WO2003079411A3 - Use of light emitting chemical reactions for control of semiconductor production processes - Google Patents

Use of light emitting chemical reactions for control of semiconductor production processes Download PDF

Info

Publication number
WO2003079411A3
WO2003079411A3 PCT/GB2003/001104 GB0301104W WO03079411A3 WO 2003079411 A3 WO2003079411 A3 WO 2003079411A3 GB 0301104 W GB0301104 W GB 0301104W WO 03079411 A3 WO03079411 A3 WO 03079411A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
control
chemical reactions
production processes
semiconductor production
Prior art date
Application number
PCT/GB2003/001104
Other languages
French (fr)
Other versions
WO2003079411A2 (en
Inventor
Mark Burton Holbrook
David Robert Reeve
Robert Bruce Grant
Original Assignee
Boc Group Plc
Mark Burton Holbrook
David Robert Reeve
Robert Bruce Grant
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boc Group Plc, Mark Burton Holbrook, David Robert Reeve, Robert Bruce Grant filed Critical Boc Group Plc
Priority to EP03744445A priority Critical patent/EP1485937A2/en
Priority to AU2003226491A priority patent/AU2003226491A1/en
Priority to JP2003577311A priority patent/JP2005521242A/en
Priority to US10/508,628 priority patent/US20050103438A1/en
Priority to KR10-2004-7014351A priority patent/KR20040094794A/en
Publication of WO2003079411A2 publication Critical patent/WO2003079411A2/en
Publication of WO2003079411A3 publication Critical patent/WO2003079411A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

A low-pressure processing vessel (3) used for the production of semiconductors is provided with a light-sensitive detector (1) at a distance from the reaction site, for example in the exhaust line (2). The detector (1) is used to detect light emitted by an intermediate which relaxes or recombines with the emission of light at a characteristic wavelength, the intermediate having a long lifetime such that the detector (1) can be positioned in a relatively remote location.
PCT/GB2003/001104 2002-03-15 2003-03-14 Use of light emitting chemical reactions for control of semiconductor production processes WO2003079411A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP03744445A EP1485937A2 (en) 2002-03-15 2003-03-14 Use of light emitting chemical reactions for control of semiconductor production processes
AU2003226491A AU2003226491A1 (en) 2002-03-15 2003-03-14 Use of light emitting chemical reactions for control of semiconductor production processes
JP2003577311A JP2005521242A (en) 2002-03-15 2003-03-14 Use of luminescent chemical reactions to control semiconductor manufacturing processes.
US10/508,628 US20050103438A1 (en) 2002-03-15 2003-03-14 Use of light emitting chemical reactions for control of semiconductor production processes
KR10-2004-7014351A KR20040094794A (en) 2002-03-15 2003-03-14 Use of light emitting chemical reactions for control of semiconductor production processes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0206158.8A GB0206158D0 (en) 2002-03-15 2002-03-15 Use of light emitting chemical reactions for control of semiconductor production processes
GB0206158.8 2002-03-15

Publications (2)

Publication Number Publication Date
WO2003079411A2 WO2003079411A2 (en) 2003-09-25
WO2003079411A3 true WO2003079411A3 (en) 2003-12-18

Family

ID=9933054

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2003/001104 WO2003079411A2 (en) 2002-03-15 2003-03-14 Use of light emitting chemical reactions for control of semiconductor production processes

Country Status (7)

Country Link
US (1) US20050103438A1 (en)
EP (1) EP1485937A2 (en)
JP (1) JP2005521242A (en)
KR (1) KR20040094794A (en)
AU (1) AU2003226491A1 (en)
GB (1) GB0206158D0 (en)
WO (1) WO2003079411A2 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
US5322590A (en) * 1991-03-24 1994-06-21 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
US5966586A (en) * 1997-09-26 1999-10-12 Lam Research Corporation Endpoint detection methods in plasma etch processes and apparatus therefor
US6146492A (en) * 1997-12-30 2000-11-14 Samsung Electronics Co., Ltd. Plasma process apparatus with in situ monitoring, monitoring method, and in situ residue cleaning method
WO2001047009A2 (en) * 1999-12-21 2001-06-28 Lam Research Corporation Method and apparatus for detecting the endpoint of a photoresist stripping process
US20010010255A1 (en) * 1997-12-15 2001-08-02 Ricoh Company, Ltd. Dry etching endpoint detection system
US6322660B1 (en) * 1998-09-30 2001-11-27 Advanced Micro Devices Apparatus and method for remote endpoint detection

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855015A (en) * 1988-04-29 1989-08-08 Texas Instruments Incorporated Dry etch process for selectively etching non-homogeneous material bilayers
US5567640A (en) * 1996-01-11 1996-10-22 Vanguard International Semiconductor Corporation Method for fabricating T-shaped capacitors in DRAM cells
US6942811B2 (en) * 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US6716300B2 (en) * 2001-11-29 2004-04-06 Hitachi, Ltd. Emission spectroscopic processing apparatus

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5322590A (en) * 1991-03-24 1994-06-21 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
US5966586A (en) * 1997-09-26 1999-10-12 Lam Research Corporation Endpoint detection methods in plasma etch processes and apparatus therefor
US20010010255A1 (en) * 1997-12-15 2001-08-02 Ricoh Company, Ltd. Dry etching endpoint detection system
US6146492A (en) * 1997-12-30 2000-11-14 Samsung Electronics Co., Ltd. Plasma process apparatus with in situ monitoring, monitoring method, and in situ residue cleaning method
US6322660B1 (en) * 1998-09-30 2001-11-27 Advanced Micro Devices Apparatus and method for remote endpoint detection
WO2001047009A2 (en) * 1999-12-21 2001-06-28 Lam Research Corporation Method and apparatus for detecting the endpoint of a photoresist stripping process

Also Published As

Publication number Publication date
GB0206158D0 (en) 2002-04-24
WO2003079411A2 (en) 2003-09-25
AU2003226491A1 (en) 2003-09-29
JP2005521242A (en) 2005-07-14
KR20040094794A (en) 2004-11-10
AU2003226491A8 (en) 2003-09-29
EP1485937A2 (en) 2004-12-15
US20050103438A1 (en) 2005-05-19

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