P. | Battery operated cableless external starting device and methods |
JP2000067852A (en) | 1998-08-21 | 2000-03-03 | Pioneer Electronic Corp | Lithium secondary battery |
KR100305903B1 (en) | 1998-08-21 | 2001-12-17 | 박호군 | Electrical and electronic devices with thin-film batteries connected vertically and integrated and methods for fabricating the same |
US6480699B1 (en) | 1998-08-28 | 2002-11-12 | Woodtoga Holdings Company | Stand-alone device for transmitting a wireless signal containing data from a memory or a sensor |
US6210832B1 (en) | 1998-09-01 | 2001-04-03 | Polyplus Battery Company, Inc. | Mixed ionic electronic conductor coatings for redox electrodes |
US6192222B1 (en) | 1998-09-03 | 2001-02-20 | Micron Technology, Inc. | Backscatter communication systems, interrogators, methods of communicating in a backscatter system, and backscatter communication methods |
JP4014737B2 (en) | 1998-09-17 | 2007-11-28 | 昭和電工株式会社 | Thermally polymerizable composition and use thereof |
US6236793B1 (en) | 1998-09-23 | 2001-05-22 | Molecular Optoelectronics Corporation | Optical channel waveguide amplifier |
US6159635A (en) | 1998-09-29 | 2000-12-12 | Electrofuel Inc. | Composite electrode including current collector |
JP3663616B2 (en) | 1998-10-07 | 2005-06-22 | 横河電機株式会社 | Heat conduction rubber body of heat sink |
US7323634B2 (en) | 1998-10-14 | 2008-01-29 | Patterning Technologies Limited | Method of forming an electronic device |
KR100282487B1 (en) | 1998-10-19 | 2001-02-15 | 윤종용 | Cell Capacitor Using High-Dielectric Multilayer Film and Its Manufacturing Method |
US6605228B1 (en) | 1998-10-19 | 2003-08-12 | Nhk Spring Co., Ltd. | Method for fabricating planar optical waveguide devices |
JP4126711B2 (en) | 1998-10-23 | 2008-07-30 | ソニー株式会社 | Non-aqueous electrolyte battery |
JP3830008B2 (en) | 1998-10-30 | 2006-10-04 | ソニー株式会社 | Non-aqueous electrolyte battery |
US6157765A (en) | 1998-11-03 | 2000-12-05 | Lucent Technologies | Planar waveguide optical amplifier |
KR100280705B1 (en) | 1998-11-05 | 2001-03-02 | 김순택 | Electrode active material composition for lithium ion polymer battery and manufacturing method of electrode plate for lithium ion polymer battery using same |
US6797429B1 (en) | 1998-11-06 | 2004-09-28 | Japan Storage Battery Co, Ltd. | Non-aqueous electrolytic secondary cell |
ATE333207T1 (en) | 1998-11-09 | 2006-08-15 | Ballard Power Systems | ELECTRICAL CONTACT DEVICE FOR A FUEL CELL |
US6117279A (en) | 1998-11-12 | 2000-09-12 | Tokyo Electron Limited | Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition |
US6384573B1 (en) | 1998-11-12 | 2002-05-07 | James Dunn | Compact lightweight auxiliary multifunctional reserve battery engine starting system (and methods) |
JP2000162234A (en) | 1998-11-30 | 2000-06-16 | Matsushita Electric Ind Co Ltd | Piezoelectric sensor circuit |
WO2000033409A1 (en) | 1998-12-03 | 2000-06-08 | Sumitomo Electric Industries, Ltd. | Lithium storage battery |
EP1145338B1 (en) | 1998-12-16 | 2012-12-05 | Samsung Display Co., Ltd. | Environmental barrier material for organic light emitting device and method of making |
US6268695B1 (en) | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
JP2000188099A (en) | 1998-12-22 | 2000-07-04 | Mitsubishi Chemicals Corp | Manufacture of thin film type battery |
GB9900396D0 (en) | 1999-01-08 | 1999-02-24 | Danionics As | Arrangements of electrochemical cells |
AU2961600A (en) | 1999-01-08 | 2000-07-24 | Massachusetts Institute Of Technology | Electroactive material for secondary batteries and methods of preparation |
JP4074418B2 (en) | 1999-01-11 | 2008-04-09 | 三菱化学株式会社 | Thin film type lithium secondary battery |
US6379835B1 (en) | 1999-01-12 | 2002-04-30 | Morgan Adhesives Company | Method of making a thin film battery |
US6290822B1 (en) | 1999-01-26 | 2001-09-18 | Agere Systems Guardian Corp. | Sputtering method for forming dielectric films |
US6302939B1 (en) | 1999-02-01 | 2001-10-16 | Magnequench International, Inc. | Rare earth permanent magnet and method for making same |
US6306265B1 (en) | 1999-02-12 | 2001-10-23 | Applied Materials, Inc. | High-density plasma for ionized metal deposition capable of exciting a plasma wave |
AU768057B2 (en) | 1999-02-25 | 2003-11-27 | Kaneka Corporation | Integrated thin-film solar battery |
US6210544B1 (en) | 1999-03-08 | 2001-04-03 | Alps Electric Co., Ltd. | Magnetic film forming method |
US6603391B1 (en) | 1999-03-09 | 2003-08-05 | Micron Technology, Inc. | Phase shifters, interrogators, methods of shifting a phase angle of a signal, and methods of operating an interrogator |
US6356764B1 (en) | 1999-03-09 | 2002-03-12 | Micron Technology, Inc. | Wireless communication systems, interrogators and methods of communicating within a wireless communication system |
EP1037293B1 (en) | 1999-03-16 | 2007-05-16 | Sumitomo Chemical Company, Limited | Non-aqueous electrolyte and lithium secondary battery using the same |
US6277520B1 (en) | 1999-03-19 | 2001-08-21 | Ntk Powerdex, Inc. | Thin lithium battery with slurry cathode |
US6280875B1 (en) | 1999-03-24 | 2001-08-28 | Teledyne Technologies Incorporated | Rechargeable battery structure with metal substrate |
ES2198833T3 (en) | 1999-03-25 | 2004-02-01 | Kaneka Corporation | PROCEDURE OF MANUFACTURE OF SOLAR CELL MODULES OF FINE COAT. |
US6160215A (en) | 1999-03-26 | 2000-12-12 | Curtin; Lawrence F. | Method of making photovoltaic device |
US6148503A (en) | 1999-03-31 | 2000-11-21 | Imra America, Inc. | Process of manufacturing porous separator for electrochemical power supply |
US6168884B1 (en) | 1999-04-02 | 2001-01-02 | Lockheed Martin Energy Research Corporation | Battery with an in-situ activation plated lithium anode |
US6398824B1 (en) | 1999-04-02 | 2002-06-04 | Excellatron Solid State, Llc | Method for manufacturing a thin-film lithium battery by direct deposition of battery components on opposite sides of a current collector |
US6242129B1 (en) | 1999-04-02 | 2001-06-05 | Excellatron Solid State, Llc | Thin lithium film battery |
WO2000062365A1 (en) | 1999-04-14 | 2000-10-19 | Power Paper Ltd. | Functionally improved battery and method of making same |
US6855441B1 (en) | 1999-04-14 | 2005-02-15 | Power Paper Ltd. | Functionally improved battery and method of making same |
US6416598B1 (en) | 1999-04-20 | 2002-07-09 | Reynolds Metals Company | Free machining aluminum alloy with high melting point machining constituent and method of use |
KR100296741B1 (en) | 1999-05-11 | 2001-07-12 | 박호군 | Battery with trench structure and fabrication method |
JP3736205B2 (en) | 1999-06-04 | 2006-01-18 | 三菱電機株式会社 | Battery power storage device |
US6281142B1 (en) | 1999-06-04 | 2001-08-28 | Micron Technology, Inc. | Dielectric cure for reducing oxygen vacancies |
US6046081A (en) | 1999-06-10 | 2000-04-04 | United Microelectronics Corp. | Method for forming dielectric layer of capacitor |
US6133670A (en) | 1999-06-24 | 2000-10-17 | Sandia Corporation | Compact electrostatic comb actuator |
US6413676B1 (en) | 1999-06-28 | 2002-07-02 | Lithium Power Technologies, Inc. | Lithium ion polymer electrolytes |
JP2001020065A (en) | 1999-07-07 | 2001-01-23 | Hitachi Metals Ltd | Target for sputtering, its production and high melting point metal powder material |
JP2001021744A (en) | 1999-07-07 | 2001-01-26 | Shin Etsu Chem Co Ltd | Manufacture of optical waveguide substrate |
JP2001025666A (en) | 1999-07-14 | 2001-01-30 | Nippon Sheet Glass Co Ltd | Laminate and its production |
US6290821B1 (en) | 1999-07-15 | 2001-09-18 | Seagate Technology Llc | Sputter deposition utilizing pulsed cathode and substrate bias power |
KR100456647B1 (en) | 1999-08-05 | 2004-11-10 | 에스케이씨 주식회사 | Lithium ion polymer battery |
US6344795B1 (en) | 1999-08-17 | 2002-02-05 | Lucent Technologies Inc. | Method and apparatus for generating temperature based alerting signals |
US6249222B1 (en) | 1999-08-17 | 2001-06-19 | Lucent Technologies Inc. | Method and apparatus for generating color based alerting signals |
US6356230B1 (en) | 1999-08-20 | 2002-03-12 | Micron Technology, Inc. | Interrogators, wireless communication systems, methods of operating an interrogator, methods of monitoring movement of a radio frequency identification device, methods of monitoring movement of a remote communication device and movement monitoring methods |
US6414626B1 (en) | 1999-08-20 | 2002-07-02 | Micron Technology, Inc. | Interrogators, wireless communication systems, methods of operating an interrogator, methods of operating a wireless communication system, and methods of determining range of a remote communication device |
US6645675B1 (en) | 1999-09-02 | 2003-11-11 | Lithium Power Technologies, Inc. | Solid polymer electrolytes |
US6664006B1 (en) | 1999-09-02 | 2003-12-16 | Lithium Power Technologies, Inc. | All-solid-state electrochemical device and method of manufacturing |
US6537428B1 (en) | 1999-09-02 | 2003-03-25 | Veeco Instruments, Inc. | Stable high rate reactive sputtering |
US6392565B1 (en) | 1999-09-10 | 2002-05-21 | Eworldtrack, Inc. | Automobile tracking and anti-theft system |
US6528212B1 (en) | 1999-09-13 | 2003-03-04 | Sanyo Electric Co., Ltd. | Lithium battery |
US6344366B1 (en) | 1999-09-15 | 2002-02-05 | Lockheed Martin Energy Research Corporation | Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing |
US6296949B1 (en) | 1999-09-16 | 2001-10-02 | Ga-Tek Inc. | Copper coated polyimide with metallic protective layer |
JP4240679B2 (en) | 1999-09-21 | 2009-03-18 | ソニー株式会社 | Method for producing sputtering target |
US6296967B1 (en) | 1999-09-24 | 2001-10-02 | Electrofuel Inc. | Lithium battery structure incorporating lithium pouch cells |
TW457767B (en) | 1999-09-27 | 2001-10-01 | Matsushita Electric Works Ltd | Photo response semiconductor switch having short circuit load protection |
JP4460742B2 (en) | 1999-10-01 | 2010-05-12 | 日本碍子株式会社 | Piezoelectric / electrostrictive device and manufacturing method thereof |
US6368275B1 (en) | 1999-10-07 | 2002-04-09 | Acuson Corporation | Method and apparatus for diagnostic medical information gathering, hyperthermia treatment, or directed gene therapy |
DE19948839A1 (en) | 1999-10-11 | 2001-04-12 | Bps Alzenau Gmbh | Conductive transparent layers and processes for their manufacture |
US6500287B1 (en) | 1999-10-14 | 2002-12-31 | Forskarpatent I Uppsala Ab | Color-modifying treatment of thin films |
US6548912B1 (en) | 1999-10-25 | 2003-04-15 | Battelle Memorial Institute | Semicoductor passivation using barrier coatings |
US7198832B2 (en) | 1999-10-25 | 2007-04-03 | Vitex Systems, Inc. | Method for edge sealing barrier films |
US6413645B1 (en) | 2000-04-20 | 2002-07-02 | Battelle Memorial Institute | Ultrabarrier substrates |
US6866901B2 (en) | 1999-10-25 | 2005-03-15 | Vitex Systems, Inc. | Method for edge sealing barrier films |
US6573652B1 (en) | 1999-10-25 | 2003-06-03 | Battelle Memorial Institute | Encapsulated display devices |
US20070196682A1 (en) | 1999-10-25 | 2007-08-23 | Visser Robert J | Three dimensional multilayer barrier and method of making |
US6623861B2 (en) | 2001-04-16 | 2003-09-23 | Battelle Memorial Institute | Multilayer plastic substrates |
US6529827B1 (en) | 1999-11-01 | 2003-03-04 | Garmin Corporation | GPS device with compass and altimeter and method for displaying navigation information |
US6413284B1 (en) | 1999-11-01 | 2002-07-02 | Polyplus Battery Company | Encapsulated lithium alloy electrodes having barrier layers |
US6271793B1 (en) | 1999-11-05 | 2001-08-07 | International Business Machines Corporation | Radio frequency (RF) transponder (Tag) with composite antenna |
EP1183750A2 (en) | 1999-11-11 | 2002-03-06 | Koninklijke Philips Electronics N.V. | Lithium battery comprising a gel-eletrolyte |
US6340880B1 (en) | 1999-11-11 | 2002-01-22 | Mitsumi Electric Co., Ltd. | Method of protecting a chargeable electric cell |
JP3999424B2 (en) | 1999-11-16 | 2007-10-31 | ローム株式会社 | Terminal board, battery pack provided with terminal board, and method of manufacturing terminal board |
US6797428B1 (en) | 1999-11-23 | 2004-09-28 | Moltech Corporation | Lithium anodes for electrochemical cells |
US6733924B1 (en) | 1999-11-23 | 2004-05-11 | Moltech Corporation | Lithium anodes for electrochemical cells |
US7247408B2 (en) | 1999-11-23 | 2007-07-24 | Sion Power Corporation | Lithium anodes for electrochemical cells |
US6582481B1 (en) | 1999-11-23 | 2003-06-24 | Johnson Research & Development Company, Inc. | Method of producing lithium base cathodes |
US6511516B1 (en) | 2000-02-23 | 2003-01-28 | Johnson Research & Development Co., Inc. | Method and apparatus for producing lithium based cathodes |
US6350353B2 (en) | 1999-11-24 | 2002-02-26 | Applied Materials, Inc. | Alternate steps of IMP and sputtering process to improve sidewall coverage |
US6426863B1 (en) | 1999-11-25 | 2002-07-30 | Lithium Power Technologies, Inc. | Electrochemical capacitor |
US6294288B1 (en) | 1999-12-01 | 2001-09-25 | Valence Technology, Inc. | Battery cell having notched layers |
CA2389347A1 (en) | 1999-12-02 | 2001-06-07 | Tony C. Kowalczyk | Photodefinition of optical devices |
US6344419B1 (en) | 1999-12-03 | 2002-02-05 | Applied Materials, Inc. | Pulsed-mode RF bias for sidewall coverage improvement |
JP3611765B2 (en) | 1999-12-09 | 2005-01-19 | シャープ株式会社 | Secondary battery and electronic device using the same |
JP2001176464A (en) | 1999-12-17 | 2001-06-29 | Sumitomo Electric Ind Ltd | Nonaqueous electrolyte battery |
US6426163B1 (en) | 1999-12-21 | 2002-07-30 | Alcatel | Electrochemical cell |
US6534809B2 (en) | 1999-12-22 | 2003-03-18 | Agilent Technologies, Inc. | Hardmask designs for dry etching FeRAM capacitor stacks |
US6576546B2 (en) | 1999-12-22 | 2003-06-10 | Texas Instruments Incorporated | Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications |
JP2001171812A (en) | 1999-12-22 | 2001-06-26 | Tokyo Gas Co Ltd | Storage facility in rock mass and its execution method |
CN1307376A (en) | 2000-01-27 | 2001-08-08 | 钟馨稼 | Rechargeable solid Cr-F-Li accumulator |
US6372383B1 (en) | 2000-01-31 | 2002-04-16 | Korea Advanced Institute Of Science And Technology | Method for preparing electrodes for Ni/Metal hydride secondary cells using Cu |
US6627056B2 (en) | 2000-02-16 | 2003-09-30 | Applied Materials, Inc. | Method and apparatus for ionized plasma deposition |
TW523615B (en) | 2000-02-17 | 2003-03-11 | L3 Optics Inc | Guided wave optical switch based on an active semiconductor amplifier and a passive optical component |
JP2003523589A (en) | 2000-02-18 | 2003-08-05 | サイパック アクチボラゲット | Methods and devices for identification and authentication |
EP1259992B1 (en) | 2000-02-23 | 2011-10-05 | SRI International | Biologically powered electroactive polymer generators |
TW584905B (en) | 2000-02-25 | 2004-04-21 | Tokyo Electron Ltd | Method and apparatus for depositing films |
US6410471B2 (en) | 2000-03-07 | 2002-06-25 | Shin-Etsu Chemical Co., Ltd. | Method for preparation of sintered body of rare earth oxide |
DE50114283D1 (en) | 2000-03-09 | 2008-10-16 | Isovolta | METHOD FOR PRODUCING A PHOTOVOLTAIC THIN FILM MODULE |
FR2806198B1 (en) | 2000-03-13 | 2003-08-15 | Sagem | RADIO INFORMATION EXCHANGE DEVICE |
US6642895B2 (en) | 2000-03-15 | 2003-11-04 | Asulab S.A. | Multifrequency antenna for instrument with small volume |
JP2001259494A (en) | 2000-03-17 | 2001-09-25 | Matsushita Battery Industrial Co Ltd | Thin film forming device |
EP1328982B1 (en) | 2000-03-24 | 2005-07-20 | Cymbet Corporation | Device enclosures and devices with integrated battery |
US6387563B1 (en) | 2000-03-28 | 2002-05-14 | Johnson Research & Development, Inc. | Method of producing a thin film battery having a protective packaging |
JP4106644B2 (en) | 2000-04-04 | 2008-06-25 | ソニー株式会社 | Battery and manufacturing method thereof |
US6423106B1 (en) | 2000-04-05 | 2002-07-23 | Johnson Research & Development | Method of producing a thin film battery anode |
US6709778B2 (en) | 2000-04-10 | 2004-03-23 | Johnson Electro Mechanical Systems, Llc | Electrochemical conversion system |
GB2361244B (en) | 2000-04-14 | 2004-02-11 | Trikon Holdings Ltd | A method of depositing dielectric |
US6365319B1 (en) | 2000-04-20 | 2002-04-02 | Eastman Kodak Company | Self-contained imaging media comprising opaque laminated support |
US20010052752A1 (en) | 2000-04-25 | 2001-12-20 | Ghosh Amalkumar P. | Thin film encapsulation of organic light emitting diode devices |
KR100341407B1 (en) | 2000-05-01 | 2002-06-22 | 윤덕용 | A Crystall ization method of lithium transition metal oxide thin films by plasma treatm ent |
US6433465B1 (en) | 2000-05-02 | 2002-08-13 | The United States Of America As Represented By The Secretary Of The Navy | Energy-harvesting device using electrostrictive polymers |
US6423776B1 (en) | 2000-05-02 | 2002-07-23 | Honeywell International Inc. | Oxygen scavenging high barrier polyamide compositions for packaging applications |
US6261917B1 (en) | 2000-05-09 | 2001-07-17 | Chartered Semiconductor Manufacturing Ltd. | High-K MOM capacitor |
US6760520B1 (en) | 2000-05-09 | 2004-07-06 | Teralux Corporation | System and method for passively aligning and coupling optical devices |
US6384473B1 (en) | 2000-05-16 | 2002-05-07 | Sandia Corporation | Microelectronic device package with an integral window |
JP4432206B2 (en) | 2000-05-18 | 2010-03-17 | 株式会社ブリヂストン | Method for forming laminated film |
US6436156B1 (en) | 2000-05-25 | 2002-08-20 | The Gillette Company | Zinc/air cell |
EP1160900A3 (en) | 2000-05-26 | 2007-12-12 | Kabushiki Kaisha Riken | Embossed current collector separator for electrochemical fuel cell |
US6284406B1 (en) | 2000-06-09 | 2001-09-04 | Ntk Powerdex, Inc. | IC card with thin battery |
US6524750B1 (en) | 2000-06-17 | 2003-02-25 | Eveready Battery Company, Inc. | Doped titanium oxide additives |
US6432577B1 (en) | 2000-06-29 | 2002-08-13 | Sandia Corporation | Apparatus and method for fabricating a microbattery |
JP2002026173A (en) | 2000-07-10 | 2002-01-25 | Fuji Photo Film Co Ltd | Ic device, substrate, and ic assembling substrate |
US20040247921A1 (en) | 2000-07-18 | 2004-12-09 | Dodsworth Robert S. | Etched dielectric film in hard disk drives |
US6524466B1 (en) | 2000-07-18 | 2003-02-25 | Applied Semiconductor, Inc. | Method and system of preventing fouling and corrosion of biomedical devices and structures |
JP3608507B2 (en) | 2000-07-19 | 2005-01-12 | 住友電気工業株式会社 | Method for producing alkali metal thin film member |
KR100336407B1 (en) | 2000-07-19 | 2002-05-10 | 박호군 | Fabrication Method of Lithium Phosphate Target for High Performance Electrolyte of Thin Film Micro-Battery |
US6506289B2 (en) | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
US6402796B1 (en) | 2000-08-07 | 2002-06-11 | Excellatron Solid State, Llc | Method of producing a thin film battery |
US20020110733A1 (en) | 2000-08-07 | 2002-08-15 | Johnson Lonnie G. | Systems and methods for producing multilayer thin film energy storage devices |
US6538211B2 (en) | 2000-08-15 | 2003-03-25 | World Properties, Inc. | Multi-layer circuits and methods of manufacture thereof |
AU2001281022A1 (en) | 2000-08-16 | 2002-02-25 | Polyplus Battery Company | Layered arrangements of lithium electrodes |
US6572173B2 (en) | 2000-08-28 | 2003-06-03 | Mueller Hermann-Frank | Sun shield for vehicles |
KR100387121B1 (en) | 2000-08-31 | 2003-06-12 | 주식회사 애니셀 | Multi-layered Thin Film Battery Vertically Integrated and Fabrication Method thereof |
US6866963B2 (en) | 2000-09-04 | 2005-03-15 | Samsung Sdi Co., Ltd. | Cathode active material and lithium battery employing the same |
US7056620B2 (en) | 2000-09-07 | 2006-06-06 | Front Edge Technology, Inc. | Thin film battery and method of manufacture |
US6632563B1 (en) | 2000-09-07 | 2003-10-14 | Front Edge Technology, Inc. | Thin film battery and method of manufacture |
EP1364424A2 (en) | 2000-09-14 | 2003-11-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Electrochemically activable layer or film |
US6628876B1 (en) | 2000-09-15 | 2003-09-30 | Triquint Technology Holding Co. | Method for making a planar waveguide |
TW448318B (en) | 2000-09-18 | 2001-08-01 | Nat Science Council | Erbium, Yttrium co-doped Titanium oxide thin film material for planar optical waveguide amplifier |
US20020090758A1 (en) | 2000-09-19 | 2002-07-11 | Silicon Genesis Corporation | Method and resulting device for manufacturing for double gated transistors |
DE10165080B4 (en) | 2000-09-20 | 2015-05-13 | Hitachi Metals, Ltd. | Silicon nitride powder and sintered body and method of making the same and printed circuit board therewith |
US6637916B2 (en) | 2000-10-05 | 2003-10-28 | Muellner Hermann-Frank | Lamp for vehicles |
US6660660B2 (en) | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
JP4532713B2 (en) | 2000-10-11 | 2010-08-25 | 東洋鋼鈑株式会社 | Multilayer metal laminated film and method for producing the same |
KR100389655B1 (en) | 2000-10-14 | 2003-06-27 | 삼성에스디아이 주식회사 | Lithium-ion secondary thin-film battery exhibiting good cycling stability and high ion-conductivity |
US6622049B2 (en) | 2000-10-16 | 2003-09-16 | Remon Medical Technologies Ltd. | Miniature implantable illuminator for photodynamic therapy |
US6488822B1 (en) | 2000-10-20 | 2002-12-03 | Veecoleve, Inc. | Segmented-target ionized physical-vapor deposition apparatus and method of operation |
US6525976B1 (en) | 2000-10-24 | 2003-02-25 | Excellatron Solid State, Llc | Systems and methods for reducing noise in mixed-mode integrated circuits |
JP2002140776A (en) | 2000-11-01 | 2002-05-17 | Matsushita Electric Ind Co Ltd | Detector of human body state and system for confirming human body state |
US6413382B1 (en) | 2000-11-03 | 2002-07-02 | Applied Materials, Inc. | Pulsed sputtering with a small rotating magnetron |
US6863699B1 (en) | 2000-11-03 | 2005-03-08 | Front Edge Technology, Inc. | Sputter deposition of lithium phosphorous oxynitride material |
JP3812324B2 (en) | 2000-11-06 | 2006-08-23 | 日本電気株式会社 | Lithium secondary battery and manufacturing method thereof |
US6494999B1 (en) | 2000-11-09 | 2002-12-17 | Honeywell International Inc. | Magnetron sputtering apparatus with an integral cooling and pressure relieving cathode |
DE60129196T2 (en) | 2000-11-18 | 2007-10-11 | Samsung SDI Co., Ltd., Suwon | Thin-film anode for lithium-containing secondary battery |
KR100389908B1 (en) | 2000-11-18 | 2003-07-04 | 삼성에스디아이 주식회사 | Anode thin film for Lithium secondary battery |
US20020106297A1 (en) | 2000-12-01 | 2002-08-08 | Hitachi Metals, Ltd. | Co-base target and method of producing the same |
NL1016779C2 (en) | 2000-12-02 | 2002-06-04 | Cornelis Johannes Maria V Rijn | Mold, method for manufacturing precision products with the aid of a mold, as well as precision products, in particular microsieves and membrane filters, manufactured with such a mold. |
JP4461656B2 (en) | 2000-12-07 | 2010-05-12 | セイコーエプソン株式会社 | Photoelectric conversion element |
US20020071989A1 (en) | 2000-12-08 | 2002-06-13 | Verma Surrenda K. | Packaging systems and methods for thin film solid state batteries |
US20020091929A1 (en) | 2000-12-19 | 2002-07-11 | Jakob Ehrensvard | Secure digital signing of data |
DE60132809T2 (en) | 2000-12-21 | 2009-02-05 | Sion Power Corp., Tucson | LITHIUM ANODES FOR ELECTROCHEMICAL CELLS |
US6444336B1 (en) | 2000-12-21 | 2002-09-03 | The Regents Of The University Of California | Thin film dielectric composite materials |
US6620545B2 (en) | 2001-01-05 | 2003-09-16 | Visteon Global Technologies, Inc. | ETM based battery |
US6650000B2 (en) | 2001-01-16 | 2003-11-18 | International Business Machines Corporation | Apparatus and method for forming a battery in an integrated circuit |
US6533907B2 (en) | 2001-01-19 | 2003-03-18 | Symmorphix, Inc. | Method of producing amorphous silicon for hard mask and waveguide applications |
US6673716B1 (en) | 2001-01-30 | 2004-01-06 | Novellus Systems, Inc. | Control of the deposition temperature to reduce the via and contact resistance of Ti and TiN deposited using ionized PVD techniques |
US6558836B1 (en) | 2001-02-08 | 2003-05-06 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Structure of thin-film lithium microbatteries |
US6589299B2 (en) | 2001-02-13 | 2003-07-08 | 3M Innovative Properties Company | Method for making electrode |
US20020139662A1 (en) | 2001-02-21 | 2002-10-03 | Lee Brent W. | Thin-film deposition of low conductivity targets using cathodic ARC plasma process |
US20020164441A1 (en) | 2001-03-01 | 2002-11-07 | The University Of Chicago | Packaging for primary and secondary batteries |
US7048400B2 (en) | 2001-03-22 | 2006-05-23 | Lumimove, Inc. | Integrated illumination system |
US7164206B2 (en) | 2001-03-28 | 2007-01-16 | Intel Corporation | Structure in a microelectronic device including a bi-layer for a diffusion barrier and an etch-stop layer |
US6797137B2 (en) | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
US7595109B2 (en) | 2001-04-12 | 2009-09-29 | Eestor, Inc. | Electrical-energy-storage unit (EESU) utilizing ceramic and integrated-circuit technologies for replacement of electrochemical batteries |
US7914755B2 (en) | 2001-04-12 | 2011-03-29 | Eestor, Inc. | Method of preparing ceramic powders using chelate precursors |
US7033406B2 (en) | 2001-04-12 | 2006-04-25 | Eestor, Inc. | Electrical-energy-storage unit (EESU) utilizing ceramic and integrated-circuit technologies for replacement of electrochemical batteries |
US6677070B2 (en) | 2001-04-19 | 2004-01-13 | Hewlett-Packard Development Company, L.P. | Hybrid thin film/thick film solid oxide fuel cell and method of manufacturing the same |
US6782290B2 (en) | 2001-04-27 | 2004-08-24 | Medtronic, Inc. | Implantable medical device with rechargeable thin-film microbattery power source |
US7744735B2 (en) | 2001-05-04 | 2010-06-29 | Tokyo Electron Limited | Ionized PVD with sequential deposition and etching |
US6743488B2 (en) | 2001-05-09 | 2004-06-01 | Cpfilms Inc. | Transparent conductive stratiform coating of indium tin oxide |
JP2002344115A (en) | 2001-05-16 | 2002-11-29 | Matsushita Electric Ind Co Ltd | Method of forming film and method of manufacturing printed board |
US6650942B2 (en) | 2001-05-30 | 2003-11-18 | Medtronic, Inc. | Implantable medical device with dual cell power source |
US6517968B2 (en) | 2001-06-11 | 2003-02-11 | Excellatron Solid State, Llc | Thin lithium film battery |
US6752842B2 (en) | 2001-06-18 | 2004-06-22 | Power Paper Ltd. | Manufacture of flexible thin layer electrochemical cell |
JP3737389B2 (en) | 2001-06-19 | 2006-01-18 | 京セラ株式会社 | battery |
JP3929839B2 (en) | 2001-06-28 | 2007-06-13 | 松下電器産業株式会社 | Batteries and battery packs |
US6768855B1 (en) | 2001-07-05 | 2004-07-27 | Sandia Corporation | Vertically-tapered optical waveguide and optical spot transformer formed therefrom |
US7469558B2 (en) | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
US6758404B2 (en) | 2001-08-03 | 2004-07-06 | General Instrument Corporation | Media cipher smart card |
US6500676B1 (en) | 2001-08-20 | 2002-12-31 | Honeywell International Inc. | Methods and apparatus for depositing magnetic films |
US7335441B2 (en) | 2001-08-20 | 2008-02-26 | Power Paper Ltd. | Thin layer electrochemical cell with self-formed separator |
US7022431B2 (en) | 2001-08-20 | 2006-04-04 | Power Paper Ltd. | Thin layer electrochemical cell with self-formed separator |
DE60228599D1 (en) | 2001-08-24 | 2008-10-09 | Dainippon Printing Co Ltd | MASKING DEVICE FOR FORMING MULTIPLE VACUUM SIDING PAGES |
KR100382767B1 (en) | 2001-08-25 | 2003-05-09 | 삼성에스디아이 주식회사 | Anode thin film for Lithium secondary battery and manufacturing method thereof |
JP4108602B2 (en) | 2001-08-28 | 2008-06-25 | Tdk株式会社 | Composition for thin film capacitor, high dielectric constant insulating film, thin film capacitor, and thin film multilayer capacitor |
EP1359636A1 (en) | 2001-09-03 | 2003-11-05 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing electrochemical device |
US7118825B2 (en) | 2001-09-05 | 2006-10-10 | Omnitek Partners Llc | Conformal power supplies |
US6637906B2 (en) | 2001-09-11 | 2003-10-28 | Recot, Inc. | Electroluminescent flexible film for product packaging |
TW560102B (en) | 2001-09-12 | 2003-11-01 | Itn Energy Systems Inc | Thin-film electrochemical devices on fibrous or ribbon-like substrates and methd for their manufacture and design |
WO2003022564A1 (en) | 2001-09-12 | 2003-03-20 | Itn Energy Systems, Inc. | Apparatus and method for the design and manufacture of multifunctional composite materials with power integration |
US6838209B2 (en) | 2001-09-21 | 2005-01-04 | Eveready Battery Company, Inc. | Flexible thin battery and method of manufacturing same |
CA2406500C (en) | 2001-10-01 | 2008-04-01 | Research In Motion Limited | An over-voltage protection circuit for use in a charging circuit |
US7115516B2 (en) | 2001-10-09 | 2006-10-03 | Applied Materials, Inc. | Method of depositing a material layer |
JP2003124491A (en) | 2001-10-15 | 2003-04-25 | Sharp Corp | Thin film solar cell module |
JP4015835B2 (en) | 2001-10-17 | 2007-11-28 | 松下電器産業株式会社 | Semiconductor memory device |
JP3708474B2 (en) | 2001-10-22 | 2005-10-19 | 松下電器産業株式会社 | Semiconductor device |
FR2831318B1 (en) | 2001-10-22 | 2006-06-09 | Commissariat Energie Atomique | QUICK RECHARGE ENERGY STORAGE DEVICE IN THE FORM OF THIN FILMS |
US6666982B2 (en) | 2001-10-22 | 2003-12-23 | Tokyo Electron Limited | Protection of dielectric window in inductively coupled plasma generation |
US6750156B2 (en) | 2001-10-24 | 2004-06-15 | Applied Materials, Inc. | Method and apparatus for forming an anti-reflective coating on a substrate |
KR100424637B1 (en) | 2001-10-25 | 2004-03-24 | 삼성에스디아이 주식회사 | A thin film for lithium secondary battery and a method of preparing the same |
US7404877B2 (en) | 2001-11-09 | 2008-07-29 | Springworks, Llc | Low temperature zirconia based thermal barrier layer by PVD |
US6805999B2 (en) | 2001-11-13 | 2004-10-19 | Midwest Research Institute | Buried anode lithium thin film battery and process for forming the same |
KR100425585B1 (en) | 2001-11-22 | 2004-04-06 | 한국전자통신연구원 | Lithium polymer secondary battery having crosslinked polymer protective thin film and method for manufacturing the same |
US20030097858A1 (en) | 2001-11-26 | 2003-05-29 | Christof Strohhofer | Silver sensitized erbium ion doped planar waveguide amplifier |
US6830846B2 (en) | 2001-11-29 | 2004-12-14 | 3M Innovative Properties Company | Discontinuous cathode sheet halfcell web |
US20030109903A1 (en) | 2001-12-12 | 2003-06-12 | Epic Biosonics Inc. | Low profile subcutaneous enclosure |
US6683749B2 (en) | 2001-12-19 | 2004-01-27 | Storage Technology Corporation | Magnetic transducer having inverted write element with zero delta in pole tip width |
US6737789B2 (en) | 2002-01-18 | 2004-05-18 | Leon J. Radziemski | Force activated, piezoelectric, electricity generation, storage, conditioning and supply apparatus and methods |
US20040081415A1 (en) | 2002-01-22 | 2004-04-29 | Demaray Richard E. | Planar optical waveguide amplifier with mode size converter |
US20030143853A1 (en) | 2002-01-31 | 2003-07-31 | Celii Francis G. | FeRAM capacitor stack etch |
DE10204138B4 (en) | 2002-02-01 | 2004-05-13 | Robert Bosch Gmbh | communication device |
US20030152829A1 (en) | 2002-02-12 | 2003-08-14 | Ji-Guang Zhang | Thin lithium film battery |
JP3565207B2 (en) | 2002-02-27 | 2004-09-15 | 日産自動車株式会社 | Battery pack |
US6713987B2 (en) | 2002-02-28 | 2004-03-30 | Front Edge Technology, Inc. | Rechargeable battery having permeable anode current collector |
US7081693B2 (en) | 2002-03-07 | 2006-07-25 | Microstrain, Inc. | Energy harvesting for wireless sensor operation and data transmission |
US6884327B2 (en) | 2002-03-16 | 2005-04-26 | Tao Pan | Mode size converter for a planar waveguide |
US20030175142A1 (en) | 2002-03-16 | 2003-09-18 | Vassiliki Milonopoulou | Rare-earth pre-alloyed PVD targets for dielectric planar applications |
US20030174391A1 (en) | 2002-03-16 | 2003-09-18 | Tao Pan | Gain flattened optical amplifier |
US7378356B2 (en) | 2002-03-16 | 2008-05-27 | Springworks, Llc | Biased pulse DC reactive sputtering of oxide films |
TWI283031B (en) | 2002-03-25 | 2007-06-21 | Epistar Corp | Method for integrating compound semiconductor with substrate of high thermal conductivity |
US6885028B2 (en) | 2002-03-25 | 2005-04-26 | Sharp Kabushiki Kaisha | Transistor array and active-matrix substrate |
JP2003282142A (en) | 2002-03-26 | 2003-10-03 | Matsushita Electric Ind Co Ltd | Thin film laminate, thin film battery, capacitor, and manufacturing method and device of thin film laminate |
US6792026B2 (en) | 2002-03-26 | 2004-09-14 | Joseph Reid Henrichs | Folded cavity solid-state laser |
KR100454092B1 (en) | 2002-04-29 | 2004-10-26 | 광주과학기술원 | Fabrication method of cathod film for thin-film battery through rapid thermal annealing method |
US6949389B2 (en) | 2002-05-02 | 2005-09-27 | Osram Opto Semiconductors Gmbh | Encapsulation for organic light emitting diodes devices |
DE10318187B4 (en) | 2002-05-02 | 2010-03-18 | Osram Opto Semiconductors Gmbh | Encapsulation method for organic light emitting diode devices |
JP4043296B2 (en) | 2002-06-13 | 2008-02-06 | 松下電器産業株式会社 | All solid battery |
US6700491B2 (en) | 2002-06-14 | 2004-03-02 | Sensormatic Electronics Corporation | Radio frequency identification tag with thin-film battery for antenna |
US6780208B2 (en) | 2002-06-28 | 2004-08-24 | Hewlett-Packard Development Company, L.P. | Method of making printed battery structures |
US7410730B2 (en) | 2002-07-09 | 2008-08-12 | Oak Ridge Micro-Energy, Inc. | Thin film battery and electrolyte therefor |
US6818356B1 (en) | 2002-07-09 | 2004-11-16 | Oak Ridge Micro-Energy, Inc. | Thin film battery and electrolyte therefor |
US7362659B2 (en) | 2002-07-11 | 2008-04-22 | Action Manufacturing Company | Low current microcontroller circuit |
US6835493B2 (en) | 2002-07-26 | 2004-12-28 | Excellatron Solid State, Llc | Thin film battery |
US6770176B2 (en) | 2002-08-02 | 2004-08-03 | Itn Energy Systems. Inc. | Apparatus and method for fracture absorption layer |
JP2004071305A (en) | 2002-08-05 | 2004-03-04 | Hitachi Maxell Ltd | Non-aqueous electrolyte rechargeable battery |
JP3729164B2 (en) | 2002-08-05 | 2005-12-21 | 日産自動車株式会社 | Automotive battery |
US20080003496A1 (en) | 2002-08-09 | 2008-01-03 | Neudecker Bernd J | Electrochemical apparatus with barrier layer protected substrate |
US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
US6916679B2 (en) | 2002-08-09 | 2005-07-12 | Infinite Power Solutions, Inc. | Methods of and device for encapsulation and termination of electronic devices |
US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
US8535396B2 (en) | 2002-08-09 | 2013-09-17 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8431264B2 (en) | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
KR20040017478A (en) | 2002-08-21 | 2004-02-27 | 한국과학기술원 | Manufacturing Method for Printed Circuit Board and Multiple PCB |
TWI274199B (en) | 2002-08-27 | 2007-02-21 | Symmorphix Inc | Optically coupling into highly uniform waveguides |
US20040048157A1 (en) | 2002-09-11 | 2004-03-11 | Neudecker Bernd J. | Lithium vanadium oxide thin-film battery |
US6994933B1 (en) | 2002-09-16 | 2006-02-07 | Oak Ridge Micro-Energy, Inc. | Long life thin film battery and method therefor |
JP4614625B2 (en) | 2002-09-30 | 2011-01-19 | 三洋電機株式会社 | Method for manufacturing lithium secondary battery |
US7282302B2 (en) | 2002-10-15 | 2007-10-16 | Polyplus Battery Company | Ionically conductive composites for protection of active metal anodes |
JP2004145629A (en) * | 2002-10-24 | 2004-05-20 | Sumitomo Heavy Ind Ltd | Invention evaluation system and invention evaluation program |
JP2004146297A (en) | 2002-10-28 | 2004-05-20 | Matsushita Electric Ind Co Ltd | Solid battery |
US20040081860A1 (en) | 2002-10-29 | 2004-04-29 | Stmicroelectronics, Inc. | Thin-film battery equipment |
JP2004149849A (en) | 2002-10-30 | 2004-05-27 | Hitachi Chem Co Ltd | Method for depositing metal thin film, and substrate with electrode |
US20040085002A1 (en) | 2002-11-05 | 2004-05-06 | Pearce Michael Baker | Method and apparatus for an incidental use piezoelectric energy source with thin-film battery |
JP2004158268A (en) | 2002-11-06 | 2004-06-03 | Sony Corp | Film forming device |
AU2002340506A1 (en) | 2002-11-07 | 2004-06-07 | Fractus, S.A. | Integrated circuit package including miniature antenna |
KR100575329B1 (en) | 2002-11-27 | 2006-05-02 | 마쯔시다덴기산교 가부시키가이샤 | Solid electrolyte and all-solid battery using the same |
KR100682883B1 (en) | 2002-11-27 | 2007-02-15 | 삼성전자주식회사 | Solid electrolyte and battery employing the same |
JP4777593B2 (en) | 2002-11-29 | 2011-09-21 | 株式会社オハラ | Method for producing lithium ion secondary battery |
EP1431422B1 (en) | 2002-12-16 | 2006-12-13 | Basf Aktiengesellschaft | Method for manufacturing lithium |
JP4072049B2 (en) | 2002-12-25 | 2008-04-02 | 京セラ株式会社 | Fuel cell and fuel cell |
TWI261045B (en) | 2002-12-30 | 2006-09-01 | Ind Tech Res Inst | Composite nanofibers and their fabrications |
US6906436B2 (en) | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
US7067197B2 (en) | 2003-01-07 | 2006-06-27 | Cabot Corporation | Powder metallurgy sputtering targets and methods of producing same |
US20040135160A1 (en) | 2003-01-10 | 2004-07-15 | Eastman Kodak Company | OLED device |
IL153895A (en) | 2003-01-12 | 2013-01-31 | Orion Solar Systems Ltd | Solar cell device |
KR100513726B1 (en) | 2003-01-30 | 2005-09-08 | 삼성전자주식회사 | Solid electrolytes, batteries employing the same and method for preparing the same |
DE10304824A1 (en) | 2003-01-31 | 2004-08-12 | Varta Microbattery Gmbh | Thin electronic chip card |
RU2241281C2 (en) | 2003-02-10 | 2004-11-27 | Институт химии и химической технологии СО РАН | Method for producing thin lithium cobaltate films |
JP2004273436A (en) | 2003-02-18 | 2004-09-30 | Matsushita Electric Ind Co Ltd | All solid thin film laminated battery |
CN1756856B (en) | 2003-02-27 | 2011-10-12 | 希莫菲克斯公司 | Dielectric barrier layer films |
US6936407B2 (en) | 2003-02-28 | 2005-08-30 | Osram Opto Semiconductors Gmbh | Thin-film electronic device module |
KR100590376B1 (en) | 2003-03-20 | 2006-06-19 | 마쯔시다덴기산교 가부시키가이샤 | An integrated battery |
CN1274052C (en) | 2003-03-21 | 2006-09-06 | 比亚迪股份有限公司 | Method for producing lithium ion secondary cell |
US6955986B2 (en) | 2003-03-27 | 2005-10-18 | Asm International N.V. | Atomic layer deposition methods for forming a multi-layer adhesion-barrier layer for integrated circuits |
JP2004311073A (en) * | 2003-04-02 | 2004-11-04 | Matsushita Electric Ind Co Ltd | Energy device with overcurrent protection and its manufacturing method |
US20070141468A1 (en) | 2003-04-03 | 2007-06-21 | Jeremy Barker | Electrodes Comprising Mixed Active Particles |
EP1632999B1 (en) | 2003-04-04 | 2011-03-30 | Panasonic Corporation | Battery mounted integrated circuit device |
US20040258984A1 (en) | 2003-04-14 | 2004-12-23 | Massachusetts Institute Of Technology | Integrated thin film batteries on silicon integrated circuits |
KR100508945B1 (en) | 2003-04-17 | 2005-08-17 | 삼성에스디아이 주식회사 | Negative electrode for lithium battery, method of preparing same, and lithium battery comprising same |
US7045246B2 (en) | 2003-04-22 | 2006-05-16 | The Aerospace Corporation | Integrated thin film battery and circuit module |
US7088031B2 (en) | 2003-04-22 | 2006-08-08 | Infinite Power Solutions, Inc. | Method and apparatus for an ambient energy battery or capacitor recharge system |
US6936377B2 (en) | 2003-05-13 | 2005-08-30 | C. Glen Wensley | Card with embedded IC and electrochemical cell |
US7238628B2 (en) | 2003-05-23 | 2007-07-03 | Symmorphix, Inc. | Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides |
US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
US6852139B2 (en) | 2003-07-11 | 2005-02-08 | Excellatron Solid State, Llc | System and method of producing thin-film electrolyte |
US6886240B2 (en) | 2003-07-11 | 2005-05-03 | Excellatron Solid State, Llc | Apparatus for producing thin-film electrolyte |
US20050070097A1 (en) | 2003-09-29 | 2005-03-31 | International Business Machines Corporation | Atomic laminates for diffusion barrier applications |
US7230321B2 (en) | 2003-10-13 | 2007-06-12 | Mccain Joseph | Integrated circuit package with laminated power cell having coplanar electrode |
US20050079418A1 (en) | 2003-10-14 | 2005-04-14 | 3M Innovative Properties Company | In-line deposition processes for thin film battery fabrication |
US7211351B2 (en) | 2003-10-16 | 2007-05-01 | Cymbet Corporation | Lithium/air batteries with LiPON as separator and protective barrier and method |
FR2861218B1 (en) | 2003-10-16 | 2007-04-20 | Commissariat Energie Atomique | LAYER AND METHOD FOR PROTECTING MICROBATTERIES BY A CERAMIC-METAL BILOUCHE |
FR2862436B1 (en) * | 2003-11-14 | 2006-02-10 | Commissariat Energie Atomique | LITHIUM MICRO-BATTERY HAVING A PROTECTIVE ENVELOPE AND METHOD OF MANUFACTURING SUCH A MICRO-BATTERY |
US20050133361A1 (en) | 2003-12-12 | 2005-06-23 | Applied Materials, Inc. | Compensation of spacing between magnetron and sputter target |
EP1544917A1 (en) | 2003-12-15 | 2005-06-22 | Dialog Semiconductor GmbH | Integrated battery pack with lead frame connection |
JP2005196971A (en) | 2003-12-26 | 2005-07-21 | Matsushita Electric Ind Co Ltd | Negative electrode for lithium secondary battery, its manufacturing method, and lithium secondary battery |
KR20070024473A (en) | 2004-01-06 | 2007-03-02 | 사임베트 코퍼레이션 | Layered barrier structure having one or more definable layers and method |
TWI302760B (en) | 2004-01-15 | 2008-11-01 | Lg Chemical Ltd | Electrochemical device comprising aliphatic nitrile compound |
JP3859645B2 (en) | 2004-01-16 | 2006-12-20 | Necラミリオンエナジー株式会社 | Film exterior electrical device |
US7968233B2 (en) | 2004-02-18 | 2011-06-28 | Solicore, Inc. | Lithium inks and electrodes and batteries made therefrom |
US7624499B2 (en) | 2004-02-26 | 2009-12-01 | Hei, Inc. | Flexible circuit having an integrally formed battery |
DE102004010892B3 (en) | 2004-03-06 | 2005-11-24 | Christian-Albrechts-Universität Zu Kiel | Chemically stable solid Li ion conductor of garnet-like crystal structure and high Li ion conductivity useful for batteries, accumulators, supercaps, fuel cells, sensors, windows displays |
JP4418262B2 (en) | 2004-03-12 | 2010-02-17 | 三井造船株式会社 | Substrate / mask fixing device |
JP4150690B2 (en) | 2004-03-29 | 2008-09-17 | 株式会社東芝 | Battery integrated semiconductor element |
US20050255828A1 (en) | 2004-05-03 | 2005-11-17 | Critical Wireless Corporation | Remote terminal unit and remote monitoring and control system |
US7052741B2 (en) | 2004-05-18 | 2006-05-30 | The United States Of America As Represented By The Secretary Of The Navy | Method of fabricating a fibrous structure for use in electrochemical applications |
WO2006014622A2 (en) | 2004-07-19 | 2006-02-09 | Face Bradbury R | Footwear incorporating piezoelectric energy harvesting system |
US7195950B2 (en) | 2004-07-21 | 2007-03-27 | Hewlett-Packard Development Company, L.P. | Forming a plurality of thin-film devices |
US7645246B2 (en) | 2004-08-11 | 2010-01-12 | Omnitek Partners Llc | Method for generating power across a joint of the body during a locomotion cycle |
JP4892180B2 (en) | 2004-08-20 | 2012-03-07 | セイコーインスツル株式会社 | ELECTROCHEMICAL CELL, ITS MANUFACTURING METHOD, AND ITS VISION INSPECTION METHOD |
US8636876B2 (en) | 2004-12-08 | 2014-01-28 | R. Ernest Demaray | Deposition of LiCoO2 |
US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
US7670724B1 (en) | 2005-01-05 | 2010-03-02 | The United States Of America As Represented By The Secretary Of The Army | Alkali-hydroxide modified poly-vinylidene fluoride/polyethylene oxide lithium-air battery |
US20060155545A1 (en) | 2005-01-11 | 2006-07-13 | Hosanna, Inc. | Multi-source powered audio playback system |
KR101101001B1 (en) | 2005-01-19 | 2011-12-29 | 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 | Electric current-producing device having sulfone-based electrolyte |
US8010048B2 (en) | 2005-01-20 | 2011-08-30 | Bae Systems Information And Electronic Systems Integration Inc. | Microradio design, manufacturing method and applications for the use of microradios |
US20090302226A1 (en) | 2005-02-08 | 2009-12-10 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Solid-state neutron and alpha particles detector and methods for manufacturing and use thereof |
DE102005014427B4 (en) | 2005-03-24 | 2008-05-15 | Infineon Technologies Ag | Method for encapsulating a semiconductor device |
EP1713024A1 (en) | 2005-04-14 | 2006-10-18 | Ngk Spark Plug Co., Ltd. | A card, a method of manufacturing the card, and a thin type battery for the card |
US20060237543A1 (en) | 2005-04-20 | 2006-10-26 | Ngk Spark Plug Co., Ltd. | Card, manufacturing method of card, and thin type battery for card |
US20070021156A1 (en) | 2005-07-19 | 2007-01-25 | Hoong Chow T | Compact radio communications device |
US8182661B2 (en) | 2005-07-27 | 2012-05-22 | Applied Materials, Inc. | Controllable target cooling |
US7400253B2 (en) | 2005-08-04 | 2008-07-15 | Mhcmos, Llc | Harvesting ambient radio frequency electromagnetic energy for powering wireless electronic devices, sensors and sensor networks and applications thereof |
CN101313426B (en) | 2005-08-09 | 2012-12-12 | 波利普拉斯电池有限公司 | Compliant seal structures for protected active metal anodes |
DK176361B1 (en) | 2005-08-12 | 2007-09-24 | Gn As | Communication unit with built-in antenna |
US7838133B2 (en) | 2005-09-02 | 2010-11-23 | Springworks, Llc | Deposition of perovskite and other compound ceramic films for dielectric applications |
US7553582B2 (en) | 2005-09-06 | 2009-06-30 | Oak Ridge Micro-Energy, Inc. | Getters for thin film battery hermetic package |
US7202825B2 (en) | 2005-09-15 | 2007-04-10 | Motorola, Inc. | Wireless communication device with integrated battery/antenna system |
US7324341B2 (en) | 2005-09-22 | 2008-01-29 | Delphi Technologies, Inc. | Electronics assembly and heat pipe device |
US7345647B1 (en) | 2005-10-05 | 2008-03-18 | Sandia Corporation | Antenna structure with distributed strip |
US20070187836A1 (en) | 2006-02-15 | 2007-08-16 | Texas Instruments Incorporated | Package on package design a combination of laminate and tape substrate, with back-to-back die combination |
DE102006009789B3 (en) | 2006-03-01 | 2007-10-04 | Infineon Technologies Ag | Method for producing a semiconductor component from a composite board with semiconductor chips and plastic housing composition |
KR101362954B1 (en) | 2006-03-10 | 2014-02-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method for operating the same |
CN101490879B (en) * | 2006-03-16 | 2015-05-06 | 无穷动力解决方案股份有限公司 | Metal film encapsulation |
AU2006340379A1 (en) | 2006-03-22 | 2007-09-27 | Powercast Corporation | Method and apparatus for implementation of a wireless power supply |
US8155712B2 (en) | 2006-03-23 | 2012-04-10 | Sibeam, Inc. | Low power very high-data rate device |
US20070235320A1 (en) | 2006-04-06 | 2007-10-11 | Applied Materials, Inc. | Reactive sputtering chamber with gas distribution tubes |
TWI419397B (en) * | 2006-05-12 | 2013-12-11 | Infinite Power Solutions Inc | Thin film battery on a semiconductor or semiconductor device apparatus and method |
DE102006025671B4 (en) | 2006-06-01 | 2011-12-15 | Infineon Technologies Ag | Process for the preparation of thin integrated semiconductor devices |
US8162230B2 (en) | 2006-10-17 | 2012-04-24 | Powerid Ltd. | Method and circuit for providing RF isolation of a power source from an antenna and an RFID device employing such a circuit |
JP4058456B2 (en) | 2006-10-23 | 2008-03-12 | 富士通株式会社 | Function expansion device for information processing device |
DE102006054309A1 (en) | 2006-11-17 | 2008-05-21 | Dieter Teckhaus | Battery cell with contact element arrangement |
US7466274B2 (en) | 2006-12-20 | 2008-12-16 | Cheng Uei Precision Industry Co., Ltd. | Multi-band antenna |
JP4466668B2 (en) | 2007-03-20 | 2010-05-26 | セイコーエプソン株式会社 | Manufacturing method of semiconductor device |
US7915089B2 (en) | 2007-04-10 | 2011-03-29 | Infineon Technologies Ag | Encapsulation method |
US7862627B2 (en) | 2007-04-27 | 2011-01-04 | Front Edge Technology, Inc. | Thin film battery substrate cutting and fabrication process |
US7848715B2 (en) | 2007-05-03 | 2010-12-07 | Infineon Technologies Ag | Circuit and method |
DE102007030604A1 (en) | 2007-07-02 | 2009-01-08 | Weppner, Werner, Prof. Dr. | Ion conductor with garnet structure |
US8295767B2 (en) | 2007-07-30 | 2012-10-23 | Bae Systems Information And Electronic Systems Integration Inc. | Method of manufacturing a microradio |
US20090092903A1 (en) | 2007-08-29 | 2009-04-09 | Johnson Lonnie G | Low Cost Solid State Rechargeable Battery and Method of Manufacturing Same |
US8634773B2 (en) | 2007-10-12 | 2014-01-21 | Cochlear Limited | Short range communications for body contacting devices |
JP5705549B2 (en) | 2008-01-11 | 2015-04-22 | インフィニット パワー ソリューションズ, インコーポレイテッド | Thin film encapsulation for thin film batteries and other devices |
US8056814B2 (en) | 2008-02-27 | 2011-11-15 | Tagsys Sas | Combined EAS/RFID tag |
TW200952250A (en) | 2008-06-12 | 2009-12-16 | Arima Comm Co Ltd | Portable electronic device having broadcast antenna |
EP2319101B1 (en) | 2008-08-11 | 2015-11-04 | Sapurast Research LLC | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof |
US8389160B2 (en) | 2008-10-07 | 2013-03-05 | Envia Systems, Inc. | Positive electrode materials for lithium ion batteries having a high specific discharge capacity and processes for the synthesis of these materials |
-
2008
- 2008-04-29 US US12/111,388 patent/US8394522B2/en active Active
-
2009
- 2009-04-24 EP EP09739491.0A patent/EP2272120B1/en active Active
- 2009-04-24 WO PCT/US2009/041664 patent/WO2009134689A2/en active Application Filing
- 2009-04-24 KR KR1020107026825A patent/KR101522064B1/en active IP Right Grant
- 2009-04-24 JP JP2011507550A patent/JP6063625B2/en active Active
- 2009-04-24 CN CN200980124956.XA patent/CN102067356B/en active Active
- 2009-04-29 TW TW98114234A patent/TWI469421B/en active
-
2015
- 2015-09-01 JP JP2015172215A patent/JP6155425B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001033651A1 (en) | 1999-11-01 | 2001-05-10 | Polyplus Battery Company | Layered arrangements of lithium electrodes |
US20070202395A1 (en) | 2002-08-09 | 2007-08-30 | Infinite Power Solutions | Metal film encapsulation |
Also Published As
Publication number | Publication date |
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US8394522B2 (en) | 2013-03-12 |
JP2011523163A (en) | 2011-08-04 |
KR101522064B1 (en) | 2015-05-20 |
EP2272120A2 (en) | 2011-01-12 |
WO2009134689A3 (en) | 2010-01-21 |
CN102067356B (en) | 2015-12-09 |
EP2272120B1 (en) | 2015-04-01 |
JP6155425B2 (en) | 2017-07-05 |
KR20110008095A (en) | 2011-01-25 |
CN102067356A (en) | 2011-05-18 |
EP2272120A4 (en) | 2013-01-16 |
JP2016042468A (en) | 2016-03-31 |
US20080261107A1 (en) | 2008-10-23 |
TW201008009A (en) | 2010-02-16 |
TWI469421B (en) | 2015-01-11 |
JP6063625B2 (en) | 2017-01-18 |
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