WO2000012520A1 - Methods for preparing ruthenium and osmium compounds - Google Patents

Methods for preparing ruthenium and osmium compounds Download PDF

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WO2000012520A1
WO2000012520A1 PCT/US1999/017052 US9917052W WO0012520A1 WO 2000012520 A1 WO2000012520 A1 WO 2000012520A1 US 9917052 W US9917052 W US 9917052W WO 0012520 A1 WO0012520 A1 WO 0012520A1
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formula
solvent system
group
complex
prepared
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PCT/US1999/017052
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French (fr)
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Stefan Uhlenbrock
Brian A. Vaartstra
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Micron Technology, Inc.
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Priority to JP2000567541A priority Critical patent/JP2002523516A/en
Priority to AU52365/99A priority patent/AU5236599A/en
Publication of WO2000012520A1 publication Critical patent/WO2000012520A1/en

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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00Metallocenes
    • C07F17/02Metallocenes of metals of Groups 8, 9 or 10 of the Periodic System
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
    • C07F15/0006Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System compounds of the platinum group
    • C07F15/002Osmium compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
    • C07F15/0006Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System compounds of the platinum group
    • C07F15/002Osmium compounds
    • C07F15/0026Osmium compounds without a metal-carbon linkage
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
    • C07F15/0006Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System compounds of the platinum group
    • C07F15/0046Ruthenium compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
    • C07F15/0006Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System compounds of the platinum group
    • C07F15/0046Ruthenium compounds
    • C07F15/0053Ruthenium compounds without a metal-carbon linkage

Definitions

  • This invention relates to the preparation of ruthenium and osmium compounds, which are particularly useful as chemical vapor deposition precursors.
  • Metals and metal oxides are becoming important for a variety of electronic and electrochemical applications.
  • high quality RuO 2 thin films deposited on silicon wafers have recently gained interest for use in ferroelectric memories.
  • Ruthenium and osmium films are generally unreactive to silicon and metal oxides, resistant to diffusion of oxygen and silicon, and are good conductors. Oxides of these metals also possess these properties, although perhaps to a different extent.
  • films of ruthenium and osmium and oxides thereof have suitable properties for a variety of uses in integrated circuits. For example, they can be used in integrated circuits for electrical contacts. They are particularly suitable for use as barrier layers between the dielectric material and the silicon substrate in memory devices, such as ferroelectric memories. Furthermore, they may even be suitable as the plate (i.e., electrode) itself in capacitors.
  • ruthenium and osmium compounds that can be used as precursors for the preparation of such films. Many are particularly well suited for use in chemical vapor deposition techniques. See, for example, U.S. Pat. No. 5,372,849 (McCormick et al.), which discloses the use of ruthenium and osmium compounds containing carbonyl ligands and other ligands. Typically, such compounds can be prepared by the thermal or photolytic reaction of Ru 3 (CO) 12 or Os 3 (CO) 12 with a neutral two electron donor ligand in benzene. See, for example, Johnson et al., Nature, 901-902 (1967), and Cowles et al., Chem.
  • M is Ru or Os
  • each L is indepedently a neutral ligand
  • These methods involve the reaction of Ru 3 (CO) 12 or Os 3 (CO) 12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.
  • the solvent system can include one solvent, such as toluene, xylene, substituted benzene, heptane, octane, nonane, or an azeotropic mixture.
  • the azeotropic mixture can contain one or more solvents having a boiling point at atmospheric pressure higher than that of benzene.
  • the product yields are preferably higher than conventional methods, and the reaction times are shorter than conventional methods.
  • a complex of Formula I is prepared in greater than about 90% yield, more preferably, in greater than about 95% yield, and most preferably, in greater than about 99% yield.
  • a complex of Formula I is prepared in no greater than about 36 hours, and more preferably, in no greater than about 24 hours.
  • the present invention provides methods for the preparation of compounds of the formula (Formula I):
  • complexes are neutral complexes and may be liquids or solids at room temperature. Typically, they are liquids. If they are solids, they are sufficiently soluble in an organic solvent to allow for vaporization, they can be flash vaporized or sublimed from the solid state, or they have melting temperatures below their decomposition temperatures.
  • complexes described herein are suitable for use in chemical vapor deposition (CVD) techniques, such as flash vaporization techniques, bubbler techniques, and/or microdroplet techniques. Preferred embodiments of the complexes described herein are particularly suitable for low temperature CVD techniques.
  • These methods involve the reaction of Ru 3 (CO) 12 or Os 3 (CO) 12 (referred to herein as "trimer”) with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.
  • the reaction can occur thermally or photolytically.
  • the solvent system having a boiling point higher than that of benzene at atmospheric pressure can include one solvent or a mixture of solvents that may form an azeotrope.
  • the solvent system includes one or more solvents that are less hazardous to an individual than benzene.
  • the solvents that are suitable for this application can be one or more of the following: saturated or unsaturated hydrocarbons (preferably, C 6 -C 20 , cyclic, branched, or linear), aromatic hydrocarbons (preferably, C 6 -C 20 ), halogenated hydrocarbons, silylated hydrocarbons such as alkylsilanes, alkylsilicates, ethers, polyethers, thioethers, esters, lactones, amides, amines (aliphatic or aromatic, primary, secondary, or tertiary), polyamines, nitriles, cyanates, isocyanates, thiocyanates, silicone oils, aldehydes, ketones, diketones, carboxylic acids, alcohols, thiols, or compounds containing combinations of any of the above, or mixtures of one or more of the above.
  • saturated or unsaturated hydrocarbons preferably, C 6 -C 20 , cyclic, branched, or linear
  • the solvent system preferably includes, for example, toluene, xylene, substituted benzene (e.g., ethylbenzene), heptane, octane, nonane, or mixtures, particularly azeotropic mixtures thereof.
  • the mixtures can contain one or more solvents having a boiling point higher than that of benzene at atmospheric pressure.
  • the ligands L that are suitable for use in the preparation of compounds of Formula I include neutral ligands.
  • Examples of such ligands include phosphines (R 3 P), phosphites ((RO) 3 P), amines (R 3 N), arsines (R 3 As), stibenes (R 3 Sb), ethers (R 2 O), sulfides (R 2 S), nitriles (RCN), isonitriles (RNC), thiocarbonyls (CS), monoalkenes (linear, branched, or cyclic), dienes (linear, branched, or cyclic), trienes (linear, branched, or cyclic), bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes, and alkynes.
  • each of the unsaturated ligands (monoalkenes, dienes, trienes, alkynes, etc.) are not shown, they would also include R groups attached to the main carbon chain.
  • the R groups can be hydrogen, a halide (particularly fluorine), or an organic group, which may be substituted or unsubstituted.
  • the organic R groups preferably include about 1 to about 8 carbon atoms, and more preferably, about 1 to about 2 carbon atoms.
  • the unsaturated ligands preferably include about 4 to about 8 carbon atoms, and more preferably, about 6 to about 8 carbon atoms.
  • the neutral ligands are selected from the group of linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, and combinations thereof.
  • organic group means a hydrocarbon group (with optional elements other than carbon and hydrogen, such as oxygen, nitrogen, sulfur, and silicon) that is classified as an aliphatic group, cyclic group, or combination of aliphatic and cyclic groups (e.g., alkaryl and aralkyl groups).
  • the organic groups are those that do not interfere with the formation of compounds of Formula I.
  • aliphatic group means a saturated or unsaturated linear or branched hydrocarbon group. This term is used to encompass alkyl, alkenyl, and alkynyl groups, for example.
  • alkyl group means a saturated linear or branched hydrocarbon group including, for example, methyl, ethyl, isopropyl, t-butyl, heptyl, dodecyl, octadecyl, amyl, 2-ethylhexyl, and the like.
  • alkenyl group means an unsaturated, linear or branched hydrocarbon group with one or more carbon- carbon double bonds, such as a vinyl group.
  • alkynyl group means an unsaturated, linear or branched hydrocarbon group with one or more carbon- carbon triple bonds.
  • cyclic group means a closed ring hydrocarbon group that is classified as an alicyclic group, aromatic group, or heterocyclic group.
  • alicyclic group means a cyclic hydrocarbon group having properties resembling those of aliphatic groups.
  • aromatic group or “aryl group” means a mono- or polynuclear aromatic hydrocarbon group.
  • heterocyclic group means a closed ring hydrocarbon in which one or more of the atoms in the ring is an element other than carbon (e.g., nitrogen, oxygen, sulfur, etc.).
  • substitution is anticipated on the organic groups of the complexes of the present invention.
  • group and “moiety” are used to differentiate between chemical species that allow for substitution or that may be substituted and those that do not allow or may not be so substituted.
  • group when the term “group” is used to describe a chemical substituent, the described chemical material includes the unsubstituted group and that group with O, N, Si, or S atoms, for example, in the chain (as in an alkoxy group) as well as carbonyl groups or other conventional substitution.
  • moiety is used to describe a chemical compound or substituent, only an unsubstituted chemical material is intended to be included.
  • alkyl group is intended to include not only pure open chain saturated hydrocarbon alkyl substituents, such as methyl, ethyl, propyl, t-butyl, and the like, but also alkyl substituents bearing further substituents known in the art, such as hydroxy, alkoxy, alkylsulfonyl, halogen atoms, cyano, nitro, amino, carboxyl, etc.
  • alkyl group includes ether groups, haloalkyls, nitroalkyls, carboxyalkyls, hydroxyalkyls, sulfoalkyls, etc.
  • alkyl moiety is limited to the inclusion of only pure open chain saturated hydrocarbon alkyl substituents, such as methyl, ethyl, propyl, t-butyl, and the like.
  • Complexes of Formula I are disclosed, for example in U.S. Pat. No. 5,372,849 (McCormick et al.) and Applicants' Assignees' copending patent application entitled "Precursor Chemistries for Chemical Vapor Deposition of
  • a preferred class of complexes formed by the methods of the present invention include (cyclohexadienyl)Ru(CO) 3 and (cycloheptadienyl)Ru(CO) 3 . These complexes are particularly advantageous because they are volatile liquids.
  • the methods of the present invention include using the ligand L in an excess amount (e.g., up to about a 20-fold excess, and preferably, about 3- fold to about 10-fold excess) relative to the ruthenium or osmium trimer, optionally in the presence of CO, at a temperature at which the solvent system refluxes.
  • the total amount of ligand L can be added to the trimer initially, or it can be added in portions throughout the reaction. Alternatively, the total amount of trimer or portions thereof may be added to ligand L.
  • the reaction can be carried out in air, however, it is preferably carried out in an inert atmosphere (e.g., nitrogen or argon) using refluxing apparatus.
  • a solvent or mixture of solvents having a boiling point greater than that of benzene at atmospheric pressure produces a complex of Formula I in relatively high yields (preferably, greater than about 90%) yield, more preferably, greater than about 95%, and most preferably, greater than about 99%) in a relatively short period of time (preferably, in no greater than about 36 hours, and more preferably, in no greater than about 24 hours).
  • the present invention can provide significantly shorter reaction times and higher yields.
  • the product can be isolated from the reaction mixture in a variety of ways. Typically, it is isolated by removing the solvent(s) and unreacted ligand in vacuo, with optional heating of the reaction mixture. Significantly, once removed from the product, the solvent(s) and unreacted ligand can be reused by adding trimer in the desired amount.
  • Tricarbonyl(l,3-cvclohentadiene)ruthenium Under an atmosphere of dry argon, toluene (20 mL) and 1,3- cycloheptadiene (2.0 mL, 1.74 g, 18.4 mmol) are added to triruthenium dodecacarbonyl (1.0 g, 1.56 mmol). The red colored reaction mixture is heated to reflux. After 24 hours, the solution has a red/yellow color and the reflux was stopped. The solvent and the unreacted ligand were removed in vacuo.

Abstract

The present invention provides methods for the preparation of compounds of the formula (I): LyM(CO)z wherein M is Ru or Os, each L is independently a neutral ligand, y= 1-4, and z= 1-5. These methods involve the reaction of RU3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.

Description

METHODS FOR PREPARING
RUTHENIUM AND OSMIUM COMPOUNDS
Field of the Invention
This invention relates to the preparation of ruthenium and osmium compounds, which are particularly useful as chemical vapor deposition precursors.
Background of the Invention
Films of metals and metal oxides, particularly ruthenium and osmium films and oxides thereof, are becoming important for a variety of electronic and electrochemical applications. For example, high quality RuO2 thin films deposited on silicon wafers have recently gained interest for use in ferroelectric memories. Ruthenium and osmium films are generally unreactive to silicon and metal oxides, resistant to diffusion of oxygen and silicon, and are good conductors. Oxides of these metals also possess these properties, although perhaps to a different extent.
Thus, films of ruthenium and osmium and oxides thereof have suitable properties for a variety of uses in integrated circuits. For example, they can be used in integrated circuits for electrical contacts. They are particularly suitable for use as barrier layers between the dielectric material and the silicon substrate in memory devices, such as ferroelectric memories. Furthermore, they may even be suitable as the plate (i.e., electrode) itself in capacitors.
There are a wide variety of ruthenium and osmium compounds that can be used as precursors for the preparation of such films. Many are particularly well suited for use in chemical vapor deposition techniques. See, for example, U.S. Pat. No. 5,372,849 (McCormick et al.), which discloses the use of ruthenium and osmium compounds containing carbonyl ligands and other ligands. Typically, such compounds can be prepared by the thermal or photolytic reaction of Ru3(CO)12 or Os3(CO)12 with a neutral two electron donor ligand in benzene. See, for example, Johnson et al., Nature, 901-902 (1967), and Cowles et al., Chem. Commun., 392 (1969). Although such reactions provide good yields (e.g., 80-90%), they require generally long reaction times (e.g., 4 days). Thus, there is a continuing need for methods for the preparation of such ruthenium and osmium compounds in high yields with shorter reaction times.
Summary of the Invention The present invention provides methods for the preparation of compounds of the formula (Formula I):
LyM(CO)z wherein M is Ru or Os, each L is indepedently a neutral ligand, y = 1-4, and z = 1-5. These methods involve the reaction of Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure. The solvent system can include one solvent, such as toluene, xylene, substituted benzene, heptane, octane, nonane, or an azeotropic mixture. The azeotropic mixture can contain one or more solvents having a boiling point at atmospheric pressure higher than that of benzene.
Using methods of the present invention, the product yields are preferably higher than conventional methods, and the reaction times are shorter than conventional methods. Preferably, using the methods of the present invention, a complex of Formula I is prepared in greater than about 90% yield, more preferably, in greater than about 95% yield, and most preferably, in greater than about 99% yield. Preferably, using the methods of the present invention, a complex of Formula I is prepared in no greater than about 36 hours, and more preferably, in no greater than about 24 hours. Detailed Description of Preferred Embodiments
The present invention provides methods for the preparation of compounds of the formula (Formula I):
LyM(CO)z wherein M is Ru or Os, each L is independently a neutral ligand, y = 1 -4
(preferably, 1-3, and more preferably, 1), and z = 1-5 (preferably, 1-3, and more preferably, 3). These complexes are neutral complexes and may be liquids or solids at room temperature. Typically, they are liquids. If they are solids, they are sufficiently soluble in an organic solvent to allow for vaporization, they can be flash vaporized or sublimed from the solid state, or they have melting temperatures below their decomposition temperatures. Thus, such complexes described herein are suitable for use in chemical vapor deposition (CVD) techniques, such as flash vaporization techniques, bubbler techniques, and/or microdroplet techniques. Preferred embodiments of the complexes described herein are particularly suitable for low temperature CVD techniques.
These methods involve the reaction of Ru3(CO)12 or Os3(CO)12 (referred to herein as "trimer") with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure. The reaction can occur thermally or photolytically. The solvent system having a boiling point higher than that of benzene at atmospheric pressure can include one solvent or a mixture of solvents that may form an azeotrope. Preferably, the solvent system includes one or more solvents that are less hazardous to an individual than benzene.
The solvents that are suitable for this application can be one or more of the following: saturated or unsaturated hydrocarbons (preferably, C6-C20, cyclic, branched, or linear), aromatic hydrocarbons (preferably, C6-C20), halogenated hydrocarbons, silylated hydrocarbons such as alkylsilanes, alkylsilicates, ethers, polyethers, thioethers, esters, lactones, amides, amines (aliphatic or aromatic, primary, secondary, or tertiary), polyamines, nitriles, cyanates, isocyanates, thiocyanates, silicone oils, aldehydes, ketones, diketones, carboxylic acids, alcohols, thiols, or compounds containing combinations of any of the above, or mixtures of one or more of the above. The solvent system preferably includes, for example, toluene, xylene, substituted benzene (e.g., ethylbenzene), heptane, octane, nonane, or mixtures, particularly azeotropic mixtures thereof. The mixtures can contain one or more solvents having a boiling point higher than that of benzene at atmospheric pressure.
The ligands L that are suitable for use in the preparation of compounds of Formula I include neutral ligands. Examples of such ligands include phosphines (R3P), phosphites ((RO)3P), amines (R3N), arsines (R3As), stibenes (R3Sb), ethers (R2O), sulfides (R2S), nitriles (RCN), isonitriles (RNC), thiocarbonyls (CS), monoalkenes (linear, branched, or cyclic), dienes (linear, branched, or cyclic), trienes (linear, branched, or cyclic), bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes, and alkynes. Although the structures for each of the unsaturated ligands (monoalkenes, dienes, trienes, alkynes, etc.) are not shown, they would also include R groups attached to the main carbon chain. The R groups can be hydrogen, a halide (particularly fluorine), or an organic group, which may be substituted or unsubstituted. The organic R groups preferably include about 1 to about 8 carbon atoms, and more preferably, about 1 to about 2 carbon atoms. The unsaturated ligands preferably include about 4 to about 8 carbon atoms, and more preferably, about 6 to about 8 carbon atoms. Preferably, the neutral ligands are selected from the group of linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, and combinations thereof.
As used herein, the term "organic group" means a hydrocarbon group (with optional elements other than carbon and hydrogen, such as oxygen, nitrogen, sulfur, and silicon) that is classified as an aliphatic group, cyclic group, or combination of aliphatic and cyclic groups (e.g., alkaryl and aralkyl groups). In the context of the present invention, the organic groups are those that do not interfere with the formation of compounds of Formula I. The term "aliphatic group" means a saturated or unsaturated linear or branched hydrocarbon group. This term is used to encompass alkyl, alkenyl, and alkynyl groups, for example. The term "alkyl group" means a saturated linear or branched hydrocarbon group including, for example, methyl, ethyl, isopropyl, t-butyl, heptyl, dodecyl, octadecyl, amyl, 2-ethylhexyl, and the like. The term "alkenyl group" means an unsaturated, linear or branched hydrocarbon group with one or more carbon- carbon double bonds, such as a vinyl group. The term "alkynyl group" means an unsaturated, linear or branched hydrocarbon group with one or more carbon- carbon triple bonds. The term "cyclic group" means a closed ring hydrocarbon group that is classified as an alicyclic group, aromatic group, or heterocyclic group. The term "alicyclic group" means a cyclic hydrocarbon group having properties resembling those of aliphatic groups. The term "aromatic group" or "aryl group" means a mono- or polynuclear aromatic hydrocarbon group. The term "heterocyclic group" means a closed ring hydrocarbon in which one or more of the atoms in the ring is an element other than carbon (e.g., nitrogen, oxygen, sulfur, etc.).
Substitution is anticipated on the organic groups of the complexes of the present invention. As a means of simplifying the discussion and recitation of certain terminology used throughout this application, the terms "group" and "moiety" are used to differentiate between chemical species that allow for substitution or that may be substituted and those that do not allow or may not be so substituted. Thus, when the term "group" is used to describe a chemical substituent, the described chemical material includes the unsubstituted group and that group with O, N, Si, or S atoms, for example, in the chain (as in an alkoxy group) as well as carbonyl groups or other conventional substitution. Where the term "moiety" is used to describe a chemical compound or substituent, only an unsubstituted chemical material is intended to be included. For example, the phrase "alkyl group" is intended to include not only pure open chain saturated hydrocarbon alkyl substituents, such as methyl, ethyl, propyl, t-butyl, and the like, but also alkyl substituents bearing further substituents known in the art, such as hydroxy, alkoxy, alkylsulfonyl, halogen atoms, cyano, nitro, amino, carboxyl, etc. Thus, "alkyl group" includes ether groups, haloalkyls, nitroalkyls, carboxyalkyls, hydroxyalkyls, sulfoalkyls, etc. On the other hand, the phrase "alkyl moiety" is limited to the inclusion of only pure open chain saturated hydrocarbon alkyl substituents, such as methyl, ethyl, propyl, t-butyl, and the like. Complexes of Formula I are disclosed, for example in U.S. Pat. No. 5,372,849 (McCormick et al.) and Applicants' Assignees' copending patent application entitled "Precursor Chemistries for Chemical Vapor Deposition of
Ruthenium and Ruthenium Oxide" having Serial No. (Micron Docket No. 97-0675), filed on even date herewith. A preferred class of complexes formed by the methods of the present invention include (cyclohexadienyl)Ru(CO)3 and (cycloheptadienyl)Ru(CO)3. These complexes are particularly advantageous because they are volatile liquids.
The methods of the present invention include using the ligand L in an excess amount (e.g., up to about a 20-fold excess, and preferably, about 3- fold to about 10-fold excess) relative to the ruthenium or osmium trimer, optionally in the presence of CO, at a temperature at which the solvent system refluxes. The total amount of ligand L can be added to the trimer initially, or it can be added in portions throughout the reaction. Alternatively, the total amount of trimer or portions thereof may be added to ligand L. The reaction can be carried out in air, however, it is preferably carried out in an inert atmosphere (e.g., nitrogen or argon) using refluxing apparatus.
Significantly, using a solvent or mixture of solvents having a boiling point greater than that of benzene at atmospheric pressure produces a complex of Formula I in relatively high yields (preferably, greater than about 90%) yield, more preferably, greater than about 95%, and most preferably, greater than about 99%) in a relatively short period of time (preferably, in no greater than about 36 hours, and more preferably, in no greater than about 24 hours). Compared to the same reaction in benzene, the present invention can provide significantly shorter reaction times and higher yields.
The product can be isolated from the reaction mixture in a variety of ways. Typically, it is isolated by removing the solvent(s) and unreacted ligand in vacuo, with optional heating of the reaction mixture. Significantly, once removed from the product, the solvent(s) and unreacted ligand can be reused by adding trimer in the desired amount. The following examples are offered to further illustrate the various specific and preferred embodiments and techniques. It should be understood, however, that many variations and modifications may be made while remaining within the scope of the present invention.
Examples All experiments were carried out under argon using standard inert gas techniques. FTIR spectra were run on a Nicolet Magna-IR 550 Spectrometer. Mass spectra were collected on a Varian Saturn II instrument. NMR spectra were obtained at Spectral Data Services, Champaign, IL.
Preparation of Tricarbonyl(l,3-cvclohexadiene)ruthenium
Under an atmosphere of dry argon, toluene (30 mL) and 1,3- cyclohexadiene (22.3 mL, 18.75 g, 234 mmol) were added to triruthenium dodecacarbonyl (10 g, 15.6 mmol). The red colored reaction mixture was heated to reflux. After 24 hours, the solution had a red/yellow color and the reflux was stopped. The solvent and the unreacted ligand were removed in vacuo. Vacuum distillation of the remaining solution yielded tricarbonyl(l,3- cyclohexadiene)ruthenium (12 g, 45.2 mmol) as a light yellow liquid that was collected at approximately 35°C and 50 mTorr. Yield: 96.6%. FTIR (in Nujol): 2061, 2986, 1953, 1181, 585, 558, 529, 504 cm 1. Η NMR (in C6D6): δ 4.8 dd, 2.8 m, 1.4 m. ,3C['H] NMR (in C6D6): δ 199 s, 87 d, 56 d, 25 t. Mass spec: m/e 236, 208, 153, 130, 102, 78, 63, 39.
For comparison purposes, see Applicants' Assignees' copending patent application entitled "Precursor Chemistries for Chemical Vapor
Deposition of Ruthenium nad Ruthenium Oxide" having Serial No.
(Micron Docket No. 97-0675), filed on even date herewith. Therein, the above complex was synthesized in refluxing benzene, producing a yield of about 70% and requiring a reaction time of about 5 days.
Preparation of Tricarbonyl(l,3-cvclohentadiene)ruthenium Under an atmosphere of dry argon, toluene (20 mL) and 1,3- cycloheptadiene (2.0 mL, 1.74 g, 18.4 mmol) are added to triruthenium dodecacarbonyl (1.0 g, 1.56 mmol). The red colored reaction mixture is heated to reflux. After 24 hours, the solution has a red/yellow color and the reflux was stopped. The solvent and the unreacted ligand were removed in vacuo. Vacuum distillation of the remaining solution yields tricarbonyl(l,3- cycloheptadiene)ruthenium as a light yellow liquid that is collected at approximately 50°C and 70 mTorr. FTIR (in Nujol): 3038, 2981, 2060, 1995,
1970, 1055, 580, 560, 525 cm". Η NMR (in C6D6): δ 4.8 dd, 2.7 m, 1.65 m, 1.15 m. 13C['H] NMR (in C6D6): δ 90 d, 54 d, 28 t, 27.5 t.
All patents, patent applications, and publications are herein incorporated by reference in their entirety, as if each were individually incorporated. The foregoing detailed description and examples have been given for clarity of understanding only. No unnecessary limitations are to be understood therefrom. The invention is not limited to the exact details shown and described, for variations obvious to one skilled in the art will be included within the invention defined by the claims.

Claims

WHAT IS CLAIMED IS:
1. A method for the preparation of a compound of the formula:
LyM(CO)z wherein M is Ru or Os, each L is independently a neutral ligand, y = 1-4, and z = 1-5, the method comprising reacting Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.
2. The method of claim 1 wherein the solvent system comprises only one solvent.
3. The method of claim 1 wherein the solvent system comprises only two or more solvents.
4. The method of claim 1 wherein the solvent system comprises a solvent selected from the group of saturated or unsaturated hydrocarbons, aromatic hydrocarbons, halogenated hydrocarbons, silylated hydrocarbons, ethers, polyethers, thioethers, esters, lactones, amides, amines, polyamines, nitriles, cyanates, isocyanates, thiocyanates, silicone oils, aldehydes, ketones, diketones, carboxylic acids, alcohols, thiols, and mixtures of one or more of the above.
5. The method of claim 4 wherein the solvent system comprises at least one solvent selected from the group of toluene, xylene, substituted benzene, heptane, octane, nonane, and combinations thereof.
6. The method of claim 1 wherein a complex of Formula I is prepared in an amount of greater than about 90%.
7. The method of claim 6 wherein a complex of Formula I is prepared in an amount of greater than about 95%>.
8. The method of claim 7 wherein a complex of Formula I is prepared in an amount of greater than about 99%).
9. The method of claim 1 wherein a complex of Formula I is prepared in an amount of greater than about 90% in no greater than about 36 hours.
10. The method of claim 9 wherein a complex of Formula I is prepared in an amount of greater than about 90% in no greater than about 24 hours.
11. The method of claim 1 wherein each L is indepedently selected from the group of phosphines, phosphites, amines, arsines, stibenes, ethers, sulfides, alkylidenes, nitriles, isonitriles, thiocarbonyls, linear, branched, or cyclic monoalkenes, linear, branched, or cyclic dienes, linear, branched, or cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes, and alkynes.
12. The method of claim 11 wherein L is selected from the group of linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, and combinations thereof.
13. A method for the preparation of a compound of the formula:
LyM(CO)z wherein M is Ru or Os, each L is independently a neutral ligand, y = 1-4, and z = 1-5, the method comprising reacting Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure; wherein the solvent system comprises at least one solvent selected from the group of toluene, xylene, substituted benzene, heptane, octane, nonane, and combinations thereof; and further wherein a complex of Formula I is prepared in an amount of greater than about 90%).
14. A method for the preparation of a compound of the formula:
LyM(CO)z wherein M is Ru or Os, each L is independently a neutral ligand, y = 1-4, and z = 1-5, the method comprising reacting Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure; wherein the solvent system comprises at least one solvent selected from the group of toluene, xylene, substituted benzene, heptane, octane, nonane, and combinations thereof; and further wherein a complex of Formula I is prepared in an amount of greater than about 90% in no greater than about 36 hours.
15. A method for the preparation of a compound of the formula:
LyM(CO)z wherein M is Ru or Os, each L is independently a neutral ligand, y = 1-4, and z = 1-5, the method comprising reacting Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure; wherein a complex of Formula I is prepared in an amount of greater than about 95% in no greater than about 24 hours.
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Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6444264B2 (en) * 1995-03-31 2002-09-03 Advanced Technology Materials, Inc. Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions
US6271131B1 (en) 1998-08-26 2001-08-07 Micron Technology, Inc. Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
US6197628B1 (en) * 1998-08-27 2001-03-06 Micron Technology, Inc. Ruthenium silicide diffusion barrier layers and methods of forming same
US5962716A (en) * 1998-08-27 1999-10-05 Micron Technology, Inc. Methods for preparing ruthenium and osmium compounds
US6284655B1 (en) 1998-09-03 2001-09-04 Micron Technology, Inc. Method for producing low carbon/oxygen conductive layers
US6239028B1 (en) 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6323081B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
US6319832B1 (en) * 1999-02-19 2001-11-20 Micron Technology, Inc. Methods of making semiconductor devices
US6329286B1 (en) 1999-04-27 2001-12-11 Micron Technology, Inc. Methods for forming conformal iridium layers on substrates
US6380080B2 (en) * 2000-03-08 2002-04-30 Micron Technology, Inc. Methods for preparing ruthenium metal films
US6429127B1 (en) 2000-06-08 2002-08-06 Micron Technology, Inc. Methods for forming rough ruthenium-containing layers and structures/methods using same
US6903005B1 (en) 2000-08-30 2005-06-07 Micron Technology, Inc. Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics
US6461909B1 (en) 2000-08-30 2002-10-08 Micron Technology, Inc. Process for fabricating RuSixOy-containing adhesion layers
US6660631B1 (en) * 2000-08-31 2003-12-09 Micron Technology, Inc. Devices containing platinum-iridium films and methods of preparing such films and devices
JP2002212112A (en) * 2001-01-22 2002-07-31 Tanaka Kikinzoku Kogyo Kk Ruthenium compound for chemical vapor deposition and method for chemical vapor deposition of ruthenium thin film and ruthenium compound thin film
US6399492B1 (en) 2001-03-15 2002-06-04 Micron Technology, Inc. Ruthenium silicide processing methods
KR100727372B1 (en) 2001-09-12 2007-06-12 토소가부시키가이샤 Ruthenium complex, manufacturing process thereof and the method for forming thin-film using the complex
US6420583B1 (en) * 2001-09-27 2002-07-16 Praxair Technology, Inc Methods of synthesizing ruthenium and osmium compounds
KR100476556B1 (en) * 2002-04-11 2005-03-18 삼성전기주식회사 Piezoelectric transformer, housing for piezoelectric transformer and manufacture thereof
US7398209B2 (en) * 2002-06-03 2008-07-08 Voicebox Technologies, Inc. Systems and methods for responding to natural language speech utterance
US7910165B2 (en) * 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7264846B2 (en) * 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7404985B2 (en) * 2002-06-04 2008-07-29 Applied Materials, Inc. Noble metal layer formation for copper film deposition
US6737313B1 (en) * 2003-04-16 2004-05-18 Micron Technology, Inc. Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer
US7429402B2 (en) * 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US7265048B2 (en) * 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US8197898B2 (en) * 2005-03-29 2012-06-12 Tokyo Electron Limited Method and system for depositing a layer from light-induced vaporization of a solid precursor
US20070128862A1 (en) 2005-11-04 2007-06-07 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
US7833358B2 (en) * 2006-04-07 2010-11-16 Applied Materials, Inc. Method of recovering valuable material from exhaust gas stream of a reaction chamber
JP5248508B2 (en) * 2006-09-22 2013-07-31 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Method for depositing ruthenium-containing films
US20080152793A1 (en) * 2006-12-22 2008-06-26 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitaion Des Procedes Georges Claude Method for the deposition of a ruthenium containing film with aryl and diene containing complexes
EP1935897B1 (en) * 2006-12-22 2011-03-02 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude New organo-Ruthenium compound, the process for its preparation and its use as a ruthenium precursor to manufacture ruthenium based film coated metal electrodes
KR20100054806A (en) * 2007-07-24 2010-05-25 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 Ruthenium precursor with two differing ligands for use in semiconductor applications
US7737028B2 (en) * 2007-09-28 2010-06-15 Applied Materials, Inc. Selective ruthenium deposition on copper materials
WO2009057064A2 (en) * 2007-10-29 2009-05-07 L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Ruthenium and osmium precursor synthesis method
US8124528B2 (en) * 2008-04-10 2012-02-28 Micron Technology, Inc. Method for forming a ruthenium film
US20110045171A1 (en) * 2009-08-19 2011-02-24 International Business Machines Corporation Multi-Step Method to Selectively Deposit Ruthenium Layers of Arbitrary Thickness on Copper
US8357614B2 (en) 2010-04-19 2013-01-22 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Ruthenium-containing precursors for CVD and ALD
JP5992764B2 (en) * 2012-08-20 2016-09-14 田中貴金属工業株式会社 Chemical vapor deposition material comprising ruthenium complex, method for producing the same, and chemical vapor deposition method
US11913110B2 (en) 2020-01-31 2024-02-27 Tanaka Kikinzoku Kogyo K.K. Raw material for chemical deposition containing organoruthenium compound, and chemical deposition method using the raw material for chemical deposition
CN115003855A (en) 2020-01-31 2022-09-02 田中贵金属工业株式会社 Raw material for chemical vapor deposition comprising organic ruthenium compound and chemical vapor deposition method using the same
TWI789848B (en) 2020-08-04 2023-01-11 嶺南大學校產學協力團 Method for forming ruthenium thin film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5372849A (en) * 1992-07-28 1994-12-13 Minnesota Mining And Manufacturing Company Chemical vapor deposition of iron, ruthenium, and osmium

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
KR100325967B1 (en) * 1992-04-20 2002-06-20 윌리엄 비. 켐플러 Electrical connections to dielectric material
JP3407204B2 (en) * 1992-07-23 2003-05-19 オリンパス光学工業株式会社 Ferroelectric integrated circuit and method of manufacturing the same
US5392189A (en) * 1993-04-02 1995-02-21 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
US5352488A (en) * 1993-05-14 1994-10-04 Syracuse University Chemical vapor deposition process employing metal pentadienyl complexes
US5407855A (en) * 1993-06-07 1995-04-18 Motorola, Inc. Process for forming a semiconductor device having a reducing/oxidizing conductive material
US5566045A (en) * 1994-08-01 1996-10-15 Texas Instruments, Inc. High-dielectric-constant material electrodes comprising thin platinum layers
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
US6133159A (en) 1998-08-27 2000-10-17 Micron Technology, Inc. Methods for preparing ruthenium oxide films
US6074945A (en) 1998-08-27 2000-06-13 Micron Technology, Inc. Methods for preparing ruthenium metal films
US6517616B2 (en) 1998-08-27 2003-02-11 Micron Technology, Inc. Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide
US6541067B1 (en) 1998-08-27 2003-04-01 Micron Technology, Inc. Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same
US5962716A (en) 1998-08-27 1999-10-05 Micron Technology, Inc. Methods for preparing ruthenium and osmium compounds
US6063705A (en) 1998-08-27 2000-05-16 Micron Technology, Inc. Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5372849A (en) * 1992-07-28 1994-12-13 Minnesota Mining And Manufacturing Company Chemical vapor deposition of iron, ruthenium, and osmium

Non-Patent Citations (10)

* Cited by examiner, † Cited by third party
Title
BURT, JENNIFER C. ET AL: "Hydrocarbon complexes of ruthenium. III. Reactions of cycloheptatrienes with ruthenium carbonyl", J. CHEM. SOC., DALTON TRANS. (1975), (8), 731-6, XP002118223 *
CHEMICAL ABSTRACTS, vol. 109, no. 26, 26 December 1988, Columbus, Ohio, US; abstract no. 233267b, CHATZITHEODOROU, G. ET AL.: "low temperature chemical preparation of semiconducting transition metal chalcogenide films for energy conversion and storage, lubrication, and surface protection" XP002118225 *
DEGANELLO, G. ET AL.: "the reaction of cis-bicyclo(6.2.0)deca-2,4,6-triene with dodecacarbonyltriruthenium", JOURNAL OF ORGANOMETALLIC CHEMISTRY, vol. 90, 1975, pages c31 - c33, XP002118831 *
EDWARDS, ANDREW J. ET AL: "The photochemical generation of novel neutral mononuclear ruthenium complexes and their reactivity", J. ORGANOMET. CHEM. (1995), 503(1), 15-20, XP002118221 *
FERRARI, R.P. ET AL.: "reactions of dodecacarbonyltriosmium with dienic ligands", JOURNAL OF ORGANOMETALLIC CHEMISTRY, vol. 182, 1979, pages 245 - 249, XP002118830 *
MATER. RES. BULL., vol. 23, no. 9, 1988, pages 1261 - 1271 *
SCHUMANN, H. ET AL.: "tricarbonylbis(tri-t-butylphosphinn)eisen(0) und -ruthenium(0)", JOURNAL OF ORGANOMETALLIC CHEMISTRY, vol. 166, 1979, pages 233 - 239, XP002118829 *
SIEGL, W.O. ET AL.: "ruthenium(0) and ruthenium(II)complexes with 1,1,1-tris(diphenylphosphinomethyl)ethane", INORGANIC CHEMISTRY, vol. 12, no. 3, 1973, pages 674 - 677, XP002118828 *
SOSINSKY, BARRIE A. ET AL: "Hydrocarbon complexes of ruthenium. IV. Cyclic dienyl complexes", J. CHEM. SOC., DALTON TRANS. (1975), (16-17), 1633-40, XP002118222 *
WHITESIDES, THOMAS H. ET AL: "Cleavage of carbon-carbon sigma bonds by dodecacarbonyltriruthenium", J. CHEM. SOC., CHEM. COMMUN. (1973), (3), 87, XP002118224 *

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