WO1997050114A1 - A new non-thermal process for annealing crystalline materials - Google Patents
A new non-thermal process for annealing crystalline materials Download PDFInfo
- Publication number
- WO1997050114A1 WO1997050114A1 PCT/US1997/011113 US9711113W WO9750114A1 WO 1997050114 A1 WO1997050114 A1 WO 1997050114A1 US 9711113 W US9711113 W US 9711113W WO 9750114 A1 WO9750114 A1 WO 9750114A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- doped
- volume
- bulk
- crystalline
- energy
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU35795/97A AU3579597A (en) | 1996-06-26 | 1997-06-26 | A new non-thermal process for annealing crystalline materials |
CA002271125A CA2271125C (en) | 1996-06-26 | 1997-06-26 | A new non-thermal process for annealing crystalline materials |
EP97932303A EP0958595A4 (en) | 1996-06-26 | 1997-06-26 | A new non-thermal process for annealing crystalline materials |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/670,909 US6001715A (en) | 1996-06-26 | 1996-06-26 | Non-thermal process for annealing crystalline materials |
US08/670,909 | 1996-06-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997050114A1 true WO1997050114A1 (en) | 1997-12-31 |
Family
ID=24692388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1997/011113 WO1997050114A1 (en) | 1996-06-26 | 1997-06-26 | A new non-thermal process for annealing crystalline materials |
Country Status (5)
Country | Link |
---|---|
US (1) | US6001715A (en) |
EP (1) | EP0958595A4 (en) |
AU (1) | AU3579597A (en) |
CA (1) | CA2271125C (en) |
WO (1) | WO1997050114A1 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6372520B1 (en) * | 1998-07-10 | 2002-04-16 | Lsi Logic Corporation | Sonic assisted strengthening of gate oxides |
EP1328982B1 (en) * | 2000-03-24 | 2005-07-20 | Cymbet Corporation | Device enclosures and devices with integrated battery |
US7135423B2 (en) | 2002-05-09 | 2006-11-14 | Varian Semiconductor Equipment Associates, Inc | Methods for forming low resistivity, ultrashallow junctions with low damage |
US7211351B2 (en) * | 2003-10-16 | 2007-05-01 | Cymbet Corporation | Lithium/air batteries with LiPON as separator and protective barrier and method |
US7176112B2 (en) * | 2004-09-21 | 2007-02-13 | Atmel Corporation | Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material |
CA2615479A1 (en) | 2005-07-15 | 2007-01-25 | Cymbet Corporation | Thin-film batteries with polymer and lipon electrolyte layers and methods |
US7776478B2 (en) | 2005-07-15 | 2010-08-17 | Cymbet Corporation | Thin-film batteries with polymer and LiPON electrolyte layers and method |
US20110056531A1 (en) * | 2009-09-08 | 2011-03-10 | Gm Global Technology Operations, Inc. | Method for enhancing the performance of thermoelectric materials by irradiation-processing |
US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US8662442B2 (en) * | 2011-11-01 | 2014-03-04 | Textron Innovations Inc. | Active prop rotor stability system |
US9142465B1 (en) | 2013-03-13 | 2015-09-22 | Sandia Corporation | Precise annealing of focal plane arrays for optical detection |
WO2019173626A1 (en) | 2018-03-07 | 2019-09-12 | Space Charge, LLC | Thin-film solid-state energy-storage devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4154625A (en) * | 1977-11-16 | 1979-05-15 | Bell Telephone Laboratories, Incorporated | Annealing of uncapped compound semiconductor materials by pulsed energy deposition |
US5623307A (en) * | 1991-10-31 | 1997-04-22 | Textron Defense Systems, Division Of Avco Corporation | Apparatus for measuring surface movement of an object that is subjected to external vibrations |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3714357C2 (en) * | 1986-04-30 | 1994-02-03 | Toshiba Ceramics Co | Silicon wafer and method of manufacturing the same, and silicon wafer selector |
-
1996
- 1996-06-26 US US08/670,909 patent/US6001715A/en not_active Expired - Lifetime
-
1997
- 1997-06-26 WO PCT/US1997/011113 patent/WO1997050114A1/en active Application Filing
- 1997-06-26 CA CA002271125A patent/CA2271125C/en not_active Expired - Fee Related
- 1997-06-26 EP EP97932303A patent/EP0958595A4/en not_active Ceased
- 1997-06-26 AU AU35795/97A patent/AU3579597A/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4154625A (en) * | 1977-11-16 | 1979-05-15 | Bell Telephone Laboratories, Incorporated | Annealing of uncapped compound semiconductor materials by pulsed energy deposition |
US5623307A (en) * | 1991-10-31 | 1997-04-22 | Textron Defense Systems, Division Of Avco Corporation | Apparatus for measuring surface movement of an object that is subjected to external vibrations |
Non-Patent Citations (3)
Title |
---|
MASTER OF SCIENCE THESIS, December 1991, QI MU, "Laser Shock Annealing of Silicon: Boron Doped by Ion-Implantation with Phosphorus", pages 14, 18, 23 and 24. * |
MASTERS THESIS, SAM HOUSTON STATE UNIVERSITY, August 1990, JIAMING HUANG, "Laser Shocked Annealing of Radiation Damaged Silicon". * |
See also references of EP0958595A4 * |
Also Published As
Publication number | Publication date |
---|---|
US6001715A (en) | 1999-12-14 |
EP0958595A4 (en) | 2000-01-05 |
AU3579597A (en) | 1998-01-14 |
CA2271125C (en) | 2003-05-27 |
EP0958595A1 (en) | 1999-11-24 |
CA2271125A1 (en) | 1997-12-31 |
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