WO2002037537A3 - Phase transition design to maintain constant line length through focus - Google Patents

Phase transition design to maintain constant line length through focus Download PDF

Info

Publication number
WO2002037537A3
WO2002037537A3 PCT/US2001/031442 US0131442W WO0237537A3 WO 2002037537 A3 WO2002037537 A3 WO 2002037537A3 US 0131442 W US0131442 W US 0131442W WO 0237537 A3 WO0237537 A3 WO 0237537A3
Authority
WO
WIPO (PCT)
Prior art keywords
phase
corner
phase transition
focus
line length
Prior art date
Application number
PCT/US2001/031442
Other languages
French (fr)
Other versions
WO2002037537A2 (en
Inventor
John L Nistler
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to AU2001296722A priority Critical patent/AU2001296722A1/en
Publication of WO2002037537A2 publication Critical patent/WO2002037537A2/en
Publication of WO2002037537A3 publication Critical patent/WO2002037537A3/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof

Abstract

Various embodiments of a phase shifting mask and a method of utilizing the same are provided. In one aspect, a mask (86) is provided that includes a substrate (90) and an opaque structure (92) thereon. The opaque structure (92) has an end (128) with a first corner (159c) and a second corner (159d). The first corner (159c) and the second corner (159d) are operable to produce diffraction intensity maximums. A first phase shifting region (115a) is provided that has a first phase. A second phase shifting region (122) is provided that has a second phase that is phase shifted relative to the first phase. The first and second phase shifting regions (155a, 122) are arranged to define a first phase transition (156) between the first corner (159c) and the second corner (159d). The first phase transition (156) is operable to produce a plurality of intensity nodes that are superpositioned with the diffraction intensity maximums.
PCT/US2001/031442 2000-11-02 2001-10-09 Phase transition design to maintain constant line length through focus WO2002037537A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001296722A AU2001296722A1 (en) 2000-11-02 2001-10-09 Phase transition design to maintain constant line length through focus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US70496400A 2000-11-02 2000-11-02
US09/704,964 2000-11-02

Publications (2)

Publication Number Publication Date
WO2002037537A2 WO2002037537A2 (en) 2002-05-10
WO2002037537A3 true WO2002037537A3 (en) 2003-03-13

Family

ID=24831559

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/031442 WO2002037537A2 (en) 2000-11-02 2001-10-09 Phase transition design to maintain constant line length through focus

Country Status (3)

Country Link
AU (1) AU2001296722A1 (en)
TW (1) TW519678B (en)
WO (1) WO2002037537A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8187772B2 (en) 2004-10-08 2012-05-29 Globalfoundries Inc. Solid immersion lens lithography

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0679948A2 (en) * 1994-04-28 1995-11-02 International Business Machines Corporation Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique
US5576126A (en) * 1994-09-26 1996-11-19 Micron Technology, Inc. Phase shifting mask
US6312855B1 (en) * 1999-11-22 2001-11-06 United Microelectronics Corp. Three-phase phase shift mask

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0679948A2 (en) * 1994-04-28 1995-11-02 International Business Machines Corporation Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique
US5576126A (en) * 1994-09-26 1996-11-19 Micron Technology, Inc. Phase shifting mask
US6312855B1 (en) * 1999-11-22 2001-11-06 United Microelectronics Corp. Three-phase phase shift mask

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MAURER W ET AL: "Proximity effects of alternating phase shift masks", 19TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY, MONTEREY, CA, USA, 15-17 SEPT. 1999, vol. 3873, pt.1-2, Proceedings of the SPIE - The International Society for Optical Engineering, 1999, SPIE-Int. Soc. Opt. Eng, USA, pages 344 - 349, XP001112999, ISSN: 0277-786X *

Also Published As

Publication number Publication date
TW519678B (en) 2003-02-01
WO2002037537A2 (en) 2002-05-10
AU2001296722A1 (en) 2002-05-15

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Legal Events

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