US20030172216A1
(en)
*
|
2002-03-07 |
2003-09-11 |
Ralph Gundacker |
Increasing the component capacity of adapters
|
KR100506062B1
(en)
*
|
2002-12-18 |
2005-08-05 |
주식회사 하이닉스반도체 |
Composite Memory Device
|
US7234099B2
(en)
*
|
2003-04-14 |
2007-06-19 |
International Business Machines Corporation |
High reliability memory module with a fault tolerant address and command bus
|
WO2005015564A1
(en)
*
|
2003-08-06 |
2005-02-17 |
Netlist, Inc. |
Non-standard dual in-line memory modules with more than two ranks of memory per module and multiple serial-presence-detect devices to simulate multiple modules
|
US20050086423A1
(en)
*
|
2003-10-17 |
2005-04-21 |
Zitlaw Clifford A. |
System and method for implementing a NAND memory interface
|
US8250295B2
(en)
|
2004-01-05 |
2012-08-21 |
Smart Modular Technologies, Inc. |
Multi-rank memory module that emulates a memory module having a different number of ranks
|
US7532537B2
(en)
|
2004-03-05 |
2009-05-12 |
Netlist, Inc. |
Memory module with a circuit providing load isolation and memory domain translation
|
US7289386B2
(en)
|
2004-03-05 |
2007-10-30 |
Netlist, Inc. |
Memory module decoder
|
US7916574B1
(en)
|
2004-03-05 |
2011-03-29 |
Netlist, Inc. |
Circuit providing load isolation and memory domain translation for memory module
|
KR100648243B1
(en)
*
|
2004-03-19 |
2006-11-24 |
삼성전자주식회사 |
Memory card using nand flash memory
|
ATE362176T1
(en)
*
|
2004-08-13 |
2007-06-15 |
Wan-Chien Chang |
HEAT RADIATION AND PROTECTIVE DEVICE FOR A STORAGE MODULE
|
US7046538B2
(en)
*
|
2004-09-01 |
2006-05-16 |
Micron Technology, Inc. |
Memory stacking system and method
|
US8055833B2
(en)
|
2006-10-05 |
2011-11-08 |
Google Inc. |
System and method for increasing capacity, performance, and flexibility of flash storage
|
US8438328B2
(en)
|
2008-02-21 |
2013-05-07 |
Google Inc. |
Emulation of abstracted DIMMs using abstracted DRAMs
|
US10013371B2
(en)
|
2005-06-24 |
2018-07-03 |
Google Llc |
Configurable memory circuit system and method
|
US9171585B2
(en)
|
2005-06-24 |
2015-10-27 |
Google Inc. |
Configurable memory circuit system and method
|
US8077535B2
(en)
|
2006-07-31 |
2011-12-13 |
Google Inc. |
Memory refresh apparatus and method
|
US9542352B2
(en)
|
2006-02-09 |
2017-01-10 |
Google Inc. |
System and method for reducing command scheduling constraints of memory circuits
|
US8244971B2
(en)
|
2006-07-31 |
2012-08-14 |
Google Inc. |
Memory circuit system and method
|
US20080028136A1
(en)
|
2006-07-31 |
2008-01-31 |
Schakel Keith R |
Method and apparatus for refresh management of memory modules
|
US8327104B2
(en)
|
2006-07-31 |
2012-12-04 |
Google Inc. |
Adjusting the timing of signals associated with a memory system
|
US8089795B2
(en)
|
2006-02-09 |
2012-01-03 |
Google Inc. |
Memory module with memory stack and interface with enhanced capabilities
|
US8090897B2
(en)
|
2006-07-31 |
2012-01-03 |
Google Inc. |
System and method for simulating an aspect of a memory circuit
|
US8335894B1
(en)
|
2008-07-25 |
2012-12-18 |
Google Inc. |
Configurable memory system with interface circuit
|
US8359187B2
(en)
|
2005-06-24 |
2013-01-22 |
Google Inc. |
Simulating a different number of memory circuit devices
|
US8081474B1
(en)
|
2007-12-18 |
2011-12-20 |
Google Inc. |
Embossed heat spreader
|
US8130560B1
(en)
|
2006-11-13 |
2012-03-06 |
Google Inc. |
Multi-rank partial width memory modules
|
US8397013B1
(en)
|
2006-10-05 |
2013-03-12 |
Google Inc. |
Hybrid memory module
|
US20080082763A1
(en)
|
2006-10-02 |
2008-04-03 |
Metaram, Inc. |
Apparatus and method for power management of memory circuits by a system or component thereof
|
US8041881B2
(en)
|
2006-07-31 |
2011-10-18 |
Google Inc. |
Memory device with emulated characteristics
|
US8111566B1
(en)
|
2007-11-16 |
2012-02-07 |
Google, Inc. |
Optimal channel design for memory devices for providing a high-speed memory interface
|
US8796830B1
(en)
|
2006-09-01 |
2014-08-05 |
Google Inc. |
Stackable low-profile lead frame package
|
US7392338B2
(en)
|
2006-07-31 |
2008-06-24 |
Metaram, Inc. |
Interface circuit system and method for autonomously performing power management operations in conjunction with a plurality of memory circuits
|
US8060774B2
(en)
|
2005-06-24 |
2011-11-15 |
Google Inc. |
Memory systems and memory modules
|
US9507739B2
(en)
|
2005-06-24 |
2016-11-29 |
Google Inc. |
Configurable memory circuit system and method
|
US8386722B1
(en)
|
2008-06-23 |
2013-02-26 |
Google Inc. |
Stacked DIMM memory interface
|
US7472220B2
(en)
|
2006-07-31 |
2008-12-30 |
Metaram, Inc. |
Interface circuit system and method for performing power management operations utilizing power management signals
|
US7386656B2
(en)
|
2006-07-31 |
2008-06-10 |
Metaram, Inc. |
Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit
|
GB2444663B
(en)
|
2005-09-02 |
2011-12-07 |
Metaram Inc |
Methods and apparatus of stacking drams
|
US9632929B2
(en)
|
2006-02-09 |
2017-04-25 |
Google Inc. |
Translating an address associated with a command communicated between a system and memory circuits
|
CN103258572B
(en)
|
2006-05-12 |
2016-12-07 |
苹果公司 |
Distortion estimation in storage device and elimination
|
WO2007132457A2
(en)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies Ltd. |
Combined distortion estimation and error correction coding for memory devices
|
WO2007132456A2
(en)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies Ltd. |
Memory device with adaptive capacity
|
JP2008009564A
(en)
*
|
2006-06-27 |
2008-01-17 |
Fujitsu Ltd |
Memory access device, memory access method, memory manufacturing method and program
|
US20080005449A1
(en)
*
|
2006-07-03 |
2008-01-03 |
Phison Electronics Corp. |
Generalized flash memory and method thereof
|
US7724589B2
(en)
|
2006-07-31 |
2010-05-25 |
Google Inc. |
System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits
|
US8060806B2
(en)
*
|
2006-08-27 |
2011-11-15 |
Anobit Technologies Ltd. |
Estimation of non-linear distortion in memory devices
|
US8949555B1
(en)
|
2007-08-30 |
2015-02-03 |
Virident Systems, Inc. |
Methods for sustained read and write performance with non-volatile memory
|
US8074022B2
(en)
*
|
2006-09-28 |
2011-12-06 |
Virident Systems, Inc. |
Programmable heterogeneous memory controllers for main memory with different memory modules
|
US7761624B2
(en)
*
|
2006-09-28 |
2010-07-20 |
Virident Systems, Inc. |
Systems and apparatus for main memory with non-volatile type memory modules, and related technologies
|
US9984012B2
(en)
|
2006-09-28 |
2018-05-29 |
Virident Systems, Llc |
Read writeable randomly accessible non-volatile memory modules
|
US7761625B2
(en)
*
|
2006-09-28 |
2010-07-20 |
Virident Systems, Inc. |
Methods for main memory with non-volatile type memory modules, and related technologies
|
US7761623B2
(en)
*
|
2006-09-28 |
2010-07-20 |
Virident Systems, Inc. |
Main memory in a system with a memory controller configured to control access to non-volatile memory, and related technologies
|
US7761626B2
(en)
*
|
2006-09-28 |
2010-07-20 |
Virident Systems, Inc. |
Methods for main memory in a system with a memory controller configured to control access to non-volatile memory, and related technologies
|
WO2008040028A2
(en)
*
|
2006-09-28 |
2008-04-03 |
Virident Systems, Inc. |
Systems, methods, and apparatus with programmable memory control for heterogeneous main memory
|
US20080082750A1
(en)
*
|
2006-09-28 |
2008-04-03 |
Okin Kenneth A |
Methods of communicating to, memory modules in a memory channel
|
WO2008051940A2
(en)
|
2006-10-23 |
2008-05-02 |
Virident Systems, Inc. |
Methods and apparatus of dual inline memory modules for flash memory
|
WO2008053472A2
(en)
|
2006-10-30 |
2008-05-08 |
Anobit Technologies Ltd. |
Reading memory cells using multiple thresholds
|
US7913055B2
(en)
*
|
2006-11-04 |
2011-03-22 |
Virident Systems Inc. |
Seamless application access to hybrid main memory
|
US8151163B2
(en)
|
2006-12-03 |
2012-04-03 |
Anobit Technologies Ltd. |
Automatic defect management in memory devices
|
KR100816761B1
(en)
*
|
2006-12-04 |
2008-03-25 |
삼성전자주식회사 |
Memory card system including nand flash memory and sram/nor flash memory and data storage method thereof
|
US7554855B2
(en)
*
|
2006-12-20 |
2009-06-30 |
Mosaid Technologies Incorporated |
Hybrid solid-state memory system having volatile and non-volatile memory
|
US8151166B2
(en)
|
2007-01-24 |
2012-04-03 |
Anobit Technologies Ltd. |
Reduction of back pattern dependency effects in memory devices
|
CN101715595A
(en)
|
2007-03-12 |
2010-05-26 |
爱诺彼得技术有限责任公司 |
Adaptive estimation of memory cell read thresholds
|
US8001320B2
(en)
|
2007-04-22 |
2011-08-16 |
Anobit Technologies Ltd. |
Command interface for memory devices
|
WO2008139441A2
(en)
*
|
2007-05-12 |
2008-11-20 |
Anobit Technologies Ltd. |
Memory device with internal signal processing unit
|
US8234545B2
(en)
|
2007-05-12 |
2012-07-31 |
Apple Inc. |
Data storage with incremental redundancy
|
US8209479B2
(en)
|
2007-07-18 |
2012-06-26 |
Google Inc. |
Memory circuit system and method
|
US8259497B2
(en)
*
|
2007-08-06 |
2012-09-04 |
Apple Inc. |
Programming schemes for multi-level analog memory cells
|
US8650343B1
(en)
*
|
2007-08-30 |
2014-02-11 |
Virident Systems, Inc. |
Methods for upgrading, diagnosing, and maintaining replaceable non-volatile memory
|
US9921896B2
(en)
|
2007-08-30 |
2018-03-20 |
Virident Systems, Llc |
Shutdowns and data recovery to avoid read errors weak pages in a non-volatile memory system
|
US8080874B1
(en)
|
2007-09-14 |
2011-12-20 |
Google Inc. |
Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween
|
US8174905B2
(en)
|
2007-09-19 |
2012-05-08 |
Anobit Technologies Ltd. |
Programming orders for reducing distortion in arrays of multi-level analog memory cells
|
WO2009050703A2
(en)
|
2007-10-19 |
2009-04-23 |
Anobit Technologies |
Data storage in analog memory cell arrays having erase failures
|
US8068360B2
(en)
|
2007-10-19 |
2011-11-29 |
Anobit Technologies Ltd. |
Reading analog memory cells using built-in multi-threshold commands
|
US8000141B1
(en)
|
2007-10-19 |
2011-08-16 |
Anobit Technologies Ltd. |
Compensation for voltage drifts in analog memory cells
|
WO2009063450A2
(en)
|
2007-11-13 |
2009-05-22 |
Anobit Technologies |
Optimized selection of memory units in multi-unit memory devices
|
US8225181B2
(en)
|
2007-11-30 |
2012-07-17 |
Apple Inc. |
Efficient re-read operations from memory devices
|
US8209588B2
(en)
|
2007-12-12 |
2012-06-26 |
Anobit Technologies Ltd. |
Efficient interference cancellation in analog memory cell arrays
|
US8456905B2
(en)
*
|
2007-12-16 |
2013-06-04 |
Apple Inc. |
Efficient data storage in multi-plane memory devices
|
US8085586B2
(en)
|
2007-12-27 |
2011-12-27 |
Anobit Technologies Ltd. |
Wear level estimation in analog memory cells
|
US8156398B2
(en)
|
2008-02-05 |
2012-04-10 |
Anobit Technologies Ltd. |
Parameter estimation based on error correction code parity check equations
|
US8856464B2
(en)
*
|
2008-02-12 |
2014-10-07 |
Virident Systems, Inc. |
Systems for two-dimensional main memory including memory modules with read-writeable non-volatile memory devices
|
WO2009102821A2
(en)
*
|
2008-02-12 |
2009-08-20 |
Virident Systems, Inc. |
Methods and apparatus for two-dimensional main memory
|
US8230300B2
(en)
|
2008-03-07 |
2012-07-24 |
Apple Inc. |
Efficient readout from analog memory cells using data compression
|
US8400858B2
(en)
|
2008-03-18 |
2013-03-19 |
Apple Inc. |
Memory device with reduced sense time readout
|
US8059457B2
(en)
|
2008-03-18 |
2011-11-15 |
Anobit Technologies Ltd. |
Memory device with multiple-accuracy read commands
|
US9300773B2
(en)
*
|
2008-05-01 |
2016-03-29 |
Apple Inc. |
Portable electronic device with moisture infiltration indication system
|
US8745314B1
(en)
|
2008-06-24 |
2014-06-03 |
Virident Systems, Inc. |
Methods for a random read and read/write block accessible memory
|
US9513695B2
(en)
|
2008-06-24 |
2016-12-06 |
Virident Systems, Inc. |
Methods of managing power in network computer systems
|
US7995388B1
(en)
|
2008-08-05 |
2011-08-09 |
Anobit Technologies Ltd. |
Data storage using modified voltages
|
US8169825B1
(en)
|
2008-09-02 |
2012-05-01 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells subjected to long retention periods
|
US8949684B1
(en)
|
2008-09-02 |
2015-02-03 |
Apple Inc. |
Segmented data storage
|
US8000135B1
(en)
|
2008-09-14 |
2011-08-16 |
Anobit Technologies Ltd. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8482978B1
(en)
|
2008-09-14 |
2013-07-09 |
Apple Inc. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8239734B1
(en)
|
2008-10-15 |
2012-08-07 |
Apple Inc. |
Efficient data storage in storage device arrays
|
US8261159B1
(en)
|
2008-10-30 |
2012-09-04 |
Apple, Inc. |
Data scrambling schemes for memory devices
|
US8208304B2
(en)
|
2008-11-16 |
2012-06-26 |
Anobit Technologies Ltd. |
Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
|
US8248831B2
(en)
|
2008-12-31 |
2012-08-21 |
Apple Inc. |
Rejuvenation of analog memory cells
|
US8397131B1
(en)
|
2008-12-31 |
2013-03-12 |
Apple Inc. |
Efficient readout schemes for analog memory cell devices
|
US8924661B1
(en)
|
2009-01-18 |
2014-12-30 |
Apple Inc. |
Memory system including a controller and processors associated with memory devices
|
US8228701B2
(en)
*
|
2009-03-01 |
2012-07-24 |
Apple Inc. |
Selective activation of programming schemes in analog memory cell arrays
|
US8832354B2
(en)
|
2009-03-25 |
2014-09-09 |
Apple Inc. |
Use of host system resources by memory controller
|
US8259506B1
(en)
|
2009-03-25 |
2012-09-04 |
Apple Inc. |
Database of memory read thresholds
|
US8238157B1
(en)
|
2009-04-12 |
2012-08-07 |
Apple Inc. |
Selective re-programming of analog memory cells
|
EP2441007A1
(en)
|
2009-06-09 |
2012-04-18 |
Google, Inc. |
Programming of dimm termination resistance values
|
US8479080B1
(en)
|
2009-07-12 |
2013-07-02 |
Apple Inc. |
Adaptive over-provisioning in memory systems
|
US8626997B2
(en)
|
2009-07-16 |
2014-01-07 |
Micron Technology, Inc. |
Phase change memory in a dual inline memory module
|
US8495465B1
(en)
|
2009-10-15 |
2013-07-23 |
Apple Inc. |
Error correction coding over multiple memory pages
|
US8677054B1
(en)
|
2009-12-16 |
2014-03-18 |
Apple Inc. |
Memory management schemes for non-volatile memory devices
|
US8694814B1
(en)
|
2010-01-10 |
2014-04-08 |
Apple Inc. |
Reuse of host hibernation storage space by memory controller
|
US8572311B1
(en)
|
2010-01-11 |
2013-10-29 |
Apple Inc. |
Redundant data storage in multi-die memory systems
|
US20110208900A1
(en)
*
|
2010-02-23 |
2011-08-25 |
Ocz Technology Group, Inc. |
Methods and systems utilizing nonvolatile memory in a computer system main memory
|
US8495330B2
(en)
*
|
2010-04-02 |
2013-07-23 |
Intel Corporation |
Method and apparatus for interfacing with heterogeneous dual in-line memory modules
|
US8694853B1
(en)
|
2010-05-04 |
2014-04-08 |
Apple Inc. |
Read commands for reading interfering memory cells
|
US8572423B1
(en)
|
2010-06-22 |
2013-10-29 |
Apple Inc. |
Reducing peak current in memory systems
|
US8595591B1
(en)
|
2010-07-11 |
2013-11-26 |
Apple Inc. |
Interference-aware assignment of programming levels in analog memory cells
|
US9104580B1
(en)
|
2010-07-27 |
2015-08-11 |
Apple Inc. |
Cache memory for hybrid disk drives
|
US8767459B1
(en)
|
2010-07-31 |
2014-07-01 |
Apple Inc. |
Data storage in analog memory cells across word lines using a non-integer number of bits per cell
|
US8856475B1
(en)
|
2010-08-01 |
2014-10-07 |
Apple Inc. |
Efficient selection of memory blocks for compaction
|
US8694854B1
(en)
|
2010-08-17 |
2014-04-08 |
Apple Inc. |
Read threshold setting based on soft readout statistics
|
US9021181B1
(en)
|
2010-09-27 |
2015-04-28 |
Apple Inc. |
Memory management for unifying memory cell conditions by using maximum time intervals
|
US9176671B1
(en)
|
2011-04-06 |
2015-11-03 |
P4tents1, LLC |
Fetching data between thread execution in a flash/DRAM/embedded DRAM-equipped system
|
US8930647B1
(en)
|
2011-04-06 |
2015-01-06 |
P4tents1, LLC |
Multiple class memory systems
|
US9170744B1
(en)
|
2011-04-06 |
2015-10-27 |
P4tents1, LLC |
Computer program product for controlling a flash/DRAM/embedded DRAM-equipped system
|
US9158546B1
(en)
|
2011-04-06 |
2015-10-13 |
P4tents1, LLC |
Computer program product for fetching from a first physical memory between an execution of a plurality of threads associated with a second physical memory
|
US9164679B2
(en)
|
2011-04-06 |
2015-10-20 |
Patents1, Llc |
System, method and computer program product for multi-thread operation involving first memory of a first memory class and second memory of a second memory class
|
JP5703967B2
(en)
*
|
2011-05-31 |
2015-04-22 |
株式会社リコー |
Memory system, memory control method, and memory control program
|
US9417754B2
(en)
|
2011-08-05 |
2016-08-16 |
P4tents1, LLC |
User interface system, method, and computer program product
|
CN102955497A
(en)
*
|
2011-08-18 |
2013-03-06 |
鸿富锦精密工业(深圳)有限公司 |
Mainboard provided with solid-state drive
|
US8762607B2
(en)
*
|
2012-06-29 |
2014-06-24 |
Intel Corporation |
Mechanism for facilitating dynamic multi-mode memory packages in memory systems
|
CN105706064B
(en)
|
2013-07-27 |
2019-08-27 |
奈特力斯股份有限公司 |
With the local memory modules synchronized respectively
|
US9977628B2
(en)
*
|
2014-04-16 |
2018-05-22 |
Sandisk Technologies Llc |
Storage module and method for configuring the storage module with memory operation parameters
|
US11556416B2
(en)
|
2021-05-05 |
2023-01-17 |
Apple Inc. |
Controlling memory readout reliability and throughput by adjusting distance between read thresholds
|
US11847342B2
(en)
|
2021-07-28 |
2023-12-19 |
Apple Inc. |
Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
|