WO2008140180A3 - In-line virtual-masking method for maskless lithography - Google Patents

In-line virtual-masking method for maskless lithography Download PDF

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Publication number
WO2008140180A3
WO2008140180A3 PCT/KR2008/001234 KR2008001234W WO2008140180A3 WO 2008140180 A3 WO2008140180 A3 WO 2008140180A3 KR 2008001234 W KR2008001234 W KR 2008001234W WO 2008140180 A3 WO2008140180 A3 WO 2008140180A3
Authority
WO
WIPO (PCT)
Prior art keywords
exposure
maskless lithography
overlay
pattern
masking method
Prior art date
Application number
PCT/KR2008/001234
Other languages
French (fr)
Other versions
WO2008140180A2 (en
Inventor
Man Seung Seo
Hae Ryung Kim
Original Assignee
Iamten Co Ltd
Man Seung Seo
Hae Ryung Kim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iamten Co Ltd, Man Seung Seo, Hae Ryung Kim filed Critical Iamten Co Ltd
Publication of WO2008140180A2 publication Critical patent/WO2008140180A2/en
Publication of WO2008140180A3 publication Critical patent/WO2008140180A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention relates to an in-line virtual -masking method for maskless lithography, wherein, in a maskless lithography process by using micromirrors, after receiving inputs for pattern exposure, a base of an overlay intensity basis is obtained by integrating instantaneous overlay intensities in a cell of image corresponding to the micromirror with respect to substrate translation, an exposure virtual mask for the pattern is generated by comparing an occupancy of the pattern per unit base of an overlay intensity basis to a reflection definitive occupancy limit based on intensity information, the exposure virtual mask is compressed then transferred to a micromirror controller connection unit and decompressed at the unit, and the micromirrors are controlled based on the binary reflection information from the decompressed exposure virtual mask, whereby enabling accurate in-line exposure on the substrate.
PCT/KR2008/001234 2007-05-14 2008-03-04 In-line virtual-masking method for maskless lithography WO2008140180A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0046450 2007-05-14
KR1020070046450A KR100868242B1 (en) 2007-05-14 2007-05-14 In-line virtual-masking method for maskless lithography

Publications (2)

Publication Number Publication Date
WO2008140180A2 WO2008140180A2 (en) 2008-11-20
WO2008140180A3 true WO2008140180A3 (en) 2009-03-12

Family

ID=40002743

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/001234 WO2008140180A2 (en) 2007-05-14 2008-03-04 In-line virtual-masking method for maskless lithography

Country Status (2)

Country Link
KR (1) KR100868242B1 (en)
WO (1) WO2008140180A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101654618B1 (en) 2014-12-30 2016-09-06 동명대학교산학협력단 Method of obtaining high resolution triangulated point array structure and high resolution triangulated point array lithography method
CN106647189B (en) * 2017-02-24 2019-07-09 西安电子科技大学 A kind of large area exposure method for maskless scanning photoetching
KR20220079649A (en) * 2019-10-16 2022-06-13 어플라이드 머티어리얼스, 인코포레이티드 Method and lithography system for forming patterns

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6312134B1 (en) * 1996-07-25 2001-11-06 Anvik Corporation Seamless, maskless lithography system using spatial light modulator
US6870554B2 (en) * 2003-01-07 2005-03-22 Anvik Corporation Maskless lithography with multiplexed spatial light modulators
US6958804B2 (en) * 2002-10-25 2005-10-25 Mapper Lithography Ip B.V. Lithography system
US20050237508A1 (en) * 2004-04-27 2005-10-27 Lsi Logic Corporation Process and apparatus for achieving single exposure pattern transfer using maskless optical direct write lithography
KR100655165B1 (en) * 2005-11-28 2007-02-28 서만승 Occupancy based pattern generation method for maskless lithography

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6238852B1 (en) 1999-01-04 2001-05-29 Anvik Corporation Maskless lithography system and method with doubled throughput
JP4381009B2 (en) * 2003-03-12 2009-12-09 新光電気工業株式会社 Pattern drawing apparatus, pattern drawing method, and inspection apparatus
US7063920B2 (en) * 2003-05-16 2006-06-20 Asml Holding, N.V. Method for the generation of variable pitch nested lines and/or contact holes using fixed size pixels for direct-write lithographic systems
US7189498B2 (en) 2004-01-08 2007-03-13 Lsi Logic Corporation Process and apparatus for generating a strong phase shift optical pattern for use in an optical direct write lithography process
US7403265B2 (en) 2005-03-30 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing data filtering
JP2007033882A (en) * 2005-07-27 2007-02-08 Hitachi Via Mechanics Ltd Exposure device and exposure method, and manufacturing method for wiring board

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6312134B1 (en) * 1996-07-25 2001-11-06 Anvik Corporation Seamless, maskless lithography system using spatial light modulator
US6958804B2 (en) * 2002-10-25 2005-10-25 Mapper Lithography Ip B.V. Lithography system
US6870554B2 (en) * 2003-01-07 2005-03-22 Anvik Corporation Maskless lithography with multiplexed spatial light modulators
US20050237508A1 (en) * 2004-04-27 2005-10-27 Lsi Logic Corporation Process and apparatus for achieving single exposure pattern transfer using maskless optical direct write lithography
KR100655165B1 (en) * 2005-11-28 2007-02-28 서만승 Occupancy based pattern generation method for maskless lithography

Also Published As

Publication number Publication date
KR100868242B1 (en) 2008-11-12
WO2008140180A2 (en) 2008-11-20

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