WO2002019374A3 - Methods and apparatus for adjusting beam parallelism in ion implanters - Google Patents

Methods and apparatus for adjusting beam parallelism in ion implanters Download PDF

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Publication number
WO2002019374A3
WO2002019374A3 PCT/US2001/022392 US0122392W WO0219374A3 WO 2002019374 A3 WO2002019374 A3 WO 2002019374A3 US 0122392 W US0122392 W US 0122392W WO 0219374 A3 WO0219374 A3 WO 0219374A3
Authority
WO
WIPO (PCT)
Prior art keywords
parallelism
methods
implant
ion beam
workpiece
Prior art date
Application number
PCT/US2001/022392
Other languages
French (fr)
Other versions
WO2002019374A2 (en
Inventor
Joseph C Olson
Anthony Renau
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24603771&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2002019374(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Priority to IL15456301A priority Critical patent/IL154563A0/en
Priority to JP2002524182A priority patent/JP4334865B2/en
Priority to EP01954716A priority patent/EP1314179A2/en
Priority to KR1020037002940A priority patent/KR100681968B1/en
Publication of WO2002019374A2 publication Critical patent/WO2002019374A2/en
Publication of WO2002019374A3 publication Critical patent/WO2002019374A3/en
Priority to IL154563A priority patent/IL154563A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

Methods and apparatus for implanting ions in a workpiece, such as a semiconductor wafer, include generating an ion beam, measuring parallelism of the ion beam, adjusting the ion beam for a desired parallelism based on the measured parallelism, measuring a beam direction of the adjusted ion beam, orienting a workpiece at an implant angle referenced to the measured beam direction and performing an implant with the workpiece oriented at the implant angle referenced to the measured beam direction. The implant may be performed with a high degree of beam parallelism.
PCT/US2001/022392 2000-08-28 2001-07-13 Methods and apparatus for adjusting beam parallelism in ion implanters WO2002019374A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IL15456301A IL154563A0 (en) 2000-08-28 2001-07-13 Methods and apparatus for adjusting beam parallelism in ion implanters
JP2002524182A JP4334865B2 (en) 2000-08-28 2001-07-13 Method and apparatus for adjusting beam parallelism of an ion implanter
EP01954716A EP1314179A2 (en) 2000-08-28 2001-07-13 Methods and apparatus for adjusting beam parallelism in ion implanters
KR1020037002940A KR100681968B1 (en) 2000-08-28 2001-07-13 Methods and apparatus for adjusting beam parallelism in ion implanters
IL154563A IL154563A (en) 2000-08-28 2003-02-20 Methods and apparatus for adjusting beam parallelism in ion implanters

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/649,183 US6437350B1 (en) 2000-08-28 2000-08-28 Methods and apparatus for adjusting beam parallelism in ion implanters
US09/649,183 2000-08-28

Publications (2)

Publication Number Publication Date
WO2002019374A2 WO2002019374A2 (en) 2002-03-07
WO2002019374A3 true WO2002019374A3 (en) 2002-06-06

Family

ID=24603771

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/022392 WO2002019374A2 (en) 2000-08-28 2001-07-13 Methods and apparatus for adjusting beam parallelism in ion implanters

Country Status (7)

Country Link
US (2) US6437350B1 (en)
EP (1) EP1314179A2 (en)
JP (2) JP4334865B2 (en)
KR (1) KR100681968B1 (en)
IL (2) IL154563A0 (en)
TW (1) TWI295809B (en)
WO (1) WO2002019374A2 (en)

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JP2000183139A (en) * 1998-12-17 2000-06-30 Hitachi Ltd Ion implanter
US6791094B1 (en) * 1999-06-24 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for determining beam parallelism and direction
US6573518B1 (en) * 2000-10-30 2003-06-03 Varian Semiconductor Equipment Associates, Inc. Bi mode ion implantation with non-parallel ion beams
US6690022B2 (en) * 2001-01-17 2004-02-10 Varian Semiconductor Equipment Associates, Inc. Ion beam incidence angle and beam divergence monitor
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
KR100478485B1 (en) * 2002-10-02 2005-03-28 동부아남반도체 주식회사 Method for adjusting ion injection angle in semiconductor device
US6828572B2 (en) * 2003-04-01 2004-12-07 Axcelis Technologies, Inc. Ion beam incident angle detector for ion implant systems
US6677598B1 (en) * 2003-04-29 2004-01-13 Axcelis Technologies, Inc. Beam uniformity and angular distribution measurement system
JP2005064033A (en) * 2003-08-12 2005-03-10 Fujio Masuoka Method of implanting ion into semiconductor substrate
JP2005353537A (en) * 2004-06-14 2005-12-22 Ulvac Japan Ltd Ion implanter
US7232744B2 (en) * 2004-10-01 2007-06-19 Texas Instruments Incorporated Method for implanting dopants within a substrate by tilting the substrate relative to the implant source
US7442944B2 (en) 2004-10-07 2008-10-28 Varian Semiconductor Equipment Associates, Inc. Ion beam implant current, spot width and position tuning
JP4452848B2 (en) * 2004-12-13 2010-04-21 独立行政法人放射線医学総合研究所 Charged particle beam irradiation apparatus and rotating gantry
KR100600356B1 (en) * 2004-12-29 2006-07-18 동부일렉트로닉스 주식회사 Method for Confirming Angle Zero Position in Implant Machine
US20060145095A1 (en) * 2004-12-30 2006-07-06 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion implantation with control of incidence angle by beam deflection
JP4093235B2 (en) 2005-01-17 2008-06-04 日新イオン機器株式会社 Angle measuring apparatus and related apparatus for ion implantation apparatus
US7394078B2 (en) * 2005-03-16 2008-07-01 Varian Semiconductor Equipment Associates, Inc. Technique for ion beam angle spread control for advanced applications
US7348576B2 (en) * 2005-03-16 2008-03-25 Varian Semiconductor Equipment Associates, Inc. Technique for ion beam angle process control
US7868305B2 (en) * 2005-03-16 2011-01-11 Varian Semiconductor Equipment Associates, Inc. Technique for ion beam angle spread control
KR100673009B1 (en) * 2005-08-01 2007-01-24 삼성전자주식회사 Apparatus for measuring center of beam profiler, ion implanter and method using the same
KR100668217B1 (en) * 2005-08-11 2007-01-11 동부일렉트로닉스 주식회사 Method of dose correlation in tilt ion implantation
US7329882B2 (en) * 2005-11-29 2008-02-12 Axcelis Technologies, Inc. Ion implantation beam angle calibration
US7361914B2 (en) * 2005-11-30 2008-04-22 Axcelis Technologies, Inc. Means to establish orientation of ion beam to wafer and correct angle errors
US20080073553A1 (en) * 2006-02-13 2008-03-27 Ibis Technology Corporation Ion beam profiler
US7391038B2 (en) * 2006-03-21 2008-06-24 Varian Semiconductor Equipment Associates, Inc. Technique for isocentric ion beam scanning
US7397049B2 (en) * 2006-03-22 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Determining ion beam parallelism using refraction method
CN100378915C (en) * 2006-04-07 2008-04-02 北京中科信电子装备有限公司 Method for measuring parallel beam injection angle
JP5560036B2 (en) * 2006-06-12 2014-07-23 アクセリス テクノロジーズ， インコーポレイテッド Beam angle adjustment in ion implanter
US7227160B1 (en) * 2006-09-13 2007-06-05 Axcelis Technologies, Inc. Systems and methods for beam angle adjustment in ion implanters
US7812325B2 (en) * 2006-09-28 2010-10-12 Varian Semiconductor Equipment Associates, Inc. Implanting with improved uniformity and angle control on tilted wafers
US7507978B2 (en) * 2006-09-29 2009-03-24 Axcelis Technologies, Inc. Beam line architecture for ion implanter
CN101414545B (en) * 2007-10-17 2010-10-13 北京中科信电子装备有限公司 Faraday apparatus for angle measurement of parallel beam
US7820985B2 (en) * 2007-12-28 2010-10-26 Varian Semiconductor Equipment Associates, Inc. High tilt implant angle performance using in-axis tilt
US7994488B2 (en) * 2008-04-24 2011-08-09 Axcelis Technologies, Inc. Low contamination, low energy beamline architecture for high current ion implantation
US7897944B2 (en) * 2008-07-21 2011-03-01 Axcelis Technologies, Inc. Method and apparatus for measurement of beam angle in ion implantation
US7973290B2 (en) * 2008-08-13 2011-07-05 Axcelis Technologies, Inc. System and method of beam energy identification for single wafer ion implantation
US8164070B2 (en) * 2008-12-05 2012-04-24 Nissin Ion Equipment Co., Ltd. Collimator magnet for ion implantation system
JP5041260B2 (en) 2010-06-04 2012-10-03 日新イオン機器株式会社 Ion implanter
TWI686838B (en) 2014-12-26 2020-03-01 美商艾克塞利斯科技公司 System and method to improve productivity of hybrid scan ion beam implanters
CN107221485B (en) * 2017-06-02 2019-02-05 东莞帕萨电子装备有限公司 A kind of ion beam current regulating device
US11195720B2 (en) * 2018-10-29 2021-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method for ion implantation that adjusts a target's tilt angle based on a distribution of ejected ions from a target
CN111769026B (en) * 2019-04-02 2024-03-12 北京中科信电子装备有限公司 Beam property measuring device and method

Citations (9)

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US4021675A (en) * 1973-02-20 1977-05-03 Hughes Aircraft Company System for controlling ion implantation dosage in electronic materials
US4922106A (en) * 1986-04-09 1990-05-01 Varian Associates, Inc. Ion beam scanning method and apparatus
US5126575A (en) * 1990-04-17 1992-06-30 Applied Materials, Inc. Method and apparatus for broad beam ion implantation
US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
EP0975004A2 (en) * 1998-07-22 2000-01-26 Nissin Electric Co., Ltd. Method for measuring distribution of beams of charged particles and methods relating thereto
WO2001004926A1 (en) * 1999-07-08 2001-01-18 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for alignment of ion beam systems using beam current sensors
WO2001027968A1 (en) * 1999-10-13 2001-04-19 Applied Materials, Inc. Determining beam alignment in ion implantation using rutherford back scattering
US6255662B1 (en) * 1998-10-27 2001-07-03 Axcelis Technologies, Inc. Rutherford backscattering detection for use in Ion implantation

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JPH025346A (en) * 1988-06-15 1990-01-10 Teru Barian Kk Ion implanter and adjustment of ion beam
JP2765043B2 (en) * 1989-04-28 1998-06-11 日新電機株式会社 Ion beam parallelism measurement method
JPH0317949A (en) 1989-06-14 1991-01-25 Ulvac Corp Beam parallelism measuring device for use in ion implanting device
JP2969788B2 (en) * 1990-05-17 1999-11-02 日新電機株式会社 Ion beam parallelism measurement method, scanning waveform shaping method, and ion implantation apparatus
JPH0525629A (en) * 1991-07-18 1993-02-02 Tel Varian Ltd Ion implantation device
JPH0613013A (en) 1992-06-29 1994-01-21 Sumitomo Electric Ind Ltd Device for working with focused ion beam
JPH0714547U (en) * 1993-08-16 1995-03-10 日新電機株式会社 Ion implanter
US5757018A (en) 1995-12-11 1998-05-26 Varian Associates, Inc. Zero deflection magnetically-suppressed Faraday for ion implanters
US5641969A (en) 1996-03-28 1997-06-24 Applied Materials, Inc. Ion implantation apparatus
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
JP3449198B2 (en) 1997-10-22 2003-09-22 日新電機株式会社 Ion implanter
US6791094B1 (en) 1999-06-24 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for determining beam parallelism and direction
GB2355336B (en) 1999-10-12 2004-04-14 Applied Materials Inc Ion implanter with wafer angle and faraday alignment checking
US6573518B1 (en) 2000-10-30 2003-06-03 Varian Semiconductor Equipment Associates, Inc. Bi mode ion implantation with non-parallel ion beams

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021675A (en) * 1973-02-20 1977-05-03 Hughes Aircraft Company System for controlling ion implantation dosage in electronic materials
US4922106A (en) * 1986-04-09 1990-05-01 Varian Associates, Inc. Ion beam scanning method and apparatus
US5126575A (en) * 1990-04-17 1992-06-30 Applied Materials, Inc. Method and apparatus for broad beam ion implantation
US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
EP0975004A2 (en) * 1998-07-22 2000-01-26 Nissin Electric Co., Ltd. Method for measuring distribution of beams of charged particles and methods relating thereto
US6255662B1 (en) * 1998-10-27 2001-07-03 Axcelis Technologies, Inc. Rutherford backscattering detection for use in Ion implantation
WO2001004926A1 (en) * 1999-07-08 2001-01-18 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for alignment of ion beam systems using beam current sensors
WO2001027968A1 (en) * 1999-10-13 2001-04-19 Applied Materials, Inc. Determining beam alignment in ion implantation using rutherford back scattering

Also Published As

Publication number Publication date
KR100681968B1 (en) 2007-02-15
USRE40009E1 (en) 2008-01-22
TWI295809B (en) 2008-04-11
EP1314179A2 (en) 2003-05-28
IL154563A0 (en) 2003-09-17
KR20030029877A (en) 2003-04-16
JP2009200050A (en) 2009-09-03
WO2002019374A2 (en) 2002-03-07
IL154563A (en) 2009-08-03
JP2004511880A (en) 2004-04-15
JP4334865B2 (en) 2009-09-30
US6437350B1 (en) 2002-08-20

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