WO1993026050A1 - Two-level microbridge bolometer imaging array and method of making same - Google Patents
Two-level microbridge bolometer imaging array and method of making same Download PDFInfo
- Publication number
- WO1993026050A1 WO1993026050A1 PCT/US1992/004895 US9204895W WO9326050A1 WO 1993026050 A1 WO1993026050 A1 WO 1993026050A1 US 9204895 W US9204895 W US 9204895W WO 9326050 A1 WO9326050 A1 WO 9326050A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- silicon nitride
- glass
- array
- dielectric
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 17
- 239000006096 absorbing agent Substances 0.000 description 4
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69215241T DE69215241T2 (en) | 1992-06-11 | 1992-06-11 | IMAGING BOLOMETER MATRIX AT TWO LEVELS FROM MICROBRIDGES AND METHOD FOR THE PRODUCTION THEREOF. |
PCT/US1992/004895 WO1993026050A1 (en) | 1992-06-11 | 1992-06-11 | Two-level microbridge bolometer imaging array and method of making same |
CA002121042A CA2121042C (en) | 1992-06-11 | 1992-06-11 | Thermal sensor |
EP92914216A EP0645054B1 (en) | 1992-06-11 | 1992-06-11 | Two-level microbridge bolometer imaging array and method of making same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1992/004895 WO1993026050A1 (en) | 1992-06-11 | 1992-06-11 | Two-level microbridge bolometer imaging array and method of making same |
CA002121042A CA2121042C (en) | 1992-06-11 | 1992-06-11 | Thermal sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1993026050A1 true WO1993026050A1 (en) | 1993-12-23 |
Family
ID=25677180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1992/004895 WO1993026050A1 (en) | 1992-06-11 | 1992-06-11 | Two-level microbridge bolometer imaging array and method of making same |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO1993026050A1 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995014218A1 (en) * | 1993-11-17 | 1995-05-26 | Honeywell Inc. | Infrared radiation imaging array with compound sensors forming each pixel |
WO1996021248A1 (en) * | 1994-12-30 | 1996-07-11 | Honeywell Inc. | Low power infrared scene projector array and method of manufacture |
US5760398A (en) * | 1995-12-04 | 1998-06-02 | Lockheed Martin Ir Imaging Systems, Inc. | Infrared radiation detector having a reduced active area |
US5811815A (en) * | 1995-11-15 | 1998-09-22 | Lockheed-Martin Ir Imaging Systems, Inc. | Dual-band multi-level microbridge detector |
US6194722B1 (en) | 1997-03-28 | 2001-02-27 | Interuniversitair Micro-Elektronica Centrum, Imec, Vzw | Method of fabrication of an infrared radiation detector and infrared detector device |
US6249002B1 (en) | 1996-08-30 | 2001-06-19 | Lockheed-Martin Ir Imaging Systems, Inc. | Bolometric focal plane array |
US6515285B1 (en) | 1995-10-24 | 2003-02-04 | Lockheed-Martin Ir Imaging Systems, Inc. | Method and apparatus for compensating a radiation sensor for ambient temperature variations |
US6730909B2 (en) | 2000-05-01 | 2004-05-04 | Bae Systems, Inc. | Methods and apparatus for compensating a radiation sensor for temperature variations of the sensor |
US6791610B1 (en) | 1996-10-24 | 2004-09-14 | Lockheed Martin Ir Imaging Systems, Inc. | Uncooled focal plane array sensor |
US7176111B2 (en) | 1997-03-28 | 2007-02-13 | Interuniversitair Microelektronica Centrum (Imec) | Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof |
US7495220B2 (en) | 1995-10-24 | 2009-02-24 | Bae Systems Information And Electronics Systems Integration Inc. | Uncooled infrared sensor |
US8368022B2 (en) | 2007-09-10 | 2013-02-05 | Centre National De La Recherche Scientifique (Cnrs) | Bolometer with heat feedback |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990016082A1 (en) * | 1989-06-21 | 1990-12-27 | Hughes Aircraft Company | Radiation detector array using radiation sensitive bridges |
US5008541A (en) * | 1988-11-29 | 1991-04-16 | Commissariat A L'energie Atomique | Monolithic detection or infrared imaging structure and its production process |
-
1992
- 1992-06-11 WO PCT/US1992/004895 patent/WO1993026050A1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5008541A (en) * | 1988-11-29 | 1991-04-16 | Commissariat A L'energie Atomique | Monolithic detection or infrared imaging structure and its production process |
WO1990016082A1 (en) * | 1989-06-21 | 1990-12-27 | Hughes Aircraft Company | Radiation detector array using radiation sensitive bridges |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995014218A1 (en) * | 1993-11-17 | 1995-05-26 | Honeywell Inc. | Infrared radiation imaging array with compound sensors forming each pixel |
WO1996021248A1 (en) * | 1994-12-30 | 1996-07-11 | Honeywell Inc. | Low power infrared scene projector array and method of manufacture |
US5600148A (en) * | 1994-12-30 | 1997-02-04 | Honeywell Inc. | Low power infrared scene projector array and method of manufacture |
USRE37146E1 (en) | 1994-12-30 | 2001-04-24 | Honeywell International Inc. | Low power infrared scene projector array and method of manufacture |
US6515285B1 (en) | 1995-10-24 | 2003-02-04 | Lockheed-Martin Ir Imaging Systems, Inc. | Method and apparatus for compensating a radiation sensor for ambient temperature variations |
US7495220B2 (en) | 1995-10-24 | 2009-02-24 | Bae Systems Information And Electronics Systems Integration Inc. | Uncooled infrared sensor |
US5811815A (en) * | 1995-11-15 | 1998-09-22 | Lockheed-Martin Ir Imaging Systems, Inc. | Dual-band multi-level microbridge detector |
US6157404A (en) * | 1995-11-15 | 2000-12-05 | Lockheed-Martin Ir Imaging Systems, Inc. | Imaging system including an array of dual-band microbridge detectors |
US5760398A (en) * | 1995-12-04 | 1998-06-02 | Lockheed Martin Ir Imaging Systems, Inc. | Infrared radiation detector having a reduced active area |
US6249002B1 (en) | 1996-08-30 | 2001-06-19 | Lockheed-Martin Ir Imaging Systems, Inc. | Bolometric focal plane array |
US6791610B1 (en) | 1996-10-24 | 2004-09-14 | Lockheed Martin Ir Imaging Systems, Inc. | Uncooled focal plane array sensor |
US6884636B2 (en) | 1997-03-28 | 2005-04-26 | Interuniversitair Micro-Elektronica Centrum (Imec,Vzw) | Method of fabrication of an infrared radiation detector and infrared detector device |
US7075081B2 (en) | 1997-03-28 | 2006-07-11 | Interuniversitair Microelektronica Centrum (Imec Vzw) | Method of fabrication of an infrared radiation detector and infrared detector device |
US7176111B2 (en) | 1997-03-28 | 2007-02-13 | Interuniversitair Microelektronica Centrum (Imec) | Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof |
US7320896B2 (en) | 1997-03-28 | 2008-01-22 | Interuniversitair Microelektronica Centrum (Imec) | Infrared radiation detector |
US6194722B1 (en) | 1997-03-28 | 2001-02-27 | Interuniversitair Micro-Elektronica Centrum, Imec, Vzw | Method of fabrication of an infrared radiation detector and infrared detector device |
US6730909B2 (en) | 2000-05-01 | 2004-05-04 | Bae Systems, Inc. | Methods and apparatus for compensating a radiation sensor for temperature variations of the sensor |
US8368022B2 (en) | 2007-09-10 | 2013-02-05 | Centre National De La Recherche Scientifique (Cnrs) | Bolometer with heat feedback |
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