WO2008086494A3 - Photomask inspection and verification by lithography image reconstruction using imaging pupil filters - Google Patents

Photomask inspection and verification by lithography image reconstruction using imaging pupil filters Download PDF

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Publication number
WO2008086494A3
WO2008086494A3 PCT/US2008/050798 US2008050798W WO2008086494A3 WO 2008086494 A3 WO2008086494 A3 WO 2008086494A3 US 2008050798 W US2008050798 W US 2008050798W WO 2008086494 A3 WO2008086494 A3 WO 2008086494A3
Authority
WO
WIPO (PCT)
Prior art keywords
mask
verification
image reconstruction
lithography
photomask inspection
Prior art date
Application number
PCT/US2008/050798
Other languages
French (fr)
Other versions
WO2008086494A2 (en
Inventor
Yalin Xiong
Rui-Fang Shi
Original Assignee
Kla Tencor Tech Corp
Yalin Xiong
Rui-Fang Shi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Tech Corp, Yalin Xiong, Rui-Fang Shi filed Critical Kla Tencor Tech Corp
Priority to JP2009545691A priority Critical patent/JP5645410B2/en
Publication of WO2008086494A2 publication Critical patent/WO2008086494A2/en
Publication of WO2008086494A3 publication Critical patent/WO2008086494A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

A method and tool for generating reconstructed images that model the high NA effects of a lithography tool used to image patterns produced by a mask. Comparison of the reconstructed images with reference images characterize the mask. The method involves providing a mask reticle for inspection. Generating matrix values associated with a high NA corrective filter matrix that characterizes a high NA lithography system used to print from the mask. Illuminating the mask to produce a patterned illumination beam that is filtered with filters associated with the high NA corrective filter matrix elements to obtain a plurality of filtered beams that include raw image data that is processed to obtain a reconstructed image that is further processed and compared with reference images to obtain mask characterization information.
PCT/US2008/050798 2007-01-11 2008-01-10 Photomask inspection and verification by lithography image reconstruction using imaging pupil filters WO2008086494A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009545691A JP5645410B2 (en) 2007-01-11 2008-01-10 Photomask inspection method and apparatus by lithographic image reconstruction using pupil filter

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US88460107P 2007-01-11 2007-01-11
US60/884,601 2007-01-11
US11/669,014 2007-01-30
US11/669,014 US7995832B2 (en) 2007-01-11 2007-01-30 Photomask inspection and verification by lithography image reconstruction using imaging pupil filters

Publications (2)

Publication Number Publication Date
WO2008086494A2 WO2008086494A2 (en) 2008-07-17
WO2008086494A3 true WO2008086494A3 (en) 2008-11-20

Family

ID=39609378

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/050798 WO2008086494A2 (en) 2007-01-11 2008-01-10 Photomask inspection and verification by lithography image reconstruction using imaging pupil filters

Country Status (3)

Country Link
US (1) US7995832B2 (en)
JP (1) JP5645410B2 (en)
WO (1) WO2008086494A2 (en)

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US20110047519A1 (en) * 2009-05-11 2011-02-24 Juan Andres Torres Robles Layout Content Analysis for Source Mask Optimization Acceleration
US8463016B2 (en) * 2010-02-05 2013-06-11 Luminescent Technologies, Inc. Extending the field of view of a mask-inspection image
US8612903B2 (en) 2010-09-14 2013-12-17 Luminescent Technologies, Inc. Technique for repairing a reflective photo-mask
US8555214B2 (en) 2010-09-14 2013-10-08 Luminescent Technologies, Inc. Technique for analyzing a reflective photo-mask
US8386968B2 (en) 2010-11-29 2013-02-26 Luminescent Technologies, Inc. Virtual photo-mask critical-dimension measurement
US8458622B2 (en) 2010-11-29 2013-06-04 Luminescent Technologies, Inc. Photo-mask acceptance technique
DE102010063337B9 (en) * 2010-12-17 2020-05-07 Carl Zeiss Ag Process for mask inspection and process for emulating imaging properties
US9005852B2 (en) 2012-09-10 2015-04-14 Dino Technology Acquisition Llc Technique for repairing a reflective photo-mask
NL2008924A (en) * 2011-06-22 2013-01-02 Asml Netherlands Bv System and method to ensure source and image stability.
US8653454B2 (en) 2011-07-13 2014-02-18 Luminescent Technologies, Inc. Electron-beam image reconstruction
JP6039910B2 (en) * 2012-03-15 2016-12-07 キヤノン株式会社 Generation method, program, and information processing apparatus
US9091935B2 (en) 2013-03-11 2015-07-28 Kla-Tencor Corporation Multistage extreme ultra-violet mask qualification
US9494854B2 (en) 2013-03-14 2016-11-15 Kla-Tencor Corporation Technique for repairing an EUV photo-mask
US9448343B2 (en) 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
US9619878B2 (en) 2013-04-16 2017-04-11 Kla-Tencor Corporation Inspecting high-resolution photolithography masks
US9612541B2 (en) * 2013-08-20 2017-04-04 Kla-Tencor Corporation Qualifying patterns for microlithography
WO2015105360A1 (en) * 2014-01-10 2015-07-16 주식회사 고영테크놀러지 Device and method for measuring three-dimensional shape
US9547892B2 (en) 2014-05-06 2017-01-17 Kla-Tencor Corporation Apparatus and methods for predicting wafer-level defect printability
US9478019B2 (en) 2014-05-06 2016-10-25 Kla-Tencor Corp. Reticle inspection using near-field recovery
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US20160110859A1 (en) * 2014-10-17 2016-04-21 Macronix International Co., Ltd. Inspection method for contact by die to database
US10012599B2 (en) * 2015-04-03 2018-07-03 Kla-Tencor Corp. Optical die to database inspection
DE102015105613B4 (en) * 2015-04-13 2023-08-31 Carl Zeiss Industrielle Messtechnik Gmbh Reflected light illumination for a variable working distance
US10395361B2 (en) 2015-08-10 2019-08-27 Kla-Tencor Corporation Apparatus and methods for inspecting reticles
WO2017027366A1 (en) 2015-08-10 2017-02-16 Kla-Tencor Corporation Apparatus and methods for predicting wafer-level defect printability
US10691863B2 (en) * 2015-10-19 2020-06-23 Asml Netherlands B.V. Method and apparatus to correct for patterning process error
US10719011B2 (en) 2015-10-19 2020-07-21 Asml Netherlands B.V. Method and apparatus to correct for patterning process error
KR102132373B1 (en) 2015-10-19 2020-07-10 에이에스엠엘 네델란즈 비.브이. Method and apparatus for correcting patterning process error
WO2017067748A1 (en) 2015-10-19 2017-04-27 Asml Netherlands B.V. Method and apparatus to reduce effects of nonlinear behavior
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Also Published As

Publication number Publication date
US20080170774A1 (en) 2008-07-17
US7995832B2 (en) 2011-08-09
JP5645410B2 (en) 2014-12-24
WO2008086494A2 (en) 2008-07-17
JP2010515951A (en) 2010-05-13

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