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Publication numberWO2002065537 A3
Publication typeApplication
Application numberPCT/US2002/003115
Publication date1 May 2003
Filing date31 Jan 2002
Priority date9 Feb 2001
Also published asUS6495436, US6608378, US20020111001, US20030003702, WO2002065537A2
Publication numberPCT/2002/3115, PCT/US/2/003115, PCT/US/2/03115, PCT/US/2002/003115, PCT/US/2002/03115, PCT/US2/003115, PCT/US2/03115, PCT/US2002/003115, PCT/US2002/03115, PCT/US2002003115, PCT/US200203115, PCT/US2003115, PCT/US203115, WO 02065537 A3, WO 02065537A3, WO 2002/065537 A3, WO 2002065537 A3, WO 2002065537A3, WO-A3-02065537, WO-A3-2002065537, WO02065537 A3, WO02065537A3, WO2002/065537A3, WO2002065537 A3, WO2002065537A3
InventorsKie Y Ahn, Leonard Forbes
ApplicantMicron Technology Inc
Export CitationBiBTeX, EndNote, RefMan
External Links: Patentscope, Espacenet
Formation of metal oxide gate dielectric
WO 2002065537 A3
Abstract
Formation of a gate dielectric includes forming a metal oxide on at least a portion of the surface of the substrate assembly by electron beam evaporation. An ion beam is generated using an inert gas to provide inert gas ions for compacting the metal oxide during formation thereof.
Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
WO1998055293A1 *26 May 199810 Dec 1998Corning IncorporatedMethod of forming a silicon layer on a surface
EP0269112A2 *26 Nov 19871 Jun 1988Nissin Electric Company, LimitedMethod of forming a thin crystalline metal film
EP0468758A1 *24 Jul 199129 Jan 1992Semiconductor Energy Laboratory Co., Ltd.Method of forming insulating films, capacitances, and semiconductor devices
EP0565766A2 *5 Jun 199220 Oct 1993Nissin Electric Company, LimitedCopper film coated substrate and method of forming copper film on substrate
EP0570618A1 *15 Jul 199224 Nov 1993Nissin Electric Company, LimitedFilm forming method and apparatus
JPH03202468A * Title not available
JPS63170244A * Title not available
US4759948 *29 Jan 198726 Jul 1988Hitachi, Ltd.Film formation through co-deposition with high and low energy beams
US5122483 *27 Dec 199016 Jun 1992Nissin Electric Company, LimitedMethod of forming a highly insulative thin films
US6144057 *16 May 19977 Nov 2000Semiconductor Energy Laboratory Co., Ltd.Semiconductor memory device including a field effect transistor
Non-Patent Citations
Reference
1 *PATENT ABSTRACTS OF JAPAN vol. 012, no. 446 (C - 546) 24 November 1988 (1988-11-24)
2 *PATENT ABSTRACTS OF JAPAN vol. 015, no. 474 (C - 0890) 3 December 1991 (1991-12-03)
Classifications
International ClassificationC23C14/08, H01L21/28, H01L29/51, H01L21/316, C23C14/22
Cooperative ClassificationC23C14/083, C23C14/22, H01L29/517, C23C14/08, C23C14/081, H01L21/31604, H01L21/28194, H01L2924/0002
European ClassificationH01L21/316B, H01L21/28E2C2D, C23C14/22, C23C14/08H, C23C14/08D, H01L29/51M, C23C14/08
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