WO2008085451A3 - Switches for shorting during mems etch release - Google Patents

Switches for shorting during mems etch release Download PDF

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Publication number
WO2008085451A3
WO2008085451A3 PCT/US2007/026288 US2007026288W WO2008085451A3 WO 2008085451 A3 WO2008085451 A3 WO 2008085451A3 US 2007026288 W US2007026288 W US 2007026288W WO 2008085451 A3 WO2008085451 A3 WO 2008085451A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
switches
etch release
during mems
shorting during
Prior art date
Application number
PCT/US2007/026288
Other languages
French (fr)
Other versions
WO2008085451A2 (en
Inventor
William J Cummings
Original Assignee
Qualcomm Mems Technologies Inc
William J Cummings
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Mems Technologies Inc, William J Cummings filed Critical Qualcomm Mems Technologies Inc
Priority to EP07866173A priority Critical patent/EP2097349A2/en
Publication of WO2008085451A2 publication Critical patent/WO2008085451A2/en
Publication of WO2008085451A3 publication Critical patent/WO2008085451A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00563—Avoid or control over-etching
    • B81C1/00579—Avoid charge built-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24174—Structurally defined web or sheet [e.g., overall dimension, etc.] including sheet or component perpendicular to plane of web or sheet

Abstract

A MEMS (Microelectromechanical system) device is described. The device includes a first layer (1115) on a substrate, and a sacrificial layer (1130) on or over the first layer (1115), the first sacrificial layer (1130) being configured to be removed in a removal procedure. The device also includes a second layer (1114) on or over the first sacrificial layer (1130), where the second layer (1114) is spaced apart from the first layer (1115), and a shorting element (1150) electrically connecting the first (1115) and second (1114) layers, where at least a portion (1170) of the shorting element is removable in the removal procedure.
PCT/US2007/026288 2006-12-29 2007-12-20 Switches for shorting during mems etch release WO2008085451A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07866173A EP2097349A2 (en) 2006-12-29 2007-12-20 Switches for shorting during mems etch release

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/647,822 US7556981B2 (en) 2006-12-29 2006-12-29 Switches for shorting during MEMS etch release
US11/647,822 2006-12-29

Publications (2)

Publication Number Publication Date
WO2008085451A2 WO2008085451A2 (en) 2008-07-17
WO2008085451A3 true WO2008085451A3 (en) 2008-10-02

Family

ID=39584373

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/026288 WO2008085451A2 (en) 2006-12-29 2007-12-20 Switches for shorting during mems etch release

Country Status (3)

Country Link
US (1) US7556981B2 (en)
EP (1) EP2097349A2 (en)
WO (1) WO2008085451A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7889163B2 (en) * 2004-08-27 2011-02-15 Qualcomm Mems Technologies, Inc. Drive method for MEMS devices
US20080192029A1 (en) * 2007-02-08 2008-08-14 Michael Hugh Anderson Passive circuits for de-multiplexing display inputs
US7977931B2 (en) * 2008-03-18 2011-07-12 Qualcomm Mems Technologies, Inc. Family of current/power-efficient high voltage linear regulator circuit architectures
US7782522B2 (en) 2008-07-17 2010-08-24 Qualcomm Mems Technologies, Inc. Encapsulation methods for interferometric modulator and MEMS devices
CN102918435A (en) 2010-04-16 2013-02-06 弗莱克斯照明第二有限责任公司 Sign comprising a film-based lightguide
CA2796519A1 (en) 2010-04-16 2011-10-20 Flex Lighting Ii, Llc Illumination device comprising a film-based lightguide

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1640330A2 (en) * 2004-09-27 2006-03-29 Idc, Llc Method and device for packaging a substrate
US20060077502A1 (en) * 2004-09-27 2006-04-13 Ming-Hau Tung Methods of fabricating interferometric modulators by selectively removing a material

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954789A (en) 1989-09-28 1990-09-04 Texas Instruments Incorporated Spatial light modulator
US5018256A (en) 1990-06-29 1991-05-28 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
US5099353A (en) 1990-06-29 1992-03-24 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
US5233459A (en) 1991-03-06 1993-08-03 Massachusetts Institute Of Technology Electric display device
JP3171891B2 (en) 1991-11-08 2001-06-04 キヤノン株式会社 Display control device
US6674562B1 (en) 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US5483260A (en) 1993-09-10 1996-01-09 Dell Usa, L.P. Method and apparatus for simplified video monitor control
US6710908B2 (en) 1994-05-05 2004-03-23 Iridigm Display Corporation Controlling micro-electro-mechanical cavities
US6040937A (en) 1994-05-05 2000-03-21 Etalon, Inc. Interferometric modulation
US7550794B2 (en) 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
US7123216B1 (en) 1994-05-05 2006-10-17 Idc, Llc Photonic MEMS and structures
US6680792B2 (en) 1994-05-05 2004-01-20 Iridigm Display Corporation Interferometric modulation of radiation
JP3247799B2 (en) 1994-06-09 2002-01-21 シャープ株式会社 Liquid crystal display panel and inspection method thereof
JPH0822024A (en) 1994-07-05 1996-01-23 Mitsubishi Electric Corp Active matrix substrate and its production
US7471444B2 (en) 1996-12-19 2008-12-30 Idc, Llc Interferometric modulation of radiation
US6750876B1 (en) 1997-11-16 2004-06-15 Ess Technology, Inc. Programmable display controller
KR100253378B1 (en) 1997-12-15 2000-04-15 김영환 Apparatus for displaying output data in asic(application specific ic)
US6323982B1 (en) 1998-05-22 2001-11-27 Texas Instruments Incorporated Yield superstructure for digital micromirror device
US6323834B1 (en) 1998-10-08 2001-11-27 International Business Machines Corporation Micromechanical displays and fabrication method
US6446486B1 (en) 1999-04-26 2002-09-10 Sandia Corporation Micromachine friction test apparatus
NL1015202C2 (en) 1999-05-20 2002-03-26 Nec Corp Active matrix type liquid crystal display device includes adder provided by making scanning line and pixel electrode connected to gate electrode of TFT to overlap via insulating and semiconductor films
WO2003007049A1 (en) 1999-10-05 2003-01-23 Iridigm Display Corporation Photonic mems and structures
US6552840B2 (en) 1999-12-03 2003-04-22 Texas Instruments Incorporated Electrostatic efficiency of micromechanical devices
US6433917B1 (en) 2000-11-22 2002-08-13 Ball Semiconductor, Inc. Light modulation device and system
JP2002221935A (en) * 2000-11-24 2002-08-09 Mitsubishi Electric Corp Display device
JP2002175053A (en) 2000-12-07 2002-06-21 Sony Corp Active matrix display and mobile terminal which uses the same
KR100816336B1 (en) 2001-10-11 2008-03-24 삼성전자주식회사 a thin film transistor array panel and a method of the same
US6700138B2 (en) 2002-02-25 2004-03-02 Silicon Bandwidth, Inc. Modular semiconductor die package and method of manufacturing thereof
US6574033B1 (en) 2002-02-27 2003-06-03 Iridigm Display Corporation Microelectromechanical systems device and method for fabricating same
JP4006304B2 (en) 2002-09-10 2007-11-14 株式会社 日立ディスプレイズ Image display device
US6813060B1 (en) 2002-12-09 2004-11-02 Sandia Corporation Electrical latching of microelectromechanical devices
JP2004004553A (en) 2003-02-10 2004-01-08 Seiko Epson Corp Liquid crystal display panel and driving circuit
US6903860B2 (en) 2003-11-01 2005-06-07 Fusao Ishii Vacuum packaged micromirror arrays and methods of manufacturing the same
US7161728B2 (en) 2003-12-09 2007-01-09 Idc, Llc Area array modulation and lead reduction in interferometric modulators
US7532194B2 (en) 2004-02-03 2009-05-12 Idc, Llc Driver voltage adjuster
US20050285302A1 (en) 2004-06-28 2005-12-29 Doerer Daniel M Mold and process for producing a shoe bottom
US7889163B2 (en) 2004-08-27 2011-02-15 Qualcomm Mems Technologies, Inc. Drive method for MEMS devices
US7843410B2 (en) 2004-09-27 2010-11-30 Qualcomm Mems Technologies, Inc. Method and device for electrically programmable display
US7327510B2 (en) 2004-09-27 2008-02-05 Idc, Llc Process for modifying offset voltage characteristics of an interferometric modulator
US7345805B2 (en) 2004-09-27 2008-03-18 Idc, Llc Interferometric modulator array with integrated MEMS electrical switches
US7289256B2 (en) 2004-09-27 2007-10-30 Idc, Llc Electrical characterization of interferometric modulators

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1640330A2 (en) * 2004-09-27 2006-03-29 Idc, Llc Method and device for packaging a substrate
US20060077502A1 (en) * 2004-09-27 2006-04-13 Ming-Hau Tung Methods of fabricating interferometric modulators by selectively removing a material

Also Published As

Publication number Publication date
WO2008085451A2 (en) 2008-07-17
US20080160251A1 (en) 2008-07-03
EP2097349A2 (en) 2009-09-09
US7556981B2 (en) 2009-07-07

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