WO2005034149A3 - Kugel- oder kornförmiges halbleiterbauelement zur verwendung in solarzellen und verfahren zur herstellung; verfahren zur herstellung einer solarzelle mit halbleiterbauelement und solarzelle - Google Patents

Kugel- oder kornförmiges halbleiterbauelement zur verwendung in solarzellen und verfahren zur herstellung; verfahren zur herstellung einer solarzelle mit halbleiterbauelement und solarzelle Download PDF

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Publication number
WO2005034149A3
WO2005034149A3 PCT/EP2004/010615 EP2004010615W WO2005034149A3 WO 2005034149 A3 WO2005034149 A3 WO 2005034149A3 EP 2004010615 W EP2004010615 W EP 2004010615W WO 2005034149 A3 WO2005034149 A3 WO 2005034149A3
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WO
WIPO (PCT)
Prior art keywords
solar cell
semiconductor element
producing
spherical
grain
Prior art date
Application number
PCT/EP2004/010615
Other languages
English (en)
French (fr)
Other versions
WO2005034149A2 (de
Inventor
Jaques Scheuten
Volker Geyer
Patrick Kaas
Original Assignee
Scheuten Glasgroep Bv
Jaques Scheuten
Volker Geyer
Patrick Kaas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Scheuten Glasgroep Bv, Jaques Scheuten, Volker Geyer, Patrick Kaas filed Critical Scheuten Glasgroep Bv
Priority to CA2540723A priority Critical patent/CA2540723C/en
Priority to KR1020067006281A priority patent/KR101168260B1/ko
Priority to US10/574,633 priority patent/US20070089782A1/en
Priority to EP04765485A priority patent/EP1671336A2/de
Priority to JP2006530005A priority patent/JP2007507867A/ja
Publication of WO2005034149A2 publication Critical patent/WO2005034149A2/de
Publication of WO2005034149A3 publication Critical patent/WO2005034149A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Die Erfindung betrifft ein kugel- oder kornförmiges Halbleiterbauelement zur Verwendung in Solarzellen und ein Verfahren zur Herstellung dieses Halbleiterbauelementes. Die Erfindung betrifft ferner eine Solarzelle mit integrierten kugelförmigen Halbleiterbauelementen, ein Verfahren zur Herstellung dieser Solarzelle und ein Photovoltaikmodul mit wenigstens einer Solarzelle. Das Halbleiterbauelement zeichnet sich dadurch aus, dass auf einem kugel- oder kornförmigen Substratkern eine Rückkontakt- und eine I-III-VI-Verbindungshalbleiterschicht abgeschieden sind. Der I-III-VI-Verbindungshalbleiter wird durch Aufbringen von Precursorschichten und eine anschließende Selenisierung oder Sulfurisierung erzeugt. Mehrere der Halbleiterbauelemente werden zur Herstellung einer Solarzelle in eine Trägerschicht eingebracht werden, aus welcher sie auf wenigstens einer Seite herausragen. Die Trägerschicht wird auf einer Seite abgetragen, so dass die Rückkontaktschicht der meisten Halbleiterbauelemente freigelegt ist. Diese Rückkontaktschicht kann in Kontakt mit einem Rückkontakt der Solarzelle gebracht werden, während auf der Seite der nicht bearbeiteten Halbleiterbauelemente ein Vorderkontakt aufgebracht wird.
PCT/EP2004/010615 2003-10-02 2004-09-22 Kugel- oder kornförmiges halbleiterbauelement zur verwendung in solarzellen und verfahren zur herstellung; verfahren zur herstellung einer solarzelle mit halbleiterbauelement und solarzelle WO2005034149A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CA2540723A CA2540723C (en) 2003-10-02 2004-09-22 Spherical or grain-shaped semiconductor element for use in solar cells and method for producing the same; method for producing a solar cell comprising said semiconductor element and solar cell
KR1020067006281A KR101168260B1 (ko) 2003-10-02 2004-09-22 태양 전지용 구형상 또는 입상의 반도체 소자 및 그 제조방법, 상기 반도체 소자를 포함하는 태양 전지를 제조하는방법 및 태양 전지
US10/574,633 US20070089782A1 (en) 2003-10-02 2004-09-22 Spherical or grain-shaped semiconductor element for use in solar cells and method for producing the same; method for producing a solar cell comprising said semiconductor element and solar cell
EP04765485A EP1671336A2 (de) 2003-10-02 2004-09-22 Kugel- oder kornf rmiges halbleiterbauelement zur verwendung in solarzellen und verfahren zur herstellung; verfahren zur herstellung einer solarzelle mit halbleiterbauelement und solarzelle
JP2006530005A JP2007507867A (ja) 2003-10-02 2004-09-22 太陽電池に利用される球状、又は、粒状の半導体素子、その生産方法、その半導体素子を含む太陽電池の生産方法、及び、太陽電池

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP03022301A EP1521308A1 (de) 2003-10-02 2003-10-02 Kugel- oder kornförmiges Halbleiterbauelement zur Verwendung in Solarzellen und Verfahren zur Herstellung; Verfahren zur Herstellung einer Solarzelle mit Halbleiterbauelement und Solarzelle
EP03022301.0 2003-10-02

Publications (2)

Publication Number Publication Date
WO2005034149A2 WO2005034149A2 (de) 2005-04-14
WO2005034149A3 true WO2005034149A3 (de) 2005-05-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/010615 WO2005034149A2 (de) 2003-10-02 2004-09-22 Kugel- oder kornförmiges halbleiterbauelement zur verwendung in solarzellen und verfahren zur herstellung; verfahren zur herstellung einer solarzelle mit halbleiterbauelement und solarzelle

Country Status (7)

Country Link
US (1) US20070089782A1 (de)
EP (3) EP1521308A1 (de)
JP (2) JP2007507867A (de)
KR (2) KR20120034826A (de)
CN (1) CN100517764C (de)
CA (1) CA2540723C (de)
WO (1) WO2005034149A2 (de)

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