_C_L_A_I_M_S_
1. In combination, a first substrate made from a polycrystalline material, the substrate having a cavity, a bridging member supported at its opposite ends on the first substrate at the opposite ends of the cavity and extending into the cavity at an intermediate position, a first electrical contact on the bridging member at an intermediate position in the bridging member, a second substrate made from a insulating material and having at least a second electrical contact disposed to engage the first electrical contact, means on the bridging member for displacing the first electrical contact from the second electrical contact, and means for providing for a movement of the bridging member at selective times into an engagement of the first and second electrical contacts.
2. In a combination as set forth in claim 1, the opposite ends of the bridging member being disposed in a first direction, the second electrical contact constituting a pair of spaced contacts extending in a second direction transverse to the first direction, and electrical leads extending from the spaced contacts constituting the second electrical contact.
3. In a combination as set forth in claim 1, the first and second substrates being bonded,
there being a second cavity in the first substrate to expose the second substrate at the position of the second cavity, a bonding pad on the second substrate at the position of the second cavity, and an electrical lead extending from the second contact to the bonding pad.
4. In a combination as set forth in claim 3, the bridging member including a masking layer, a layer of an electrically conductive material disposed on the layer of the electrically insulating material and a layer of an electrically insulating material disposed on the layer of electrically conductive material.
5. In combination, a first substrate made from a semiconductor material, a second substrate made from an insulating material and bonded to the first substrate, a cavity in the first substrate, a bridging member supported by the first substrate at positions between the cavity and the pair of spaced positions and extending across the cavity, a first electrical contact disposed on the bridging member at a position above the cavity, an electrical contact disposed on the second substrate in facing relationship with the first electrical contact, means disposed on one of the substrates for producing a spacing between the first and second electrical contacts, and means for producing an electrical field to move the bridging member to a position for engagement of the first electrical contact with the second electrical contact.
6. In a combination as set forth in claim 5, the bridging member being deposited on the first substrate before the formation of the cavity, the bridging member including a layer of an insulating material with the first electrical contact disposed on the electrically insulating material in facing relationship to the second electrical contact in the cavity, there being holes in the layer of insulating material to provide for the etching of the cavity in the first substrate.
7. In a combination as set forth in claim 5, the bridging member being deposited on the first substrate before the formation of the cavity, and bumps deposited on the bridging member at positions between individual ones of the spaced positions and the first electrical contact to space the first electrical contact from the second electrical contact.
8. In a combination as set forth in claim 5, a second cavity in the first substrate at a position displaced from the cavity and one of the spaced positions, and an electrical lead extending along the surface of the second substrate from the second electrical contact to the position of the second cavity in the first substrate.
9. In combination, a bridging member, a substrate made from an electrically insulating material and supporting the bridging member at a pair of spaced positions for a pivotable movement of the bridging member in the length between the spaced positions, the bridging member including a masking layer having holes disposed at the spaced positions on the substrate, the bridging member including a layer of electrically conductive material disposed on the masking layer for pivotal movement with the layer of insulating material and supported in the holes, a layer of electrically insulating material on the layer of electrically conductive material, and an electrically conductive contact disposed on the layer of electrically insulating material at an intermediate position in the length of the bridging member between the pair of spaced positions.
10. In a combination as set forth in claim 9, the substrate having a cavity between the spaced positions, there being holes in the bridging member at intermediate positions in the length of the bridging member between the pair of spaced positions.
11. In a combination as set forth in claim 9, bumps disposed on the bridging member at positions between the electrical contact and the spaced positions.
12. In a combination as set forth in claim 9, a second substrate made from an electrically insulating material and bonded to the first substrate, and a second electrically conductive contact disposed on the second substrate for engagement with the first electrically conductive contact.
13. In a combination as set forth in claim 11, a second substrate made from an electrically insulating material and bonded to the first substrate, a second electrically conductive contact disposed on the second substrate for engagement with the first electrically conductive contact, the first electrically conductive contact being displaced by the bumps from the second electrically conductive contact, means for producing an electrical field between the first and second electrically conductive contacts to obtain a movement of the first electrically conductive contact toward the second electrically conductive contact, and means disposed on the second substrate to dissipate electrical charges produced by the electrical field between the first and second electrically conductive contacts.
14. In a combination in a wafer providing a plurality of relays, a first substrate made from a semiconductor material, a second substrate made from an insulating material, a first plurality of cavities disposed at spaced positions in the first substrate, the first and second substrates being bonded on opposite sides of each cavity in the first plurality,
pairs of contacts, each pair being disposed at the position of an individual one of the cavities in the first plurality in a normally spaced relationship, a particular one of the contacts in each pair being disposed on the second substrate and the other contact in each pair being disposed on the first substrate, means associated with the pair of contacts in each of the cavities in the first plurality for creating an electrical field to move at least one of the contacts in each pair into engagement with the other contact in such pair, a plurality of electrical leads each disposed on the second substrate and extending from the second substrate, and a second plurality of cavities each disposed between a progressive pair of the cavities in the first plurality to expose the electrical lead from the contact on the second substrate for an external electrical connection.
15. In a combination as set forth in claim 14, a plurality of bridging members each disposed in an individual one of the first cavities and each supported by the first substrate at positions on opposite sides of such individual cavity, the contact on the first substrate being supported on the first substrate by the bridging member at a position above the associated cavity, and a third plurality of cavities each disposed on the second substrate at a position corresponding to the disposition of the individual one of the bridging members on the first substrate, the contacts on the second substrate being disposed in the third cavities.
16. In a combination as set forth in claim 14, the first and second substrates being bonded in a particular area on opposite sides of each of the first cavities, each of the cavities in the second plurality being disposed beyond the adjacent ones of the particular areas of the seal, and a plurality of bridging members each disposed in an individual one of the first cavities and each supported by the first substrate at positions beyond such individual cavity and before the adjacent ones of the cavities in the second plurality.
17. In a combination as set forth in claim 16, each of the bridging members including a layer of an insulating material, there being holes extending through the insulating material in each of the bridging members to provide for the etching of the adjacent cavity in the first plurality.
18. In a combination as set forth in claim 15, a plurality of cavities each disposed on the second substrate at a position corresponding to the positions of support of an individual one of the bridging members on the first substrate.
19. In combination in a wafer providing a plurality of relays, a substrate made from a semiconductor material, a plurality of cavities disposed at spaced positions in the substrate and having opposite ends,
a plurality of bridging members each supported on the substrate at positions bridging an individual one of the cavities, each of the bridging members being supported by the substrate at the opposite ends of the individual one of the cavities for pivotal movement relative to the ends of the cavities as fulcrums, and a plurality of electrical contacts each disposed on an individual one of the bridging members between the fulcrum positions of such bridging member.
20. In a combination as set forth in claim 19, a plurality of bumps each disposed on an individual one of the bridging members between the contact on such bridging member and an individual one of the fulcrum positions on such bridging member.
21. In a combination as set forth in claim 19, the plurality of cavities constituting a first plurality, a second plurality of cavities each disposed on the substrate between an individual pair of adjacent cavities in the first plurality to facilitate the separation of the relays from the wafer at the positions of the second cavities.
22. In a combination as set forth in claim 21, a plurality of bumps disposed in pairs, each pair of bumps being disposed on an individual one of the bridging members, each of the bumps being disposed on the individual bridging member between the electrical contact on the bridging members and an adjacent one of the opposite ends of the associated one of the cavities in the first plurality.
23. In combination in a relay, a substrate made from a semiconductor material, a cavity disposed in the substrate and having opposite ends, a bridging member supported on the substrate at the opposite ends of the cavity, the bridging member being supported by the substrate for pivotal movement relative to the opposite ends of the cavity, and an electrical contact disposed on the bridging member between the opposite ends of the cavity.
24. In a combination as set forth in claim 23, a pair of bumps disposed on the bridging member, each of the bumps being disposed between the electrical contact and an individual one of the opposite ends of the cavity.
25. In a combination as set forth in claim 23, a second cavity disposed in the substrate at a position displaced from the first cavity.
26. In a combination as set forth in claim 24, the bridging member including a masking layer, a layer of an electrically conductive material on the masking layer and a layer of an electrically insulating material on the layer of the electrically conductive material.
27. In a combination as set forth in claim 24, the bridging member being formed to remove electrostatic charges formed in the relay.
28. In a combination as set forth in claim 26, the layer of the electrically insulating material being removed at isolated positions to expose the second layer for the removal of electrostatic charges formed in the relay.
29. In combination in a micromachined relay, a substrate made from a semiconductor material, a cavity disposed in the substrate and having opposite ends, a member bridging the cavity, the bridging member being supported by the substrate for pivotal movement relative to the opposite ends of the cavity as fulcrums, the bridging member including a masking layer and a layer of an electrically conductive material on the masking layer of the insulating material and a layer of an electrically insulating material on the layer of the electrically conductive material, and an electrical contact disposed on the layer of the insulating material at an intermediate position between the opposite ends of the cavity.
30. In a combination as set forth in claim 29, a pair of bumps each disposed on the second layer of the electrically insulating material at an intermediate position between the contact and an individual one of the opposite ends of the cavity.
31. In a combination as set forth in claim 30, the cavity constituting a first cavity, a second cavity displaced from the first cavity to define a boundary of the micromachined relay.
32. In a combination as set forth in claim 31, third cavities in the substrate at positions displaced on the substrate from the opposite ends of the first cavity, the layer of the electrically conductive material and the layer of insulating material being anchored in the third cavities.
33. In a combination as set forth in claim 30, the bridging layer being constructed to dissipate electrostatic charges in the layer of insulating material.
34. In a combination as set forth in claim 32, the insulating layer being removed at isolated positions to expose the electrically conductive layer for removing electrostatic charges in the insulating layer.
35. In combination in a micromachined relay, a substrate made from a semiconductor material having properties of being anisotropically etched, a cavity disposed in the substrate and formed from an anisotropic etching of the substrate, and having opposite ends, a bridging member supported on the substrate at the opposite ends of the cavity, the bridging member being provided with at least one hole at positions above the cavity to provide for the anisotropic etching of the cavity, and an electrical contact disposed on the bridging member at an intermediate position between the opposite edges of the cavity.
36. In a combination as set forth in claim 35, a pair of bumps each disposed on the bridging member between the electrical contact and an individual one of the opposite ends of the cavity.
37. In a combination as set forth in claim 35, the bridging member including a masking layer an electrically conductive layer on the masking layer and an insulating layer on the masking layer, the electrical contact being disposed on the dielectric layer.
38. In a combination as set forth in claim 35, the bridging member being constructed to dissipate electrostatic charges produced in the layer of the dielectric material, and a pair of bumps each disposed on the bridging member between the electrical contact and an individual one of the opposite ends of the cavity.
39. In a combination as set forth in claim 35, the cavity constituting a first cavity, and a second cavity disposed in the substrate at a position displaced from the first cavity and defining one of the boundaries of the micromachined relay.
40. In a combination as set forth in claim 38, the cavity constituting a first cavity, a second cavity disposed in the substrate a position displaced from the first cavity and defining one of the boundaries of the micromachined relay, the insulating layer being removed at isolated positions to expose the electrically conductive layer for dissipating electrical charges produced in the layer of dielectric material.
41. In combination in a micromachined relay, a substrate made from a semiconductor material and having a first surface, a pair of electrical contacts disposed on the first surface of the semiconductor material in displaced relationship to each other in a first direction, a layer of an electrically conductive material disposed on the first surface of the semiconductor material in displaced relationship to the electrical contacts in a second direction transverse to the first direction and extending in the second direction, and a pair of cavities disposed in the first surface at positions displaced in the transverse direction from the layer of the electrically conductive material and the electrical contacts.
42. In a combination as set forth in claim 41, a pair of electrical leads disposed on the first surface of the semiconductor material, each of the leads extending in the second direction from an individual one of the contacts to a position beyond one of the cavities, and a pair of bonding pads disposed on the first surface of the substrate, each bonding pad being connected to an individual one of the leads at the end of the lead opposite the associated contact.
43. In a combination as recited in claim 42, an additional cavity,
the electrical contacts being disposed in the additional cavity, the semiconductor material constituting a glass capable of retaining its dielectric properties at elevated temperatures.
44. In a combination as recited in claim 43, an additional pad disposed on the first surface of the substrate and electrically connected to the layer of the electrically conductive material, means for introducing an electrical voltage to the additional pad to produce an electrical field adjacent the first surface of the substrate.
45. In combination, a first insulating surface, a first electrical contact supported on the first insulating surface, a second insulating surface, a cavity disposed in the second insulating surface and having opposite ends, movable means disposed in the cavity and supported at the opposite ends of the cavity on the second insulating surface, a second electrical contact disposed on the movable means for engagement with the first electrical contact, means for biasing the movable means against engagement of the second electrical contact with the first electrical contact, and means disposed on at least one of the first and second insulating surfaces for creating an electrical field to move the movable means to a position in which the second electrical contact engages the first electrical contact.
46. In a combination as set forth in claim 45, insulating means defining the first insulating surface, semiconductor means defining the second insulating surface, the means for creating the electrical field including a conductive layer disposed on the first insulating surface in electrically isolated relationship with the first insulating surface.
47. In a combination as set forth in claim 46, the semiconductor means having anisotropic properties, and the movable means having holes to provide for the anisotropic etching of the semiconductor means.
48. In a combination as set forth in claim 45, a second cavity in the second insulating surface, and at least one electrical lead extending on the first insulating surface from the first electrical contact to the position of the second cavity, and a bonding pad at the end of the first electrical contact adjacent the second cavity.
49. In combination, a first fixedly positioned electrical contact, a second electrical contact movably disposed relative to the first contact for engagement with the first contact, first means having first and second opposite ends, second means for supporting the first means at the opposite ends of the first means, the first means being movable at intermediate positions relative to its opposite ends, the second electrical contact being disposed on the first means for movement with the first means into engagement with the first electrical contact, third means for biasing the first means relative to the first electrical contact for displacement of the second electrical contact from the first electrical contact, and fourth means for producing an electrical field for moving the first means into an engagement between the first electrical contact and the second electrical contact.
50. In a combination as set forth in claim 49, an electrical lead extending from the first electrical contact, a bonding pad at the end of the electrical lead, and the second means being constructed to expose the bonding pad for external electrical connections to the bonding pad.
51. In a combination as set forth in claim 49, the second means being constructed to provide for a pivotal movement of the first means relative to the first and second opposite ends of the second means as fulcrums.
52. In a combination as set forth in claim 45, the first means being constructed to provide for a dissipation of any electrostatic charge created on the first means by the electrical field.
53. In a combination as set forth in claim 50, the first means being constructed to provide for a dissipation of any electrostatic charge created on the first means by the electrical field, and the second means being made from a semiconductor material having dielectric properties.
54. In a combination recited in claim 49, the first means including an electrically conductive layer and a dielectric layer on the electrically conductive layer, the dielectric layer being removed from the electrically conductive layer at isolated positions to expose the electrically conductive layer for a dissipation of any electrostatic charge produced by the electrical field.
55. In a method of forming a micromachined relay, the steps of: providing a substrate made from semiconductor material having anisotropic properties, forming bridging means on the substrate with dielectric properties and with properties of withstanding etchant materials, forming at least one hole in the bridging means, applying an etchant material through the hole in the bridging means to etch a cavity in the substrate at positions below the bridging means with dimensions dependent upon the anisotropic properties of the substrate to separate a portion of the length of the bridging means from the cavity, and forming an electrical contact on the bridging means at an intermediate position along the separated portion of the length of the bridging means.
56. In a method as set forth in claim 52, the step of: forming a second cavity in the substrate at the same time as the formation of the first cavity in the substrate at a position displaced from the first cavity in the substrate.
57. In a method as set forth in claim 55, the steps of: providing the bridging means with a layer of an electrically conductive material and then with a layer of a insulating material, providing the at least one hole in the layer of the insulating material and the layer of the electrically conductive material, and etching the cavity through the at least one hole in the layer of the insulating material and the layer of the electrically conductive material.
58. In a method as set forth in claim 57, the step of: removing the layer of the insulating material from the layer of the electrically conductive material at isolated positions on the layer of the electrically conductive material to provide for a dissipation of any electrostatic charge on the layer of the insulating material .
59. In a method as set forth in claim 55, the step of: forming bumps on the bridging means between the electrical contact and the opposite peripheries of the cavity in the substrate.
60. In a method as set forth in claim 59, the step of: etching a second cavity in the substrate at a position displaced from the first cavity.
61. In a method as set forth in claim 58, the steps of: forming bumps on the bridging means between the contact and the opposite peripheries of the cavity in the substrate, and etching a second cavity in the substrate at a position displaced from the first cavity.
62. In a method of forming a micromachined relay, providing a substrate of a insulating material, forming at least a first cavity in the substrate, depositing a pair of electrical contacts in the at least first cavity, providing in the substrate second cavities disposed at strategic positions displaced from the first cavities, providing electrical leads extending on the substrate in electrically insulating relationship to each other from the electrical contacts to the edge of the substrate, and providing bonding pads at the ends of the electrical leads.
63. In a method as set forth in claim 62, the substrate having a first surface, the first cavity being formed in the first surface, the surfaces of the electrical contacts being flush with the first surface.
64. In a method as set forth in claim 63, providing electrically conductive material on the first surface of the substrate in electrically isolated relationship with the contacts and the electrical leads, and disposing an additional bonding pad on the first surface of the substrate in electrical communication with the electrically conductive material.
65. In a method of forming a micromachined relay as set forth in claim 64 , providing a second substrate of a dielectric material, providing a bridging member in the second substrate, providing a cavity, defined by opposite ends, in the second substrate at a position below the bridging member to provide for a pivotal movement of the bridging member about the ends of the cavity as fulcrums, and forming an electrical contact on the bridging member to provide for an engagement between this electrical contact and the electrical contacts on the substrate of the dielectric material in accordance with the pivotal movement of the bridging member.
66. In a method as set forth in claim 65, forming bumps on the bridging member between the electrical contact on the bridging member and the ends of the cavity to displace such electrical contact from the electrical contacts on the substrate of the dielectric material.
67. In a method as set forth in claim 66, bonding the first and second substrates of the dielectric material at positions beyond the ends of the cavity.
68. In a method as set forth in claim 67, providing a second cavity in the second substrate at the positions of the bonding pads at the ends of the electrical leads on the first substrate before the first and second substrates are bonded.
69. In combination in a relay, a first substrate made from an insulating material and having a first surface, first electrical contact means disposed on the first surface of the first substrate for providing electrical signals, first pads disposed on the first surface of the first substrate for providing for a passage from the relay of the signals on the first contacts, first means disposed on the first surface of the first substrate for producing an electrical field upon the introduction of voltages to the first means, second pads disposed on the first surface of the first substrate for receiving a voltage for introduction to the first means, a second substrate made from a semiconductor material and having a first surface bonded to the first surface of the first substrate, and second electrical contact means disposed in the electrical field produced by the first means for movement into engagement with the first contact means in accordance with the production of such electrical field.
70. In a combination as set forth in claim 69, the second substrate having a cavity, the second electrical contact means being disposed in the cavity for movement into engagement with the first contact means.
71. In a combination as set forth in claim 69, there being a cavity in the second substrate at the position of the pads on the first surface of the first substrate to expose the pads for electrical connections.
72. In a combination as set forth in claim 70, the cavity being evacuated before the bonding of the first surfaces of the first and second substrates.
73. In a combination as set forth in claim 70, the cavity constituting a first cavity, there being an additional cavity in the second substrate at the position of the pads on the first surface of the first substrate to expose the pads for electrical connections, the first cavity being evacuated before the bonding of the first surfaces of the first and second substrates.
74. In combination, a first substrate made from a semiconductor material, a second substrate made from an insulating material, the first substrate having a first surface, the second substrate having a first surface, the first surfaces of the first and second substrates being bonded, there being a cavity between the first surfaces of the first and second substrates in the bonded relationship of the first and second substrates, the cavity being evacuated of gases, and contacts disposed in the cavity and movable relative to each other in the cavity to establish an electrical continuity between the contacts.
75. In a combination as set forth in claim 74, means disposed in the cavity for producing an electrical field in the cavity to obtain the movement of the contacts relative to each other to establish the electrical continuity between the contacts.
76. In a combination as set forth in claim 74, means including a bridging member supporting one of the contacts in the cavity and movable with such contact tc establish the electrical continuity between the contacts, and the means including the electric member being constructed to dissipate any electrical charge accumulated on the dielectric member in the cavity.
77. In a combination as set forth in claim 73, the contacts being disposed in a substantially parallel relationship to each other, and means associated with at least one of the contacts for retaining the substantially parallel relationship between the contacts during the movement of the contacts relative to each other to establish the electrical continuity between the contacts.
78. In a combination as set forth in claim 76, the contacts being disposed in a substantially parallel relationship to each other, means associated with at least one of the contacts for retaining the substantially parallel relationship between the contacts during the movement of the contacts relative to each other to establish the electrical continuity between the contacts, means for providing for the introduction of an electrical voltage into the cavity to produce the electrical field in the cavity, and means for providing for the passage from the cavity of an electrical signal produced upon the establishment of the electrical continuity between the contacts.
79. A method of producing an electrical relay, including the steps of: providing a first substrate with a first surface, providing a second substrate with a first surface, disposing first contacts on the first surface of the first substrate, providing a first contact on the first surface of the second substrate, modifying the second substrate to provide for a pivotal movement of the first contact on the second substrate into engagement with the first contacts on the first substrate,
cleaning the contacts on the first and second substrates, and bonding the first surface of the first and second substrates.
80. A method as set forth in claim 79, including the step of: forming a vacuum between the first and second substrates before bonding the first surfaces of the first and second substrates.
81. A method as set forth in claim 79, wherein the second substrate is modified by forming a cavity in the second substrate around the first contact on the first surface of the second substrate to provide for the pivotal movement of the first contact on the second substrate into engagement with the first contacts on the first substrate.
82. A method as set forth in claim 79 wherein pads are provided on the first surface of the second substrate to provide for external connections to the pads and wherein the pads communicate electrically with the first contacts on the first substrate.
83. A method as set forth in claim 79 wherein the first contact on the second substrate is disposed on a bridging member movable relative to the first contacts on the first substrate to produce the electrical engagement between the first contact on the second substrate and the first contacts on the first substrate and wherein the bridging member is constructed to dissipate any electrical charges accumulated on such bridging member.
84. A method as set forth in claim 80 wherein pads are provided on the first surface of the second substrate to provide for external connections to the pads and wherein the pads communicate electrically with the first contacts on the first substrate and wherein the second substrate is modified by forming a cavity in the second substrate around the first contact on the first surface of the second substrate to provide for the pivotal movement of the first contact on the second substrate into engagement with the first contacts on the first substrate and wherein the first contact on the second substrate is disposed on a bridging member movable relative to the first contacts on the first substrate to produce the electrical engagement between the first contact on the second substrate and the first contacts on the first substrate and wherein the bridging member is constructed to dissipate any electrical charges accumulated on such dielectric member.
85. A method as set forth in claim 84 wherein the bridging member is formed from an electrically conductive layer and an electrically insulating layer on the electrically conductive layer and wherein holes are provided in the electrically conductive layer and the electrically insulating layer to facilitate the formation of the cavity in the second substrate.
86. A method as set forth in the electrically conductive layer wherein the electrically insulating layer is removed from the electrically conductive layer at isolated positions to facilitate the removal of electrostatic charges in the space between the contacts on the substrates and wherein bumps are disposed on the electrically insulating layer between the contact and the opposite ends of the cavity to maintain the electrical contact on the second substrate displaced from the electrical contacts on the first substrate until the creation of an electrical field between the contacts.