WO2004011694A3 - Method and apparatus for generating gas to a processing chamber - Google Patents
Method and apparatus for generating gas to a processing chamber Download PDFInfo
- Publication number
- WO2004011694A3 WO2004011694A3 PCT/US2003/022968 US0322968W WO2004011694A3 WO 2004011694 A3 WO2004011694 A3 WO 2004011694A3 US 0322968 W US0322968 W US 0322968W WO 2004011694 A3 WO2004011694 A3 WO 2004011694A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- canister
- generating gas
- solid material
- processing chamber
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D7/00—Sublimation
Abstract
A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes an unitary, isolatable, transportable canister having a plurality of first spacing elements, a plurality of second spacing elements and a solid material disposed within the canister. The spacing elements have different mean diameters. The solid material is adapted to produce a gas vapor when exposed to a temperature above a predetermined level at a predetermined pressure. In another embodiment, an apparatus for generating gas includes a gas source coupled to a processing chamber by a first gas line. A canister is coupled in-line with the first gas line and contains a solid material that produces a process gas when heated. A heater is disposed between the gas source and the canister to heat gas flowing into the canister.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/208,305 US6915592B2 (en) | 2002-07-29 | 2002-07-29 | Method and apparatus for generating gas to a processing chamber |
US10/208,305 | 2002-07-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004011694A2 WO2004011694A2 (en) | 2004-02-05 |
WO2004011694A3 true WO2004011694A3 (en) | 2004-08-19 |
Family
ID=31186790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/022968 WO2004011694A2 (en) | 2002-07-29 | 2003-07-22 | Method and apparatus for generating gas to a processing chamber |
Country Status (3)
Country | Link |
---|---|
US (2) | US6915592B2 (en) |
TW (1) | TWI304998B (en) |
WO (1) | WO2004011694A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110393868B (en) * | 2019-08-05 | 2020-10-02 | 安徽钟南防化科技有限公司 | Spliced canister and use method thereof |
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Also Published As
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---|---|
US20040025370A1 (en) | 2004-02-12 |
US6915592B2 (en) | 2005-07-12 |
US7294208B2 (en) | 2007-11-13 |
US20050257735A1 (en) | 2005-11-24 |
TW200402758A (en) | 2004-02-16 |
TWI304998B (en) | 2009-01-01 |
WO2004011694A2 (en) | 2004-02-05 |
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