WO2002006866A3 - Slab-coupled optical waveguide laser and amplifier - Google Patents
Slab-coupled optical waveguide laser and amplifier Download PDFInfo
- Publication number
- WO2002006866A3 WO2002006866A3 PCT/US2001/021750 US0121750W WO0206866A3 WO 2002006866 A3 WO2002006866 A3 WO 2002006866A3 US 0121750 W US0121750 W US 0121750W WO 0206866 A3 WO0206866 A3 WO 0206866A3
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- WIPO (PCT)
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- order
- lowest
- mode
- slab
- amplifier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/204—Strongly index guided structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
Abstract
A laser and optical amplifier waveguide device with a plurality of layers that supports a single lowest-order optical mode with gain while higher order nodes radiate and have a net loss. The supported lowest-order mode which has gain, has a mode cross section which is large compared to the operating optical wavelength in both the transverse and lateral directions. The contours of constant optical intensity of such lowest-order can be nearly circular, having an approximately elliptical shape with a small aspect ratio.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21818700P | 2000-07-14 | 2000-07-14 | |
US60/218,187 | 2000-07-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002006866A2 WO2002006866A2 (en) | 2002-01-24 |
WO2002006866A3 true WO2002006866A3 (en) | 2003-07-10 |
Family
ID=22814088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/021750 WO2002006866A2 (en) | 2000-07-14 | 2001-07-11 | Slab-coupled optical waveguide laser and amplifier |
Country Status (2)
Country | Link |
---|---|
US (1) | US6928223B2 (en) |
WO (1) | WO2002006866A2 (en) |
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JP4719331B2 (en) * | 2000-03-10 | 2011-07-06 | 富士通株式会社 | Wavelength multiplexed optical signal processing device |
US6987911B2 (en) * | 2000-03-16 | 2006-01-17 | Lightsmyth Technologies, Inc. | Multimode planar waveguide spectral filter |
US7773842B2 (en) * | 2001-08-27 | 2010-08-10 | Greiner Christoph M | Amplitude and phase control in distributed optical structures |
USRE41570E1 (en) | 2000-03-16 | 2010-08-24 | Greiner Christoph M | Distributed optical structures in a planar waveguide coupling in-plane and out-of-plane optical signals |
US7519248B2 (en) | 2000-03-16 | 2009-04-14 | Lightsmyth Technologies Inc | Transmission gratings designed by computed interference between simulated optical signals and fabricated by reduction lithography |
US7194164B2 (en) | 2000-03-16 | 2007-03-20 | Lightsmyth Technologies Inc | Distributed optical structures with improved diffraction efficiency and/or improved optical coupling |
USRE42407E1 (en) | 2000-03-16 | 2011-05-31 | Steyphi Services De Llc | Distributed optical structures with improved diffraction efficiency and/or improved optical coupling |
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US6845116B2 (en) * | 2002-10-24 | 2005-01-18 | Wisconsin Alumni Research Foundation | Narrow lateral waveguide laser |
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CN113937620B (en) * | 2021-09-02 | 2023-02-10 | 华中科技大学 | High-power single transverse mode semiconductor laser and control method thereof |
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US3899235A (en) * | 1974-03-11 | 1975-08-12 | Bell Telephone Labor Inc | Slab-coupled optical waveguide |
US4791646A (en) * | 1985-07-31 | 1988-12-13 | California Institute Of Technology | Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very narrow single lobed farfield patterns |
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JPH067618B2 (en) * | 1983-12-26 | 1994-01-26 | 株式会社東芝 | Semiconductor laser device |
US4799228A (en) * | 1985-08-23 | 1989-01-17 | Kabushiki Kaisha Toshiba | Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide |
GB8522704D0 (en) * | 1985-09-13 | 1985-10-16 | British Telecomm | Optical waveguide devices |
US4787086A (en) * | 1986-05-19 | 1988-11-22 | American Telephone And Telegraph Company, At&T Bell Laboratories | High-power, fundamental transverse mode laser |
US5272711A (en) * | 1992-05-12 | 1993-12-21 | Trw Inc. | High-power semiconductor laser diode |
US5606570A (en) * | 1995-05-08 | 1997-02-25 | Wisconsin Alumni Research Foundation | High power antiguided semiconductor laser with interelement loss |
US5818860A (en) * | 1996-11-27 | 1998-10-06 | David Sarnoff Research Center, Inc. | High power semiconductor laser diode |
US6167073A (en) * | 1998-07-23 | 2000-12-26 | Wisconsin Alumni Research Foundation | High power laterally antiguided semiconductor light source with reduced transverse optical confinement |
-
2001
- 2001-07-11 US US09/903,099 patent/US6928223B2/en not_active Expired - Lifetime
- 2001-07-11 WO PCT/US2001/021750 patent/WO2002006866A2/en active Application Filing
Patent Citations (2)
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US3899235A (en) * | 1974-03-11 | 1975-08-12 | Bell Telephone Labor Inc | Slab-coupled optical waveguide |
US4791646A (en) * | 1985-07-31 | 1988-12-13 | California Institute Of Technology | Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very narrow single lobed farfield patterns |
Non-Patent Citations (1)
Title |
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MASAKI OKAJIMA ET AL: "A REAL-INDEX GUIDED INGAALP VISIBLE LASER DIODE WITH A SMALL BEAM ASTIGMATISM", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE INC. NEW YORK, US, vol. 27, no. 6, 1 June 1991 (1991-06-01), pages 1491 - 1495, XP000229846, ISSN: 0018-9197 * |
Also Published As
Publication number | Publication date |
---|---|
WO2002006866A2 (en) | 2002-01-24 |
US6928223B2 (en) | 2005-08-09 |
US20020051615A1 (en) | 2002-05-02 |
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