US9252154B2 - Non-volatile memory with silicided bit line contacts - Google Patents
Non-volatile memory with silicided bit line contacts Download PDFInfo
- Publication number
- US9252154B2 US9252154B2 US14/501,536 US201414501536A US9252154B2 US 9252154 B2 US9252154 B2 US 9252154B2 US 201414501536 A US201414501536 A US 201414501536A US 9252154 B2 US9252154 B2 US 9252154B2
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- bit line
- dielectric layer
- dielectric
- oxide
- layer
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- 238000000034 method Methods 0.000 claims abstract description 71
- 239000007943 implant Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 41
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 28
- 150000004767 nitrides Chemical class 0.000 claims abstract description 17
- 125000006850 spacer group Chemical group 0.000 claims description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000002019 doping agent Substances 0.000 claims description 13
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
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- 239000010941 cobalt Substances 0.000 claims description 3
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- 229910021334 nickel silicide Inorganic materials 0.000 claims description 2
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- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910021341 titanium silicide Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 31
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- 239000004065 semiconductor Substances 0.000 description 29
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 210000000746 body region Anatomy 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002784 hot electron Substances 0.000 description 4
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- -1 oxynitride Chemical compound 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 3
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- 239000012535 impurity Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910019044 CoSix Inorganic materials 0.000 description 1
- 206010010144 Completed suicide Diseases 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- AIOWANYIHSOXQY-UHFFFAOYSA-N cobalt silicon Chemical compound [Si].[Co] AIOWANYIHSOXQY-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
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US15/006,288 US9666591B2 (en) | 2013-01-30 | 2016-01-26 | Non-volatile memory with silicided bit line contacts |
US15/489,695 US10692877B2 (en) | 2013-01-30 | 2017-04-17 | Non-volatile memory with silicided bit line contacts |
US16/905,044 US11183509B2 (en) | 2013-01-30 | 2020-06-18 | Non-volatile memory with silicided bit line contacts |
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US13/753,676 US8866213B2 (en) | 2013-01-30 | 2013-01-30 | Non-Volatile memory with silicided bit line contacts |
US14/501,536 US9252154B2 (en) | 2013-01-30 | 2014-09-30 | Non-volatile memory with silicided bit line contacts |
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US13/753,676 Division US8866213B2 (en) | 2013-01-30 | 2013-01-30 | Non-Volatile memory with silicided bit line contacts |
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US15/006,288 Continuation US9666591B2 (en) | 2013-01-30 | 2016-01-26 | Non-volatile memory with silicided bit line contacts |
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Publication number | Priority date | Publication date | Assignee | Title |
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US20160211271A1 (en) * | 2013-01-30 | 2016-07-21 | Cypress Semiconductor Corporation | Non-Volatile Memory With Silicided Bit Line Contacts |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9111634B2 (en) * | 2012-07-13 | 2015-08-18 | Freescale Semiconductor, Inc. | Methods and structures for multiport memory devices |
KR20160132620A (en) * | 2015-05-11 | 2016-11-21 | 삼성전자주식회사 | Display data processing method and electronic device supporting the same |
US10901845B2 (en) * | 2018-04-16 | 2021-01-26 | Microsoft Technology Licensing, Llc | Erasure coding for a single-image memory |
US11809566B2 (en) * | 2020-10-02 | 2023-11-07 | Infineon Technologies LLC | Methods for fast, secure boot from nonvolatile memory device and corresponding systems and devices for the same |
US11901290B2 (en) * | 2021-01-14 | 2024-02-13 | Arm Limited | Bitcell architecture using buried metal |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4688078A (en) | 1982-09-30 | 1987-08-18 | Ning Hseih | Partially relaxable composite dielectric structure |
CN1421917A (en) | 2001-11-28 | 2003-06-04 | 旺宏电子股份有限公司 | Manufacture of non-volatile memory |
US20040043622A1 (en) | 2002-09-04 | 2004-03-04 | Chien-Wei Chen | Method for preventing hole and electron movement in NROM devices |
US6744105B1 (en) | 2003-03-05 | 2004-06-01 | Advanced Micro Devices, Inc. | Memory array having shallow bit line with silicide contact portion and method of formation |
US6808991B1 (en) | 2003-11-19 | 2004-10-26 | Macronix International Co., Ltd. | Method for forming twin bit cell flash memory |
US7098107B2 (en) | 2001-11-19 | 2006-08-29 | Saifun Semiconductor Ltd. | Protective layer in memory device and method therefor |
US7319613B2 (en) | 2004-02-10 | 2008-01-15 | Micron Technology, Inc. | NROM flash memory cell with integrated DRAM |
US20090004802A1 (en) | 2007-06-29 | 2009-01-01 | Moon Sig Joo | Method of fabricating non-volatile memory device having charge trapping layer |
US7602067B2 (en) | 2007-12-17 | 2009-10-13 | Spansion Llc | Hetero-structure variable silicon rich nitride for multiple level memory flash memory device |
US7629641B2 (en) | 2005-08-31 | 2009-12-08 | Micron Technology, Inc. | Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection |
US7973366B2 (en) | 2006-02-13 | 2011-07-05 | Macronix International Co., Ltd. | Dual-gate, sonos, non-volatile memory cells and arrays thereof |
US8263458B2 (en) | 2010-12-20 | 2012-09-11 | Spansion Llc | Process margin engineering in charge trapping field effect transistors |
US8349685B2 (en) | 2010-12-03 | 2013-01-08 | Spansion Llc | Dual spacer formation in flash memory |
US8462557B2 (en) | 2005-07-14 | 2013-06-11 | Micron Technology, Inc. | Methods of operating memory cell having asymmetric band-gap tunnel insulator using direct tunneling |
US8652907B2 (en) | 2011-03-24 | 2014-02-18 | Spansion Llc | Integrating transistors with different poly-silicon heights on the same die |
US8653581B2 (en) | 2008-12-22 | 2014-02-18 | Spansion Llc | HTO offset for long Leffective, better device performance |
US8705278B2 (en) | 2007-10-18 | 2014-04-22 | Macronix International Co., Ltd. | One-transistor cell semiconductor on insulator random access memory |
US20140209993A1 (en) | 2013-01-30 | 2014-07-31 | Spansion Llc | Non-Volatile Memory With Silicided Bit Line Contacts |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5168334A (en) * | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
KR960006976B1 (en) * | 1993-05-21 | 1996-05-25 | 현대전자산업주식회사 | Manufacturing method of field oxide of semiconductor device |
US5789305A (en) * | 1997-01-27 | 1998-08-04 | Chartered Semiconductor Manufacturing Ltd. | Locos with bird's beak suppression by a nitrogen implantation |
US5894059A (en) * | 1997-05-30 | 1999-04-13 | Chartered Semiconductor Manufacturing Company Ltd. | Dislocation free local oxidation of silicon with suppression of narrow space field oxide thinning effect |
US6071793A (en) * | 1998-02-02 | 2000-06-06 | Chartered Semiconductor Manufacturing Ltd. | Locos mask for suppression of narrow space field oxide thinning and oxide punch through effect |
US6417081B1 (en) * | 2000-05-16 | 2002-07-09 | Advanced Micro Devices, Inc. | Process for reduction of capacitance of a bitline for a non-volatile memory cell |
US7125763B1 (en) * | 2000-09-29 | 2006-10-24 | Spansion Llc | Silicided buried bitline process for a non-volatile memory cell |
US6642111B1 (en) * | 2002-07-09 | 2003-11-04 | Powerchip Semiconductor Corp. | Memory device structure and method of fabricating the same |
DE10258420B4 (en) * | 2002-12-13 | 2007-03-01 | Infineon Technologies Ag | Method for producing a semiconductor memory device with charge-trapping memory cells and buried bit lines |
US7648881B2 (en) * | 2003-01-10 | 2010-01-19 | Samsung Electronics Co., Ltd. | Non-volatile memory devices with charge storage insulators and methods of fabricating such devices |
US6885590B1 (en) * | 2003-01-14 | 2005-04-26 | Advanced Micro Devices, Inc. | Memory device having A P+ gate and thin bottom oxide and method of erasing same |
JP4009856B2 (en) * | 2003-06-30 | 2007-11-21 | セイコーエプソン株式会社 | Semiconductor memory device and manufacturing method thereof |
US6987048B1 (en) | 2003-08-06 | 2006-01-17 | Advanced Micro Devices, Inc. | Memory device having silicided bitlines and method of forming the same |
US7629640B2 (en) * | 2004-05-03 | 2009-12-08 | The Regents Of The University Of California | Two bit/four bit SONOS flash memory cell |
US20060131634A1 (en) * | 2004-12-21 | 2006-06-22 | Tzu-Hsuan Hsu | Non-volatile memory, non-volatile memory cell and operation thereof |
US8482052B2 (en) * | 2005-01-03 | 2013-07-09 | Macronix International Co., Ltd. | Silicon on insulator and thin film transistor bandgap engineered split gate memory |
US7948799B2 (en) * | 2006-05-23 | 2011-05-24 | Macronix International Co., Ltd. | Structure and method of sub-gate NAND memory with bandgap engineered SONOS devices |
US7755130B2 (en) * | 2007-05-10 | 2010-07-13 | Qimonda Ag | Minority carrier sink for a memory cell array comprising nonvolatile semiconductor memory cells |
JP5425378B2 (en) * | 2007-07-30 | 2014-02-26 | スパンション エルエルシー | Manufacturing method of semiconductor device |
US7948035B2 (en) * | 2008-02-20 | 2011-05-24 | Spansion Llc | Decoding system capable of charging protection for flash memory devices |
US8404549B2 (en) * | 2008-11-06 | 2013-03-26 | Spansion Llc | Fabricating method of mirror bit memory device having split ONO film with top oxide film formed by oxidation process |
US8860124B2 (en) * | 2009-01-15 | 2014-10-14 | Macronix International Co., Ltd. | Depletion-mode charge-trapping flash device |
JP2010212454A (en) | 2009-03-10 | 2010-09-24 | Panasonic Corp | Nonvolatile semiconductor memory device |
US8861273B2 (en) * | 2009-04-21 | 2014-10-14 | Macronix International Co., Ltd. | Bandgap engineered charge trapping memory in two-transistor nor architecture |
US20120139023A1 (en) * | 2010-12-03 | 2012-06-07 | Spansion Llc | Method and apparatus for nand memory with recessed source/drain region |
-
2013
- 2013-01-30 US US13/753,676 patent/US8866213B2/en active Active
-
2014
- 2014-01-30 EP EP14745500.0A patent/EP2951862A4/en active Pending
- 2014-01-30 WO PCT/US2014/013847 patent/WO2014120921A1/en active Application Filing
- 2014-09-30 US US14/501,536 patent/US9252154B2/en active Active
-
2016
- 2016-01-26 US US15/006,288 patent/US9666591B2/en active Active
-
2017
- 2017-04-17 US US15/489,695 patent/US10692877B2/en active Active
-
2020
- 2020-06-18 US US16/905,044 patent/US11183509B2/en active Active
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4688078A (en) | 1982-09-30 | 1987-08-18 | Ning Hseih | Partially relaxable composite dielectric structure |
US7098107B2 (en) | 2001-11-19 | 2006-08-29 | Saifun Semiconductor Ltd. | Protective layer in memory device and method therefor |
CN1421917A (en) | 2001-11-28 | 2003-06-04 | 旺宏电子股份有限公司 | Manufacture of non-volatile memory |
US20040043622A1 (en) | 2002-09-04 | 2004-03-04 | Chien-Wei Chen | Method for preventing hole and electron movement in NROM devices |
US6744105B1 (en) | 2003-03-05 | 2004-06-01 | Advanced Micro Devices, Inc. | Memory array having shallow bit line with silicide contact portion and method of formation |
US6808991B1 (en) | 2003-11-19 | 2004-10-26 | Macronix International Co., Ltd. | Method for forming twin bit cell flash memory |
US7319613B2 (en) | 2004-02-10 | 2008-01-15 | Micron Technology, Inc. | NROM flash memory cell with integrated DRAM |
US8462557B2 (en) | 2005-07-14 | 2013-06-11 | Micron Technology, Inc. | Methods of operating memory cell having asymmetric band-gap tunnel insulator using direct tunneling |
US7629641B2 (en) | 2005-08-31 | 2009-12-08 | Micron Technology, Inc. | Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection |
US7973366B2 (en) | 2006-02-13 | 2011-07-05 | Macronix International Co., Ltd. | Dual-gate, sonos, non-volatile memory cells and arrays thereof |
US20090004802A1 (en) | 2007-06-29 | 2009-01-01 | Moon Sig Joo | Method of fabricating non-volatile memory device having charge trapping layer |
US8705278B2 (en) | 2007-10-18 | 2014-04-22 | Macronix International Co., Ltd. | One-transistor cell semiconductor on insulator random access memory |
US7602067B2 (en) | 2007-12-17 | 2009-10-13 | Spansion Llc | Hetero-structure variable silicon rich nitride for multiple level memory flash memory device |
US8653581B2 (en) | 2008-12-22 | 2014-02-18 | Spansion Llc | HTO offset for long Leffective, better device performance |
US8349685B2 (en) | 2010-12-03 | 2013-01-08 | Spansion Llc | Dual spacer formation in flash memory |
US8263458B2 (en) | 2010-12-20 | 2012-09-11 | Spansion Llc | Process margin engineering in charge trapping field effect transistors |
US8652907B2 (en) | 2011-03-24 | 2014-02-18 | Spansion Llc | Integrating transistors with different poly-silicon heights on the same die |
US20140209993A1 (en) | 2013-01-30 | 2014-07-31 | Spansion Llc | Non-Volatile Memory With Silicided Bit Line Contacts |
US8866213B2 (en) * | 2013-01-30 | 2014-10-21 | Spansion Llc | Non-Volatile memory with silicided bit line contacts |
Non-Patent Citations (3)
Title |
---|
English language abstract of Chinese Patent Publication No. 1421917 A. |
International Search Report and Written Opinion of the International Searching Authority for International Application No. PCT/US2014/013847, mailed May 28, 2014. |
USPTO Notice of Allowance for U.S. Appl. No. 13/753,676 dated Jun. 4, 2014; 8 pages. |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160211271A1 (en) * | 2013-01-30 | 2016-07-21 | Cypress Semiconductor Corporation | Non-Volatile Memory With Silicided Bit Line Contacts |
US9666591B2 (en) * | 2013-01-30 | 2017-05-30 | Cypress Semiconductor Corporation | Non-volatile memory with silicided bit line contacts |
US10692877B2 (en) | 2013-01-30 | 2020-06-23 | Cypress Semiconductor Corporation | Non-volatile memory with silicided bit line contacts |
US11183509B2 (en) | 2013-01-30 | 2021-11-23 | Cypress Semiconductor Corporation | Non-volatile memory with silicided bit line contacts |
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US20170250192A1 (en) | 2017-08-31 |
EP2951862A1 (en) | 2015-12-09 |
US8866213B2 (en) | 2014-10-21 |
US11183509B2 (en) | 2021-11-23 |
US20160211271A1 (en) | 2016-07-21 |
US20140209993A1 (en) | 2014-07-31 |
US20200411537A1 (en) | 2020-12-31 |
US20150017795A1 (en) | 2015-01-15 |
US9666591B2 (en) | 2017-05-30 |
WO2014120921A1 (en) | 2014-08-07 |
EP2951862A4 (en) | 2017-03-15 |
US10692877B2 (en) | 2020-06-23 |
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