WO2004073014A3 - Metal reduction in wafer scribe area - Google Patents

Metal reduction in wafer scribe area Download PDF

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Publication number
WO2004073014A3
WO2004073014A3 PCT/US2004/001925 US2004001925W WO2004073014A3 WO 2004073014 A3 WO2004073014 A3 WO 2004073014A3 US 2004001925 W US2004001925 W US 2004001925W WO 2004073014 A3 WO2004073014 A3 WO 2004073014A3
Authority
WO
WIPO (PCT)
Prior art keywords
metal
scribe area
wafer
metal reduction
wafer scribe
Prior art date
Application number
PCT/US2004/001925
Other languages
French (fr)
Other versions
WO2004073014A2 (en
Inventor
Scott K Pozder
Trent S Uehling
Lakshmi N Ramanathan
Original Assignee
Freescale Semiconductor Inc
Scott K Pozder
Trent S Uehling
Lakshmi N Ramanathan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc, Scott K Pozder, Trent S Uehling, Lakshmi N Ramanathan filed Critical Freescale Semiconductor Inc
Priority to JP2006502974A priority Critical patent/JP2006516824A/en
Priority to CN2004800029150A priority patent/CN1777978B/en
Publication of WO2004073014A2 publication Critical patent/WO2004073014A2/en
Publication of WO2004073014A3 publication Critical patent/WO2004073014A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Dicing (AREA)

Abstract

A process for removing metal from a scribe area 103 of a semiconductor wafer 101. The metal removed may include exposed metal in a saw path 111 of the scribe area and the metal in a crack stop trench of the scribe area. In one example, copper is removed from the scribe area by wet etching the wafer. In one example, the wet etching process is performed after the removal of an exposed barrier adhesion layer 203 on the wafer surface. Removal of the metal in the saw path 111 may reduce the amount of metal buildup on a saw blade 903 during singulation of the die areas 1007 of a wafer.
PCT/US2004/001925 2003-01-27 2004-01-23 Metal reduction in wafer scribe area WO2004073014A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006502974A JP2006516824A (en) 2003-01-27 2004-01-23 Metal reduction in wafer scribe area
CN2004800029150A CN1777978B (en) 2003-01-27 2004-01-23 Metal reduction in wafer scribe area

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/351,798 2003-01-27
US10/351,798 US6951801B2 (en) 2003-01-27 2003-01-27 Metal reduction in wafer scribe area

Publications (2)

Publication Number Publication Date
WO2004073014A2 WO2004073014A2 (en) 2004-08-26
WO2004073014A3 true WO2004073014A3 (en) 2005-04-21

Family

ID=32735850

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/001925 WO2004073014A2 (en) 2003-01-27 2004-01-23 Metal reduction in wafer scribe area

Country Status (6)

Country Link
US (1) US6951801B2 (en)
JP (1) JP2006516824A (en)
KR (1) KR101001530B1 (en)
CN (1) CN1777978B (en)
TW (1) TWI325155B (en)
WO (1) WO2004073014A2 (en)

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US7679195B2 (en) * 2006-06-20 2010-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. PAD structure and method of testing
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US7566915B2 (en) * 2006-12-29 2009-07-28 Intel Corporation Guard ring extension to prevent reliability failures
US9601443B2 (en) * 2007-02-13 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Test structure for seal ring quality monitor
US7829998B2 (en) * 2007-05-04 2010-11-09 Stats Chippac, Ltd. Semiconductor wafer having through-hole vias on saw streets with backside redistribution layer
US7674689B2 (en) * 2007-09-20 2010-03-09 Infineon Technologies Ag Method of making an integrated circuit including singulating a semiconductor wafer
KR20090046993A (en) * 2007-11-07 2009-05-12 주식회사 동부하이텍 Semiconductor device and method for fabricating the same
JP5583320B2 (en) * 2007-12-05 2014-09-03 ピーエスフォー ルクスコ エスエイアールエル Semiconductor wafer and manufacturing method thereof
US8013425B2 (en) 2008-05-13 2011-09-06 United Microelectronics Corp. Scribe line structure for wafer dicing and method of making the same
US7821104B2 (en) * 2008-08-29 2010-10-26 Freescale Semiconductor, Inc. Package device having crack arrest feature and method of forming
US8022509B2 (en) * 2008-11-28 2011-09-20 United Microelectronics Corp. Crack stopping structure and method for fabricating the same
CN102272903A (en) * 2009-01-30 2011-12-07 松下电器产业株式会社 Semiconductor device and method for manufacturing same
US8237246B2 (en) * 2009-02-12 2012-08-07 International Business Machines Corporation Deep trench crackstops under contacts
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JP5175803B2 (en) * 2009-07-01 2013-04-03 新光電気工業株式会社 Manufacturing method of semiconductor device
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Also Published As

Publication number Publication date
CN1777978A (en) 2006-05-24
WO2004073014A2 (en) 2004-08-26
TW200416857A (en) 2004-09-01
US20040147097A1 (en) 2004-07-29
JP2006516824A (en) 2006-07-06
TWI325155B (en) 2010-05-21
KR101001530B1 (en) 2010-12-16
US6951801B2 (en) 2005-10-04
KR20050095630A (en) 2005-09-29
CN1777978B (en) 2010-07-21

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