WO2003010798A2 - Bonding of light emitting diodes having shaped substrates and collets for bonding of light emitting diodes having shaped substrates - Google Patents
Bonding of light emitting diodes having shaped substrates and collets for bonding of light emitting diodes having shaped substrates Download PDFInfo
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- WO2003010798A2 WO2003010798A2 PCT/US2002/023067 US0223067W WO03010798A2 WO 2003010798 A2 WO2003010798 A2 WO 2003010798A2 US 0223067 W US0223067 W US 0223067W WO 03010798 A2 WO03010798 A2 WO 03010798A2
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present invention relates to semiconductor devices, and more particularly to devices for use in mounting semiconductor devices to a submount in a flip-chip configuration.
- GaN-based light emitting diodes typically comprise an insulating or semiconducting substrate such as SiC or sapphire on which a plurality of GaN-based epitaxial layers are deposited.
- the epitaxial layers comprise an active region having a p-n junction that emits light when energized.
- a typical LED is mounted substrate side down onto a submount, also called a package or lead frame (hereinafter referred to as a "submount").
- Figure 1 schematically illustrates a conventional LED having an n-type SiC substrate 10, an active region 12 comprising an n-GaN-based layer 14 and a p-GaN-based layer 16 grown on the substrate and patterned into a mesa.
- a metal p- electrode 18 is deposited on the p-GaN layer 1 and a wire bond connection 28 is made to a bond pad 20 on the p-electrode 18.
- An n-electrode 22 on the conductive substrate is attached to metallic submount 24 using a conductive epoxy 26.
- the conductive epoxy 26 usually silver epoxy
- the LED is pressed into the epoxy 26.
- the epoxy is then heat cured which causes it to harden, providing a stable and electrically conductive mount for the LED chip.
- Light generated in the active region 12 is directed up and out of the device. However, a substantial amount of the generated light may be transmitted into the substrate and absorbed by the epoxy 26.
- Flip-chip mounting of LEDs involves mounting the LED onto the submount substrate side up. Light is then extracted and emitted through the transparent substrate.
- Flip chip mounting may be an especially desirable technique for mounting SiC-based LEDs. Since SiC has a higher index of refraction than GaN, light generated in the active region does not internally reflect (i.e. reflect back into the GaN-based layers) at the GaN/SiC interface.
- Flip chip mounting of SiC-based LEDs may improve the effect of certain chip-shaping techniques known in the art.
- Flip chip packaging of SiC LEDs may have other benefits as well, such as improved heat dissipation, which may be desirable depending on the particular application for the chip.
- FIG. 2 One problem with flip-chip mounting is illustrated in Figure 2. Namely, when a chip is flip-chip mounted on a conductive submount or package using conventional techniques, a conductive die attach material 26 is deposited on the chip and/or on the submount 24, and the chip is pressed into the submount 24. This can cause the viscous conductive die attach material 26 to squeeze out and make contact with the n-type layers 14 and 10 in the device, thereby forming a Schottky diode connection that short-circuits the p-n junction in the active region with predictably undesirable results. Thus, improvements in the flip-chip mounting of LEDs may be desirable.
- Embodiments of the present invention provide for bonding of flip-chip mounted light emitting devices having an irregular configuration. Certain embodiments of the present invention bond a light emitting diode having a shaped substrate to a submount by applying forces to the substrate in a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Such bonding may, for example, be provided by thermosonic and/or thermocompression bonding. In certain embodiments of the present invention, a light emitting diode is bonded to a submount is by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to bond the light emitting diode to the submount.
- force is applied to the shaped substrate by mating a collet to the surface of the substrate oblique to the direction of motion and moving the collet in the direction of motion.
- a mating of the collet may be provided by seating a collet having a mating surface corresponding to an oblique surface of the substrate so that the mating surface of the collet contacts the oblique surface of the substrate.
- the mating surface of the collet is a fixed surface relative to a body of the collet. In other embodiments of the present invention, the mating surface of the collet is a moveable surface relative to a body of the collet.
- the collet is seated by placing the collet over the light emitting diode and applying a vacuum pressure to the collet.
- the light emitting diode is a gallium nitride based light emitting diode having a silicon carbide shaped substrate.
- the silicon carbide shaped substrate may have a cubic portion and a truncated pyramidal portion adjacent the cubic portion. In such cases, force is applied to sidewalls of the truncated pyramidal portion of the silicon carbide substrate.
- a collet for bonding light emitting diodes having a shaped substrate to a submount has a body having a chamber therein and an opening in communication with the chamber and adapted to receive the light emitting diode.
- the collet also includes means for mating surfaces of the collet to surfaces of the shaped substrate that are oblique to a direction of motion of the collet.
- the means for mating surfaces of the collet to the shaped substrate is provided by fixed surfaces of the collet defining the opening and disposed at an angle corresponding to an angle of the surfaces of the shaped substrate that are oblique to the direction of motion.
- the body may include a top portion and vertical side portions defining the chamber and an opening for inducing a vacuum in the chamber.
- the body includes spaced apart side portions defining the chamber.
- the fixed surfaces of the collet may be provided by angled surfaces at a terminus of the side portions.
- the side portions may be spaced apart a distance corresponding to a dimension of the surfaces of the shaped substrate that are oblique to the direction of motion.
- the body may also include a top portion and an opening for inducing a vacuum pressure in the chamber. The side portions may then be vertical side portions.
- the body includes a top portion and vertical side portions defining the chamber and an opening for inducing a vacuum in the chamber.
- the side portions may be horizontal side portions that extend from the vertical side portions and are spaced apart from the top portion.
- the means for mating surfaces of the collet to the shaped substrate is provide by surfaces of the collet defining the opening and that are moveable with respect to the body and are configured to adjust to an angle corresponding to an angle of the surfaces of the shaped substrate that are oblique to the direction of motion.
- the body may include a top portion and vertical side portions defining the chamber and an opening for inducing a vacuum in the chamber.
- the body may include spaced apart horizontal side portions.
- the moveable surfaces of the collet may be provided by moveable end portions of the horizontal side portions, the moveable end portions being configured to substantially conform to the angle of the shaped substrate and are spaced apart a distance corresponding to a dimension of the surfaces of the shaped substrate that are oblique to the direction of motion.
- the moveable end portions are hinged to rotate about an end of the horizontal side portions.
- the body further includes a top portion and vertical side portions that connect the top portion to the horizontal side portions defining the chamber and an opening for inducing a vacuum pressure in the chamber.
- the horizontal side portions may also be moveably connected to the vertical side portions.
- the horizontal side portions may be hinged to the vertical side portions.
- the collet is adapted for use with a gallium nitride based light emitting diode having a silicon carbide shaped substrate.
- the collet may also be adapted for use with a silicon carbide shaped substrate having a truncated pyramidal portion and wherein the means for mating comprises means for mating surfaces of the collet to sidewalls of the truncated pyramidal portion of the shaped silicon carbide substrate.
- Still further embodiments of the present invention provide a collet for bonding a light emitting diode having a shaped substrate to a submount.
- the collet includes a body having a chamber therein and an opening in the body in communication with the chamber configured such that a portion of the shaped substrate extends into the chamber without contacting the body.
- the colet further includes means, operably associated with the chamber, for engaging the substrate to bond the light emitting diode to the submount while maintaining internal shear forces of the substrate below a shear failure threshold of the substrate.
- the means for engaging is provided by fixed surfaces of the collet defining the opening and disposed at an angle corresponding to an angle of the surfaces of the shaped substrate that are oblique to the direction of motion.
- the body may include a top portion and vertical side portions defining the chamber and an opening for inducing a vacuum in the chamber.
- the body includes spaced apart side portions defining the opening and wherein the fixed surfaces of the collet comprise angled surfaces at a terminus of the side portions, wherein the side portions are spaced apart a distance corresponding to a dimension of the surfaces of the shaped substrate that are oblique to the direction of motion.
- the body may also include a top portion defining the chamber and an opening for inducing a vacuum in the chamber and the side portions may be vertical side portions.
- the body includes a top portion and vertical side portions and an opening for inducing a vacuum in the chamber and the side portions are horizontal side portions that extend from the vertical side portions and are spaced apart from the top portion.
- the means for engaging is provided by moveable surfaces of the collet defining the opening and configured to adjust to an angle corresponding to an angle of the surfaces of the shaped substrate that are oblique to the direction of motion.
- the body may include a top portion and vertical side portions defining the chamber and an opening for inducing a vacuum in the chamber.
- the body may also include spaced apart horizontal side portions and wherein the moveable surfaces of the collet are moveable end portions of the horizontal side portions, the moveable end portions being configured to substantially conform to the angle of the shaped substrate and being spaced apart a distance corresponding to a dimension of the surfaces of the shaped substrate that are oblique to the direction of motion to thereby define the opening.
- the moveable end portions are hinged to rotate about an end of the horizontal side portions.
- the body may also include a top portion and an opening for inducing a vacuum in the chamber and vertical side portions that connect the top portion to the horizontal side portions.
- the horizontal side portions may also be moveably connected to the vertical side portions.
- the horizontal side portions may be hinged to the vertical side portions.
- a collet for bonding a light emitting diode to a submount having a body having a chamber therein, an opening in the body in communication with the chamber and configured to receive the light emitting diode and fixed surfaces of the collet at the opening that contact a shaped substrate of the light emitting diode, the fixed surfaces defining the opening and being disposed at an angle corresponding to an angle of the surfaces of the shaped substrate that are oblique to a direction of motion of the collet during bonding.
- the body includes spaced apart side portions and the fixed surfaces of the collet may be angled surfaces at a terminus of the side portions.
- the side portions are spaced apart a distance corresponding to a dimension of the surfaces of the shaped substrate that are oblique to the direction of motion.
- the body includes a top portion and vertical side portions defining the chamber and an opening for inducing a vacuum in the chamber.
- the side portions may be horizontal side portions that extend from the vertical side portions and are spaced apart from the top portion.
- a collet for bonding a light emitting diode to a submount includes a body having a chamber therein, an opening in the body in communication with the chamber and configured to receive the light emitting diode and moveable surfaces of the collet at the opening that are moveable in relation to the body and that contact a shaped substrate, the moveable surfaces being configured to adjust to an angle corresponding to an angle of the surfaces of the shaped substrate that are oblique to a direction of motion of the collet during bonding.
- the body includes spaced apart horizontal side portions and the moveable surfaces of the collet are moveable end portions of the horizontal side portions, the moveable end portions being configured to substantially conform to the angle of the shaped substrate and are spaced apart a distance corresponding to a dimension of the surfaces of the shaped substrate that are oblique to the direction of motion.
- the moveable end portions are hinged to rotate about an end of the horizontal side portions.
- the body includes a top portion defining the chamber, an opening for inducing a vacuum in the chamber and vertical side portions that connect the top portion to the horizontal side portions.
- the horizontal side portions may be moveably connected to the vertical side portions.
- a system for bonding a light emitting diode having a shaped substrate to a submount includes means for engaging the substrate while maintaining internal shear forces of the substrate below a shear failure threshold of the substrate when force is applied to the shaped substrate to bond the light emitting diode to the submount and means for moving the means for engaging to apply force to the substrate to bond the light emitting diode to the substrate.
- the means for engaging comprises means for contacting the shaped substrate on a surface of the shaped substrate that is oblique to a direction of motion of the shaped substrate.
- the means for contacting is provided by walls of a collet that are in a fixed position with respect to a body of the collet, the collet being configured to receive the light emitting diode.
- the means for contacting is provided by walls of the collet that are moveable with respect to a body of the collet, the collet being configured to receive the light emitting diode.
- a collet for bonding light emitting diodes having a shaped substrate to a submount includes a body having a chamber and an opening in communication with the chamber and adapted to receive the light emitting diode.
- the opening has a portion proximate to the chamber and a portion distal to the chamber.
- the collet also has mating surfaces associated with the opening and disposed at an oblique angle with regard to an axis connecting distal portions of the opening that mate to surfaces of the shaped substrate.
- the mating surfaces are fixed surfaces of the collet defining the opening and disposed at an angle corresponding to an angle of the surfaces of the shaped substrate.
- the body may have a top portion and vertical side portions defining the chamber and an opening for inducing a vacuum in the chamber.
- the body may be spaced apart side portions defiriing the chamber and the fixed surfaces of the collet may be angled surfaces at a terminus of the side portions.
- the side portions are spaced apart a distance corresponding to a dimension of the surfaces of the shaped substrate to which the fixed surfaces mate.
- the body may also include a top portion and an opening for inducing a vacuum pressure in the chamber and the side portions may be vertical side portions.
- the side portions may also include horizontal side portions that extend from the vertical side portions and are spaced apart from the top portion.
- the mating surfaces are provided by surfaces of the collet defining the opening and that are moveable with respect to the body and are configured to adjust to an angle corresponding to an angle of the surfaces of the shaped substrate to which the surfaces of the collet defining the opening mate.
- the body may include a top portion and vertical side portions defining the chamber and an opening for inducing a vacuum in the chamber.
- the body may also include spaced apart horizontal side portions and the moveable surfaces of the collet may be moveable end portions of the horizontal side portions.
- the moveable end portions may be configured to substantially conform to the angle of the shaped substrate and may be spaced apart a distance corresponding to a dimension of the surfaces of the shaped substrate to which the moveable end portions mate.
- the moveable end portions may be hinged to rotate about an end of the horizontal side portions.
- the body may also include vertical side portions that connect the top portion to the horizontal side portions defining the chamber.
- the horizontal side portions may be moveably connected to the vertical side portions.
- the horizontal side portions may be hinged to the vertical side portions.
- the collet is adapted for use with a gallium nitride based light emitting diode having a silicon carbide shaped substrate.
- the collet may also be adapted for use with a silicon carbide shaped substrate having a truncated pyramidal portion and wherein the mating surfaces mate with angled sidewalls of the truncated pyramidal portion of the shaped silicon carbide substrate.
- Figure 1 is a schematic illustration of a convention LED
- Figure 2 is a schematic illustration of a flip-chip mounted LED utilizing conventional techniques
- Figure 3 is a schematic illustration of a LED having a shaped substrate
- Figure 4 is a plan view of an LED having a shaped substrate
- Figures 5A and 5B are side and top views of a collet according to embodiments of the present invention
- Figure 6 is a side view of a collet according to further embodiments of the present invention.
- Figure 7 is a side view of a collet according to further embodiments of the present invention.
- Embodiments of the present invention provide for bonding of an LED chip to a submount.
- Embodiments of the invention include methods for thermosonically and/or thermocompression bonding a shaped chip and collet designs for manipulating a shaped chip.
- a chip or die may be picked up and/or bonded on a single tool and may utilize a single collet for picking up the die and for bonding the die thermosonically and/or through thermocompression.
- Figure 3 illustrates an LED chip having a shaped substrate such as those described in the above referenced patent application.
- the LED chip 30 shown in Figure 3 has a substrate 10 having a first surface 21 and a second surface 23.
- the active region 12 of the light emitting device is formed by a GaN based n-type layer 14 and a p-type GaN based layer 16 on the first surface 21.
- a p-type electrode 18 is on the p-type GaN based layer 16.
- the n-type electrode 22 is on the second surface 23 of the substrate 10.
- Substrate 10 is characterized by the slanted sidewall portions 15 that generally form a truncated pyramid shape 19 such that the base of the truncated pyramid is located adjacent, either directly adjacent or adjacent but spaced apart from, the first surface 21.
- Shaped substrate 10 is further characterized by a generally cubic section 25 having sidewalls 17, each of which forms an angle 0 with an adjacent slanted sidewall portion 15.
- Figure 4 shows a plan view of the shaped substrate chip 30 of Figure 3.
- the LED chip 30 further includes a metal pad 31 that may be thermosonically bonded to a submount.
- the metal pad 31 preferably comprises Au or a suitable metal alloy such as Au Sn or Pb/Sn.
- Embodiments of the present invention are described herein with reference to a GaN based LED on a SiC substrate 10 and having a n-type layer 14, a p-type layer 16 and a p-electrode 18.
- the present invention should not be construed as limited to such structures but may be utilized with other structures having a shaped substrate.
- Light emitting devices for use in embodiments of the present invention may be gallium nitride based LEDs or lasers fabricated on a silicon carbide substrate such as those devices manufactured and sold by Cree, Inc. of Durham ' , North Carolina.
- the present invention may be suitable for use with LEDs and/or lasers as described in United States Patent Nos.
- the light emitting devices may include a p-electrode that provides a reflecting layer to reflect light generated in the active region back through the device.
- Reflective p-electrodes and related structures are described in U.S. Patent Application Serial No. 10/057,821, entitled “LIGHT EMITTING DIODES INCLUDING SUBSTRATE MODIFICATIONS FOR LIGHT EXTRACTION AND MANUFACTURING METHODS THEREFOR” filed January 25, 2002 (Attorney Docket 5308-162), which has been incorporated by reference as if set forth fully herein.
- Thermosonic bonding is, generally, a technique whereby a device is mounted to a substrate or submount using mechanical vibration, heat and pressure, thereby creating a bond, that may be conductive, between the device and the submount.
- Thermocompression bonding is, generally, a technique whereby a device is mounted to a substrate or submount using heat and pressure, thereby bonding the device to the substrate.
- a vacuum collet is used to pick up the device and physically place it in contact with the submount. Once the device is in contact with the submount, force is applied to the device through the collet, and, for thermosonic bonding, the collet is vibrated. Through a combination of heat, vibration and pressure, the device is thermosonically welded to the submount.
- a metal pad layer made of a metal, such as Au, that will form a bond when heat, pressure and, optionally, vibration, are applied is utilized.
- Other potential metals and alloys are Au/Sn and Pb/Sn.
- the metal pad layer may be provided on the device or a metallic preform may be provided on the submount and the metal pad and/or metallic preform thermosonically bonded and/or thermocompression bonded such that the device and the submount are bonded to each other.
- a conventional collet design that contacts the sidewalls 17 of the cubic portion 25 may not be desirable. For example, if a conventional collet were used to mechanically vibrate the chip while attached only to cubic portion 25, the shear forces generated during vibration could cause the cubic portion 25 to separate from the chip, rendering the chip useless and lowering production yields.
- certain embodiments of the present invention provide for bonding a light emitting device having a shaped substrate utilizing a vacuum collet that contacts the shaped substrate in a manner that reduces shear forces in the substrate when the collet applies force to the substrate.
- Such forces may be reduced to below a failure threshold, such as, for example, a threshold that results in the substrate breaking.
- the particular failure threshold may depend on the configuration of the shaped substrate and the material from which the substrate is made.
- embodiments of the present invention impart forces to the substrate 10 by contacting at least a portion of the slanted sidewalls 15 of the truncated pyramidal portion 19 of the substrate 10.
- Examples of collets according to embodiments of the present invention are illustrated in Figures 5A through 7 and are described in further detail herein. Such collets contact at least the sidewalls 15 of the truncated pyramidal portion 19 of the substrate 10 and may, optionally, also contact the sidewalls 1 of the cubic portion 25 of the substrate 10.
- Figures 5 A and 5B illustrate a collet 40 according to embodiments ofthe present invention.
- Figure 5A is a cross section ofthe collet 40 illustrated in top- view in Figure 5B and taken along the line 5A-5A'.
- the collet 40 includes a body 41 having vertical sidewalls 42 connected to a top wall 43 to form a chamber 45 having an opening 47 in communication with the chamber 45 to receive the light emitting device.
- Top wall 43 includes an opening 46 to the chamber 45 through which a vacuum is drawn.
- Horizontal portions 44 extend inward from the sidewalls 42 of collet 40.
- the horizontal portions 44 have end faces 48 that physically contact the slanted sidewalls 15 of the substrate 10 when the collet is placed over the LED chip 30.
- the end faces 48 ofthe horizontal portions 44 may be configured to contact the sidewalls 15 based on the spacing ofthe horizontal portions 44 and the angle the end faces 48 ofthe horizontal portions 44 make with respect to a plane connecting opposing ones of either the top or bottom ofthe end faces 48.
- the planes connecting the top or bottom ofthe end faces will be parallel.
- the angle the end faces 48 make with the connecting plane may be based on the angle 0 that the sidewalls 15 make with the sidewalls 17. This angle may be substantially equal to 0 minus 90°.
- the angle ofthe end faces may be measured with reference to an axis perpendicular to the connection plane as illustrated in Figure 4, the angle may be substantially the same as 0.
- the horizontal portions 44 should be spaced apart a distance sufficient to allow the cubic portion 25 ofthe LED chip 30 to pass therebetween but not so large that the truncated pyramidal portion 19 also passes therebetween.
- the collet 40 may comprise a single unitized member or may include two or more members interconnected to provide the configuration illustrated in Figure 5. Furthermore, the collet 40 may be made of a metallic material, such as aluminum, steel or the like or may be made of a non-metallic material, such as a plastic, ceramic or other such non-metallic material. The collet 40 may be fabricated by casting, machining, molding, combinations thereof or other such suitable fabrication process. In operation, the collet 40 is placed over the LED chip 30 such that the cubic portion 25 ofthe substrate 10 extends into the chamber 45 and the end faces 48 contact the sidewalls 15 of the substrate 10.
- Movement ofthe collet 40 may be utilized to thermosonically bond the LED chip 30, however, the forces applied to the LED chip 30 are applied to the slanted sidewalls 15, thereby reducing shear forces at the boundary between the cubic portion 25 and the truncated pyramidal portion 19 of the substrate 10.
- the LED chip 30 is thermosonically bonded by application of forces by contacting a surface ofthe substrate 10 ofthe chip 30 that is oblique to the direction of motion ofthe LED chip 30.
- the angle of contact with the substrate 10 through which force is applied to the LED chip 30 may be either acute or obtuse to the direction of movement.
- the LED chip 30 may be thermocompression bonded utilizing the " collet 40 by application of force to the pyramidal portion 19 of the substrate 10. Such force may be applied through the end faces 40 ofthe collet 40.
- Collet designs according to further embodiments ofthe present invention are illustrated in Figures 6 and 7.
- the horizontal portions 44 of Figure 5 have been replaced in the collet 50 illustrated in Figure 6 by the terminating faces of the side portions 51.
- the collet 50 has a body 61 that includes vertical sidewalls 52 connected to a top wall 53 to form a chamber 55 and an opemng 57 in communication with the chamber 55 that receives the light emitting device.
- Top wall 53 includes an opening 56 to the chamber 55 through which a vacuum is drawn.
- the vertical sidewalls 52 ofthe side portions 51 terminate in slanted end faces 58.
- the end faces 58 ofthe side portions 51 may be configured to contact the sidewalls 15 based on the spacing ofthe side portions 51 and the angle the end faces 58 ofthe side portions 51 make with respect to a plane connecting opposing ones of either the top or bottom ofthe end faces 58. If the end faces 58 are the same length, the planes connecting the top or bottom ofthe end faces will be parallel.
- the angle the end faces 58 make with the connecting plane may be based on the angle 0 that the sidewalls 15 make with the sidewalls 17. This angle may be substantially equal to 0 -90°.
- the angle ofthe end faces 58 may be measured with reference to an axis perpendicular to the connection plane as illustrated in Figure 6, the angle may be substantially the same as 0.
- the side portions 51 should be spaced apart a distance sufficient to allow the cubic portion 25 ofthe LED chip 30 to pass therebetween but not so large that the truncated pyramidal portion 19 also passes therebetween.
- the collet 50 may comprise a single unitized member or may include two or more members interconnected to provide the configuration illustrated in Figure 6. Furthermore, the collet 50 may be made of a metallic material, such as aluminum, steel or the like or may be made of a non-metallic material, such as a plastic, ceramic or other such non-metallic material. The collet 50 may be fabricated by casting, machining, molding, combinations thereof or other such suitable fabrication process.
- FIG. 7 illustrates a further collet 70 according to embodiments ofthe present invention
- the horizontal portions 74 comprise hinged end sections 77 that permit the collet 70 to form a tight seal with the slanted portions 15 of the LED chip 30 even if the collet is slightly misaligned or the angles of slanted sidewalls 15 are slightly off with respect to the angles ofthe moveable end sections 77.
- the collet 70 has a body 71 that include vertical sidewalls 72 connected to a top wall 73 to form a chamber 79 and an opening 80 in communication with the chamber 79 so as to receive the light emitting device substrate 10 as illustrated in Figure 7.
- Top wall 73 includes an opening 76 to the chamber 79 through which a vacuum is drawn.
- the horizontal portions 74 may be hinged about the respective pivot points 75 so as to rotate about the respective pivot points 75.
- end sections 77 may be hinged to pivot about the pivot points 78 so as to allow the end sections 77 to mate to the oblique surface ofthe slanted portions 15 of the LED chip 30.
- the collet 70 may comprise portions of single unitized members or may include two or more members interconnected to provide the configuration illustrated in Figure 7. Furthermore, the collet 70 may be made of a metallic material, such as aluminum, steel or the like or may be made of a non-metallic material, such as a plastic, ceramic or other such non-metallic material. The collet 70 may be fabricated by casting, machining, molding, combinations thereof or other such suitable fabrication process. For the collets according to embodiments ofthe present invention, as exemplified by the collets 40, 50 and 70, the size ofthe openings 46, 56 and 76 may be large enough to overcome any imperfections in the mating ofthe collet 40, 50 or 70 to the substrate 10 such that the lower pressure area may be maintained.
- Such sizing may require different configuration ofthe collet 40, for example, to allow a larger opening for application ofthe vacuum pressure.
- the particular configuration ofthe collet may be modified such that a majority ofthe pressure drop between the opening 46, 56 or 76 and the outer environment is provided across any openings or imperfections in the region of contact between the collet and the substrate 10. In such a way the substrate 10 may be maintained in the collet 40, 50 or 70 through the application of vacuum pressure for movement and/or bonding.
- embodiments ofthe present invention provide means for mating surfaces of a collet to a shaped substrate.
- Embodiments ofthe present invention also provide means for engaging the substrate while maintaining internal shear forces ofthe substrate below about a shear failure threshold ofthe substrate when force is applied to the shaped substrate to thermosonically bond the light emitting diode to the submount.
- the means for mating and/or means for engaging the substrate maybe provided by fixed surfaces of a collet or by moveable, adjustable and/or conforming surfaces that contact a shaped substrate at an oblique angle with regard to motion of the collet.
- the present invention has been described with reference to a rectangular chamber formed by the collet other shapes could be utilized.
- a pyramidal chamber may be formed or any other shape that provides a cavity into which the light emitting diode may be received.
- systems for thermosonically and/or thermocompression bonding a light emitting diode having a shaped substrate to a submount are provided.
- the above described collets may be used with conventional systems for thermosonic and/or thermocompression bonding.
- the conventional system may provide means for moving the collets to apply force to the substrates to thermosonically bond and/or thermocompression bond the light emitting diode to the submount.
- the substrate may include a cylindrical portion and a frusto-conical portion and/or a conical portion.
- embodiments ofthe present invention may provide a chamber with a substantially circular opening where the sidewalls ofthe opening are configured to mate with the sidewalls ofthe conical and/or frusto-conical portions ofthe substrate.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002454735A CA2454735A1 (en) | 2001-07-23 | 2002-07-22 | Bonding of light emitting diodes having shaped substrates and collets for bonding of light emitting diodes having shaped substrates |
EP02763308A EP1410426B1 (en) | 2001-07-23 | 2002-07-22 | Bonding of light emitting diodes having shaped substrates and collets for bonding of light emitting diodes having shaped substrates |
KR10-2004-7001064A KR20040029382A (en) | 2001-07-23 | 2002-07-22 | Bonding of light emitting diodes having shaped substrates and collets for bonding of light emitting diodes having shaped substrates |
AT02763308T ATE548752T1 (en) | 2001-07-23 | 2002-07-22 | CONNECTING LIGHT EMITTING DIODES TO SPECIALLY SHAPED SUBSTRATES AND COLLET FOR CONNECTING LIGHT EMITTING DIODES TO SPECIALLY SHAPED SUBSTRATES |
JP2003516088A JP4594618B2 (en) | 2001-07-23 | 2002-07-22 | BOARDING OF LIGHT EMITTING DIODE WITH FORMED SUBSTRATE AND COLLET FOR BODYING LIGHT EMITTING DIODE WITH FORMED SUBSTRATE |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US30723401P | 2001-07-23 | 2001-07-23 | |
US60/307,234 | 2001-07-23 | ||
US10/185,350 | 2002-06-27 | ||
US10/185,350 US6747298B2 (en) | 2001-07-23 | 2002-06-27 | Collets for bonding of light emitting diodes having shaped substrates |
Publications (2)
Publication Number | Publication Date |
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WO2003010798A2 true WO2003010798A2 (en) | 2003-02-06 |
WO2003010798A3 WO2003010798A3 (en) | 2003-10-16 |
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PCT/US2002/023067 WO2003010798A2 (en) | 2001-07-23 | 2002-07-22 | Bonding of light emitting diodes having shaped substrates and collets for bonding of light emitting diodes having shaped substrates |
Country Status (10)
Country | Link |
---|---|
US (2) | US6747298B2 (en) |
EP (1) | EP1410426B1 (en) |
JP (1) | JP4594618B2 (en) |
KR (1) | KR20040029382A (en) |
CN (1) | CN1305108C (en) |
AT (1) | ATE548752T1 (en) |
CA (1) | CA2454735A1 (en) |
MY (1) | MY138237A (en) |
TW (1) | TW557588B (en) |
WO (1) | WO2003010798A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6747298B2 (en) * | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
JP2007535823A (en) * | 2004-04-28 | 2007-12-06 | クリー インコーポレイテッド | LED bonding structure and manufacturing method of LED bonding structure |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4602079B2 (en) | 2002-07-22 | 2010-12-22 | クリー・インコーポレーテッド | LIGHT EMITTING DIODE INCLUDING BARRIER LAYER AND METHOD FOR MANUFACTURING SAME |
JP2004128057A (en) * | 2002-09-30 | 2004-04-22 | Fuji Photo Film Co Ltd | Light emitting device and its manufacturing method |
US7009199B2 (en) * | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
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US20040188696A1 (en) * | 2003-03-28 | 2004-09-30 | Gelcore, Llc | LED power package |
US7419912B2 (en) * | 2004-04-01 | 2008-09-02 | Cree, Inc. | Laser patterning of light emitting devices |
JP4996463B2 (en) * | 2004-06-30 | 2012-08-08 | クリー インコーポレイテッド | Chip scale method for packaging light emitting device and light emitting device packaged on chip scale |
US8513686B2 (en) * | 2004-09-22 | 2013-08-20 | Cree, Inc. | High output small area group III nitride LEDs |
US7259402B2 (en) * | 2004-09-22 | 2007-08-21 | Cree, Inc. | High efficiency group III nitride-silicon carbide light emitting diode |
US8174037B2 (en) * | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US7432536B2 (en) | 2004-11-04 | 2008-10-07 | Cree, Inc. | LED with self aligned bond pad |
US8288942B2 (en) * | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
TWI422044B (en) * | 2005-06-30 | 2014-01-01 | Cree Inc | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
US8052794B2 (en) * | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
KR20080106402A (en) | 2006-01-05 | 2008-12-05 | 일루미텍스, 인크. | Separate optical device for directing light from an led |
DE102006015788A1 (en) * | 2006-01-27 | 2007-09-13 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
KR20140116536A (en) | 2006-05-31 | 2014-10-02 | 크리, 인코포레이티드 | Lighting device and method of lighting |
EP2070123A2 (en) | 2006-10-02 | 2009-06-17 | Illumitex, Inc. | Led system and method |
EP3223313B1 (en) | 2007-01-22 | 2021-04-14 | Cree, Inc. | Monolithic light emitter having multiple light emitting sub-devices |
EP2240968A1 (en) | 2008-02-08 | 2010-10-20 | Illumitex, Inc. | System and method for emitter layer shaping |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US8096671B1 (en) | 2009-04-06 | 2012-01-17 | Nmera, Llc | Light emitting diode illumination system |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
KR200454153Y1 (en) * | 2009-08-21 | 2011-06-17 | 우태욱 | Flowing backward prevention and water volume control function having irrigation gate |
US20110133769A1 (en) * | 2009-12-09 | 2011-06-09 | Industrial Technology Research Institute | Inspection apparatus and method for led package interface |
US11160148B2 (en) | 2017-06-13 | 2021-10-26 | Ideal Industries Lighting Llc | Adaptive area lamp |
US11792898B2 (en) | 2012-07-01 | 2023-10-17 | Ideal Industries Lighting Llc | Enhanced fixtures for area lighting |
US10283681B2 (en) * | 2013-09-12 | 2019-05-07 | Cree, Inc. | Phosphor-converted light emitting device |
JP6252302B2 (en) * | 2014-03-28 | 2017-12-27 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
WO2017059028A1 (en) | 2015-10-01 | 2017-04-06 | Cree, Inc. | Low optical loss flip chip solid state lighting device |
CN106601580B (en) * | 2015-10-19 | 2018-08-24 | 北京北方华创微电子装备有限公司 | Admission gear and reaction chamber |
US10529696B2 (en) | 2016-04-12 | 2020-01-07 | Cree, Inc. | High density pixelated LED and devices and methods thereof |
CN106141963A (en) * | 2016-08-08 | 2016-11-23 | 上海大学 | A kind of mechanical grip for laser collimator lens gripping |
JP7290001B2 (en) | 2017-08-03 | 2023-06-13 | クリーエルイーディー・インコーポレーテッド | High-density pixelated LED chips, chip array devices, and methods of making same |
US10734363B2 (en) | 2017-08-03 | 2020-08-04 | Cree, Inc. | High density pixelated-LED chips and chip array devices |
US11923481B2 (en) | 2018-01-29 | 2024-03-05 | Creeled, Inc. | Reflective layers for light-emitting diodes |
US11031527B2 (en) | 2018-01-29 | 2021-06-08 | Creeled, Inc. | Reflective layers for light-emitting diodes |
US11387389B2 (en) | 2018-01-29 | 2022-07-12 | Creeled, Inc. | Reflective layers for light-emitting diodes |
US10529773B2 (en) | 2018-02-14 | 2020-01-07 | Cree, Inc. | Solid state lighting devices with opposing emission directions |
US10879441B2 (en) | 2018-12-17 | 2020-12-29 | Cree, Inc. | Interconnects for light emitting diode chips |
US10903265B2 (en) | 2018-12-21 | 2021-01-26 | Cree, Inc. | Pixelated-LED chips and chip array devices, and fabrication methods |
US10985294B2 (en) | 2019-03-19 | 2021-04-20 | Creeled, Inc. | Contact structures for light emitting diode chips |
US11094848B2 (en) | 2019-08-16 | 2021-08-17 | Creeled, Inc. | Light-emitting diode chip structures |
EP4052296A1 (en) | 2019-10-29 | 2022-09-07 | Creeled, Inc. | Texturing for high density pixelated-led chips |
US11437548B2 (en) | 2020-10-23 | 2022-09-06 | Creeled, Inc. | Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61196544A (en) * | 1985-02-25 | 1986-08-30 | Rohm Co Ltd | Die-bonding for semiconductor chip |
JPH01214141A (en) | 1988-02-23 | 1989-08-28 | Nec Corp | Flip-chip type semiconductor device |
GB2249428A (en) | 1988-08-11 | 1992-05-06 | Plessey Co Plc | Connections for led arrays |
JPH02144929A (en) * | 1988-11-28 | 1990-06-04 | Hitachi Ltd | Collet and pellet bonding apparatus using same |
US4918497A (en) | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US5027168A (en) | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
JPH02192129A (en) * | 1989-01-19 | 1990-07-27 | Mitsubishi Electric Corp | Bonding device |
JP2722601B2 (en) | 1989-02-06 | 1998-03-04 | 松下電器産業株式会社 | Die bonding apparatus and die bonding method |
US5115545A (en) * | 1989-03-28 | 1992-05-26 | Matsushita Electric Industrial Co., Ltd. | Apparatus for connecting semiconductor devices to wiring boards |
US4966862A (en) | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
JPH03131083A (en) * | 1989-10-17 | 1991-06-04 | Mitsubishi Electric Corp | Manufacture of semiconductor laser device |
US5117279A (en) | 1990-03-23 | 1992-05-26 | Motorola, Inc. | Semiconductor device having a low temperature uv-cured epoxy seal |
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5118584A (en) | 1990-06-01 | 1992-06-02 | Eastman Kodak Company | Method of producing microbump circuits for flip chip mounting |
US5205032A (en) * | 1990-09-28 | 1993-04-27 | Kabushiki Kaisha Toshiba | Electronic parts mounting apparatus |
JPH04152645A (en) | 1990-10-17 | 1992-05-26 | Toshiba Corp | Collet for die bonding use |
RU1827726C (en) * | 1991-06-26 | 1993-07-15 | Ленинградский научно-исследовательский радиотехнический институт | Holder for light-emitting diode |
JPH0529364A (en) | 1991-07-17 | 1993-02-05 | Sharp Corp | Method and apparatus for bonding semiconductor element |
JP2662131B2 (en) * | 1991-12-26 | 1997-10-08 | 松下電器産業株式会社 | Bonding equipment |
US5909280A (en) * | 1992-01-22 | 1999-06-01 | Maxam, Inc. | Method of monolithically fabricating a microspectrometer with integrated detector |
US5265792A (en) | 1992-08-20 | 1993-11-30 | Hewlett-Packard Company | Light source and technique for mounting light emitting diodes |
TW253997B (en) | 1992-09-25 | 1995-08-11 | Philips Electronics Nv | |
US5416342A (en) | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5438477A (en) | 1993-08-12 | 1995-08-01 | Lsi Logic Corporation | Die-attach technique for flip-chip style mounting of semiconductor dies |
US5338944A (en) | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
BE1007905A3 (en) * | 1993-12-23 | 1995-11-14 | Wiele Michel Van De Nv | APPARATUS FOR INSLAGSELEKTIE on a weaving machine. |
JP3054021B2 (en) | 1993-12-27 | 2000-06-19 | 株式会社東芝 | Compound semiconductor device |
JPH07302858A (en) | 1994-04-28 | 1995-11-14 | Toshiba Corp | Semiconductor package |
US5539153A (en) | 1994-08-08 | 1996-07-23 | Hewlett-Packard Company | Method of bumping substrates by contained paste deposition |
US5604135A (en) | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
US5523589A (en) * | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
US5694482A (en) | 1994-11-08 | 1997-12-02 | Universal Instruments Corporation | System and method for locating solder bumps on semiconductor chips or chip carriers |
JPH11505668A (en) | 1995-03-20 | 1999-05-21 | エムシーエヌシー | Solder bump manufacturing method and structure including titanium barrier layer |
US5739554A (en) | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
DE19548046C2 (en) | 1995-12-21 | 1998-01-15 | Siemens Matsushita Components | Method for producing contacts of electrical components suitable for flip-chip assembly |
US6224690B1 (en) | 1995-12-22 | 2001-05-01 | International Business Machines Corporation | Flip-Chip interconnections using lead-free solders |
US5760479A (en) | 1996-02-29 | 1998-06-02 | Texas Instruments Incorporated | Flip-chip die attachment for a high temperature die to substrate bond |
JPH1012929A (en) * | 1996-06-25 | 1998-01-16 | Hitachi Cable Ltd | Mounting structure for light emitting diode |
JP3747577B2 (en) * | 1997-07-10 | 2006-02-22 | 富士通株式会社 | Device layout design method |
EP0898345A3 (en) * | 1997-08-13 | 2004-01-02 | Mitsubishi Chemical Corporation | Compound semiconductor light emitting device and method of fabricating the same |
US5926726A (en) * | 1997-09-12 | 1999-07-20 | Sdl, Inc. | In-situ acceptor activation in group III-v nitride compound semiconductors |
US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
US6189772B1 (en) | 1998-08-31 | 2001-02-20 | Micron Technology, Inc. | Method of forming a solder ball |
US6169294B1 (en) * | 1998-09-08 | 2001-01-02 | Epistar Co. | Inverted light emitting diode |
US6146984A (en) | 1999-10-08 | 2000-11-14 | Agilent Technologies Inc. | Method and structure for uniform height solder bumps on a semiconductor wafer |
US6214733B1 (en) | 1999-11-17 | 2001-04-10 | Elo Technologies, Inc. | Process for lift off and handling of thin film materials |
US6213789B1 (en) | 1999-12-15 | 2001-04-10 | Xerox Corporation | Method and apparatus for interconnecting devices using an adhesive |
US6514782B1 (en) | 1999-12-22 | 2003-02-04 | Lumileds Lighting, U.S., Llc | Method of making a III-nitride light-emitting device with increased light generating capability |
JP3906653B2 (en) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | Image display device and manufacturing method thereof |
US6794684B2 (en) * | 2001-02-01 | 2004-09-21 | Cree, Inc. | Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
JP4649745B2 (en) * | 2001-02-01 | 2011-03-16 | ソニー株式会社 | Light-emitting element transfer method |
US6888167B2 (en) * | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
US6740906B2 (en) * | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
US6747298B2 (en) * | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
-
2002
- 2002-06-27 US US10/185,350 patent/US6747298B2/en not_active Expired - Lifetime
- 2002-07-22 AT AT02763308T patent/ATE548752T1/en active
- 2002-07-22 CA CA002454735A patent/CA2454735A1/en not_active Abandoned
- 2002-07-22 TW TW091116248A patent/TW557588B/en not_active IP Right Cessation
- 2002-07-22 WO PCT/US2002/023067 patent/WO2003010798A2/en active Application Filing
- 2002-07-22 KR KR10-2004-7001064A patent/KR20040029382A/en not_active Application Discontinuation
- 2002-07-22 CN CNB028186443A patent/CN1305108C/en not_active Expired - Lifetime
- 2002-07-22 EP EP02763308A patent/EP1410426B1/en not_active Expired - Lifetime
- 2002-07-22 JP JP2003516088A patent/JP4594618B2/en not_active Expired - Lifetime
- 2002-07-23 MY MYPI20022771A patent/MY138237A/en unknown
-
2004
- 2004-04-27 US US10/832,971 patent/US7341175B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
Title |
---|
None |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6747298B2 (en) * | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
US7341175B2 (en) | 2001-07-23 | 2008-03-11 | Cree, Inc. | Bonding of light emitting diodes having shaped substrates |
JP2007535823A (en) * | 2004-04-28 | 2007-12-06 | クリー インコーポレイテッド | LED bonding structure and manufacturing method of LED bonding structure |
US8076670B2 (en) | 2004-04-28 | 2011-12-13 | Cree, Inc. | LED with conductively joined bonding structure |
Also Published As
Publication number | Publication date |
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JP4594618B2 (en) | 2010-12-08 |
US7341175B2 (en) | 2008-03-11 |
US6747298B2 (en) | 2004-06-08 |
US20040200882A1 (en) | 2004-10-14 |
JP2005510042A (en) | 2005-04-14 |
TW557588B (en) | 2003-10-11 |
CA2454735A1 (en) | 2003-02-06 |
WO2003010798A3 (en) | 2003-10-16 |
EP1410426B1 (en) | 2012-03-07 |
ATE548752T1 (en) | 2012-03-15 |
CN1557014A (en) | 2004-12-22 |
EP1410426A2 (en) | 2004-04-21 |
US20030042507A1 (en) | 2003-03-06 |
MY138237A (en) | 2009-05-29 |
KR20040029382A (en) | 2004-04-06 |
CN1305108C (en) | 2007-03-14 |
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