WO2004055472A3 - Method for aberration detection and measurement - Google Patents

Method for aberration detection and measurement Download PDF

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Publication number
WO2004055472A3
WO2004055472A3 PCT/US2003/039457 US0339457W WO2004055472A3 WO 2004055472 A3 WO2004055472 A3 WO 2004055472A3 US 0339457 W US0339457 W US 0339457W WO 2004055472 A3 WO2004055472 A3 WO 2004055472A3
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WO
WIPO (PCT)
Prior art keywords
aberrations
zones
test target
open
unique
Prior art date
Application number
PCT/US2003/039457
Other languages
French (fr)
Other versions
WO2004055472A2 (en
Inventor
Bruce W Smith
Original Assignee
Bruce W Smith
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bruce W Smith filed Critical Bruce W Smith
Priority to AU2003299606A priority Critical patent/AU2003299606A1/en
Publication of WO2004055472A2 publication Critical patent/WO2004055472A2/en
Publication of WO2004055472A3 publication Critical patent/WO2004055472A3/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

Abstract

Aberrations in an optical system can be detected and measured using a method comprised of a test target in the object plane of a projection system and imaging a photoresist film with the system. The test target comprises at least one open figure which comprises a multiple component array of phase zones, where the multiple zones are arranged within the open figure so that their response to lens aberration is interrelated and the zones respond uniquely to specific aberrations depending on their location within the figure. This is a unique and new method of detecting a variety of aberration types including coma, spherical, astigmatism, and three-point through the exposure of a photoresist material placed in the image plane of the system and the evaluation of these images. The method of the invention offers an advantage over other methods because of the sensitivity to particular abberation types, the unique response of the multiple zones of the test target to aberrations, and the ease with which aberrations can be distinguished.
PCT/US2003/039457 2002-12-13 2003-12-12 Method for aberration detection and measurement WO2004055472A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003299606A AU2003299606A1 (en) 2002-12-13 2003-12-12 Method for aberration detection and measurement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43315302P 2002-12-13 2002-12-13
US60/433,153 2002-12-13

Publications (2)

Publication Number Publication Date
WO2004055472A2 WO2004055472A2 (en) 2004-07-01
WO2004055472A3 true WO2004055472A3 (en) 2004-08-12

Family

ID=32595124

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/039457 WO2004055472A2 (en) 2002-12-13 2003-12-12 Method for aberration detection and measurement

Country Status (3)

Country Link
US (2) US7136143B2 (en)
AU (1) AU2003299606A1 (en)
WO (1) WO2004055472A2 (en)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005522871A (en) * 2002-04-15 2005-07-28 カール・ツァイス・エスエムティー・アーゲー Interference measuring apparatus and projection exposure apparatus comprising the measuring apparatus
US7646906B2 (en) 2004-01-29 2010-01-12 Kla-Tencor Technologies Corp. Computer-implemented methods for detecting defects in reticle design data
US9188974B1 (en) * 2004-02-13 2015-11-17 Kla-Tencor Technologies Corp. Methods for improved monitor and control of lithography processes
US20040174806A1 (en) * 2004-04-19 2004-09-09 Johnson Kent Christian Optical disc having lenticular surface and method of manufacturing
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20080144036A1 (en) * 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
JP4904034B2 (en) 2004-09-14 2012-03-28 ケーエルエー−テンカー コーポレイション Method, system and carrier medium for evaluating reticle layout data
US20060193531A1 (en) * 2005-02-25 2006-08-31 William Roberts System for analyzing images of blazed phase grating samples
US7769225B2 (en) 2005-08-02 2010-08-03 Kla-Tencor Technologies Corp. Methods and systems for detecting defects in a reticle design pattern
DE102005041203A1 (en) * 2005-08-31 2007-03-01 Carl Zeiss Sms Gmbh Device for interferometric measurement of phase masks used for e.g. lithography, produces phase shifting interferogram to be applied over phase mask by translating coherence mask and/or diffraction grating in X-Y direction
US8041103B2 (en) 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
US7570796B2 (en) * 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7676077B2 (en) 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
WO2008077100A2 (en) 2006-12-19 2008-06-26 Kla-Tencor Corporation Systems and methods for creating inspection recipes
WO2008086282A2 (en) 2007-01-05 2008-07-17 Kla-Tencor Corporation Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US7738093B2 (en) 2007-05-07 2010-06-15 Kla-Tencor Corp. Methods for detecting and classifying defects on a reticle
US7962863B2 (en) 2007-05-07 2011-06-14 Kla-Tencor Corp. Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer
US8213704B2 (en) 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
US7796804B2 (en) 2007-07-20 2010-09-14 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
US7711514B2 (en) 2007-08-10 2010-05-04 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan
JP5425779B2 (en) 2007-08-20 2014-02-26 ケーエルエー−テンカー・コーポレーション A computer-implemented method for determining whether an actual defect is a potential systematic defect or a potentially random defect
US8139844B2 (en) 2008-04-14 2012-03-20 Kla-Tencor Corp. Methods and systems for determining a defect criticality index for defects on wafers
US8432530B2 (en) * 2008-07-22 2013-04-30 Canon Kabushiki Kaisha Device, method, and system for measuring image profiles produced by an optical lithography system
US9659670B2 (en) 2008-07-28 2017-05-23 Kla-Tencor Corp. Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
JP5277250B2 (en) * 2008-09-25 2013-08-28 株式会社日立ハイテクノロジーズ Charged particle beam application apparatus and geometric aberration measuring method thereof
DE102008061122A1 (en) * 2008-12-09 2010-06-17 Fresenius Medical Care Deutschland Gmbh Method and device for determining and / or monitoring a physical condition, in particular a cardiovascular size, of a patient based on an amplitude of a pressure signal
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
US8204297B1 (en) 2009-02-27 2012-06-19 Kla-Tencor Corp. Methods and systems for classifying defects detected on a reticle
US8112241B2 (en) 2009-03-13 2012-02-07 Kla-Tencor Corp. Methods and systems for generating an inspection process for a wafer
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
JP5581248B2 (en) * 2011-03-08 2014-08-27 株式会社日立ハイテクノロジーズ Scanning electron microscope
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8831334B2 (en) 2012-01-20 2014-09-09 Kla-Tencor Corp. Segmentation for wafer inspection
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
JP5969848B2 (en) * 2012-07-19 2016-08-17 キヤノン株式会社 Exposure apparatus, method for obtaining adjustment amount for adjustment, program, and device manufacturing method
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9053527B2 (en) 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
WO2014149197A1 (en) 2013-02-01 2014-09-25 Kla-Tencor Corporation Detecting defects on a wafer using defect-specific and multi-channel information
US9442384B2 (en) * 2013-03-13 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process and mask
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
DE102014210641B4 (en) 2014-06-04 2020-12-10 Carl Zeiss Ag Test object, use of a test object and device and method for measuring the point spread function of an optical system
DE102015219330A1 (en) * 2015-10-07 2017-04-13 Carl Zeiss Smt Gmbh Method and apparatus for beam analysis
US10451564B2 (en) * 2017-10-27 2019-10-22 Applied Materials, Inc. Empirical detection of lens aberration for diffraction-limited optical system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000146758A (en) * 1998-11-18 2000-05-26 Hitachi Ltd Lens aberration measuring method, photomask used therefor and fabrication of semiconductor device
US20030091913A1 (en) * 2001-10-01 2003-05-15 Canon Kabushiki Kaisha Aberration measuring method and projection exposure apparatus
US20030098970A1 (en) * 2000-12-06 2003-05-29 Asml Masktools Netherlands B.V. Method and apparatus for detecting aberrations in a projection lens utilized for projection optics

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58205834A (en) * 1982-05-25 1983-11-30 Canon Inc Measurement of astigmation
JP3165711B2 (en) * 1991-08-02 2001-05-14 キヤノン株式会社 Image projection method and method for manufacturing semiconductor device using the method
US5828455A (en) * 1997-03-07 1998-10-27 Litel Instruments Apparatus, method of measurement, and method of data analysis for correction of optical system
US5978085A (en) * 1997-03-07 1999-11-02 Litel Instruments Apparatus method of measurement and method of data analysis for correction of optical system
US6552776B1 (en) * 1998-10-30 2003-04-22 Advanced Micro Devices, Inc. Photolithographic system including light filter that compensates for lens error
US6248486B1 (en) 1998-11-23 2001-06-19 U.S. Philips Corporation Method of detecting aberrations of an optical imaging system
US6368763B2 (en) * 1998-11-23 2002-04-09 U.S. Philips Corporation Method of detecting aberrations of an optical imaging system
WO2001023933A1 (en) * 1999-09-29 2001-04-05 Nikon Corporation Projection optical system
US6839132B2 (en) * 2002-02-12 2005-01-04 Kabushiki Kaisha Toshiba Aberration measuring method of projection optical system
US6974653B2 (en) * 2002-04-19 2005-12-13 Nikon Precision Inc. Methods for critical dimension and focus mapping using critical dimension test marks
US6759180B2 (en) * 2002-04-23 2004-07-06 Hewlett-Packard Development Company, L.P. Method of fabricating sub-lithographic sized line and space patterns for nano-imprinting lithography

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000146758A (en) * 1998-11-18 2000-05-26 Hitachi Ltd Lens aberration measuring method, photomask used therefor and fabrication of semiconductor device
US20030098970A1 (en) * 2000-12-06 2003-05-29 Asml Masktools Netherlands B.V. Method and apparatus for detecting aberrations in a projection lens utilized for projection optics
US20030091913A1 (en) * 2001-10-01 2003-05-15 Canon Kabushiki Kaisha Aberration measuring method and projection exposure apparatus

Also Published As

Publication number Publication date
WO2004055472A2 (en) 2004-07-01
US20040174506A1 (en) 2004-09-09
US7345735B2 (en) 2008-03-18
US20070019171A1 (en) 2007-01-25
AU2003299606A1 (en) 2004-07-09
US7136143B2 (en) 2006-11-14

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