WO2004027684A3 - Photolithography mask repair - Google Patents

Photolithography mask repair Download PDF

Info

Publication number
WO2004027684A3
WO2004027684A3 PCT/US2003/029521 US0329521W WO2004027684A3 WO 2004027684 A3 WO2004027684 A3 WO 2004027684A3 US 0329521 W US0329521 W US 0329521W WO 2004027684 A3 WO2004027684 A3 WO 2004027684A3
Authority
WO
WIPO (PCT)
Prior art keywords
defect
charged particle
quartz
structures
gallium atoms
Prior art date
Application number
PCT/US2003/029521
Other languages
French (fr)
Other versions
WO2004027684B1 (en
WO2004027684A2 (en
Inventor
Diane K Stewart
Jr J David Casey
John Beaty
Christian R Musil
Steven Berger
Original Assignee
Fei Co
Diane K Stewart
Jr J David Casey
John Beaty
Christian R Musil
Steven Berger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fei Co, Diane K Stewart, Jr J David Casey, John Beaty, Christian R Musil, Steven Berger filed Critical Fei Co
Priority to EP03756838A priority Critical patent/EP1540665A4/en
Priority to JP2004538248A priority patent/JP2005539273A/en
Priority to AU2003299002A priority patent/AU2003299002A1/en
Publication of WO2004027684A2 publication Critical patent/WO2004027684A2/en
Publication of WO2004027684A3 publication Critical patent/WO2004027684A3/en
Publication of WO2004027684B1 publication Critical patent/WO2004027684B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21G—CONVERSION OF CHEMICAL ELEMENTS; RADIOACTIVE SOURCES
    • G21G5/00—Alleged conversion of chemical elements by chemical reaction

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam. In another aspect, a charged particle beam can be programmed to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angle.
PCT/US2003/029521 2002-09-18 2003-09-18 Photolithography mask repair WO2004027684A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03756838A EP1540665A4 (en) 2002-09-18 2003-09-18 Photolithography mask repair
JP2004538248A JP2005539273A (en) 2002-09-18 2003-09-18 Photolithographic mask modification
AU2003299002A AU2003299002A1 (en) 2002-09-18 2003-09-18 Photolithography mask repair

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41169902P 2002-09-18 2002-09-18
US60/411,699 2002-09-18

Publications (3)

Publication Number Publication Date
WO2004027684A2 WO2004027684A2 (en) 2004-04-01
WO2004027684A3 true WO2004027684A3 (en) 2004-11-04
WO2004027684B1 WO2004027684B1 (en) 2005-01-06

Family

ID=32030714

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/029521 WO2004027684A2 (en) 2002-09-18 2003-09-18 Photolithography mask repair

Country Status (7)

Country Link
US (2) US7504182B2 (en)
EP (1) EP1540665A4 (en)
JP (1) JP2005539273A (en)
KR (1) KR101077980B1 (en)
CN (1) CN100521062C (en)
AU (1) AU2003299002A1 (en)
WO (1) WO2004027684A2 (en)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10253073A1 (en) * 2002-11-07 2004-05-27 Infineon Technologies Ag Process for repairing a defect of a light-influencing structure on a photolithographic mask in semiconductor component production comprises irradiating gallium ions in the region of a defect for implantation into the mask substrate
JP2004191358A (en) * 2002-11-27 2004-07-08 Seiko Instruments Inc Sample preparation method and device by composite charge particle beam
JP2004177682A (en) * 2002-11-27 2004-06-24 Seiko Instruments Inc Method for repairing photomask by compound charged particle beam and apparatus therefor
CN1739066B (en) * 2003-01-16 2010-06-02 Fei公司 Electron beam processing technology for mask repair
US6927003B2 (en) * 2003-02-11 2005-08-09 Synopsys, Inc. Simulation based PSM clear defect repair method and system
DE602004021750D1 (en) 2003-07-14 2009-08-13 Fei Co Two beam system
FR2863772B1 (en) * 2003-12-16 2006-05-26 Commissariat Energie Atomique METHOD FOR REPAIRING PATTERN ERRORS MADE IN THIN LAYERS
KR100630692B1 (en) * 2004-07-22 2006-10-02 삼성전자주식회사 Photo-mask and method of compensating transmissivity of photo-mask
US20060099519A1 (en) * 2004-11-10 2006-05-11 Moriarty Michael H Method of depositing a material providing a specified attenuation and phase shift
US7676077B2 (en) 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
WO2007136183A1 (en) * 2006-05-18 2007-11-29 Phicom Corporation Method of repairing a polymer mask
KR100866499B1 (en) * 2006-05-18 2008-11-03 주식회사 파이컴 Method for repairing polymer mask
US20070278180A1 (en) * 2006-06-01 2007-12-06 Williamson Mark J Electron induced chemical etching for materials characterization
US7892978B2 (en) * 2006-07-10 2011-02-22 Micron Technology, Inc. Electron induced chemical etching for device level diagnosis
US7791055B2 (en) * 2006-07-10 2010-09-07 Micron Technology, Inc. Electron induced chemical etching/deposition for enhanced detection of surface defects
US7807062B2 (en) * 2006-07-10 2010-10-05 Micron Technology, Inc. Electron induced chemical etching and deposition for local circuit repair
US7791071B2 (en) 2006-08-14 2010-09-07 Micron Technology, Inc. Profiling solid state samples
US7718080B2 (en) * 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
US7833427B2 (en) 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
DE102006043874B4 (en) * 2006-09-15 2020-07-09 Carl Zeiss Smt Gmbh Method and device for repairing photolithography masks
JP5135594B2 (en) * 2007-05-15 2013-02-06 アルカム アーベー Method for making 3D objects
US7796804B2 (en) 2007-07-20 2010-09-14 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
US11311917B2 (en) 2007-08-09 2022-04-26 Bruker Nano, Inc. Apparatus and method for contamination identification
EP2176708B1 (en) * 2007-08-09 2015-10-07 Rave LLC Method for modifying optical material properties
US20090060317A1 (en) * 2007-08-31 2009-03-05 William Volk Mask defect repair through wafer plane modeling
WO2009089499A2 (en) * 2008-01-09 2009-07-16 Fei Company Multibeam system
US8293546B2 (en) 2008-06-17 2012-10-23 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with sub-geometry removal and method of manufacture thereof
US10493559B2 (en) 2008-07-09 2019-12-03 Fei Company Method and apparatus for laser machining
KR101841897B1 (en) 2008-07-28 2018-03-23 케이엘에이-텐코어 코오포레이션 Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
DE102008037951B4 (en) * 2008-08-14 2018-02-15 Nawotec Gmbh Method and apparatus for electron beam induced etching of gallium contaminated layers
DE102008037943B4 (en) * 2008-08-14 2018-04-26 Nawotec Gmbh Method and apparatus for electron-beam-induced etching and semiconductor device etched with a structure by means of such a method
DE102008041815A1 (en) 2008-09-04 2010-04-15 Carl Zeiss Nts Gmbh Method for analyzing a sample
US8168961B2 (en) * 2008-11-26 2012-05-01 Fei Company Charged particle beam masking for laser ablation micromachining
DE102008062928A1 (en) * 2008-12-23 2010-07-01 Nawotec Gmbh A method of determining a repair shape of a defect at or near an edge of a substrate of a photomask
US8778804B2 (en) * 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch
US8054558B2 (en) * 2009-02-11 2011-11-08 Omniprobe, Inc. Multiple magnification optical system with single objective lens
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
EP2226830B1 (en) 2009-03-06 2014-01-08 FEI Company Charged particle beam processing
JP5702552B2 (en) * 2009-05-28 2015-04-15 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ Control method of dual beam system
US8524139B2 (en) 2009-08-10 2013-09-03 FEI Compay Gas-assisted laser ablation
WO2011060444A2 (en) * 2009-11-16 2011-05-19 Fei Company Gas delivery for beam processing systems
DE102010024625A1 (en) * 2010-06-22 2011-12-22 Carl Zeiss Nts Gmbh Method for editing an object
EP2402475A1 (en) 2010-06-30 2012-01-04 Fei Company Beam-induced deposition at cryogenic temperatures
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
US8319181B2 (en) * 2011-01-30 2012-11-27 Fei Company System and method for localization of large numbers of fluorescent markers in biological samples
US8853078B2 (en) 2011-01-30 2014-10-07 Fei Company Method of depositing material
US9090973B2 (en) 2011-01-31 2015-07-28 Fei Company Beam-induced deposition of low-resistivity material
KR101866448B1 (en) * 2011-02-10 2018-06-11 삼성전자주식회사 Method of manufacturing photomask using the same, computer readable media including a sequence of programmed instructions stored thereon for implementing the same and mask imaging system
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US8629407B2 (en) * 2011-04-13 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Contamination inspection
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
JP2013101929A (en) 2011-11-07 2013-05-23 Fei Co Charged particle beam system aperture
US8831334B2 (en) 2012-01-20 2014-09-09 Kla-Tencor Corp. Segmentation for wafer inspection
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
US9733164B2 (en) 2012-06-11 2017-08-15 Fei Company Lamella creation method and device using fixed-angle beam and rotating sample stage
US8759764B2 (en) 2012-06-29 2014-06-24 Fei Company On-axis detector for charged particle beam system
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9053527B2 (en) 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
KR102019534B1 (en) 2013-02-01 2019-09-09 케이엘에이 코포레이션 Detecting defects on a wafer using defect-specific and multi-channel information
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
US9478390B2 (en) 2014-06-30 2016-10-25 Fei Company Integrated light optics and gas delivery in a charged particle lens
KR102235616B1 (en) 2014-08-14 2021-04-02 삼성전자주식회사 Photomask, method for fabricating the photomask, and method for fabricating semiconductor using the photomask
US9625808B2 (en) * 2015-02-13 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd. Durable metal film deposition for mask repair
KR101737016B1 (en) * 2015-10-26 2017-05-17 주식회사 이오테크닉스 System and method for correcting photomask
US9910350B2 (en) * 2015-11-16 2018-03-06 Taiwan Semiconductor Manufacturing Company, Ltd Method for repairing a mask
US10386828B2 (en) 2015-12-17 2019-08-20 Lam Research Corporation Methods and apparatuses for etch profile matching by surface kinetic model optimization
US11094502B2 (en) 2015-12-24 2021-08-17 Asml Netherlands B.V. Method and apparatus for inspection
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
JP2016095533A (en) * 2016-01-25 2016-05-26 信越化学工業株式会社 Method for irradiating pattern of light
US9792393B2 (en) 2016-02-08 2017-10-17 Lam Research Corporation Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization
DE102016203094B4 (en) 2016-02-26 2022-02-10 Carl Zeiss Smt Gmbh Method and apparatus for permanently repairing missing material defects of a photolithographic mask
CN105506548B (en) * 2016-03-01 2018-05-25 京东方科技集团股份有限公司 A kind of mask plate prosthetic device, restorative procedure and deposition system
EP3249676B1 (en) 2016-05-27 2018-10-03 FEI Company Dual-beam charged-particle microscope with in situ deposition functionality
US10197908B2 (en) 2016-06-21 2019-02-05 Lam Research Corporation Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework
US10254641B2 (en) * 2016-12-01 2019-04-09 Lam Research Corporation Layout pattern proximity correction through fast edge placement error prediction
US10534257B2 (en) 2017-05-01 2020-01-14 Lam Research Corporation Layout pattern proximity correction through edge placement error prediction
US10845699B2 (en) * 2017-11-29 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming photomask and photolithography method
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
KR20200130870A (en) 2018-04-10 2020-11-20 램 리써치 코포레이션 Optical instrumentation in machine learning to characterize features
CN112005347A (en) 2018-04-10 2020-11-27 朗姆研究公司 Resist and etch modeling
US10714307B2 (en) * 2018-06-08 2020-07-14 Kla-Tencor Corporation Neutral atom imaging system
US10977405B2 (en) 2019-01-29 2021-04-13 Lam Research Corporation Fill process optimization using feature scale modeling
DE102019201468A1 (en) * 2019-02-05 2020-08-06 Carl Zeiss Smt Gmbh Device and method for repairing a photolithographic mask
US11715622B2 (en) * 2020-08-05 2023-08-01 Kla Corporation Material recovery systems for optical components

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272116A (en) * 1991-11-18 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Method for pattern defect correction of a photomask
US5795688A (en) * 1996-08-14 1998-08-18 Micron Technology, Inc. Process for detecting defects in photomasks through aerial image comparisons
US6042738A (en) * 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
US6091845A (en) * 1998-02-24 2000-07-18 Micron Technology, Inc. Inspection technique of photomask
US6346352B1 (en) * 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
US6506525B2 (en) * 2000-06-01 2003-01-14 Samsung Electronics Co., Ltd. Method of repairing an opaque defect in a photomask

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249077A (en) * 1978-08-04 1981-02-03 Crawford Charles K Ion charge neutralization for electron beam devices
JPS59129423A (en) * 1983-01-14 1984-07-25 Seiko Instr & Electronics Ltd Mask repairing method by ion implantation
US4548883A (en) * 1983-05-31 1985-10-22 At&T Bell Laboratories Correction of lithographic masks
US5035787A (en) * 1987-07-22 1991-07-30 Microbeam, Inc. Method for repairing semiconductor masks and reticles
JPH0646298B2 (en) * 1988-06-07 1994-06-15 三菱電機株式会社 Photomask manufacturing method
JP2811073B2 (en) * 1988-11-01 1998-10-15 セイコーインスツルメンツ株式会社 Cross section processing observation device
JPH03139647A (en) * 1989-10-26 1991-06-13 Fujitsu Ltd Correcting method for mask
JP2539945B2 (en) * 1990-09-07 1996-10-02 三菱電機株式会社 Photomask manufacturing method
JPH04165353A (en) * 1990-10-30 1992-06-11 Oki Electric Ind Co Ltd Correction method of photo-mask
JPH05174768A (en) 1991-02-26 1993-07-13 Nikon Corp Scanning electron microscope of environment control type
US5208125A (en) * 1991-07-30 1993-05-04 Micron Technology, Inc. Phase shifting reticle fabrication using ion implantation
JP3730263B2 (en) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション Apparatus and method for automatic substrate inspection using charged particle beam
JP3139647B2 (en) 1992-10-12 2001-03-05 東レ株式会社 Yarn difference mixed yarn fabric having interference color and method for producing the same
JP3238550B2 (en) * 1992-11-02 2001-12-17 株式会社東芝 Structural defect repair method
JPH06273918A (en) * 1993-03-23 1994-09-30 Seiko Instr Inc Method for correcting residual defect of phase shift mask and device therefor
JP3380027B2 (en) 1994-02-07 2003-02-24 三菱電機株式会社 Method for repairing pattern defect of phase shift mask
US6172363B1 (en) * 1996-03-05 2001-01-09 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern
US6388753B1 (en) * 1996-03-14 2002-05-14 Massachusetts Institute Of Technology All-optical bit phase sensing and clock recovery apparatus and methods
JPH1090876A (en) * 1996-09-17 1998-04-10 Toshiba Corp Method and device for correcting defect
JP2904170B2 (en) * 1996-12-27 1999-06-14 日本電気株式会社 Halftone phase shift mask and halftone phase shift mask defect repair method
JP3050158B2 (en) * 1997-03-10 2000-06-12 日本電気株式会社 How to fix the mask
US6016357A (en) * 1997-06-16 2000-01-18 International Business Machines Corporation Feedback method to repair phase shift masks
US6538254B1 (en) * 1997-07-22 2003-03-25 Hitachi, Ltd. Method and apparatus for sample fabrication
JP4176159B2 (en) * 1997-12-08 2008-11-05 エフ イー アイ カンパニ Environmentally controlled SEM using magnetic field for improved secondary electron detection
WO1999030344A1 (en) 1997-12-08 1999-06-17 Philips Electron Optics B.V. Environmental sem with multipole fields for improved secondary electron detection
US6590210B1 (en) * 1998-03-10 2003-07-08 Erik Essers Scanning electron microscope
US6525317B1 (en) * 1998-12-30 2003-02-25 Micron Technology Inc. Reduction of charging effect and carbon deposition caused by electron beam devices
JP3848006B2 (en) * 1999-03-15 2006-11-22 株式会社東芝 Mask defect correction method
US6368753B1 (en) 1999-08-27 2002-04-09 Agere Systems Guardian Corp. Mask repair
US6322935B1 (en) * 2000-02-28 2001-11-27 Metron Technology Method and apparatus for repairing an alternating phase shift mask
DE50113837D1 (en) * 2000-07-07 2008-05-21 Zeiss Carl Nts Gmbh DETECTOR FOR VARIATING PRINTING AREAS AND ELECTRONIC MICROSCOPE WITH A CORRESPONDING DETECTOR
WO2003012551A1 (en) * 2001-07-27 2003-02-13 Fei Company Electron beam processing
JP3626453B2 (en) * 2001-12-27 2005-03-09 株式会社東芝 Photomask correction method and correction apparatus
CZ20022105A3 (en) * 2002-06-17 2004-02-18 Tescan, S. R. O. Detector of secondary electrons used particularly in a raster electron microscope
US20040121069A1 (en) * 2002-08-08 2004-06-24 Ferranti David C. Repairing defects on photomasks using a charged particle beam and topographical data from a scanning probe microscope
DE10253073A1 (en) * 2002-11-07 2004-05-27 Infineon Technologies Ag Process for repairing a defect of a light-influencing structure on a photolithographic mask in semiconductor component production comprises irradiating gallium ions in the region of a defect for implantation into the mask substrate
JP4297693B2 (en) * 2003-01-31 2009-07-15 株式会社ルネサステクノロジ Photomask, photomask manufacturing method, and photomask manufacturing apparatus
US6927003B2 (en) * 2003-02-11 2005-08-09 Synopsys, Inc. Simulation based PSM clear defect repair method and system
US6812462B1 (en) * 2003-02-21 2004-11-02 Kla-Tencor Technologies Corporation Dual electron beam instrument for multi-perspective
US7055798B2 (en) 2004-02-06 2006-06-06 Kojima Instruments Inc. Proportional solenoid control valve

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272116A (en) * 1991-11-18 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Method for pattern defect correction of a photomask
US5795688A (en) * 1996-08-14 1998-08-18 Micron Technology, Inc. Process for detecting defects in photomasks through aerial image comparisons
US6042738A (en) * 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
US6091845A (en) * 1998-02-24 2000-07-18 Micron Technology, Inc. Inspection technique of photomask
US6272236B1 (en) * 1998-02-24 2001-08-07 Micron Technology, Inc. Inspection technique of photomask
US6346352B1 (en) * 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
US6506525B2 (en) * 2000-06-01 2003-01-14 Samsung Electronics Co., Ltd. Method of repairing an opaque defect in a photomask

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1540665A4 *

Also Published As

Publication number Publication date
CN1695222A (en) 2005-11-09
KR101077980B1 (en) 2011-10-28
KR20050054948A (en) 2005-06-10
AU2003299002A8 (en) 2004-04-08
US7662524B2 (en) 2010-02-16
WO2004027684B1 (en) 2005-01-06
EP1540665A2 (en) 2005-06-15
US20090111036A1 (en) 2009-04-30
EP1540665A4 (en) 2008-02-13
CN100521062C (en) 2009-07-29
US7504182B2 (en) 2009-03-17
WO2004027684A2 (en) 2004-04-01
US20040151991A1 (en) 2004-08-05
JP2005539273A (en) 2005-12-22
AU2003299002A1 (en) 2004-04-08

Similar Documents

Publication Publication Date Title
WO2004027684A3 (en) Photolithography mask repair
TWI532073B (en) Method and system for modifying substrate relief features using ion implantation
US5405721A (en) Phase-shifting lithographic masks having phase-shifting layers of differing compositions
KR100518131B1 (en) Quartz defect removal utilizing gallium staining and femtosecond ablation
JPH04449A (en) Method for correcting photomask
JP2008311617A (en) Nano structure, and manufacturing method of nano structure
EP0644462B1 (en) Reactive ion beam etching of gratings and cross gratings structures
JP2004177682A (en) Method for repairing photomask by compound charged particle beam and apparatus therefor
TW201135829A (en) A novel fabrication method for producing undercut-etching microstructure
US5686206A (en) Method for the repair of lithographic masks
JP4550801B2 (en) Electron beam processing to repair the mask
US20050118533A1 (en) Planarization of substrate pits and scratches
JP2005189492A (en) Defect correction method for phase shift mask
US20070200174A1 (en) SOI substrate, mask blank for charged particle beam exposure, and mask for charged particle beam exposure
US7108798B2 (en) Defect repair method, in particular for repairing quartz defects on alternating phase shift masks
JP2004158579A (en) Process for producing transfer mask substrate, transfer mask substrate and transfer mask
Mirkarimi et al. A silicon-based, sequential coat-and-etch process to fabricate nearly perfect substrate surfaces
JPH04165353A (en) Correction method of photo-mask
Betz et al. Influence of sputter effects on the resolution in X-ray mask repair
JP2004273933A (en) Fine machining method for metal and metal oxide
JP4219714B2 (en) Mask defect correction method
JPH11109605A (en) Method for correcting exposure mask
KR100298175B1 (en) Method for fabricating photomask
Medvedskaya et al. Diamond micro-CRL for Coherent x-ray imaging and microscopy
JPH07219211A (en) Pattern defect correcting method for phase shift mask

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
B Later publication of amended claims

Effective date: 20041126

WWE Wipo information: entry into national phase

Ref document number: 2003756838

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2004538248

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020057004617

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 1020057004617

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2003756838

Country of ref document: EP