WO2005095679A3 - Sequential lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites - Google Patents
Sequential lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites Download PDFInfo
- Publication number
- WO2005095679A3 WO2005095679A3 PCT/US2005/004480 US2005004480W WO2005095679A3 WO 2005095679 A3 WO2005095679 A3 WO 2005095679A3 US 2005004480 W US2005004480 W US 2005004480W WO 2005095679 A3 WO2005095679 A3 WO 2005095679A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nucleation sites
- stacking fault
- fault nucleation
- structures
- silicon carbide
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Detection And Correction Of Errors (AREA)
- Stacking Of Articles And Auxiliary Devices (AREA)
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05760477A EP1726037B1 (en) | 2004-03-18 | 2005-02-14 | Sequential lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites |
DE602005020911T DE602005020911D1 (en) | 2004-03-18 | 2005-02-14 | SEQUENTIAL LITHOGRAPHIC PROCEDURES FOR REDUCING STACKING ERROR NUCLEATION SITES AND STRUCTURES WITH REDUCED STACKING ERROR NUCLEATION SITES |
AT05760477T ATE466377T1 (en) | 2004-03-18 | 2005-02-14 | SEQUENTIAL LITHOGRAPHIC METHODS FOR REDUCING STACKING DEFECT NUCLATION SITES AND STRUCTURES WITH REDUCED STACKING DEFECT NUCLATION SITES |
CA002554815A CA2554815A1 (en) | 2004-03-18 | 2005-02-14 | Sequential lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites |
JP2007503907A JP5014117B2 (en) | 2004-03-18 | 2005-02-14 | Sequential lithography method for reducing stacking fault nucleation sites and structure with reduced stacking fault nucleation sites |
KR1020067019094A KR101074598B1 (en) | 2004-03-18 | 2006-09-15 | Sequential lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55412304P | 2004-03-18 | 2004-03-18 | |
US60/554,123 | 2004-03-18 | ||
US10/929,911 US7109521B2 (en) | 2004-03-18 | 2004-08-30 | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
US10/929,911 | 2004-08-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005095679A2 WO2005095679A2 (en) | 2005-10-13 |
WO2005095679A3 true WO2005095679A3 (en) | 2005-12-08 |
Family
ID=34972528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/004480 WO2005095679A2 (en) | 2004-03-18 | 2005-02-14 | Sequential lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites |
Country Status (9)
Country | Link |
---|---|
US (2) | US7109521B2 (en) |
EP (1) | EP1726037B1 (en) |
JP (1) | JP5014117B2 (en) |
KR (1) | KR101074598B1 (en) |
AT (1) | ATE466377T1 (en) |
CA (1) | CA2554815A1 (en) |
DE (1) | DE602005020911D1 (en) |
TW (1) | TW200601412A (en) |
WO (1) | WO2005095679A2 (en) |
Families Citing this family (182)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7173285B2 (en) * | 2004-03-18 | 2007-02-06 | Cree, Inc. | Lithographic methods to reduce stacking fault nucleation sites |
US7109521B2 (en) * | 2004-03-18 | 2006-09-19 | Cree, Inc. | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
KR20080106402A (en) | 2006-01-05 | 2008-12-05 | 일루미텍스, 인크. | Separate optical device for directing light from an led |
JP2008071896A (en) * | 2006-09-13 | 2008-03-27 | Nippon Steel Corp | Metal-insulating film-silicon carbide semiconductor structure |
JP2008094700A (en) * | 2006-09-13 | 2008-04-24 | Nippon Steel Corp | Silicon carbide single-crystal epitaxial wafer and method for producing the same |
EP2070123A2 (en) | 2006-10-02 | 2009-06-17 | Illumitex, Inc. | Led system and method |
US8157914B1 (en) | 2007-02-07 | 2012-04-17 | Chien-Min Sung | Substrate surface modifications for compositional gradation of crystalline materials and associated products |
WO2009048997A1 (en) * | 2007-10-12 | 2009-04-16 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Producing epitaxial layers with low basal plane dislocation concentrations |
EP2240968A1 (en) | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System and method for emitter layer shaping |
US9640609B2 (en) * | 2008-02-26 | 2017-05-02 | Cree, Inc. | Double guard ring edge termination for silicon carbide devices |
US8097919B2 (en) | 2008-08-11 | 2012-01-17 | Cree, Inc. | Mesa termination structures for power semiconductor devices including mesa step buffers |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
JP4978637B2 (en) * | 2009-02-12 | 2012-07-18 | 株式会社デンソー | Method for producing silicon carbide single crystal |
DE112010000953B4 (en) * | 2009-03-05 | 2017-08-24 | Mitsubishi Electric Corporation | A method of manufacturing a silicon carbide semiconductor device |
US8637386B2 (en) * | 2009-05-12 | 2014-01-28 | Cree, Inc. | Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
KR20120108912A (en) * | 2009-12-16 | 2012-10-05 | 스미토모덴키고교가부시키가이샤 | Silicon carbide substrate |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
JP2012089612A (en) * | 2010-10-18 | 2012-05-10 | Sumitomo Electric Ind Ltd | Composite substrate having silicon carbide substrate |
US8741778B2 (en) | 2010-12-14 | 2014-06-03 | Applied Materials, Inc. | Uniform dry etch in two stages |
JP2012146921A (en) * | 2011-01-14 | 2012-08-02 | Denso Corp | Silicon carbide semiconductor device |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8803277B2 (en) | 2011-02-10 | 2014-08-12 | Cree, Inc. | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
US8771539B2 (en) | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
JP2012201543A (en) * | 2011-03-25 | 2012-10-22 | Sumitomo Electric Ind Ltd | Silicon carbide substrate |
JP5958949B2 (en) * | 2011-05-26 | 2016-08-02 | 一般財団法人電力中央研究所 | Silicon carbide substrate, silicon carbide wafer, silicon carbide wafer manufacturing method, and silicon carbide semiconductor element |
US8771536B2 (en) | 2011-08-01 | 2014-07-08 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US8679982B2 (en) | 2011-08-26 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
US8679983B2 (en) | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
US8927390B2 (en) | 2011-09-26 | 2015-01-06 | Applied Materials, Inc. | Intrench profile |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
JP2013089741A (en) * | 2011-10-18 | 2013-05-13 | Renesas Electronics Corp | Semiconductor device, semiconductor substrate, semiconductor device manufacturing method, and semiconductor substrate manufacturing method |
WO2013070436A1 (en) | 2011-11-08 | 2013-05-16 | Applied Materials, Inc. | Methods of reducing substrate dislocation during gapfill processing |
WO2013177576A1 (en) * | 2012-05-25 | 2013-11-28 | The Regents Of The University Of California | Method for fabrication of high aspect ratio trenches and formation of nanoscale features therefrom |
KR101926694B1 (en) * | 2012-05-30 | 2018-12-07 | 엘지이노텍 주식회사 | Silicon carbide epi wafer and method of fabricating the same |
KR101926678B1 (en) * | 2012-05-31 | 2018-12-11 | 엘지이노텍 주식회사 | Silicon carbide epi wafer and method of fabricating the same |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US8765574B2 (en) | 2012-11-09 | 2014-07-01 | Applied Materials, Inc. | Dry etch process |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US9064816B2 (en) | 2012-11-30 | 2015-06-23 | Applied Materials, Inc. | Dry-etch for selective oxidation removal |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US8801952B1 (en) | 2013-03-07 | 2014-08-12 | Applied Materials, Inc. | Conformal oxide dry etch |
US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
JP6123408B2 (en) * | 2013-03-26 | 2017-05-10 | 三菱電機株式会社 | Single crystal 4H-SiC substrate and manufacturing method thereof |
US8895449B1 (en) | 2013-05-16 | 2014-11-25 | Applied Materials, Inc. | Delicate dry clean |
US9114438B2 (en) | 2013-05-21 | 2015-08-25 | Applied Materials, Inc. | Copper residue chamber clean |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US8956980B1 (en) | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
US8951429B1 (en) | 2013-10-29 | 2015-02-10 | Applied Materials, Inc. | Tungsten oxide processing |
US9236265B2 (en) | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9117855B2 (en) | 2013-12-04 | 2015-08-25 | Applied Materials, Inc. | Polarity control for remote plasma |
US9263278B2 (en) | 2013-12-17 | 2016-02-16 | Applied Materials, Inc. | Dopant etch selectivity control |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9190293B2 (en) | 2013-12-18 | 2015-11-17 | Applied Materials, Inc. | Even tungsten etch for high aspect ratio trenches |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9136273B1 (en) | 2014-03-21 | 2015-09-15 | Applied Materials, Inc. | Flash gate air gap |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9847289B2 (en) | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9159606B1 (en) | 2014-07-31 | 2015-10-13 | Applied Materials, Inc. | Metal air gap |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9165786B1 (en) | 2014-08-05 | 2015-10-20 | Applied Materials, Inc. | Integrated oxide and nitride recess for better channel contact in 3D architectures |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
DE112016000120T5 (en) | 2015-04-17 | 2017-07-06 | Fuji Electric Co., Ltd. | Semiconductor manufacturing process and SiC substrate |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10896803B2 (en) | 2016-08-19 | 2021-01-19 | The Regents Of The University Of California | Ion beam mill etch depth monitoring with nanometer-scale resolution |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
JP2017122047A (en) * | 2017-03-29 | 2017-07-13 | 三菱電機株式会社 | SINGLE CRYSTAL 4H-SiC SUBSTRATE AND PRODUCTION METHOD THEREOF |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
TWI766433B (en) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | Systems and methods to form airgaps |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
WO2019216684A1 (en) * | 2018-05-11 | 2019-11-14 | 서울바이오시스 주식회사 | Method for manufacturing semiconductor substrate |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030042538A1 (en) * | 2001-08-29 | 2003-03-06 | Rajesh Kumar | Silicon carbide power device having protective diode and method for manufacturing silicon carbide power device having protective diode |
DE10334819A1 (en) * | 2002-08-09 | 2004-02-26 | Denso Corp., Kariya | Silicon carbide semiconductor device used in electronics comprises a silicon carbide substrate having an error-aligned surface with a specified outer axial direction |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4912063A (en) | 1987-10-26 | 1990-03-27 | North Carolina State University | Growth of beta-sic thin films and semiconductor devices fabricated thereon |
US4912064A (en) * | 1987-10-26 | 1990-03-27 | North Carolina State University | Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon |
US4865685A (en) | 1987-11-03 | 1989-09-12 | North Carolina State University | Dry etching of silicon carbide |
US4981551A (en) | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
DE4033355C2 (en) | 1990-10-19 | 1999-08-26 | Siemens Ag | Process for the electrolytic etching of silicon carbide |
US6034001A (en) | 1991-10-16 | 2000-03-07 | Kulite Semiconductor Products, Inc. | Method for etching of silicon carbide semiconductor using selective etching of different conductivity types |
US5679153A (en) | 1994-11-30 | 1997-10-21 | Cree Research, Inc. | Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures |
US5571374A (en) | 1995-10-02 | 1996-11-05 | Motorola | Method of etching silicon carbide |
JPH09148556A (en) * | 1995-11-24 | 1997-06-06 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
US6063186A (en) | 1997-12-17 | 2000-05-16 | Cree, Inc. | Growth of very uniform silicon carbide epitaxial layers |
JPH11251592A (en) | 1998-01-05 | 1999-09-07 | Denso Corp | Carbon silicon semiconductor device |
JP3201475B2 (en) * | 1998-09-14 | 2001-08-20 | 松下電器産業株式会社 | Semiconductor device and method of manufacturing the same |
JP3576432B2 (en) * | 1998-10-10 | 2004-10-13 | Hoya株式会社 | Silicon carbide film and method of manufacturing the same |
US6569250B2 (en) | 2001-01-08 | 2003-05-27 | Cree, Inc. | Gas-driven rotation apparatus and method for forming silicon carbide layers |
JP2003068654A (en) * | 2001-08-27 | 2003-03-07 | Hoya Corp | Production method for compound single crystal |
EP1306890A2 (en) * | 2001-10-25 | 2003-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate and device comprising SiC and method for fabricating the same |
US6849874B2 (en) | 2001-10-26 | 2005-02-01 | Cree, Inc. | Minimizing degradation of SiC bipolar semiconductor devices |
US6896738B2 (en) | 2001-10-30 | 2005-05-24 | Cree, Inc. | Induction heating devices and methods for controllably heating an article |
JP2003178983A (en) * | 2001-12-10 | 2003-06-27 | Toshiba Corp | Silicon carbide substrate and method for manufacturing it, and semiconductor device and method for manufacturing it |
US6797069B2 (en) | 2002-04-08 | 2004-09-28 | Cree, Inc. | Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
JP2004247545A (en) * | 2003-02-14 | 2004-09-02 | Nissan Motor Co Ltd | Semiconductor device and its fabrication process |
US7109521B2 (en) * | 2004-03-18 | 2006-09-19 | Cree, Inc. | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
-
2004
- 2004-08-30 US US10/929,911 patent/US7109521B2/en active Active
-
2005
- 2005-02-14 JP JP2007503907A patent/JP5014117B2/en active Active
- 2005-02-14 CA CA002554815A patent/CA2554815A1/en not_active Abandoned
- 2005-02-14 DE DE602005020911T patent/DE602005020911D1/en active Active
- 2005-02-14 AT AT05760477T patent/ATE466377T1/en not_active IP Right Cessation
- 2005-02-14 EP EP05760477A patent/EP1726037B1/en active Active
- 2005-02-14 WO PCT/US2005/004480 patent/WO2005095679A2/en not_active Application Discontinuation
- 2005-03-07 TW TW094106799A patent/TW200601412A/en unknown
-
2006
- 2006-06-22 US US11/425,954 patent/US7226805B2/en active Active
- 2006-09-15 KR KR1020067019094A patent/KR101074598B1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030042538A1 (en) * | 2001-08-29 | 2003-03-06 | Rajesh Kumar | Silicon carbide power device having protective diode and method for manufacturing silicon carbide power device having protective diode |
DE10334819A1 (en) * | 2002-08-09 | 2004-02-26 | Denso Corp., Kariya | Silicon carbide semiconductor device used in electronics comprises a silicon carbide substrate having an error-aligned surface with a specified outer axial direction |
Non-Patent Citations (4)
Title |
---|
KROTZ G ET AL: "Rapid plasma etching of cubic SiC using NF3/O2 gas mixtures", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 46, no. 1-3, April 1997 (1997-04-01), pages 160 - 163, XP004085303, ISSN: 0921-5107 * |
NIKOLAEV A E ET AL: "SiC liquid-phase epitaxy on patterned substrates", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 166, no. 1, September 1996 (1996-09-01), pages 607 - 611, XP004053417, ISSN: 0022-0248 * |
NORDELL N ET AL: "Equilibrium crystal shapes for 6H AND 4H SiC grown on non-planar substrates", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 61-62, 30 July 1999 (1999-07-30), pages 130 - 134, XP004363318, ISSN: 0921-5107 * |
NORDELL N ET AL: "Homoepitaxy of 6H and 4H SiC on nonplanar substrates", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 72, no. 2, 12 January 1998 (1998-01-12), pages 197 - 199, XP012020203, ISSN: 0003-6951 * |
Also Published As
Publication number | Publication date |
---|---|
KR101074598B1 (en) | 2011-10-17 |
ATE466377T1 (en) | 2010-05-15 |
KR20060128013A (en) | 2006-12-13 |
WO2005095679A2 (en) | 2005-10-13 |
JP5014117B2 (en) | 2012-08-29 |
JP2007529901A (en) | 2007-10-25 |
CA2554815A1 (en) | 2005-10-13 |
US20060243985A1 (en) | 2006-11-02 |
US7226805B2 (en) | 2007-06-05 |
EP1726037A2 (en) | 2006-11-29 |
EP1726037B1 (en) | 2010-04-28 |
US7109521B2 (en) | 2006-09-19 |
DE602005020911D1 (en) | 2010-06-10 |
US20050205872A1 (en) | 2005-09-22 |
TW200601412A (en) | 2006-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005095679A3 (en) | Sequential lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites | |
TW200603211A (en) | Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites | |
TW200618068A (en) | Strained semiconductor devices and method for forming at least a portion thereof | |
CA2392041A1 (en) | Pendeoepitaxial growth of gallium nitride layers on sapphire substrates | |
WO2007098215A8 (en) | Method for growth of semipolar (al,in,ga,b)n optoelectronic devices | |
EP0993048A3 (en) | Nitride semiconductor device and its manufacturing method | |
WO2007053686A3 (en) | Monolithically integrated semiconductor materials and devices | |
WO2008051503A3 (en) | Light-emitter-based devices with lattice-mismatched semiconductor structures | |
TW200741043A (en) | GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device | |
EP1288346A3 (en) | Method of manufacturing compound single crystal | |
EP1577933A3 (en) | Method of manufacturing single-crystal GaN substrate, and single-crystal GaN substrate | |
TW200746430A (en) | Method of manufacturing semiconductor device, and semiconductor device | |
TW200503176A (en) | High-performance CMOS SOI devices on hybrid crystal-oriented substrates | |
EP1065705A3 (en) | Group III nitride compound semiconductor device and producing method therefore | |
EP1197992A4 (en) | Semiconductor wafer and production method therefor | |
WO2007130151A3 (en) | Soi active layer with different surface orientation | |
EP1965416A3 (en) | Free-Standing III-N layers or devices obtained by selective masking of III-N layers during III-N layer growth | |
WO2004060792A3 (en) | Method of forming semiconductor devices through epitaxy | |
WO2004061911A3 (en) | Semiconductor devices with reduced active region defects and unique contacting schemes | |
WO2006060543A3 (en) | Use of cl2 and/or hcl during silicon epitaxial film formation | |
WO2007025062A3 (en) | Photovoltaic template | |
TW200607047A (en) | Technique for forming a substrate having crystalline semiconductor regions of different characteristics | |
EP1396877A3 (en) | Substrate for electronic devices, manufacturing method therefor, and electronic device | |
WO2007044530A3 (en) | Methods and apparatus for epitaxial film formation | |
WO2006081498A3 (en) | Apparatus having a photonic crystal |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DPEN | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2554815 Country of ref document: CA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005760477 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020067019094 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 200580008606.9 Country of ref document: CN |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007503907 Country of ref document: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: DE |
|
WWP | Wipo information: published in national office |
Ref document number: 2005760477 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020067019094 Country of ref document: KR |