WO2005073977A3 - Variable current sinking for coarse/fine programming of non-volatile memory - Google Patents

Variable current sinking for coarse/fine programming of non-volatile memory Download PDF

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Publication number
WO2005073977A3
WO2005073977A3 PCT/US2005/002208 US2005002208W WO2005073977A3 WO 2005073977 A3 WO2005073977 A3 WO 2005073977A3 US 2005002208 W US2005002208 W US 2005002208W WO 2005073977 A3 WO2005073977 A3 WO 2005073977A3
Authority
WO
WIPO (PCT)
Prior art keywords
coarse
volatile memory
fine programming
current sinking
programming process
Prior art date
Application number
PCT/US2005/002208
Other languages
French (fr)
Other versions
WO2005073977A2 (en
Inventor
Daniel C Guterman
Nima Mokhlesi
Yupin Fong
Original Assignee
Sandisk Corp
Daniel C Guterman
Nima Mokhlesi
Yupin Fong
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp, Daniel C Guterman, Nima Mokhlesi, Yupin Fong filed Critical Sandisk Corp
Priority to JP2006551374A priority Critical patent/JP4726807B2/en
Priority to EP05711926A priority patent/EP1711948B1/en
Priority to CN2005800073694A priority patent/CN1930631B/en
Priority to AT05711926T priority patent/ATE527661T1/en
Publication of WO2005073977A2 publication Critical patent/WO2005073977A2/en
Publication of WO2005073977A3 publication Critical patent/WO2005073977A3/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Abstract

A non-volatile memory device is programmed by first performing a coarse programming process and subsequently performing a fine programming process. The coarse/fine programming methodology is enhanced by using an efficient verification scheme that allows some non-volatile memory cells to be verified for the coarse programming process while other non-volatile memory cells are verified for the fine programming process. The fine programming process can be accomplished using current sinking, charge packet metering or other suitable means.
PCT/US2005/002208 2004-01-27 2005-01-25 Variable current sinking for coarse/fine programming of non-volatile memory WO2005073977A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006551374A JP4726807B2 (en) 2004-01-27 2005-01-25 Variable current sinking for non-volatile memory miscellaneous / fine programming
EP05711926A EP1711948B1 (en) 2004-01-27 2005-01-25 Variable current sinking for coarse/fine programming of non-volatile memory
CN2005800073694A CN1930631B (en) 2004-01-27 2005-01-25 Variable current sinking for coarse/fine programming of non-volatile memory
AT05711926T ATE527661T1 (en) 2004-01-27 2005-01-25 VARIABLE CURRENT SINK FOR COARSE/FINE PROGRAMMING OF NON-VOLATILE MEMORY

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/766,786 US7002843B2 (en) 2004-01-27 2004-01-27 Variable current sinking for coarse/fine programming of non-volatile memory
US10/766,786 2004-01-27

Publications (2)

Publication Number Publication Date
WO2005073977A2 WO2005073977A2 (en) 2005-08-11
WO2005073977A3 true WO2005073977A3 (en) 2006-03-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/002208 WO2005073977A2 (en) 2004-01-27 2005-01-25 Variable current sinking for coarse/fine programming of non-volatile memory

Country Status (8)

Country Link
US (2) US7002843B2 (en)
EP (1) EP1711948B1 (en)
JP (1) JP4726807B2 (en)
KR (1) KR100861422B1 (en)
CN (1) CN1930631B (en)
AT (1) ATE527661T1 (en)
TW (1) TWI266325B (en)
WO (1) WO2005073977A2 (en)

Families Citing this family (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7002843B2 (en) * 2004-01-27 2006-02-21 Sandisk Corporation Variable current sinking for coarse/fine programming of non-volatile memory
US7068539B2 (en) * 2004-01-27 2006-06-27 Sandisk Corporation Charge packet metering for coarse/fine programming of non-volatile memory
US7139198B2 (en) * 2004-01-27 2006-11-21 Sandisk Corporation Efficient verification for coarse/fine programming of non-volatile memory
US7020026B2 (en) * 2004-05-05 2006-03-28 Sandisk Corporation Bitline governed approach for program control of non-volatile memory
US7352618B2 (en) * 2004-12-15 2008-04-01 Samsung Electronics Co., Ltd. Multi-level cell memory device and associated read method
US7251167B2 (en) * 2004-12-29 2007-07-31 Macronix International Co., Ltd. Method for programming multi-level nitride read-only memory cells
US7130210B2 (en) * 2005-01-13 2006-10-31 Spansion Llc Multi-level ONO flash program algorithm for threshold width control
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
KR101314306B1 (en) * 2005-10-27 2013-10-02 샌디스크 테크놀로지스, 인코포레이티드 Method for programming of multi-state non-volatile memory using smart verify
US7301817B2 (en) 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
CN103258572B (en) 2006-05-12 2016-12-07 苹果公司 Distortion estimation in storage device and elimination
WO2007132456A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Ltd. Memory device with adaptive capacity
WO2007132452A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Reducing programming error in memory devices
US8156403B2 (en) * 2006-05-12 2012-04-10 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
US8060806B2 (en) 2006-08-27 2011-11-15 Anobit Technologies Ltd. Estimation of non-linear distortion in memory devices
KR100809333B1 (en) * 2006-09-04 2008-03-05 삼성전자주식회사 Write verify method of phase change random access memory device and phase change random access memory device using the same
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US7975192B2 (en) * 2006-10-30 2011-07-05 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7821826B2 (en) 2006-10-30 2010-10-26 Anobit Technologies, Ltd. Memory cell readout using successive approximation
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) * 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7900102B2 (en) * 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US7593263B2 (en) * 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
WO2008079725A2 (en) * 2006-12-21 2008-07-03 Sandisk Corporation Method and system of low voltage programming of non-volatile memory cells
US7623389B2 (en) * 2006-12-21 2009-11-24 Sandisk Corporation System for low voltage programming of non-volatile memory cells
US7944749B2 (en) * 2006-12-21 2011-05-17 Sandisk Corporation Method of low voltage programming of non-volatile memory cells
US8151166B2 (en) * 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7751240B2 (en) 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US8369141B2 (en) * 2007-03-12 2013-02-05 Apple Inc. Adaptive estimation of memory cell read thresholds
US7643348B2 (en) * 2007-04-10 2010-01-05 Sandisk Corporation Predictive programming in non-volatile memory
US8001320B2 (en) * 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
WO2008139441A2 (en) 2007-05-12 2008-11-20 Anobit Technologies Ltd. Memory device with internal signal processing unit
US8234545B2 (en) * 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
ITRM20070273A1 (en) * 2007-05-16 2008-11-17 Micron Technology Inc READING OF NON-VOLATILE MEMORY CELLS AT MUTIPLE LEVEL.
KR100888847B1 (en) * 2007-06-28 2009-03-17 삼성전자주식회사 Nonvolatile semiconductor memory devices and program method thereof
US7599224B2 (en) * 2007-07-03 2009-10-06 Sandisk Corporation Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7508715B2 (en) * 2007-07-03 2009-03-24 Sandisk Corporation Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US7489543B1 (en) * 2007-07-25 2009-02-10 Micron Technology, Inc. Programming multilevel cell memory arrays
US8259497B2 (en) * 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) * 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8527819B2 (en) * 2007-10-19 2013-09-03 Apple Inc. Data storage in analog memory cell arrays having erase failures
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
US8068360B2 (en) * 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
US8270246B2 (en) * 2007-11-13 2012-09-18 Apple Inc. Optimized selection of memory chips in multi-chips memory devices
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) * 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8085586B2 (en) * 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US7916544B2 (en) 2008-01-25 2011-03-29 Micron Technology, Inc. Random telegraph signal noise reduction scheme for semiconductor memories
US8156398B2 (en) * 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) * 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) * 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8059457B2 (en) * 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US7796435B2 (en) * 2008-06-12 2010-09-14 Sandisk Corporation Method for correlated multiple pass programming in nonvolatile memory
US7826271B2 (en) * 2008-06-12 2010-11-02 Sandisk Corporation Nonvolatile memory with index programming and reduced verify
US7800945B2 (en) * 2008-06-12 2010-09-21 Sandisk Corporation Method for index programming and reduced verify in nonvolatile memory
US7813172B2 (en) 2008-06-12 2010-10-12 Sandisk Corporation Nonvolatile memory with correlated multiple pass programming
KR101662621B1 (en) * 2008-07-22 2016-10-05 엘에스아이 코포레이션 Methods and apparatus for programming multiple program values per signal level in flash memories
US7995388B1 (en) 2008-08-05 2011-08-09 Anobit Technologies Ltd. Data storage using modified voltages
US7924613B1 (en) 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US7715235B2 (en) * 2008-08-25 2010-05-11 Sandisk Corporation Non-volatile memory and method for ramp-down programming
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8713330B1 (en) 2008-10-30 2014-04-29 Apple Inc. Data scrambling in memory devices
US8208304B2 (en) * 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US7821840B2 (en) * 2008-11-24 2010-10-26 Spansion Llc Multi-phase programming of multi-level memory
US8174857B1 (en) 2008-12-31 2012-05-08 Anobit Technologies Ltd. Efficient readout schemes for analog memory cell devices using multiple read threshold sets
US8248831B2 (en) * 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8832354B2 (en) * 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8139391B2 (en) 2009-04-03 2012-03-20 Sandisk 3D Llc Multi-bit resistance-switching memory cell
US8270199B2 (en) * 2009-04-03 2012-09-18 Sandisk 3D Llc Cross point non-volatile memory cell
US7978498B2 (en) * 2009-04-03 2011-07-12 Sandisk 3D, Llc Programming non-volatile storage element using current from other element
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
CN102054070B (en) * 2009-10-30 2014-11-26 新思科技(上海)有限公司 Method and device for calculating branch current of direct-current working point of nonlinear circuit
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8677203B1 (en) 2010-01-11 2014-03-18 Apple Inc. Redundant data storage schemes for multi-die memory systems
KR101620025B1 (en) 2010-02-19 2016-05-24 삼성전자주식회사 Memory system and open block managing method thereof
US8233324B2 (en) 2010-03-25 2012-07-31 Sandisk Il Ltd. Simultaneous multi-state read or verify in non-volatile storage
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
KR101635446B1 (en) * 2010-05-25 2016-07-04 삼성전자주식회사 Method of merging blocks for a semiconductor memory device
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8645794B1 (en) 2010-07-31 2014-02-04 Apple Inc. Data storage in analog memory cells using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US9036415B2 (en) 2011-12-21 2015-05-19 Sandisk Technologies Inc. Mitigating variations arising from simultaneous multi-state sensing
US8582381B2 (en) 2012-02-23 2013-11-12 SanDisk Technologies, Inc. Temperature based compensation during verify operations for non-volatile storage
US8885416B2 (en) 2013-01-30 2014-11-11 Sandisk Technologies Inc. Bit line current trip point modulation for reading nonvolatile storage elements
US9947682B2 (en) 2014-11-18 2018-04-17 Sandisk Technologies Llc Three dimensional non-volatile memory with separate source lines
US9548130B2 (en) 2015-04-08 2017-01-17 Sandisk Technologies Llc Non-volatile memory with prior state sensing
US9922719B2 (en) * 2015-06-07 2018-03-20 Sandisk Technologies Llc Multi-VT sensing method by varying bit line voltage
US9911488B2 (en) 2015-10-22 2018-03-06 Sandisk Technologies Llc Three dimensional non-volatile memory with shorting source line/bit line pairs
US9715924B2 (en) 2015-10-22 2017-07-25 Sandisk Technologies Llc Three dimensional non-volatile memory with current sensing programming status
US9711211B2 (en) 2015-10-29 2017-07-18 Sandisk Technologies Llc Dynamic threshold voltage compaction for non-volatile memory
US10910061B2 (en) * 2018-03-14 2021-02-02 Silicon Storage Technology, Inc. Method and apparatus for programming analog neural memory in a deep learning artificial neural network
US11430491B2 (en) 2020-04-30 2022-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Device and method for reading data in memory
CN112201293B (en) * 2020-10-18 2023-12-15 本征信息技术(苏州)有限公司 Programming method of multi-level cell nonvolatile memory
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220531A (en) * 1991-01-02 1993-06-15 Information Storage Devices, Inc. Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback
US6301161B1 (en) * 2000-04-25 2001-10-09 Winbond Electronics Corporation Programming flash memory analog storage using coarse-and-fine sequence
US6344993B1 (en) * 1999-06-30 2002-02-05 Sandisk Corporation Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
US20020024846A1 (en) * 1996-09-30 2002-02-28 Takayuki Kawahara Semiconductor integrated circuit and data processing system
US20020118574A1 (en) * 2001-02-26 2002-08-29 Geoffrey Gongwer Non-volatile memory with improved programming and method therefor
EP1249842A1 (en) * 2001-04-10 2002-10-16 STMicroelectronics S.r.l. Method for programming nonvolatile memory cells with program and verify algorithm using a staircase voltage with varying step amplitude

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US57598A (en) * 1866-08-28 Improvement in ladies fans
US5313421A (en) 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5712180A (en) 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
KR950000273B1 (en) * 1992-02-21 1995-01-12 삼성전자 주식회사 Non-volatile semiconductor memory device and optimal write method
US5412601A (en) 1992-08-31 1995-05-02 Nippon Steel Corporation Non-volatile semiconductor memory device capable of storing multi-value data in each memory cell
KR0169267B1 (en) 1993-09-21 1999-02-01 사토 후미오 Nonvolatile semiconductor memory device
JP3476952B2 (en) 1994-03-15 2003-12-10 株式会社東芝 Nonvolatile semiconductor memory device
JP3730272B2 (en) 1994-09-17 2005-12-21 株式会社東芝 Nonvolatile semiconductor memory device
DE69421925T2 (en) 1994-09-30 2000-03-16 St Microelectronics Srl Storage device with error detection and correction and method for writing and erasing the storage device
JPH09251782A (en) 1996-03-14 1997-09-22 Fujitsu Ltd Semiconductor storage device
US5712815A (en) 1996-04-22 1998-01-27 Advanced Micro Devices, Inc. Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells
JP3679544B2 (en) * 1997-03-28 2005-08-03 三洋電機株式会社 Nonvolatile semiconductor memory device
JP3481817B2 (en) 1997-04-07 2003-12-22 株式会社東芝 Semiconductor storage device
US5926409A (en) 1997-09-05 1999-07-20 Information Storage Devices, Inc. Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application
JP3906545B2 (en) * 1998-02-03 2007-04-18 ソニー株式会社 Nonvolatile semiconductor memory device
JPH11265587A (en) * 1998-03-17 1999-09-28 Sanyo Electric Co Ltd Non-volatile semiconductor memory device
JP2000040382A (en) 1998-07-23 2000-02-08 Sony Corp Non-volatile semiconductor memory device and data write method thereof
JP2001067884A (en) 1999-08-31 2001-03-16 Hitachi Ltd Nonvolatile semiconductor memory device
JP3922516B2 (en) 2000-09-28 2007-05-30 株式会社ルネサステクノロジ Nonvolatile memory and writing method of nonvolatile memory
JP3631463B2 (en) 2001-12-27 2005-03-23 株式会社東芝 Nonvolatile semiconductor memory device
US6424566B1 (en) 2001-02-08 2002-07-23 Advanced Micro Devices, Inc. Program reconnaissance to eliminate variations in vt distributions of multi-level cell flash memory designs
US6532172B2 (en) 2001-05-31 2003-03-11 Sandisk Corporation Steering gate and bit line segmentation in non-volatile memories
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6597603B2 (en) 2001-11-06 2003-07-22 Atmel Corporation Dual mode high voltage power supply for providing increased speed in programming during testing of low voltage non-volatile memories
US6529412B1 (en) 2002-01-16 2003-03-04 Advanced Micro Devices, Inc. Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit precharge
US6856551B2 (en) * 2003-02-06 2005-02-15 Sandisk Corporation System and method for programming cells in non-volatile integrated memory devices
US7002843B2 (en) 2004-01-27 2006-02-21 Sandisk Corporation Variable current sinking for coarse/fine programming of non-volatile memory

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220531A (en) * 1991-01-02 1993-06-15 Information Storage Devices, Inc. Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback
US20020024846A1 (en) * 1996-09-30 2002-02-28 Takayuki Kawahara Semiconductor integrated circuit and data processing system
US6344993B1 (en) * 1999-06-30 2002-02-05 Sandisk Corporation Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
US6301161B1 (en) * 2000-04-25 2001-10-09 Winbond Electronics Corporation Programming flash memory analog storage using coarse-and-fine sequence
US20020118574A1 (en) * 2001-02-26 2002-08-29 Geoffrey Gongwer Non-volatile memory with improved programming and method therefor
EP1249842A1 (en) * 2001-04-10 2002-10-16 STMicroelectronics S.r.l. Method for programming nonvolatile memory cells with program and verify algorithm using a staircase voltage with varying step amplitude

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US7414887B2 (en) 2008-08-19
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CN1930631B (en) 2012-09-05
US20050162924A1 (en) 2005-07-28

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