WO2001082343A2 - Heat management in wafer processing equipment using thermoelectric device - Google Patents
Heat management in wafer processing equipment using thermoelectric device Download PDFInfo
- Publication number
- WO2001082343A2 WO2001082343A2 PCT/US2001/012832 US0112832W WO0182343A2 WO 2001082343 A2 WO2001082343 A2 WO 2001082343A2 US 0112832 W US0112832 W US 0112832W WO 0182343 A2 WO0182343 A2 WO 0182343A2
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- WIPO (PCT)
- Prior art keywords
- current
- thermoelectric module
- thermoelectric
- chamber
- processing system
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Definitions
- the present invention generally relates to semiconductor manufacturing equipment and more particularly to the application of a thermoelectric device to a semiconductor processing system.
- Semiconductor manufacturing equipment is used to process semiconductor wafers into electronic devices. .
- the wafers are loaded into the processing system using a wafer carrier.
- a transfer mechanism individually removes the wafers from the carrier and transfers the individual wafers through valves, and into various processing chambers.
- the transfer mechanism may also move individual wafers between processing chambers to effect different processing steps.
- the wafers are heated.
- one final processing step may include a wafer-cooling step. To effect the wafer-cooling step, the wafers are placed into a cooling chamber until the temperature of the wafers is low enough so that the wafer can be replaced into the carrier.
- the processing chambers have different requirements for heating and/or cooling of various components or structures, including the wafers. Because of the variable requirements, process chambers are continuously heated up and/or cooled down during a processing cycle, which can result in a substantial amount of energy being wasted.
- the present invention applies the well-known principles of operation of thermoelectric devices to a semiconductor processing system to provide a convenient power supply, to reduce the need for cooling water, and to lower energy consumption.
- the present invention provides a semiconductor processing system and method, which uses heat energy typically lost or wasted in most common semiconductor processing systems.
- the present invention includes a heat management system, which uses heat, waste heat, and/or excess heat generated by a thermal processing chamber or other heat source, to produce power from a first thermoelectric device (power generator).
- the power is produced by maintaining a temperature difference across a hot side and the cool side of an assembly of semiconductor thermoelectric elements.
- power from the first thermoelectric device can be delivered to a second thermoelectric device (cooler).
- the second thermoelectric device driven by the power from the first thermoelectric device, can be used to remove heat from a cooling chamber.
- energy is absorbed by electrons as they pass from a low energy level element to a higher energy level element.
- the power supplied by the first thermoelectric device supplies the energy to move the electrons through the system.
- energy is expelled to a heat sink as electrons move from a high energy level element to a low energy level element.
- a semiconductor wafer processing system in one aspect, includes a first processing chamber and a second processing chamber.
- the first processing chamber includes a first thermoelectric module operative for generating a current.
- the second processing chamber includes a second thermoelectric module, which receives the current and is operative for reducing the temperature of the second processing chamber.
- a semiconductor wafer processing system which includes a first chamber providing a first source of thermal energy and a second chamber having a first temperature. Also included in the system is a first thermoelectric module being operative for generating a first current in response to receiving the thermal energy, and a second thermoelectric module being configured to receive the first current and being operative for changing the first temperature to a second temperature.
- a method for processing a semiconductor wafer which includes generating a current with a first thermoelectric module using a heat source; and removing heat from a processing chamber using a second thermoelectric module which is made operative by the current generated by the first thermoelectric module.
- thermoelectric devices in the heat management system of the present invention are the absence of moving parts, silent operation, and lack of pressure vessels. Since the present invention uses fewer components then conventional heat management systems, the system of the present invention may be made more reliable and more compact, reducing the cost per unit and requiring less floor space.
- FIG. 1 is a simplified illustration of a typical thermoelectric couple device
- FIG. 2 is a simplified illustration a semiconductor wafer processing system including the heat management system of the present invention
- FIG. 3 is a simplified diagram of the heat management system of the present invention.
- FIGS. 4 and 4 A are simplified illustrations of an alternative embodiment of the present invention.
- thermoelectric generation usually involves using typical thermoelectric couples 5, like the example illustrated in FIG. 1.
- the performance of thermoelectric couples 5 is based on well known thermoelectric generation principles, commonly known as the Seebeck effect and the Peltier effect.
- the Seebeck effect involves producing a current in a closed circuit of two dissimilar materials 6, forming two junctions, where one junction is held at a higher temperature (hot junction) 7 than the other junction (cold junction) 9.
- the Peltier effect is the inverse of the Seebeck effect.
- the Peltier effect involves the heating or cooling of the thermojunctions by passing a current through the junctions.
- thermoelectric couples are combined in a module (FIG. 3), where the couples are coupled electrically in series and thermally in parallel. In combining the couples into modules, a greater variety of sizes, shapes, operating currents, operating voltages, and ranges of heat pumping capacity becomes available.
- FIG. 2 is a simplified illustration of a semiconductor wafer processing system 10, which can accommodate the heat management system of the present invention.
- wafer processing system 10 includes a loading station 12, a loadlock 26, a transfer chamber 14, a transfer mechanism 16, at least one or more processing chambers 18 and 20, and a cooling chamber 22.
- Loading station 12 has platforms for supporting and moving wafer carriers, such as wafer carrier 24, into loadlock 26.
- Carrier 24 is a removable wafer carrier, which can carry up to 25 wafers 28 at a time. Other types of wafer carriers, including fixed wafer carriers, can also be used. Wafer carriers are loaded onto platforms either manually or by using automated guided vehicles ("AGV").
- AGV automated guided vehicles
- processing chambers 18 and 20 may be rapid thermal processing ("RTP") reactors.
- RTP rapid thermal processing
- the invention is not limited for use with a specific type of reactor and may use any semiconductor processing reactor, such as those used in physical vapor deposition, etching, chemical vapor deposition, and ashing.
- Reactors 18 and 20 may also be of the type disclosed in commonly assigned U.S. Patent Application No. 09/451,494, entitled “Resistively Heated Single Wafer Furnace,” which is incorporated herein by reference for all purposes.
- each wafer 28 from wafer carrier 24 is transported from loadlock 26, through transfer chamber 14, and into process chamber 18 or 20.
- wafer transport mechanism 16 is capable of lifting wafer 28 from wafer carrier 24 and, through a combination of linear and rotational translations, transporting wafer 28 through vacuum chamber valves (also known as gates) and depositing the wafer at the appropriate position within wafer processing chamber 18 or 20.
- wafer transport mechanism 16 is capable of transporting wafer 28 from one processing chamber 18 or 20 to another and from a processing chamber back to cooling chamber 22.
- a pump 32 is provided for use in processes requiring vacuum.
- a single pump 32 may be used to pump down the entire volume of system 10 to vacuum. Otherwise, additional pumps may be required to separately pump down reactors 18 and 20.
- transfer mechanism 16 can move wafer 28 into cooling chamber 22. Because newly processed wafers may have temperatures of 200° C or higher and may melt or damage a typical wafer carrier, cooling chamber 22 is provided for cooling the wafers before placing them back into wafer carrier 24.
- wafer 28 is picked-up from cooling chamber 22 and replaced in its original slot in carrier 24 using transfer mechanism 16.
- carrier 24 is lowered from loadlock 26 and rotated out of position (see arrow 34 which shows one direction of rotation) to allow another platform to move a next wafer carrier into loadlock 26.
- Heat management system 40 includes at least one heat source thermally coupled to at least one first thermoelectric module 42.
- System 40 also includes a body to be cooled coupled to at least one second thermoelectric module 44.
- additional heat sources and additional bodies to be cooled may each be thermally coupled to additional thermoelectric modules and remain within the scope of the present invention.
- the heat source for the thermoelectric generation may be any heat source, including any generated, excess, wasted, and/or recyclable heat source, which is typically found in a semiconductor manufacturing plant.
- the heat source may include at least one processing chamber.
- the heat source can be two or more processing chambers, such as processing chambers 18 and 20, previously described with reference to FIG. 2.
- processing chambers 18 and 20 are heat sources which can be made to intimately contact thermoelectric modules 42 and 42A, respectively.
- thermoelectric modules 42 and 42A are disposed remotely from processing chambers 18 and 20 and receive heat from a different source.
- first thermoelectric modules 42 and 42A are thermoelectric generators, which produce power, specifically a DC current, through the direct conversion of heat into electricity (Seebeck Effect).
- first thermoelectric module 42 includes energy conversion materials 46 and a heat sink 48.
- Additional thermoelectric module 42 A also includes energy conversion materials 46 A and a heat sink 48 A.
- a steady power level may be maintained by maintaining a temperature difference across the hot junction and the cold junction of energy conversion materials 46 and 46A.
- Energy conversion materials 46 and 46A are primarily composed of a number of p- and n-type pairs or couples (FIG. 1). The couples are connected electrically in series and may be sandwiched between electrical insulator/thermal conductor plates 50 and 52.
- Typical Z values for the most commonly used energy conversion materials are in the range of between about 0.5 x 10 "3 °C "I and 3 x 10 "3 °C "1 . In some materials, the voltage drop, which occurs between the hot and cold junctions, results from the flow of negatively charged electrons (n-type, hot junction positive).
- thermoelectric devices used for generating electricity use energy conversion materials which are compounds and alloys of lead, selenium, tellerium, antimony, bismuth, germanium, tin, manganese, cobalt, and " silicon.
- one compound may be PbSnTe or Bismuth Telluride.
- dopants such as boron, phosphorus, sodium, and iodine.
- the dopants create an excess of electrons (n- type) or a deficiency of electrons (p-type).
- plate 50 of thermoelectric modules 42 and 42 A contacts an external surface of process chambers 18 and 20, respectively.
- Plate 50 can provide electrical insulation between the process chambers and the energy conversion materials but is a good heat conductor.
- Plate 50 will typically made of a ceramic material.
- the external surface of process chambers 18 and 20 may range in temperatures up to about 250 °C.
- Heat sinks 48 and 48A are thermally coupled to conversion materials 46 and 46A, through ceramic plate 52.
- the operation of heat sinks is well known.
- Heat sinks 48 and 48 A represent the cool side of thermoelectric modules 42 and 42A.
- the cool side must have a temperature less than the temperature of the hot side.
- the difference in temperature Dt is between about 5 °C and 100 °C; preferably the difference in temperature Dt ranges from between 5 °C and 50 °C.
- Heat sinks 48 and 48A may include any typical heat sink material, such as brass or stainless steel; preferably aluminum.
- the configuration of heat sinks 48 and 48 A may be any conventional configuration, such as fin heat sink, liquid heat exchanger, cold plates, and the like.
- thermoelectric module As heat is made to move between the hot junction (heat source) and the cold junction (heat sink), a DC voltage is generated.
- conversion materials 46 and 46A can each generate a direct current voltage between about 1 volt and 150 volts and are also capable of generating a current of between about 0.1 amp and about 100 amps. If necessary, more than one thermoelectric module may be coupled together in series to generate larger voltages per unit.
- thermoelectric module 44 includes components similar in form and function to thermoelectric modules 42 and 42A described above.
- energy conversion materials 54 and heat sink 56 are similar in form, function, and operation to the energy conversion materials and heat sinks described above.
- module 44 is electrically coupled to thermoelectric modules 42 and 42A, such that the power produced in modules 42 and 42A can be used by module 44.
- module 44 Inputting the power into module 44, causes module 44 to act as a thermoelectric cooler.
- Thermoelectric cooling uses the Peltier effect, where upon an electric current is imposed across two junctions of a closed circuit of two dissimilar materials to cause heat to be moved or pumped from one junction to the other junction.
- energy conversion materials 56 are primarily composed of a number of p- and n-type pairs or couples (FIG. 1). The couples are connected electrically in series and may be sandwiched between electrical Plates 50 and 52 which are electrical insulators and thermal conductors.
- thermoelectric module 44 is made to intimately contact an external surface of a body to be cooled.
- the body to be cooled includes cooling chamber 22, previously described.
- the contents of cooling chamber 22, which are the processed wafers; may be in excess of 200 °C.
- the temperature of the wafers should be lowered in temperature to less than about 100 °C, so that the wafers can be returned to their carrier.
- heat sink 56 is also thermally coupled to conversion materials 54, through plate 52. Heat is moved or pumped from cooling chamber 22, across conversion materials 54, to heat sink 56. In operation at the cold juction, energy (heat) is absorbed from Chamber 22 by electrons as they pass from a low energy level in the p-type elements to a higher energy level in the n-type elements. Power from first thermoelectric modules 42 and 42A provide the energy to move electrons through each module at the hot junction, energy is expelled to heat sink 56 as in the n-type elements, electrons move from a higher energy level to a lower energy level in the p-type elements.
- a difference in temperature DT between the hot side and the cool side may be between about 5 °C and 100 °C; preferably, the difference in temperature Dt ranges from between 5 °C and 50 °C.
- Heat sink 56 may include any suitable heat sink material, such as brass, stainless steel; preferably aluminum.
- the configuration of heat sink 56 may be any conventional configuration, such as fin heat sink, liquid heat exchanger, cold plates, and the like.
- conversion materials 54 may use a direct current voltage between about 1 and 150 volts. If necessary, more than one module 44 may be coupled together in series, for example with module 44A (FIG. 2), to remove more heat from cooling chamber 22.
- each thermoelectric device may be independently driven from an external power source.
- FIGS. 4 and 4 A are simplified illustrations of an alternative embodiment of the present invention.
- process chambers 18 and 20 may each have at least one thermoelectric device 60 and 62 disposed between chambers 18 and 20 and transfer chamber 14.
- transfer chamber 14 provides a relatively large heat sink for thermoelectric devices 60 and 62 to operate.
- a plurality of thermoelectric devices 60, 62, 64, 66, 68, 70, 72, and 74 may be disposed between transfer chamber 14 and process chambers 18 and 20.
- the thermoelectric devices can be placed around access port 80, such that the devices are in intimate contact with the mating portions of chambers 18 and 20 and transfer chamber 14.
- the current generated in the plurality of thermoelectric devices may be used to power any electrical appliance, such as lights, computers, controllers, robots, data storage devices, and other similar appliances.
- the current may be supplied to batteries 76 and 78 for storage.
- the stored electricity may be used as needed as an uninterrupted power supply (UPS), which may be needed should a power outage to the system occur.
- UPS can provide up to between about 12 and 24 volts for at least 2 to 3 minutes of operation.
- thermoelectric generators and coolers such as those described above, which are capable of being used in heat management system 40, are available commercially from various manufacturers and distributors, such as Global Thermoelectric, of Humble, Texas and MELCOR, of Trenton, New Jersey. In most cases, these generators/coolers can be tailored to provide the desired voltage outputs for a selected range of temperature difference over the thermoelectric materials.
- a thermoelectric generator design solution was prepared by MELCOR, for a heat management system in accordance with the present invention having a hot side temperature of about 200 C, a cool side temperature of about 25 C, a voltage requirement of about 12 volts, and a current requirement of about 1 amp.
- the solution includes using three MELCOR Model HT6- 12-40 thermoelectric generators, in series.
- the three generators are capable of producing a total voltage of about 13 volts, a total current of about 1.4 amps, and a total power of about 19 watts.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001579338A JP2003532288A (en) | 2000-04-26 | 2001-04-19 | Thermal management in wafer processing equipment using thermoelectric devices |
EP01927247A EP1277228A2 (en) | 2000-04-26 | 2001-04-19 | Heat management in wafer processing equipment using thermoelectric device |
KR1020017016633A KR20020031346A (en) | 2000-04-26 | 2001-04-19 | Heat management in wafer processing equipment using thermoelectric device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/558,522 | 2000-04-26 | ||
US09/558,522 US6271459B1 (en) | 2000-04-26 | 2000-04-26 | Heat management in wafer processing equipment using thermoelectric device |
Publications (2)
Publication Number | Publication Date |
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WO2001082343A2 true WO2001082343A2 (en) | 2001-11-01 |
WO2001082343A3 WO2001082343A3 (en) | 2002-02-28 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2001/012832 WO2001082343A2 (en) | 2000-04-26 | 2001-04-19 | Heat management in wafer processing equipment using thermoelectric device |
Country Status (6)
Country | Link |
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US (1) | US6271459B1 (en) |
EP (1) | EP1277228A2 (en) |
JP (1) | JP2003532288A (en) |
KR (1) | KR20020031346A (en) |
TW (1) | TWI238552B (en) |
WO (1) | WO2001082343A2 (en) |
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US10553773B2 (en) | 2013-12-06 | 2020-02-04 | Sridhar Kasichainula | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs |
US10566515B2 (en) | 2013-12-06 | 2020-02-18 | Sridhar Kasichainula | Extended area of sputter deposited N-type and P-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US11024789B2 (en) | 2013-12-06 | 2021-06-01 | Sridhar Kasichainula | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs |
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US11276810B2 (en) | 2015-05-14 | 2022-03-15 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US11283000B2 (en) | 2015-05-14 | 2022-03-22 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US10290794B2 (en) | 2016-12-05 | 2019-05-14 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
US10516088B2 (en) | 2016-12-05 | 2019-12-24 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
US10559738B2 (en) | 2016-12-05 | 2020-02-11 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
WO2022060563A1 (en) * | 2020-09-17 | 2022-03-24 | Applied Materials, Inc. | Methods and apparatus for warpage correction |
Also Published As
Publication number | Publication date |
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WO2001082343A3 (en) | 2002-02-28 |
KR20020031346A (en) | 2002-05-01 |
EP1277228A2 (en) | 2003-01-22 |
TWI238552B (en) | 2005-08-21 |
JP2003532288A (en) | 2003-10-28 |
US6271459B1 (en) | 2001-08-07 |
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