WO2006097868A3 - Wavelength-converted semiconductor light-emitting device - Google Patents
Wavelength-converted semiconductor light-emitting device Download PDFInfo
- Publication number
- WO2006097868A3 WO2006097868A3 PCT/IB2006/050706 IB2006050706W WO2006097868A3 WO 2006097868 A3 WO2006097868 A3 WO 2006097868A3 IB 2006050706 W IB2006050706 W IB 2006050706W WO 2006097868 A3 WO2006097868 A3 WO 2006097868A3
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- WIPO (PCT)
- Prior art keywords
- phosphor
- semiconductor structure
- light
- wavelength
- emitting device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020077023442A KR101370324B1 (en) | 2005-03-14 | 2006-03-07 | Wavelength-converted semiconductor light-emitting device |
CN2006800083173A CN101176212B (en) | 2005-03-14 | 2006-03-07 | Wavelength-converted semiconductor light emitting device |
EP06711038.7A EP1861883B8 (en) | 2005-03-14 | 2006-03-07 | Method of manufacturing a wavelength-converting semiconductor light-emitting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/080,801 | 2005-03-14 | ||
US11/080,801 US7341878B2 (en) | 2005-03-14 | 2005-03-14 | Wavelength-converted semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
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WO2006097868A2 WO2006097868A2 (en) | 2006-09-21 |
WO2006097868A3 true WO2006097868A3 (en) | 2007-01-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/IB2006/050706 WO2006097868A2 (en) | 2005-03-14 | 2006-03-07 | Wavelength-converted semiconductor light-emitting device |
Country Status (7)
Country | Link |
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US (3) | US7341878B2 (en) |
EP (1) | EP1861883B8 (en) |
JP (3) | JP5373252B2 (en) |
KR (2) | KR20120107535A (en) |
CN (1) | CN101176212B (en) |
TW (3) | TWI513035B (en) |
WO (1) | WO2006097868A2 (en) |
Families Citing this family (161)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI240434B (en) * | 2003-06-24 | 2005-09-21 | Osram Opto Semiconductors Gmbh | Method to produce semiconductor-chips |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
US20050215041A1 (en) * | 2004-03-23 | 2005-09-29 | Seng William F | Low temperature, long term annealing of nickel contacts to lower interfacial resistance |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
US8748923B2 (en) * | 2005-03-14 | 2014-06-10 | Philips Lumileds Lighting Company Llc | Wavelength-converted semiconductor light emitting device |
TWI248222B (en) * | 2005-05-12 | 2006-01-21 | Univ Nat Central | Light emitting diode and manufacturing method thereof |
DE102005038698A1 (en) * | 2005-07-08 | 2007-01-18 | Tridonic Optoelectronics Gmbh | Optoelectronic components with adhesion promoter |
WO2007018222A1 (en) * | 2005-08-10 | 2007-02-15 | Ube Industries, Ltd. | Substrate for light emitting diode and light emitting diode |
KR100750933B1 (en) * | 2005-08-14 | 2007-08-22 | 삼성전자주식회사 | Top-emitting White Light Emitting Devices Using Nano-structures of Rare-earth Doped Transparent Conducting ZnO And Method Of Manufacturing Thereof |
DE102006004591A1 (en) * | 2005-09-29 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip |
US7514721B2 (en) * | 2005-11-29 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Luminescent ceramic element for a light emitting device |
KR20080106402A (en) | 2006-01-05 | 2008-12-05 | 일루미텍스, 인크. | Separate optical device for directing light from an led |
JP2007258486A (en) * | 2006-03-23 | 2007-10-04 | Toyota Central Res & Dev Lab Inc | White light emitting diode |
EP2057693A1 (en) * | 2006-08-29 | 2009-05-13 | Osram-Sylvania Inc. | Enhanced emission from phosphor-converted leds using interferometric filters |
DE102006046199A1 (en) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Optoelectronic component, has semiconductor layer sequence with active area, which emits electromagnetic radiations with spectrum in operation |
WO2008042351A2 (en) | 2006-10-02 | 2008-04-10 | Illumitex, Inc. | Led system and method |
TW200822788A (en) * | 2006-11-09 | 2008-05-16 | Univ Nat Central | Method of using laser in fabricating GaN device |
CN101536199A (en) * | 2006-11-10 | 2009-09-16 | 皇家飞利浦电子股份有限公司 | Illumination system comprising monolithic ceramic luminescence converter |
US20080111144A1 (en) * | 2006-11-15 | 2008-05-15 | The Regents Of The University Of California | LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS |
US8193020B2 (en) * | 2006-11-15 | 2012-06-05 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
JP2010510655A (en) * | 2006-11-15 | 2010-04-02 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Light emitting diode and laser diode using N-plane GaN, InN and AlN and their alloys |
CA2669228C (en) * | 2006-11-15 | 2014-12-16 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition |
JP5491867B2 (en) | 2006-12-05 | 2014-05-14 | コーニンクレッカ フィリップス エヌ ヴェ | Lighting device, in particular lighting device with luminescent ceramic |
KR100872281B1 (en) | 2006-12-15 | 2008-12-05 | 삼성전기주식회사 | Semiconductor light emitting device having nano-wire structure and method for fabricating the same |
US7902564B2 (en) * | 2006-12-22 | 2011-03-08 | Koninklijke Philips Electronics N.V. | Multi-grain luminescent ceramics for light emitting devices |
US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US8709213B2 (en) | 2007-05-14 | 2014-04-29 | Northwestern University | Composite graphene oxide-polymer laminate and method |
WO2008143829A2 (en) * | 2007-05-14 | 2008-11-27 | Northwestern University | Graphene oxide sheet laminate and method |
US8574681B2 (en) * | 2007-05-14 | 2013-11-05 | Northwestern University | Ceramic composite thin films |
DE102007025092A1 (en) * | 2007-05-30 | 2008-12-04 | Osram Opto Semiconductors Gmbh | LED chip |
US20090039375A1 (en) * | 2007-08-07 | 2009-02-12 | Cree, Inc. | Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same |
US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
US8128249B2 (en) * | 2007-08-28 | 2012-03-06 | Qd Vision, Inc. | Apparatus for selectively backlighting a material |
US7799267B2 (en) * | 2007-09-14 | 2010-09-21 | The Penn State Research Foundation | Method for manufacture of transparent ceramics |
DE102008005344A1 (en) | 2007-09-21 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Radiation-emitting component |
DE102008012316B4 (en) * | 2007-09-28 | 2023-02-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Semiconductor light source with a primary radiation source and a luminescence conversion element |
CN101419323A (en) * | 2007-10-22 | 2009-04-29 | 鸿富锦精密工业(深圳)有限公司 | Mini camera module and method for producing the same |
KR101585239B1 (en) * | 2007-10-25 | 2016-01-22 | 코닌클리케 필립스 엔.브이. | Polarized light emitting device |
US20090108269A1 (en) * | 2007-10-26 | 2009-04-30 | Led Lighting Fixtures, Inc. | Illumination device having one or more lumiphors, and methods of fabricating same |
US9634191B2 (en) * | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
KR100901369B1 (en) * | 2007-11-19 | 2009-06-05 | 일진반도체 주식회사 | White light emitting diode chip and manufacturing method therof |
WO2009072029A2 (en) * | 2007-12-03 | 2009-06-11 | Philips Intellectual Property & Standards Gmbh | Ceramic material for leds with reduced scattering and method of making the same |
KR100998233B1 (en) | 2007-12-03 | 2010-12-07 | 서울반도체 주식회사 | Slim led package |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8167674B2 (en) * | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
EP2240819A1 (en) * | 2008-01-03 | 2010-10-20 | Koninklijke Philips Electronics N.V. | Display device and illumination device |
EP2235428A2 (en) * | 2008-01-22 | 2010-10-06 | Koninklijke Philips Electronics N.V. | Illumination device with led and a transmissive support comprising a luminescent material |
EP2240968A1 (en) | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System and method for emitter layer shaping |
KR101470020B1 (en) * | 2008-03-18 | 2014-12-10 | 엘지이노텍 주식회사 | epitaxial semiconductor thin-film transfer using sandwich-structured wafer bonding and photon-beam |
US7781780B2 (en) * | 2008-03-31 | 2010-08-24 | Bridgelux, Inc. | Light emitting diodes with smooth surface for reflective electrode |
EP2274778B1 (en) * | 2008-04-08 | 2020-08-05 | Signify Holding B.V. | Illumination device with led and a transmissive support comprising a luminescent material |
US20100176751A1 (en) * | 2008-05-20 | 2010-07-15 | Panasonic Corporation | Semiconductor light-emitting device as well as light source device and lighting system including the same |
TWI385773B (en) * | 2008-05-21 | 2013-02-11 | Lefram Technology Corp | Lead frame carrier and method of manufacturing the same |
DE102008039790B4 (en) | 2008-08-26 | 2022-05-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelectronic component and method for its production |
US20120181919A1 (en) * | 2008-08-27 | 2012-07-19 | Osram Sylvania Inc. | Luminescent Ceramic Composite Converter and Method of Making the Same |
DE102008045331A1 (en) | 2008-09-01 | 2010-03-04 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
EP2331869B1 (en) * | 2008-09-23 | 2015-04-22 | Koninklijke Philips N.V. | Illumination device with electrical variable scattering element |
JP5459685B2 (en) * | 2008-09-23 | 2014-04-02 | コーニンクレッカ フィリップス エヌ ヴェ | Lighting device with thermally changing reflective element |
US8287346B2 (en) * | 2008-11-03 | 2012-10-16 | Cfph, Llc | Late game series information change |
US9711688B2 (en) | 2008-12-02 | 2017-07-18 | Koninklijke Philips N.V. | Controlling LED emission pattern using optically active materials |
JP5558483B2 (en) * | 2008-12-02 | 2014-07-23 | コーニンクレッカ フィリップス エヌ ヴェ | LED assembly |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
TWI473246B (en) * | 2008-12-30 | 2015-02-11 | Epistar Corp | A chip level package of light-emitting diode |
US20110316033A1 (en) * | 2009-03-05 | 2011-12-29 | Koito Manufacturing Co., Ltd. | Light emitting module, method of manufacturing the light emitting module, and lamp unit |
US20100244065A1 (en) * | 2009-03-30 | 2010-09-30 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device grown on an etchable substrate |
US8299473B1 (en) * | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US8393745B2 (en) | 2009-04-21 | 2013-03-12 | Koninklijke Philips Electronics N.V. | Illumination device with a phosphor |
DE102009019161A1 (en) * | 2009-04-28 | 2010-11-04 | Osram Opto Semiconductors Gmbh | Light-emitting diode and method for producing a light-emitting diode |
US9480125B2 (en) | 2009-05-15 | 2016-10-25 | Achrolux Inc | Light-emitting structure and a method for fabricating the same |
RU2538100C2 (en) * | 2009-05-28 | 2015-01-10 | Конинклейке Филипс Электроникс Н.В. | Lighting device with housing enclosing light source |
US8921876B2 (en) * | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
JP2010287687A (en) * | 2009-06-10 | 2010-12-24 | Koito Mfg Co Ltd | Light emitting module, and method of manufacturing the same |
US8507304B2 (en) * | 2009-07-17 | 2013-08-13 | Applied Materials, Inc. | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) |
US8148241B2 (en) * | 2009-07-31 | 2012-04-03 | Applied Materials, Inc. | Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films |
US20110027973A1 (en) * | 2009-07-31 | 2011-02-03 | Applied Materials, Inc. | Method of forming led structures |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8580593B2 (en) * | 2009-09-10 | 2013-11-12 | Micron Technology, Inc. | Epitaxial formation structures and associated methods of manufacturing solid state lighting devices |
US8203161B2 (en) * | 2009-11-23 | 2012-06-19 | Koninklijke Philips Electronics N.V. | Wavelength converted semiconductor light emitting device |
DE102009058006B4 (en) * | 2009-12-11 | 2022-03-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelectronic semiconductor component |
JP5047264B2 (en) | 2009-12-22 | 2012-10-10 | 株式会社東芝 | Light emitting device |
JP5050045B2 (en) | 2009-12-22 | 2012-10-17 | 株式会社東芝 | Light emitting device |
US20110195583A1 (en) * | 2010-02-11 | 2011-08-11 | Koninklijke Philips Electronics N.V. | Wavelength converting layer for a light emitting device |
WO2011105858A2 (en) * | 2010-02-25 | 2011-09-01 | (주)라이타이저코리아 | Light emitting diode and method for manufacturing same |
US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
JP4980492B2 (en) * | 2010-03-10 | 2012-07-18 | パナソニック株式会社 | Manufacturing method of LED device |
US8530883B2 (en) * | 2010-03-11 | 2013-09-10 | Light-Based Technologies Incorporated | Manufacture of quantum dot-enabled solid-state light emitters |
JP2011216543A (en) * | 2010-03-31 | 2011-10-27 | Ube Industries Ltd | Light emitting diode, substrate for light emitting diode used therein, and method of manufacturing the same |
RU2528604C2 (en) | 2010-04-08 | 2014-09-20 | Нития Корпорейшн | Light emitting device and method of its manufacturing |
US8154052B2 (en) * | 2010-05-06 | 2012-04-10 | Koninklijke Philips Electronics N.V. | Light emitting device grown on wavelength converting substrate |
JP5343040B2 (en) * | 2010-06-07 | 2013-11-13 | 株式会社東芝 | Semiconductor light emitting device |
EP2407826A1 (en) | 2010-07-08 | 2012-01-18 | Koninklijke Philips Electronics N.V. | Projection system comprising a solid state light source and a luminescent material. |
EP2407825A1 (en) | 2010-07-08 | 2012-01-18 | Koninklijke Philips Electronics N.V. | Projection system comprising a solid state light source and a luminescent material. |
US9722154B2 (en) * | 2010-07-19 | 2017-08-01 | Rensselaer Polytechnic Institute | Full spectrum solid state white light source, method for manufacturing and applications |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
DE102010034923A1 (en) * | 2010-08-20 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Process for the preparation of a composite layer of a luminescence conversion layer and a litter layer |
US8334646B2 (en) | 2010-09-27 | 2012-12-18 | Osram Sylvania Inc. | LED wavelength-coverting plate with microlenses in multiple layers |
US8242684B2 (en) * | 2010-09-27 | 2012-08-14 | Osram Sylvania Inc. | LED wavelength-converting plate with microlenses |
US8829777B2 (en) | 2010-09-27 | 2014-09-09 | Osram Sylvania Inc. | Ceramic wavelength converter and LED light source containing same |
JP2013539229A (en) | 2010-09-29 | 2013-10-17 | コーニンクレッカ フィリップス エヌ ヴェ | Wavelength conversion light emitting device |
TWI446590B (en) | 2010-09-30 | 2014-07-21 | Everlight Electronics Co Ltd | Light emitting diode package structure and manufacturing method thereof |
CN102456777A (en) * | 2010-10-21 | 2012-05-16 | 展晶科技(深圳)有限公司 | Manufacturing method of solid semiconductor |
EP2447746A1 (en) | 2010-10-28 | 2012-05-02 | Koninklijke Philips Electronics N.V. | Lighting device with waveguide plate |
KR101843760B1 (en) | 2010-12-01 | 2018-05-14 | 닛토 덴코 가부시키가이샤 | Emissive ceramic materials having a dopant concentration gradient and methods of making and using the same |
DE102011012298A1 (en) * | 2010-12-28 | 2012-06-28 | Osram Opto Semiconductors Gmbh | Composite substrate, composite substrate semiconductor chip and method of manufacturing composite substrates and semiconductor chips |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
JP5570027B2 (en) * | 2011-02-14 | 2014-08-13 | 大学共同利用機関法人自然科学研究機構 | Translucent polycrystalline material and manufacturing method thereof |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
EP2678404B1 (en) * | 2011-02-24 | 2017-10-18 | Nitto Denko Corporation | Light emitting composite with phosphor components |
DE102011014845B4 (en) * | 2011-03-23 | 2023-05-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Semiconductor light-emitting device and method of manufacturing a semiconductor light-emitting device |
KR101325323B1 (en) * | 2011-03-31 | 2013-11-08 | 한양대학교 산학협력단 | Photonic crystal structure and light emitting diode including the same and method for manufacturing the same |
US8884330B2 (en) | 2011-04-13 | 2014-11-11 | Osram Sylvania Inc. | LED wavelength-converting structure including a thin film structure |
US8492182B2 (en) * | 2011-04-29 | 2013-07-23 | Osram Opto Semiconductors Gmbh | Method for the producing of a light-emitting semiconductor chip, method for the production of a conversion die and light-emitting semiconductor chip |
JP2012243618A (en) * | 2011-05-20 | 2012-12-10 | Stanley Electric Co Ltd | Light source device and lighting device |
CN103503571B (en) * | 2011-06-28 | 2016-03-30 | 松下知识产权经营株式会社 | Organic electroluminescent device |
KR102045349B1 (en) | 2011-08-16 | 2019-11-15 | 쇼오트 아게 | Phosphor compositions and methods of making the same |
DE102011084949B4 (en) * | 2011-10-21 | 2016-03-31 | Osram Gmbh | Converter arrangement, method for producing the converter arrangement and lighting arrangement |
US8931922B2 (en) * | 2012-03-22 | 2015-01-13 | Osram Sylvania Inc. | Ceramic wavelength-conversion plates and light sources including the same |
JP5842701B2 (en) * | 2012-03-27 | 2016-01-13 | 信越化学工業株式会社 | Oxide ceramic fluorescent material diffused with rare earth elements |
US9343613B2 (en) | 2012-03-29 | 2016-05-17 | Koninklijke Philips N.V. | Phosphor in inorganic binder for LED applications |
EP2831931B1 (en) * | 2012-03-29 | 2019-10-02 | Lumileds Holding B.V. | Method for fabricating a luminescent structure |
JP2013211399A (en) * | 2012-03-30 | 2013-10-10 | Toshiba Corp | Semiconductor light-emitting element |
WO2013144798A1 (en) * | 2012-03-30 | 2013-10-03 | Koninklijke Philips N.V. | Optical cavity including a light emitting device and wavelength converting material |
CN104350618B (en) * | 2012-05-31 | 2017-07-25 | 松下知识产权经营株式会社 | Led module |
JP5546589B2 (en) * | 2012-07-13 | 2014-07-09 | 株式会社東芝 | Light emitting device |
JP6003402B2 (en) * | 2012-08-28 | 2016-10-05 | 住友大阪セメント株式会社 | Optical semiconductor light emitting device, lighting fixture, and display device |
TWI474516B (en) | 2012-08-30 | 2015-02-21 | Lextar Electronics Corp | Flip-chip light-emitting diode structure and manufacturing method thereof |
CN103682020A (en) * | 2012-08-31 | 2014-03-26 | 展晶科技(深圳)有限公司 | Manufacture method for LED (Light emitting diode) grain |
DE102012217776A1 (en) * | 2012-09-28 | 2014-06-12 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic component |
JP2014139998A (en) * | 2013-01-21 | 2014-07-31 | Toshiba Corp | Semiconductor light-emitting device |
JP6299478B2 (en) | 2013-06-26 | 2018-03-28 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
JP6045999B2 (en) * | 2013-07-31 | 2016-12-14 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
KR20150044242A (en) * | 2013-10-16 | 2015-04-24 | 일진엘이디(주) | Light emitting diode |
KR20160084858A (en) * | 2013-11-11 | 2016-07-14 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | Therally-assisted cold-weld bonding for epitaxial lift-off process |
CH709020B1 (en) * | 2013-12-24 | 2018-10-31 | Daniel Rytz Dr | Translucent object and its application. |
EP2955573B8 (en) | 2014-04-25 | 2019-03-20 | Delta Electronics, Inc. | Illumination system and wavelength-converting device thereof |
CN105045022B (en) * | 2014-04-25 | 2017-07-04 | 台达电子工业股份有限公司 | Light-source system and its Wavelength converter |
KR102171024B1 (en) * | 2014-06-16 | 2020-10-29 | 삼성전자주식회사 | Method for manufacturing semiconductor light emitting device package |
US20170137328A1 (en) * | 2014-06-18 | 2017-05-18 | Osram Sylvania Inc. | Method of making a ceramic wavelength converter assembly |
JP6165346B2 (en) * | 2014-10-14 | 2017-07-19 | フィリップス ライティング ホールディング ビー ヴィ | Side-emitting luminescence structure and lighting device including the luminescence structure |
KR102252992B1 (en) | 2014-12-12 | 2021-05-20 | 삼성전자주식회사 | Method for manufacturing semiconductor light emitting device package |
WO2016098853A1 (en) * | 2014-12-19 | 2016-06-23 | エルシード株式会社 | Light-emitting element |
JP6834491B2 (en) * | 2015-01-21 | 2021-02-24 | 三菱ケミカル株式会社 | Manufacturing method of sintered phosphor, light emitting device, lighting device, vehicle headlight, and sintered phosphor |
JP5961740B1 (en) * | 2015-04-09 | 2016-08-02 | エルシード株式会社 | Optical device and light emitting element |
US20160336482A1 (en) * | 2015-05-12 | 2016-11-17 | Epistar Corporation | Light-emitting device |
DE102015107586B4 (en) | 2015-05-13 | 2023-10-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Method for producing optoelectronic components and surface-mountable optoelectronic component |
DE112016003944T5 (en) * | 2015-08-28 | 2018-05-24 | Osram Gmbh | Laser activated remote phosphor target and system |
DE102016111442A1 (en) * | 2016-06-22 | 2017-12-28 | Osram Opto Semiconductors Gmbh | Semiconductor light source |
TWI627768B (en) * | 2016-08-11 | 2018-06-21 | 國立中興大學 | Modulation method of light-emitting band of light-emitting diode |
US10319789B2 (en) * | 2016-08-12 | 2019-06-11 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic component and an optoelectronic component |
US10886437B2 (en) | 2016-11-03 | 2021-01-05 | Lumileds Llc | Devices and structures bonded by inorganic coating |
JP6645486B2 (en) * | 2017-02-13 | 2020-02-14 | 日亜化学工業株式会社 | Light emitting device and method of manufacturing the same |
JP6852463B2 (en) * | 2017-03-02 | 2021-03-31 | 信越化学工業株式会社 | Fluorescent lens and light emitting device |
US10128419B1 (en) * | 2017-08-03 | 2018-11-13 | Lumileds Llc | Method of manufacturing a light emitting device |
JP6900571B2 (en) * | 2017-08-03 | 2021-07-07 | ルミレッズ リミテッド ライアビリティ カンパニー | How to manufacture a light emitting device |
DE102017220918A1 (en) * | 2017-11-23 | 2019-05-23 | Osram Gmbh | Conversion of primary light into secondary light by means of a wavelength converter |
US10879431B2 (en) | 2017-12-22 | 2020-12-29 | Lumileds Llc | Wavelength converting layer patterning for LED arrays |
US11348906B2 (en) | 2018-03-21 | 2022-05-31 | Osram Opto Semiconductors Gmbh | Optoelectronic device comprising a phosphor plate and method of manufacturing the optoelectronic device |
US20200161506A1 (en) * | 2018-11-21 | 2020-05-21 | Osram Opto Semiconductors Gmbh | Method for Producing a Ceramic Converter Element, Ceramic Converter Element, and Optoelectronic Component |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0514889A1 (en) * | 1991-05-23 | 1992-11-25 | Canon Kabushiki Kaisha | Light-emitting device, optical recording printer head utilizing said device, and optical printer utilizing said optical recording head |
GB2343549A (en) * | 1998-11-06 | 2000-05-10 | Hewlett Packard Co | LED with silicone encapsulation |
US20010028053A1 (en) * | 1996-09-20 | 2001-10-11 | Klaus Hohn | Wavelength-converting casting composition and light-emitting semiconductor component |
DE20209131U1 (en) * | 2001-08-03 | 2002-10-17 | Osram Opto Semiconductors Gmbh | Hybrid LED |
EP1385215A2 (en) * | 2002-07-08 | 2004-01-28 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
DE10349038A1 (en) * | 2002-10-22 | 2004-05-13 | Osram Opto Semiconductors Gmbh | Light source used as a luminescence conversion-LED has a polycrystalline ceramic body acting completely or partially as a phosphor |
Family Cites Families (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3103607A (en) * | 1963-09-10 | Electroluminescent lamp with ceramic dielectric | ||
US3153166A (en) * | 1960-08-05 | 1964-10-13 | Westinghouse Electric Corp | Electroluminescent device having connections on the base |
JPS6196780A (en) * | 1984-10-17 | 1986-05-15 | Stanley Electric Co Ltd | Coating method of lead chip |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
TW289837B (en) * | 1994-01-18 | 1996-11-01 | Hwelett Packard Co | |
DE4425922B4 (en) * | 1994-07-21 | 2004-03-18 | Siemens Ag | Process for producing a phosphor ceramic by hot pressing |
DE19506323A1 (en) | 1995-02-23 | 1996-08-29 | Siemens Ag | Semiconductor device with roughened semiconductor surface |
DE19629920B4 (en) * | 1995-08-10 | 2006-02-02 | LumiLeds Lighting, U.S., LLC, San Jose | Light-emitting diode with a non-absorbing distributed Bragg reflector |
JPH09129922A (en) * | 1995-10-31 | 1997-05-16 | Sanyo Electric Co Ltd | Light emitting element and its manufacture |
US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
US5783477A (en) * | 1996-09-20 | 1998-07-21 | Hewlett-Packard Company | Method for bonding compounds semiconductor wafers to create an ohmic interface |
US5813752A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters |
US6229160B1 (en) * | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
US5847507A (en) * | 1997-07-14 | 1998-12-08 | Hewlett-Packard Company | Fluorescent dye added to epoxy of light emitting diode lens |
JP3955367B2 (en) * | 1997-09-30 | 2007-08-08 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | Optical semiconductor device and manufacturing method thereof |
US6849472B2 (en) * | 1997-09-30 | 2005-02-01 | Lumileds Lighting U.S., Llc | Nitride semiconductor device with reduced polarization fields |
TW524786B (en) * | 1998-01-23 | 2003-03-21 | Du Pont | Glass composition, castable dielectric composition and tape composition made therewith |
US6252254B1 (en) * | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
US6501091B1 (en) | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
CA2268997C (en) * | 1998-05-05 | 2005-03-22 | National Research Council Of Canada | Quantum dot infrared photodetectors (qdip) and methods of making the same |
JP3486345B2 (en) | 1998-07-14 | 2004-01-13 | 東芝電子エンジニアリング株式会社 | Semiconductor light emitting device |
US5959316A (en) * | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
US6274924B1 (en) * | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
US6373188B1 (en) * | 1998-12-22 | 2002-04-16 | Honeywell International Inc. | Efficient solid-state light emitting device with excited phosphors for producing a visible light output |
US6273589B1 (en) * | 1999-01-29 | 2001-08-14 | Agilent Technologies, Inc. | Solid state illumination source utilizing dichroic reflectors |
US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
US6351069B1 (en) * | 1999-02-18 | 2002-02-26 | Lumileds Lighting, U.S., Llc | Red-deficiency-compensating phosphor LED |
US6680569B2 (en) * | 1999-02-18 | 2004-01-20 | Lumileds Lighting U.S. Llc | Red-deficiency compensating phosphor light emitting device |
US6177359B1 (en) * | 1999-06-07 | 2001-01-23 | Agilent Technologies, Inc. | Method for detaching an epitaxial layer from one substrate and transferring it to another substrate |
US6630691B1 (en) * | 1999-09-27 | 2003-10-07 | Lumileds Lighting U.S., Llc | Light emitting diode device comprising a luminescent substrate that performs phosphor conversion |
US6686691B1 (en) * | 1999-09-27 | 2004-02-03 | Lumileds Lighting, U.S., Llc | Tri-color, white light LED lamps |
KR100683364B1 (en) * | 1999-09-27 | 2007-02-15 | 필립스 루미리즈 라이팅 캄파니 엘엘씨 | A light emitting diode device that produces white light by performing complete phosphor conversion |
US6696703B2 (en) * | 1999-09-27 | 2004-02-24 | Lumileds Lighting U.S., Llc | Thin film phosphor-converted light emitting diode device |
JP2001127346A (en) * | 1999-10-22 | 2001-05-11 | Stanley Electric Co Ltd | Light emitting diode |
US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
JP2001217461A (en) * | 2000-02-04 | 2001-08-10 | Matsushita Electric Ind Co Ltd | Compound light-emitting device |
US6603258B1 (en) * | 2000-04-24 | 2003-08-05 | Lumileds Lighting, U.S. Llc | Light emitting diode device that emits white light |
US6501100B1 (en) * | 2000-05-15 | 2002-12-31 | General Electric Company | White light emitting phosphor blend for LED devices |
US6853663B2 (en) * | 2000-06-02 | 2005-02-08 | Agilent Technologies, Inc. | Efficiency GaN-based light emitting devices |
US6526082B1 (en) * | 2000-06-02 | 2003-02-25 | Lumileds Lighting U.S., Llc | P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction |
JP4207363B2 (en) | 2000-06-08 | 2009-01-14 | 日立電線株式会社 | Light emitting diode |
EP1228540B1 (en) * | 2000-06-29 | 2010-09-29 | Koninklijke Philips Electronics N.V. | Optoelectric element |
JP2002076445A (en) * | 2000-09-01 | 2002-03-15 | Sanken Electric Co Ltd | Semiconductor light emitting device |
US7064355B2 (en) * | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
JP2002141556A (en) * | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | Light emitting diode with improved light extraction efficiency |
US6650044B1 (en) | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
JP2002141559A (en) * | 2000-10-31 | 2002-05-17 | Sanken Electric Co Ltd | Light emitting semiconductor chip assembly and light emitting semiconductor lead frame |
US6525335B1 (en) * | 2000-11-06 | 2003-02-25 | Lumileds Lighting, U.S., Llc | Light emitting semiconductor devices including wafer bonded heterostructures |
JP5110744B2 (en) * | 2000-12-21 | 2012-12-26 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | Light emitting device and manufacturing method thereof |
US6484499B2 (en) * | 2001-01-05 | 2002-11-26 | Caterpillar, Inc | Twin variable nozzle turbine exhaust gas recirculation system |
US6703780B2 (en) * | 2001-01-16 | 2004-03-09 | General Electric Company | Organic electroluminescent device with a ceramic output coupler and method of making the same |
US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
JP2002289912A (en) * | 2001-03-26 | 2002-10-04 | Canon Inc | Planar light-emitting element, planar light-emitting element array, and manufacturing method of the array |
JP2002293644A (en) * | 2001-03-29 | 2002-10-09 | Citizen Watch Co Ltd | Substrate for solar cell and manufacturing method thereof, solar cell using the substrate for solar cell and solar cell clock using solar cell as clock face |
JP4153673B2 (en) * | 2001-03-29 | 2008-09-24 | 株式会社東芝 | Manufacturing method of semiconductor device |
US6417019B1 (en) * | 2001-04-04 | 2002-07-09 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting diode |
US6642652B2 (en) * | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
JP2003017756A (en) * | 2001-06-28 | 2003-01-17 | Toyoda Gosei Co Ltd | Light emitting diode |
JP2003025299A (en) | 2001-07-11 | 2003-01-29 | Hitachi Software Eng Co Ltd | Semiconductor nano particle and its manufacturing method |
TWI226139B (en) * | 2002-01-31 | 2005-01-01 | Osram Opto Semiconductors Gmbh | Method to manufacture a semiconductor-component |
JP4122791B2 (en) * | 2002-02-14 | 2008-07-23 | 松下電工株式会社 | Light emitting device |
JP4158012B2 (en) * | 2002-03-06 | 2008-10-01 | 日本電気硝子株式会社 | Luminescent color conversion member |
JP2003318447A (en) | 2002-04-24 | 2003-11-07 | Toshiba Lighting & Technology Corp | Light emitting diode and led illuminator |
CN100352885C (en) * | 2002-05-06 | 2007-12-05 | 奥斯兰姆奥普托半导体有限责任公司 | Wavelength-converting reactive resinous compound and light-emitting diode component |
EP1508157B1 (en) * | 2002-05-08 | 2011-11-23 | Phoseon Technology, Inc. | High efficiency solid-state light source and methods of use and manufacture |
US6870311B2 (en) * | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
CN100405620C (en) * | 2002-06-13 | 2008-07-23 | 美商克立股份有限公司 | Saturated phosphor solid state emitter |
JP2004200143A (en) * | 2002-08-08 | 2004-07-15 | Matsushita Electric Ind Co Ltd | Light emitting element, its manufacturing method, and display device |
JP2004111514A (en) * | 2002-09-17 | 2004-04-08 | Sanyo Electric Co Ltd | Nitride semiconductor light emitting element and its manufacturing method |
US6717353B1 (en) | 2002-10-14 | 2004-04-06 | Lumileds Lighting U.S., Llc | Phosphor converted light emitting device |
MY149573A (en) * | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
JP4121551B2 (en) * | 2002-10-23 | 2008-07-23 | 信越半導体株式会社 | Light emitting device manufacturing method and light emitting device |
US6900067B2 (en) * | 2002-12-11 | 2005-05-31 | Lumileds Lighting U.S., Llc | Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers |
JP2004253743A (en) * | 2003-02-21 | 2004-09-09 | Nichia Chem Ind Ltd | Light emitting device using substrate containing activator |
US20040173807A1 (en) * | 2003-03-04 | 2004-09-09 | Yongchi Tian | Garnet phosphors, method of making the same, and application to semiconductor LED chips for manufacturing lighting devices |
US6807211B1 (en) * | 2003-05-27 | 2004-10-19 | Eastman Kodak Company | White-light laser |
JP2005019981A (en) * | 2003-06-05 | 2005-01-20 | Matsushita Electric Ind Co Ltd | Fluorescent material, semiconductor light-emitting element and method of fabricating these |
JP4374913B2 (en) | 2003-06-05 | 2009-12-02 | 日亜化学工業株式会社 | Light emitting device |
JP3890416B2 (en) * | 2003-08-19 | 2007-03-07 | 国立大学法人豊橋技術科学大学 | Nitride semiconductor substrate and manufacturing method thereof |
DE10351349A1 (en) * | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Production of a luminescent diode chip applies a radiation decoupling surface and a semiconductor body with an epitaxial-grown sequence of semiconductor layers with an active zone |
DE602005016256D1 (en) * | 2004-05-17 | 2009-10-08 | Mapper Lithography Ip Bv | EXPOSURE SYSTEM WITH A LOADED PARTICLE BEAM |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
US7223998B2 (en) | 2004-09-10 | 2007-05-29 | The Regents Of The University Of California | White, single or multi-color light emitting diodes by recycling guided modes |
US7419839B2 (en) * | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
US7452737B2 (en) * | 2004-11-15 | 2008-11-18 | Philips Lumileds Lighting Company, Llc | Molded lens over LED die |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
-
2005
- 2005-03-14 US US11/080,801 patent/US7341878B2/en active Active
-
2006
- 2006-03-07 KR KR1020127024370A patent/KR20120107535A/en not_active Application Discontinuation
- 2006-03-07 EP EP06711038.7A patent/EP1861883B8/en active Active
- 2006-03-07 KR KR1020077023442A patent/KR101370324B1/en active IP Right Grant
- 2006-03-07 CN CN2006800083173A patent/CN101176212B/en active Active
- 2006-03-07 WO PCT/IB2006/050706 patent/WO2006097868A2/en active Application Filing
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0514889A1 (en) * | 1991-05-23 | 1992-11-25 | Canon Kabushiki Kaisha | Light-emitting device, optical recording printer head utilizing said device, and optical printer utilizing said optical recording head |
US20010028053A1 (en) * | 1996-09-20 | 2001-10-11 | Klaus Hohn | Wavelength-converting casting composition and light-emitting semiconductor component |
GB2343549A (en) * | 1998-11-06 | 2000-05-10 | Hewlett Packard Co | LED with silicone encapsulation |
DE20209131U1 (en) * | 2001-08-03 | 2002-10-17 | Osram Opto Semiconductors Gmbh | Hybrid LED |
EP1385215A2 (en) * | 2002-07-08 | 2004-01-28 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
DE10349038A1 (en) * | 2002-10-22 | 2004-05-13 | Osram Opto Semiconductors Gmbh | Light source used as a luminescence conversion-LED has a polycrystalline ceramic body acting completely or partially as a phosphor |
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JP2010157774A (en) | 2010-07-15 |
US7341878B2 (en) | 2008-03-11 |
TWI513035B (en) | 2015-12-11 |
US20100200886A1 (en) | 2010-08-12 |
JP5744116B2 (en) | 2015-07-01 |
TW201547054A (en) | 2015-12-16 |
CN101176212B (en) | 2010-05-19 |
KR20070116099A (en) | 2007-12-06 |
JP5373252B2 (en) | 2013-12-18 |
JP2006352085A (en) | 2006-12-28 |
EP1861883B8 (en) | 2018-08-15 |
TWI508320B (en) | 2015-11-11 |
EP1861883B1 (en) | 2018-06-13 |
EP1861883A2 (en) | 2007-12-05 |
TW200707797A (en) | 2007-02-16 |
KR101370324B1 (en) | 2014-03-05 |
US8445929B2 (en) | 2013-05-21 |
US20080121919A1 (en) | 2008-05-29 |
JP2013225692A (en) | 2013-10-31 |
TWI622186B (en) | 2018-04-21 |
US20060202105A1 (en) | 2006-09-14 |
WO2006097868A2 (en) | 2006-09-21 |
JP5451502B2 (en) | 2014-03-26 |
CN101176212A (en) | 2008-05-07 |
KR20120107535A (en) | 2012-10-02 |
TW201312787A (en) | 2013-03-16 |
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