WO2005112102A2 - Chemical-enhanced package singulation process - Google Patents
Chemical-enhanced package singulation process Download PDFInfo
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- WO2005112102A2 WO2005112102A2 PCT/US2005/016482 US2005016482W WO2005112102A2 WO 2005112102 A2 WO2005112102 A2 WO 2005112102A2 US 2005016482 W US2005016482 W US 2005016482W WO 2005112102 A2 WO2005112102 A2 WO 2005112102A2
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- metal
- package
- sawing
- inter
- matrix
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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Definitions
- Figure 1 A shows an underside plan view of a conventional quad fiat no-lead (QFN) package utilized to house a semiconductor device.
- Figure IB shows a cross- sectional view taken along line B-B', of the conventional QFN package of Figure 1 A, positioned on a PC board.
- QFN package 100 comprises semiconductor die 102 having electrically active structures fabricated thereon.
- Die 102 is affixed to underlying diepad 104a portion of lead frame 104 by die attach adhesive 106.
- the relative thickness of the die and lead frame shown in Figure IB, and all other drawings of this patent application, is not to scale.
- Lead frame 104 also comprises non-integral pin portions 104b in electrical communication with die 102 through bond wires 108. Bond wires 108 also allow electrical communication between die 102 and diepad 104a.
- Plastic molding 109 encapsulates all but the exposed portions 104a' and 104b' of the lead frame portions 104a and 104b, respectively.
- the term "encapsulation” refers to partial or total enveloping of an element in a surrounding material, typically the metal of the lead frame within a surrounding dielectric material such as plastic.
- Portions of the upper surface of lead frame 104 bear silver (Ag) 105 formed by electroplating.
- the lower surface of lead frame 104 bears a layer of Solder; Lead-Tin, Tin or, Tin Alloys for Lead- free products.
- Both the lower and upper surfaces of lead frame 104 bears a layer of Ni-Pd-Au or Ni-Au 107 formed by electroplating for the pre-plated lead frames for QFN.
- QFN package 100 is secured to traces 110 of underlying PC board 112 by solder 114 that preferably has the rounded shape indicated.
- solder 114 allows electrical signals to pass between lead frame portions 104a and 104b and the underlying traces 110.
- the QFN packages just described are typically Fabricated as part of a larger, continuous metal matrix defining the diepads and leads. Individual packages are then singulated from the matrix by physical means such as sawing to sever the metal connections.
- Fig. IC shows a plane view of a matrix 196 of QFN packages prior to singulation.
- Fig. ID shows an enlarged cross-sectional view showing the diepad and leads of an individual package taken along the line ID-ID 1 of Fig. IC.
- Fig. ID shows that the molded matrix 196 of packages is supported by saw tape 199.
- Fig. IE shows a cross-sectional view of the inter-package region of Fig. IC, taken along the line IE- IE 1 .
- Fig. IE shows that leads 104b of adjacent packages are formed from a common, integral piece of metal known as a tie-bar 198.
- tie-bar 198 Conventionally, the individual packages are singulated from the common matrix by physical sawing along "saw streets" 192 in inter-package regions comprising these common metal tie-bars.
- the line IE- IE' represents such a saw street.
- Fig. IF shows a simplified cross-sectional view along line IE- IE 1 of the package matrix of Fig. IC with pre-plated Ni- Pd-Au lead frames, after an initial step of the conventional sawing package singulation process.
- Initial saw cut 160 is of sufficient width 162 to remove the entirety of the Ni/Pd/Au plating 105 and a portion of the underlying Cu alloy of the tie-bar 198 along the saw street.
- Fig. IG shows a simplified cross-sectional view along line IE-IE' of the package matrix of Fig. IC, after continued sawing during the package singulation process.
- Fig. IG shows complete removal of the Cu alloy of the connecting metal tie-bar, with the adjacent packages held together in the matrix only by common plastic molding 109 supported by underlying saw tape 199. Because the leads 104b of individual packages of Fig. IG no longer share a common piece of metal, they are electrically isolated from one another.
- Fig. 1H shows a simplified cross-sectional view along line IE-IE 1 of the package matrix of Fig. IC, after a final step of the conventional sawing package singulation process.
- sawing is continuous through the plastic mold 109, thereby completely physically separating the individual packages, which now remain bound together only by underlying saw tape 199. Singulated packages 100 may now be plucked from saw tape 199 for mounting within an electronic apparatus.
- the conventional package singulation process illustrated above in Figs. 1C-1H allows for the fabrication of packages by mass-production. However, this conventional singulation process offers a number of potential disadvantages.
- One such disadvantage is relatively low throughput. Specifically, the process of sawing through metal material requires considerable care, to ensure continuing electrical integrity of semiconducting structures housed within the packages. In particular, rapid sawing of the metal can generate residual electrical charge that can short-out or otherwise disrupt the electrical connections carefully fabricated within the packages. Accordingly, steps of the conventional package singulation process that involve the sawing of metal are performed slowly and under carefully controlled conditions, reducing throughput of the overall package singulation process.
- Singulation of individual electronic packages fabricated as part of a common matrix is accomplished by mask patterning and chemical exposure in combination with physical sawing.
- an initial, shallow saw cut into inter-package portions of the matrix exposes underlying metal to subsequent chemical etching steps.
- a separate photoresist mask may be patterned over the matrix to selectively expose metal in inter-package regions to chemical etching.
- An embodiment of a package singulation process in accordance with the present invention comprises, patterning a mask to expose inter-package regions of a common fabricated package matrix, removing metal in the inter-package regions by chemical exposure; and then removing remaining material in the inter-package regions by physical sawing.
- Figure 1A shows an underside plan view of a conventional QFN package.
- Figure IB shows a cross-sectional view of the package of Figure 1 A taken along line B-B'.
- Figure IC shows a simplified plan view of a matrix of packages prior to singulation.
- Figures ID shows a simplified cross-sectional view along line ID-ID' of Fig. IC.
- Figures 1E-H show simplified cross-sectional views along line IE- IE' of Fig. IC, illustrating various successive stages of a conventional package singulation process.
- Figures 2A-C show simplified cross-sectional views along line IE- IE' of Fig. IC, illustrating various successive stages of one embodiment of a package singulation process in accordance with the present invention.
- Figure 3A shows a simplified cross-sectional view of an alternative form of a conventional package.
- Figures 3B-3E shows simplified cross-sectional views illustrating various successive stages of an embodiment of a process in accordance with the present invention for singulation the package of Fig. 3 A.
- Figures 4A-F show simplified cross-sectional views illustrating successive stages of an alternative embodiment of a package singulation process in accordance with the present invention.
- FIG. 2A shows simplified cross-sectional view taken along line 1E-E', of the package matrix of Fig. IC after an initial step of one embodiment of a singulation process in accordance with the present invention.
- an initial shallow saw cut 260 has been made to remove only the Ni- Pd-Au stack 105 lying between adjacent packages.
- This initial sawing step is designated to stop on the underlying copper, a small portion of which may be removed as a result.
- the width of this sawing step is greater than the tie bar, such that adjacent molding is also physically removed during this step.
- Fig. 2B shows a simplified cross-sectional view taken along line 1E-E' of the package matrix of Figs. IC after a second step of an embodiment of a singulation process in accordance with the present invention.
- the matrix is exposed to a wet chemical etchant selective to copper alloy material over the Ni-Pd-Au stack.
- the copper exposed by the initial sawing step of Fig. 2 A is removed by etching, to stop on the Ni of the Ni-Pd-Au stack underlying the copper.
- One such etchant process involves combining sodium, potassium, or ammonium persulfates in an aqueous solution with catalysts such as sulphuric acid. When the persulfate salts dissolve in water, the resulting persulfate ions oxidize copper to cupric ions.
- catalysts such as sulphuric acid
- An alternative system for the selective removal of copper involves performing sulphuric-peroxide etching. Specifically, mixtures of sulphuric acid and hydrogen peroxide with phosphoric acid can also be used as selective Cu etchant, as shown in the following simplified chemical reaction scheme: Cu + H 2 O 2 + H 2 SO 4 ⁇ Cu 2 SO 4 + 2H 2 O
- Fig. 2C shows a simplified cross-sectional view taken along line 1E-E' of the package matrix of Fig. IC after a final step of the singulation process, wherein mechanical sawing is resumed to remove the lower Ni-Pd-Au stack 105 and the underlying plastic molding 109, thereby resulting in full singulation of the packages. Owing to the relative thinness of the Ni-Pd-Au stack 105, this resumed sawing step is relatively brief and does not overly degrade throughput of the package singulation process.
- Figs. 2A-C represents only one specific example in accordance with the present invention, and variations of this process fall within the scope of the present invention.
- the final sawing step depicted in Fig. 2C could actually occur in two separate steps.
- the sawing could resume only long enough to remove the Ni-Pd- Au stack 105.
- the sawing could then be paused, allowing for parallel testing of now- electrically isolated packages in strip form. After such testing, sawing of the remaining molded plastic could be resumed to accomplish complete singulation of the packages.
- Ni-Pd-Au film stack remaining in inter-package regions by sawing
- the remaining Ni-Pd-Au film could be removed by chemical etchant introduced into inter-package regions.
- the Ni- Pd-Au film stack remaining on the upper surface of the package matrix could be protected from etching during this step by a layer of photoresist formed over the entire surface of the matrix prior to the initial sawing step, and then physically removed from inter-package regions by the initial sawing step.
- Figure 3 A shows a simplified cross-sectional view of a package fabricated within a larger matrix. This view is analogous to that shown in Figure IB.
- the exposed leads 304b and diepads 304a of the package 300 of Figure 3A bear plated solder 305 rather than a Ni-Pd-Au film stack.
- the non-exposed surfaces of the Cu alloy leads and diepads of the package of Figure 3 A bear silver plated film 307 specifically patterned in selected locations.
- Figure 3B shows a simplified cross-sectional view of a matrix of packages of the type shown in Figure 3 A, taken along inter-package regions. This view is analogous to that shown in Figure IE.
- Figure 3C shows a first step in an alternative package singulation process, wherein an initial shallow saw cut 360 removes the solder in inter-package regions, exposing the underlying Cu alloy of the tie bar 398.
- Figure 3D shows a simplified cross-sectional view of a successive step in the singulation process, wherein the exposed Cu alloy of the tie bar is removed by chemical etching. At this point in the singulation process, there is no remaining electrical contact between adjacent packages, and they are thus available for strip testing.
- Figure 3E shows a simplified cross-sectional view of a final step in the singulation process, wherein sawing of exclusively remaining molded plastic material is resumed in inter-package regions in order to complete singulation.
- FIG. 3A-E The embodiment shown in Figure 3A-E is specific to singulation of packages having exposed metal portions plated with solder after encapsulation, rather than relying upon a pre-plated metal stack. This may be motivated by the limited availability and higher cost of the Pd material.
- the embodiments utilizing leadframes pre-plated with Ni-Pd- Au do not require the extra solder-plating step, the embodiment of Figures 3A-E is generally less preferred.
- package fabrication process utilizing pre-plated Ni-Pd-Au leadframes offer less toxicity and reduced cost associated with hazardous waste disposal.
- the initial shallow sawing step which removes the surface Ni-Pd-Au film stack, serves to create a mask from the remaining Ni-Pd-Au and plastic mold material not physically removed by the initial sawing.
- a separate masking layer could be deliberately patterned to define inter-package regions for package singulation.
- Figures 4A-F show simplified cross-sectional views of an alternative embodiment of a package singulation process in accordance with the present invention.
- the fabricated package matrix shown in Figures IC and IE are again referenced to provide a starting point for the process.
- a layer of negative photoresist 480 is spin coated over the package matrix.
- photoresist 480 is patterned into a mask 482 by selective exposure to incident radiation followed by development. As a result of this patterning process, inter-package regions 484 are revealed by mask 482.
- the matrix bearing the developed photoresist mask is exposed to a chemical etchant selective to Ni-Pd-Au stack 405 relative to the underlying Cu alloy of the tie bar 498 and the developed photoresist 480.
- Figure 4E shows completion of the singulation process by sawing of the plastic mold 409 remaining between adjacent packages 400. As the physical sawing step of Figure 4F is the only one in the process, the low efficiency and corresponding reduced throughput resulting from metal sawing steps is avoided.
- the photoresist material patterned in the process flow illustrated in connection with Figures 4A-F may be removed after either before or after physical sawing to remove the material remaining between packages.
- the step of removing the photoresist can be accomplished utilizing a variety of techniques.
- the developed photoresist may be stripped by exposure to wet organic cleaner.
- developed photoresist could be removed by exposure to plasma etching, which could cause electrostatic discharge damage to some pins.
- Figures 4A-F utilizes development of the photoresist to define the initial mask for etching the Ni-Pd-Au stack in inter-package regions, this is not required by the present invention.
- the initial pattern of the photoresist could be created with an initial, shallow sawing step into the photoresist in a manner analogous to that shown in Figures 2A and 3C, with removal of the bulk of the metal material of the tie bar still accomplished by etching, rather than by low-efficiency sawing processes.
Abstract
Description
Claims
Priority Applications (2)
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CN2005800149782A CN101292330B (en) | 2004-05-11 | 2005-05-10 | Chemically-enhanced package singulation process |
JP2007513312A JP4599399B2 (en) | 2004-05-11 | 2005-05-10 | Chemically improved package singulation method |
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US10/843,867 US7553700B2 (en) | 2004-05-11 | 2004-05-11 | Chemical-enhanced package singulation process |
US10/843,867 | 2004-05-11 |
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WO2005112102A2 true WO2005112102A2 (en) | 2005-11-24 |
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PCT/US2005/016482 WO2005112102A2 (en) | 2004-05-11 | 2005-05-10 | Chemical-enhanced package singulation process |
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US (1) | US7553700B2 (en) |
JP (1) | JP4599399B2 (en) |
CN (1) | CN101292330B (en) |
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Cited By (1)
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JP2007242643A (en) * | 2006-02-13 | 2007-09-20 | Disco Abrasive Syst Ltd | Device and method of dividing package substrate |
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JP5232394B2 (en) * | 2007-02-28 | 2013-07-10 | ローム株式会社 | Manufacturing method of semiconductor device |
US7932587B2 (en) * | 2007-09-07 | 2011-04-26 | Infineon Technologies Ag | Singulated semiconductor package |
TWI512897B (en) * | 2010-01-18 | 2015-12-11 | Semiconductor Components Ind | Semiconductor die singulation method |
KR20200053096A (en) * | 2018-11-08 | 2020-05-18 | 삼성전자주식회사 | Method of cleaning a semiconductor chip and apparatus for performing the same |
US10937709B2 (en) | 2019-01-11 | 2021-03-02 | Infineon Technologies Ag | Substrates for semiconductor packages |
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US6812552B2 (en) * | 2002-04-29 | 2004-11-02 | Advanced Interconnect Technologies Limited | Partially patterned lead frames and methods of making and using the same in semiconductor packaging |
US20040040856A1 (en) * | 2002-09-03 | 2004-03-04 | Sumitomo Metal Electronics Devices Inc. | Method for making plastic packages |
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CN101292330A (en) | 2008-10-22 |
JP4599399B2 (en) | 2010-12-15 |
US20050255634A1 (en) | 2005-11-17 |
WO2005112102A3 (en) | 2007-12-06 |
CN101292330B (en) | 2010-06-02 |
JP2008509541A (en) | 2008-03-27 |
US7553700B2 (en) | 2009-06-30 |
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