US8323995B2 - Diodes, and methods of forming diodes - Google Patents
Diodes, and methods of forming diodes Download PDFInfo
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- US8323995B2 US8323995B2 US13/094,642 US201113094642A US8323995B2 US 8323995 B2 US8323995 B2 US 8323995B2 US 201113094642 A US201113094642 A US 201113094642A US 8323995 B2 US8323995 B2 US 8323995B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/91—Diode arrays, e.g. diode read-only memory array
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/902—Capping layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/983—Zener diodes
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/094,642 US8323995B2 (en) | 2008-05-28 | 2011-04-26 | Diodes, and methods of forming diodes |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/128,334 US7811840B2 (en) | 2008-05-28 | 2008-05-28 | Diodes, and methods of forming diodes |
US12/875,007 US7951619B2 (en) | 2008-05-28 | 2010-09-02 | Diodes, and methods of forming diodes |
US13/094,642 US8323995B2 (en) | 2008-05-28 | 2011-04-26 | Diodes, and methods of forming diodes |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/875,007 Continuation US7951619B2 (en) | 2008-05-28 | 2010-09-02 | Diodes, and methods of forming diodes |
Publications (2)
Publication Number | Publication Date |
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US20110201200A1 US20110201200A1 (en) | 2011-08-18 |
US8323995B2 true US8323995B2 (en) | 2012-12-04 |
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Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
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US12/128,334 Active 2029-02-27 US7811840B2 (en) | 2008-05-28 | 2008-05-28 | Diodes, and methods of forming diodes |
US12/875,007 Active US7951619B2 (en) | 2008-05-28 | 2010-09-02 | Diodes, and methods of forming diodes |
US13/094,642 Active 2028-07-08 US8323995B2 (en) | 2008-05-28 | 2011-04-26 | Diodes, and methods of forming diodes |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
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US12/128,334 Active 2029-02-27 US7811840B2 (en) | 2008-05-28 | 2008-05-28 | Diodes, and methods of forming diodes |
US12/875,007 Active US7951619B2 (en) | 2008-05-28 | 2010-09-02 | Diodes, and methods of forming diodes |
Country Status (3)
Country | Link |
---|---|
US (3) | US7811840B2 (en) |
TW (1) | TWI384559B (en) |
WO (1) | WO2009154886A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI422042B (en) * | 2010-11-26 | 2014-01-01 | Univ Nat Chiao Tung | Diode device and the fabrication method thereof |
US9887135B1 (en) * | 2017-04-28 | 2018-02-06 | Globalfoundries Inc. | Methods for providing variable feature widths in a self-aligned spacer-mask patterning process |
Citations (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3972059A (en) | 1973-12-28 | 1976-07-27 | International Business Machines Corporation | Dielectric diode, fabrication thereof, and charge store memory therewith |
JPS58178539A (en) | 1982-04-14 | 1983-10-19 | Nec Corp | Semiconducor device |
US4968389A (en) | 1985-02-06 | 1990-11-06 | Fujitsu Limited | Method of forming a composite film over the surface of aluminum materials |
JPH08306988A (en) | 1995-04-27 | 1996-11-22 | Seiko Epson Corp | Insulator diode device |
US5866301A (en) | 1997-04-08 | 1999-02-02 | Citizen Watch Co., Ltd. | Method of manufacturing thin film diode |
US6159559A (en) | 1997-07-07 | 2000-12-12 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) |
US6225203B1 (en) | 1999-05-03 | 2001-05-01 | Taiwan Semiconductor Manufacturing Company | PE-SiN spacer profile for C2 SAC isolation window |
US20020094388A1 (en) | 1997-07-07 | 2002-07-18 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications |
US6816355B2 (en) | 2001-09-13 | 2004-11-09 | Seiko Epson Corporation | Capacitor, semiconductor device, electro-optic device, method of manufacturing capacitor, method of manufacturing semiconductor device, and electronic apparatus |
US20050115946A1 (en) | 2003-12-02 | 2005-06-02 | Shim Kyu H. | Radical assisted oxidation apparatus |
US20050215070A1 (en) | 2002-05-24 | 2005-09-29 | Hikaru Kobayashi | Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device |
US20060044239A1 (en) | 2004-09-01 | 2006-03-02 | Kimitaka Kamijo | Electro-optical device and electronic apparatus |
WO2006105281A2 (en) | 2005-03-30 | 2006-10-05 | Moxtronics, Inc. | Metal oxide semiconductor films, structures and methods |
US20060281330A1 (en) | 2005-06-14 | 2006-12-14 | Micron Technology, Inc. | Iridium / zirconium oxide structure |
US20060284246A1 (en) | 2002-07-08 | 2006-12-21 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US7205247B2 (en) | 2003-09-30 | 2007-04-17 | Aviza Technology, Inc. | Atomic layer deposition of hafnium-based high-k dielectric |
US20070120110A1 (en) | 2001-05-21 | 2007-05-31 | Estes Michael J | Thin-Film Transistors Based on Tunneling Structures and Applications |
JP2007142196A (en) | 2005-11-18 | 2007-06-07 | Idemitsu Kosan Co Ltd | Semiconductor thin film, manufacturing method thereof, and thin-film transistor |
US20070181931A1 (en) | 2005-01-05 | 2007-08-09 | Micron Technology, Inc. | Hafnium tantalum oxide dielectrics |
US20070184576A1 (en) | 2005-11-29 | 2007-08-09 | Oregon State University | Solution deposition of inorganic materials and electronic devices made comprising the inorganic materials |
US20070190744A1 (en) | 2002-10-31 | 2007-08-16 | Atsushi Hiraiwa | Method for fabricating semiconductor devices |
US20070254141A1 (en) | 2004-10-18 | 2007-11-01 | The Regents Of The University Of California | Biologically inspired synthesis of thin films and materials |
WO2007126679A2 (en) | 2006-03-31 | 2007-11-08 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
CN101070612A (en) | 2007-03-21 | 2007-11-14 | 山东大学 | Method for preparing tin-oxide mono-crystal film |
US20070269683A1 (en) | 2005-11-30 | 2007-11-22 | The Trustees Of The University Of Pennyslvani | Non-volatile resistance-switching oxide thin film devices |
US20080073736A1 (en) | 2006-09-26 | 2008-03-27 | Dongbu Hitek Co., Ltd. | Image sensor and method of fabricating the same |
US20080079075A1 (en) | 2006-09-30 | 2008-04-03 | Samsung Electronics Co., Ltd. | Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof |
US20080087890A1 (en) | 2006-10-16 | 2008-04-17 | Micron Technology, Inc. | Methods to form dielectric structures in semiconductor devices and resulting devices |
US20080096363A1 (en) | 2005-01-07 | 2008-04-24 | Shrinivas Govindarajan | High Dielectric Constant Materials |
US20080099829A1 (en) | 2006-10-30 | 2008-05-01 | Micron Technology, Inc. | Mosfet devices and systems with nitrided gate insulators and methods for forming |
US20080101121A1 (en) | 2006-10-27 | 2008-05-01 | Franz Kreupl | Modifiable gate stack memory element |
WO2009042540A2 (en) | 2007-09-24 | 2009-04-02 | Honeywell International Inc. | Electrode |
-
2008
- 2008-05-28 US US12/128,334 patent/US7811840B2/en active Active
-
2009
- 2009-05-01 WO PCT/US2009/042540 patent/WO2009154886A2/en active Application Filing
- 2009-05-14 TW TW098116053A patent/TWI384559B/en active
-
2010
- 2010-09-02 US US12/875,007 patent/US7951619B2/en active Active
-
2011
- 2011-04-26 US US13/094,642 patent/US8323995B2/en active Active
Patent Citations (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3972059A (en) | 1973-12-28 | 1976-07-27 | International Business Machines Corporation | Dielectric diode, fabrication thereof, and charge store memory therewith |
JPS58178539A (en) | 1982-04-14 | 1983-10-19 | Nec Corp | Semiconducor device |
US4968389A (en) | 1985-02-06 | 1990-11-06 | Fujitsu Limited | Method of forming a composite film over the surface of aluminum materials |
JPH08306988A (en) | 1995-04-27 | 1996-11-22 | Seiko Epson Corp | Insulator diode device |
US5866301A (en) | 1997-04-08 | 1999-02-02 | Citizen Watch Co., Ltd. | Method of manufacturing thin film diode |
US6159559A (en) | 1997-07-07 | 2000-12-12 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) |
US20020094388A1 (en) | 1997-07-07 | 2002-07-18 | The Penn State Research Foundation | Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications |
US6225203B1 (en) | 1999-05-03 | 2001-05-01 | Taiwan Semiconductor Manufacturing Company | PE-SiN spacer profile for C2 SAC isolation window |
US20070120110A1 (en) | 2001-05-21 | 2007-05-31 | Estes Michael J | Thin-Film Transistors Based on Tunneling Structures and Applications |
US6816355B2 (en) | 2001-09-13 | 2004-11-09 | Seiko Epson Corporation | Capacitor, semiconductor device, electro-optic device, method of manufacturing capacitor, method of manufacturing semiconductor device, and electronic apparatus |
US20050215070A1 (en) | 2002-05-24 | 2005-09-29 | Hikaru Kobayashi | Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device |
US20060284246A1 (en) | 2002-07-08 | 2006-12-21 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US20070190744A1 (en) | 2002-10-31 | 2007-08-16 | Atsushi Hiraiwa | Method for fabricating semiconductor devices |
US7205247B2 (en) | 2003-09-30 | 2007-04-17 | Aviza Technology, Inc. | Atomic layer deposition of hafnium-based high-k dielectric |
US20050115946A1 (en) | 2003-12-02 | 2005-06-02 | Shim Kyu H. | Radical assisted oxidation apparatus |
US20060044239A1 (en) | 2004-09-01 | 2006-03-02 | Kimitaka Kamijo | Electro-optical device and electronic apparatus |
US20070254141A1 (en) | 2004-10-18 | 2007-11-01 | The Regents Of The University Of California | Biologically inspired synthesis of thin films and materials |
US20070181931A1 (en) | 2005-01-05 | 2007-08-09 | Micron Technology, Inc. | Hafnium tantalum oxide dielectrics |
US20080096363A1 (en) | 2005-01-07 | 2008-04-24 | Shrinivas Govindarajan | High Dielectric Constant Materials |
WO2006105281A2 (en) | 2005-03-30 | 2006-10-05 | Moxtronics, Inc. | Metal oxide semiconductor films, structures and methods |
US20060281330A1 (en) | 2005-06-14 | 2006-12-14 | Micron Technology, Inc. | Iridium / zirconium oxide structure |
JP2007142196A (en) | 2005-11-18 | 2007-06-07 | Idemitsu Kosan Co Ltd | Semiconductor thin film, manufacturing method thereof, and thin-film transistor |
US20070184576A1 (en) | 2005-11-29 | 2007-08-09 | Oregon State University | Solution deposition of inorganic materials and electronic devices made comprising the inorganic materials |
US20070269683A1 (en) | 2005-11-30 | 2007-11-22 | The Trustees Of The University Of Pennyslvani | Non-volatile resistance-switching oxide thin film devices |
WO2007126679A2 (en) | 2006-03-31 | 2007-11-08 | Sandisk 3D Llc | Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride |
US20080073736A1 (en) | 2006-09-26 | 2008-03-27 | Dongbu Hitek Co., Ltd. | Image sensor and method of fabricating the same |
US20080079075A1 (en) | 2006-09-30 | 2008-04-03 | Samsung Electronics Co., Ltd. | Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof |
US20080087890A1 (en) | 2006-10-16 | 2008-04-17 | Micron Technology, Inc. | Methods to form dielectric structures in semiconductor devices and resulting devices |
US20080101121A1 (en) | 2006-10-27 | 2008-05-01 | Franz Kreupl | Modifiable gate stack memory element |
US20080099829A1 (en) | 2006-10-30 | 2008-05-01 | Micron Technology, Inc. | Mosfet devices and systems with nitrided gate insulators and methods for forming |
CN101070612A (en) | 2007-03-21 | 2007-11-14 | 山东大学 | Method for preparing tin-oxide mono-crystal film |
WO2009042540A2 (en) | 2007-09-24 | 2009-04-02 | Honeywell International Inc. | Electrode |
Non-Patent Citations (7)
Also Published As
Publication number | Publication date |
---|---|
US7811840B2 (en) | 2010-10-12 |
WO2009154886A2 (en) | 2009-12-23 |
TWI384559B (en) | 2013-02-01 |
US20100330770A1 (en) | 2010-12-30 |
US20110201200A1 (en) | 2011-08-18 |
US20090294967A1 (en) | 2009-12-03 |
US7951619B2 (en) | 2011-05-31 |
TW201003790A (en) | 2010-01-16 |
WO2009154886A3 (en) | 2010-02-18 |
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