WO2002011173B1 - Luminescence conversion based light emitting diode and phosphors for wavelength conversion - Google Patents

Luminescence conversion based light emitting diode and phosphors for wavelength conversion

Info

Publication number
WO2002011173B1
WO2002011173B1 PCT/US2001/023665 US0123665W WO0211173B1 WO 2002011173 B1 WO2002011173 B1 WO 2002011173B1 US 0123665 W US0123665 W US 0123665W WO 0211173 B1 WO0211173 B1 WO 0211173B1
Authority
WO
WIPO (PCT)
Prior art keywords
phosphor
light
phosphors
accordance
type
Prior art date
Application number
PCT/US2001/023665
Other languages
French (fr)
Other versions
WO2002011173A1 (en
Inventor
Earl Danielson
Andries Ellens
Frank Jermann
Wolfgang Rossner
Martin Devenney
Daniel Giaquinta
Manfred Kobusch
Original Assignee
Osram Opto Semiconductors Gmbh
Symyx Technologies Inc
Earl Danielson
Andries Ellens
Frank Jermann
Wolfgang Rossner
Martin Devenney
Daniel Giaquinta
Manfred Kobusch
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Symyx Technologies Inc, Earl Danielson, Andries Ellens, Frank Jermann, Wolfgang Rossner, Martin Devenney, Daniel Giaquinta, Manfred Kobusch filed Critical Osram Opto Semiconductors Gmbh
Priority to EP01959261A priority Critical patent/EP1328959A1/en
Priority to JP2002516806A priority patent/JP2004505172A/en
Priority to US10/333,725 priority patent/US6850002B2/en
Publication of WO2002011173A1 publication Critical patent/WO2002011173A1/en
Publication of WO2002011173B1 publication Critical patent/WO2002011173B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7729—Chalcogenides
    • C09K11/773—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7729—Chalcogenides
    • C09K11/7731—Chalcogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7784—Chalcogenides
    • C09K11/7786—Chalcogenides with alkaline earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

A device for the generation of specific colored light including white light by luminescent down conversion and additive color mixing based on a light-emitting diode 'LED'(1) comprising a semiconductor light-emitting layer emitting near UV light about 370-420 nm or blue light about 420-480 nm and phosphors (6) which absorb completely or partly the light emitted by the light-emitting component and emit light of wavelengths longer than that of the absorbed primary light, wherein the light emitting layer of the light emitting component is preferably a Ga(In)N-based semiconductor; and at least one of the phosphors (6) contains a metal sulfide fluorescent material activated with europium containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg and Zn; and/or at least another phosphor (6) which contains a complex thiometalate fluorescent material activated with either europium, cerium or both europium and cerium containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg and Zn; and at least one element selected from the group consisting of Al, Ga, In, Y, La and Gd.

Claims

AMENDED CLAIMS
[received by the International Bureau on 18 January 2001 (18.01.02); Claims 16 - 23, replaced by new claims 16 - 23; claims 1-15 and 24-29, unchanged
(1 page)]
16. A phosphor which absorbs radiation having a first spectrum and emits radiation having a second spectrum, the phosphor comprising: a photoluminescent metal sαlfide MS (Type I phosphor) of the formula (Srι_x.y Mx Euy )S with M is at least one of Ba, Mg, Zn
5 alone or in combination with Ca and 0< x < 0.5 and 0< y ≤Q.10, or a photoluminescent phosphor comprising a complex metal thio etallate photoluminescent material M*N*2S4 (type II phosphor) comprising of at least one element selected from the group M* = Mg, Zn, alone or in combination with at least one of Ba, 10 Sr, Ca, and at least one element selected from the group N* = Al,
Ga, alone or in combination with In, Y, La, Gd, N* being activated with at least one of europium (Eu) and cerium (Ce).
17. A phosphor composition comprising at least one ofthe phosphors of type I and one of the phosphors of type TI in accordance with claim
15 16.
18. A phosphor in accordance with claim 16 wherein M is one of Ba, Mg or Zn.
19. A phosphor in accordance with claim 16 wherein the phosphor is the type I according IO (Srι.x.y Mx Euy )S with M is at least one of
20 Ba, Mg, Zn alone or in combination with Ca and 0< x < 0.5 and 0< y ≤O.10.
20. A phosphor in accordance with claim 19 wherein the phosphor is according to (Srι_x.yBaxEuy)S with x < 0.25.
21. A phosphor in accordance with claim 1 wherein the phosphor is 25 according to (Sn -x.z-yCaxBa2Euy)S with x + y + z ≤ 0.35.
22. A phosphor in accordance with claim 16, wherein the phosphor composition is according to M*N*2S4:Eu,Ce (type II phosphor) with M* is at least one of * ~ Mg, Zn alone or together with at least one of Ba, Sr, Ca, and N* is at least one of N* = Al, Ga, alone or
30 together with small proportions (below 20%) of In, Y, La, Gd.
23. A phosphor in accordance with claim 16, wherein the phosphor is of type II phosphor containing Mg as one ofthe host lattice elements
21
PCT/US2001/023665 2000-07-28 2001-07-27 Luminescence conversion based light emitting diode and phosphors for wavelength conversion WO2002011173A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP01959261A EP1328959A1 (en) 2000-07-28 2001-07-27 Luminescence conversion based light emitting diode and phosphors for wavelength conversion
JP2002516806A JP2004505172A (en) 2000-07-28 2001-07-27 Luminescence conversion based light emitting diodes and phosphors for wavelength conversion
US10/333,725 US6850002B2 (en) 2000-07-28 2001-07-27 Light emitting device for generating specific colored light, including white light

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22141400P 2000-07-28 2000-07-28
US60/221,414 2000-07-28

Publications (2)

Publication Number Publication Date
WO2002011173A1 WO2002011173A1 (en) 2002-02-07
WO2002011173B1 true WO2002011173B1 (en) 2002-03-28

Family

ID=22827718

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/023665 WO2002011173A1 (en) 2000-07-28 2001-07-27 Luminescence conversion based light emitting diode and phosphors for wavelength conversion

Country Status (4)

Country Link
US (1) US6850002B2 (en)
EP (1) EP1328959A1 (en)
JP (1) JP2004505172A (en)
WO (1) WO2002011173A1 (en)

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