WO1999002949A3 - Radiation sensing device - Google Patents

Radiation sensing device Download PDF

Info

Publication number
WO1999002949A3
WO1999002949A3 PCT/DE1998/001907 DE9801907W WO9902949A3 WO 1999002949 A3 WO1999002949 A3 WO 1999002949A3 DE 9801907 W DE9801907 W DE 9801907W WO 9902949 A3 WO9902949 A3 WO 9902949A3
Authority
WO
WIPO (PCT)
Prior art keywords
signal
radiation
radiation sensing
reset
sensing element
Prior art date
Application number
PCT/DE1998/001907
Other languages
German (de)
French (fr)
Other versions
WO1999002949A2 (en
Inventor
Thomas Streil
Gert Schoenfelder
Original Assignee
Thomas Streil
Gert Schoenfelder
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomas Streil, Gert Schoenfelder filed Critical Thomas Streil
Publication of WO1999002949A2 publication Critical patent/WO1999002949A2/en
Publication of WO1999002949A3 publication Critical patent/WO1999002949A3/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention relates to a radiation sensing device for detecting a radiation impinging upon said device, comprising at least one radiation sensing element which emits a signal generated by the incoming radiation. The invention also provides for a detection circuit which detects the signal generated by the radiation sensing element and for a reset circuit which is connected to the radiation sensing element in such a way that when the reset circuit is controlled by a reset signal the charge carriers generated by the incoming radiation recombine at a rate which is higher than the rate without reset signal. The detection circuit compares the detected signal with a reference signal and generates a reset signal and a pulse at the sensor output if the signal detected is the same as or greater than the reference signal.
PCT/DE1998/001907 1997-07-10 1998-07-09 Radiation sensing device WO1999002949A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19729606.8 1997-07-10
DE19729606A DE19729606C2 (en) 1997-07-10 1997-07-10 Radiation sensor device

Publications (2)

Publication Number Publication Date
WO1999002949A2 WO1999002949A2 (en) 1999-01-21
WO1999002949A3 true WO1999002949A3 (en) 1999-04-01

Family

ID=7835312

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1998/001907 WO1999002949A2 (en) 1997-07-10 1998-07-09 Radiation sensing device

Country Status (2)

Country Link
DE (1) DE19729606C2 (en)
WO (1) WO1999002949A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1590168A4 (en) 2003-01-16 2008-08-06 Ian Orde Michael Jacobs Methods, compositions and blends for forming articles having improved environmental stress crack resistance

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0675345A2 (en) * 1994-03-30 1995-10-04 Nec Corporation Device and method for receiving light used in ccd image sensor or the like
DE19510070C1 (en) * 1995-03-20 1996-08-08 Sarad Mikrosystems Gmbh Quantum radiation detector which resets at higher FET carrier recombination rate
US5565915A (en) * 1993-06-15 1996-10-15 Matsushita Electric Industrial Co., Ltd. Solid-state image taking apparatus including photodiode and circuit for converting output signal of the photodiode into signal which varies with time at variation rate depending on intensity of light applied to the photodiode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4118154A1 (en) * 1991-06-03 1992-12-10 Philips Patentverwaltung ARRANGEMENT WITH A SENSOR MATRIX AND RESET ARRANGEMENT
DE4224358C1 (en) * 1992-07-23 1993-10-28 Fraunhofer Ges Forschung High resolution radiation sensor - has multiplexer connecting reference capacitor and measuring capacitor integrating sensor current signal to sensor output

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5565915A (en) * 1993-06-15 1996-10-15 Matsushita Electric Industrial Co., Ltd. Solid-state image taking apparatus including photodiode and circuit for converting output signal of the photodiode into signal which varies with time at variation rate depending on intensity of light applied to the photodiode
EP0675345A2 (en) * 1994-03-30 1995-10-04 Nec Corporation Device and method for receiving light used in ccd image sensor or the like
DE19510070C1 (en) * 1995-03-20 1996-08-08 Sarad Mikrosystems Gmbh Quantum radiation detector which resets at higher FET carrier recombination rate

Also Published As

Publication number Publication date
DE19729606A1 (en) 1999-03-04
DE19729606C2 (en) 2000-06-29
WO1999002949A2 (en) 1999-01-21

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