US7906274B2 - Method of creating a template employing a lift-off process - Google Patents
Method of creating a template employing a lift-off process Download PDFInfo
- Publication number
- US7906274B2 US7906274B2 US11/943,907 US94390707A US7906274B2 US 7906274 B2 US7906274 B2 US 7906274B2 US 94390707 A US94390707 A US 94390707A US 7906274 B2 US7906274 B2 US 7906274B2
- Authority
- US
- United States
- Prior art keywords
- layered structure
- layer
- conducting layer
- recited
- hard mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Definitions
- Nano-fabrication involves the fabrication of very small structures, e.g., having features on the order of nanometers or smaller.
- One area in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits.
- nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing increased reduction of the minimum feature dimension of the structures formed.
- Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems and the like.
- An exemplary nano-fabrication technique is commonly referred to as imprint lithography.
- Exemplary imprint lithography processes are described in detail in numerous publications, such as United States patent application publication 2004/0065976 filed as U.S. patent application Ser. No. 10/264,960, entitled “Method and a Mold to Arrange Features on a Substrate to Replicate Features having Minimal Dimensional Variability”; United States patent application publication 2004/0065252 filed as U.S. patent application Ser. No. 10/264,926, entitled “Method of Forming a Layer on a Substrate to Facilitate Fabrication of Metrology Standards”; and U.S. Pat. No. 6,936,194, entitled “Functional Patterning Material for Imprint Lithography Processes,” all of which are assigned to the assignee of the present invention.
- the imprint lithography technique disclosed in each of the aforementioned United States patent application publications and United States patent includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate.
- the substrate may be positioned upon a stage to obtain a desired position to facilitate patterning thereof.
- a mold is employed spaced-apart from the substrate with a formable liquid present between the mold and the substrate.
- the liquid is solidified to form a patterned layer that has a pattern recorded therein that is conforming to a shape of the surface of the mold in contact with the liquid.
- the mold is then separated from the patterned layer such that the mold and the substrate are spaced-apart.
- the substrate and the patterned layer are then subjected to processes to transfer, into the substrate, a relief image that corresponds to the pattern in the patterned layer.
- FIG. 1 is a simplified side view of a lithographic system having a mold spaced-apart from a multi-layered structure
- FIG. 2 is a simplified side view of the multi-layered structure shown in FIG. 1 comprising a substrate having a conducting layer positioned thereon;
- FIG. 3 is a simplified side view of the multi-layered structure shown in FIG. 2 having a patterning layer positioned thereon;
- FIG. 4 is a simplified side view of the multi-layered structure shown in FIG. 3 have a hard mask material deposited thereon;
- FIG. 5 is a simplified side view of the multi-layered structure shown in FIG. 4 subjected to a lift-off process
- FIG. 6 is a simplified side view of the multi-layered structure shown in FIG. 5 having a resist pattern layer positioned thereon;
- FIG. 7 is a simplified side view of the multi-layered structure shown in FIG. 6 having a pattern of the hard mask material and the resist pattern layer transferred into the conducting layer and the substrate;
- FIG. 8 is a simplified side view of the multi-layered structure shown in FIG. 7 having the hard mask material and the resist pattern layer substantially removed;
- FIG. 9 is a simplified side view of the multi-layered structure shown in FIG. 8 having an adhesion layer deposited thereon;
- FIG. 10 is a simplified side view of the multi-layered structure shown in FIG. 9 having an imaging layer positioned thereon;
- FIG. 11 is a simplified side view of the multi-layered structure shown in FIG. 10 having a pattern of the imaging layer transferred into the adhesion layer;
- FIG. 12 is a simplified side view of the multi-layered structure shown in FIG. 11 having a pattern of the imaging layer transferred into the substrate;
- FIG. 13 is a simplified side view of the multi-layered structure shown in FIG. 12 having the conducting layer, the adhesion layer, and the imaging layer substantially removed.
- Substrate 12 may be coupled to a substrate chuck 14 , described further below.
- Substrate 12 and substrate chuck 14 may be supported upon a stage 16 . Further, stage 16 , substrate 12 , and substrate chuck 14 may be positioned on a base (not shown). Stage 16 may provide motion about the x and y axes.
- a template 18 Spaced-apart from substrate 12 is a template 18 having a mesa 20 extending therefrom towards substrate 12 with a patterning surface 22 thereon.
- mesa 20 may be referred to as a mold 20 .
- Mesa 20 may also be referred to as a nanoimprint mold 20 .
- template 18 may be substantially absent of mold 20 .
- Template 18 and/or mold 20 may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, and hardened sapphire.
- patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 and protrusions 26 .
- patterning surface 22 may be substantially smooth and/or planar. Patterning surface 22 may define an original pattern that forms the basis of a pattern to be formed on substrate 12 .
- Template 18 may be coupled to a template chuck 28 , template chuck 28 being any chuck including, but not limited to, vacuum, pin-type, groove-type, or electromagnetic, as described in U.S. Pat. No. 6,873,087 entitled “High-Precision Orientation Alignment and Gap Control Stages for Imprint Lithography Processes” which is incorporated herein by reference. Further, template chuck 28 may be coupled to an imprint head 30 to facilitate movement of template 18 , and therefore, mold 20 .
- System 10 further comprises a fluid dispense system 32 .
- Fluid dispense system 32 may be in fluid communication with substrate 12 so as to deposit polymeric material 34 thereon.
- System 10 may comprise any number of fluid dispensers, and fluid dispense system 32 may comprise a plurality of dispensing units therein.
- Polymeric material 34 may be positioned upon substrate 12 using any known technique, e.g., drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and the like.
- CVD chemical vapor deposition
- PVD physical vapor deposition
- thin film deposition thick film deposition
- thick film deposition and the like.
- polymeric material 34 is disposed upon substrate 12 before the desired volume is defined between mold 20 and substrate 12 . However, polymeric material 34 may fill the volume after the desired volume has been obtained.
- System 10 further comprises a source 38 of energy 40 coupled to direct energy 40 along a path 42 .
- Imprint head 30 and stage 16 are configured to arrange mold 20 and substrate 12 , respectively, to be in superimposition and disposed in path 42 .
- Either imprint head 30 , stage 16 , or both vary a distance between mold 20 and substrate 12 to define a desired volume therebetween that is filled by polymeric material 34 .
- source 38 produces energy 40 , e.g., broadband ultraviolet radiation that causes polymeric material 34 to solidify and/or cross-link conforming to the shape of a surface 44 of substrate 12 and patterning surface 22 .
- Source 38 may produce ultraviolet energy. However, other energy sources may be employed, such as thermal, electromagnetic, visible light and the like.
- System 10 may be regulated by a processor 54 that is in data communication with stage 16 , imprint head 30 , fluid dispense system 32 , and source 38 , operating on a computer readable program stored in memory 56 .
- substrate 12 is shown having a conducting layer 60 positioned thereon, defining a multi-layered structure 62 .
- substrate 12 may be formed from fused silica; however, substrate 12 may be formed from any material.
- Substrate 12 may have a high quality optical surface with low roughness and defects and further a scratch/dig of 20/10 may be preferred.
- Substrate 12 may have a thickness t 1 , with thickness t 1 being substantially uniform over substrate 12 . In an embodiment, thickness t 1 may be less than 1 mm to facilitate flexing/deformation of substrate 12 during processing thereof.
- Conducting layer 60 may be formed using any known techniques, e.g., drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), and the like.
- Conducting layer 60 may have a thickness t 2 to facilitate etch transfer through the same and be substantially uniform over substrate 12 .
- thickness t 2 may be less than 10 nm and have less than 5 nm roughness.
- thickness t 2 may have a magnitude such that conducting layer 60 may be electroconductive, and thus, dissipate charge during e-beam lithographic exposure.
- a sheet resistance of less than 5 kilo-ohms/square is utilized.
- conducting layer 60 may be etched substantially anisotropically in a suitable dry etch process. It may be further desired that conducting layer 60 be substantially stable after deposition and not prone to chemical or physical transformations, e.g., chemical oxidization or physical de-wetting. It may be further desired that conducting layer 60 is compatible with common cleaning processes, e.g., acid and/or base solution. It may be further desired that conducting layer 60 may be substantially resistant to interfusion or intermixing with substrate 12 or materials positioned thereon, described further below. It may be further desired that conducing layer 60 adhere to substrate 12 and any materials positioned thereon, described further below.
- Conducting layer 60 may be formed from materials including, but not limited to, tantalum, tungsten, molybdenum, titanium, tantalum nitride, tungsten nitride, titanium nitride, molybdenum nitride, tantalum silicide, tungsten silicide, titanium silicide, molybdenum silicide, tantalum silicon nitride, tungsten silicon nitride, titanium silicon nitride, and molybdenum silicon nitride.
- conducting layer 60 may be formed from alloy films of the above materials by such methods including, but not limited to, sputtering from an alloy target, reactive sputtering, reactive co-sputtering, and vacuum evaporation techniques.
- conducting layer 60 may be formed from tantalum, and thickness t 2 may have a magnitude of 5 nm.
- conducting layer 60 may be prone to form an undesirable oxide and thus, a capping layer (not shown) may be deposited upon conducting layer 60 .
- the capping layer may be formed from silicon and other materials that may form oxides that may be easily etched.
- a patterning layer 64 may be positioned on conducting layer 60 such that conducting layer 60 is positioned between substrate 12 and patterning layer 64 , defining a multi-layered structure 162 .
- Patterning layer 64 may have a plurality of protrusions 66 and recessions 68 , with recessions 68 exposing portions 70 of conducting layer 60 . Further, protrusions 66 may have a top surface 72 and sidewalls 74 .
- Patterning layer 64 may have a thickness t 3 with a magnitude of 45 nm being preferred; however, any thickness may be employed depending on the specific application and desired patterning resolution.
- Patterning layer 64 may be formed using e-beam lithography.
- Patterning layer 64 may be a positive-tone electron resist such as ZEP520A available from Nippon Zeon Corporation or 950 k MW poly methyl methacrylate (PMMA) electron beam resist.
- patterning layer 64 may be exposed in an electron beam lithography tool such as a Vistec VB6HR operating at 100 kV, 2 nm beam step grid, and 0.1-1 nA beam current.
- a possible exposure pattern may be patterning layer 64 comprising 25 nm diameter dots and on a pitch of 50 nm.
- One method for developing the ZEP520A resist is immersion in amyl acetate at a temperature of ⁇ 10 to 10 degrees Celsius for 5 to 120 seconds.
- One method for developing the PMMA is immersion in a mixture of isopropyl alcohol and water at a temperature of ⁇ 10 to 10 degrees Celsius for 5 to 120 seconds. It may be possible to employ ultrasonic agitation at 30-50 kHz during development. Further, an anisotropic descum etch maybe employed to remove resist residues from the exposed surfaces of conducting layer 60 .
- a lift-off technique may be employed on multi-layered structure 162 , shown in FIG. 3 . More specifically, etch-enhanced lift-off processing may be employed, as described in U.S. patent application Ser. No. 11/856,862, entitled “Etch-Enhanced Technique for Lift-Off Patterning”, which is incorporated herein by reference.
- a hard mask material 76 may be positioned on multi-layered structure 162 , shown in FIG. 3 , defining multi-layered structure 262 .
- Hard mask material 76 a may be deposited directly on portions 70 of conducting layer 60 , shown in FIG. 3 .
- Hard mask material 76 b may be deposited on surface 72 of patterning layer 64 , shown in FIG. 3 .
- hard mask material 76 may be positioned on multi-layered structure 162 , shown in FIG. 3 , employing a directional deposition process, such as vacuum evaporation.
- Hard mask material 76 may have a thickness t 4 of approximately 10 nm and less than 5 nm roughness. Hard mask material 76 may provide selective etching of conducting layer 60 and substrate 12 without significant etching or erosion of hard mask material 76 . It may be further desired that hard mask material 76 may be removed from multi-layered structure 262 with high selectively. It may be further desired that hard mask material 76 should adhere to portions 70 of conducting layer 60 . It may be further desired that hard mask material 76 be substantially stable after deposition and not prone to chemical or physical transformations, e.g., chemical oxidization or physical de-wetting. It may be further desired that hard mask material 76 is compatible with common cleaning processes, e.g., acid and/or base solution.
- Hard mask material 76 may be formed from materials including, but not limited to, chromium, nickel, platinum, or alloys thereof. Chromium may be readily evaporated, is well-suited for isotropic etching, and is a well-known etch mask material for fused silica (substrate 12 ).
- hard mask material 76 may be positioned upon sidewalls 74 of patterned layer 64 , which may be undesirable.
- multi-layered structure 262 may be subjected to an isotropic dry etch.
- One isotropic dry etch comprises reactive ion etch processing at 30 volts DC (Direct Current) bias with a gas flow rate of 60 sccm Cl 2 and 20 sccm 0 2 , at a pressure of 90 mT.
- one process comprises immersing multi-layered structure 262 , shown in FIG. 4 , in a solvent that is known to rapidly dissolve patterning layer 64 , defining multi-layered structure 362 .
- a solvent for PMMA is dichloromethane.
- One solvent for ZEP520A is dimethylacetamide.
- the lift-off process may be performed in an ultrasonic bath at 30-50 kHz to facilitate the lift-off process.
- Multi-layered structure 362 may be subsequently rinsed with isopropanol.
- a resist pattern layer 78 may be positioned on multi-layered structure 362 , shown in FIG. 5 , defining a multi-layered structure 462 .
- Resist pattern layer 78 defines a region 80 of multi-layered structure 462 , region 80 including hard mask material 76 a and exposed portions 82 of conducting layer 60 .
- Resist pattern layer 78 may be formed using optical lithography or any other lithography process.
- multi-layered structure 462 may be subjected to an etching process to transfer the features thereof into substrate 12 , defining multi-layered structure 562 .
- the pattern of resist pattern layer 78 and hard mask material 76 a may be transferred into substrate 12 , and thus exposed portions 82 of conducting layer 60 , shown in FIG. 6 , and portions of substrate 12 in superimposition therewith may be removed.
- the etching process may be a dry etch including both single step and multi-step process.
- fluorine containing etch chemistries may be employed.
- conducting layer 60 may be etched with a high selectivity to hard mask material 76 a.
- the etching of conducting layer 60 may be monitored in-situ by measuring a reflectance of exposed portions 82 of conducting layer 60 during etching. This measurement may be performed by focusing a source of light (not shown) onto exposed portions 82 and monitoring light reflected therefrom with a detector (not shown).
- the reflectance of exposed portions 82 of conducting layer 60 may vary as the thickness t 2 of conducting layer 60 , shown in FIG. 2 , may be reduced by etching thereof.
- the measured reflectance of exposed portions 82 of conducting layer 60 may exhibit an inflection at a time at which exposed portions 82 of conducting layer 60 may be substantially removed from multi-layered structure 462 , shown in FIG. 6 , and thus, indicating that the etching process may be removing the now-exposed substrate 12 .
- An in-situ measurement of this inflection time may facilitate precise control of the etch depth into substrate 12 .
- hard mask material 76 a and resist pattern layer 78 may be removed, defining multi-layered structure 662 and features 84 .
- a process for removing resist pattern layer 78 , shown in FIG. 7 is immersing multi-layered structure 562 , shown in FIG. 7 , in a hot piranha solution (3 parts H 2 SO 4 and 1 part H 2 O 2 ) for 5 minutes or more.
- one material for hard mask material 76 is chromium, and thus, a method of removing chromium is immersing multi-layered structure 562 , shown in FIG. 7 , in an aqueous solution comprising ceric ammonium nitrate.
- a mesa may be defined on multi-layered structure 662 , shown in FIG. 8 .
- an adhesion layer 86 may be positioned on multi-layered structure 662 , shown in FIG. 8 , defining a multi-layered structure 762 .
- adhesion layer 86 may be formed from Cr and may be deposited by methods including, but not limited to, sputtering and evaporation. Adhesion layer 86 may have at thickness t 5 having a magnitude of 10-50 nm.
- an imaging layer 88 may be positioned on multi-layered structure 762 , shown in FIG. 9 , defining a multi-layered structure 862 . More specifically, imaging layer 88 may be positioned on a region 90 of multi-layered structure 862 , with region 90 being in superimposition with features 84 , shown in FIG. 8 . Imaging layer 88 may be formed with optical lithography.
- multi-layered structure 862 may be subjected to an etching process to transfer the pattern of imaging layer 88 into adhesion layer 86 , defining multi-layered structure 962 , exposing portions 87 of conducting layer 60 .
- one material for adhesion layer 86 is chromium, and thus, one method for etching chromium is by is a wet etch process that comprises immersing multi-layered structure 862 , shown in FIG. 10 , in an aqueous solution comprising ceric ammonium nitrate.
- multi-layered structure 962 may be subjected to an etching process to transfer the pattern of imaging layer 88 and adhesion layer 86 into substrate 12 , defining multi-layered structure 1062 .
- exposed portions 87 of conducting layer 60 shown in FIG. 11
- portions of substrate 12 in superimposition therewith may be removed.
- One process for etching conducting layer 60 is a dry etch to substantially remove exposed portions of conducting layer 60 .
- One process for etching substrate 12 is a wet etch in an aqueous buffered HF acid solution. However, a wet etch of substrate 12 may result in undercut of substrate 12 under adhesion layer 86 and resist layer 88 .
- substrate 12 may be etched approximately 15 microns and subsequently rinsed thoroughly in deionized water.
- imaging layer 88 , adhesion layer 86 , and conducting layer 60 may be removed, defining multi-layered structure 1162 .
- Conducting layer 60 may be removed from substrate 12 with a process that is substantially selective.
- conducting layer 60 may be removed employing noble gas halides, such as XeF 2 , XeF 4 , XeF 6 , KrF 2 , KrF 4 , and KrF 6 , as described in U.S. Pat. No. 4,190,488 entitled “Etching Method Using Noble Gas Halides” which is incorporated herein.
- polyatomic halogen fluorides may be employed, as described in U.S. Pat.
- XeF 2 xenon difluroide
- XeF 2 xenon difluroide
- it may be desired to have conducting layer 60 remain on substrate 12 .
Abstract
Description
Claims (25)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/943,907 US7906274B2 (en) | 2007-11-21 | 2007-11-21 | Method of creating a template employing a lift-off process |
JP2010534938A JP2011505066A (en) | 2007-11-21 | 2008-11-10 | Method for generating a template using a lift-off process |
KR1020107009469A KR20100097100A (en) | 2007-11-21 | 2008-11-10 | Method of creating a template employing a lift-off process |
PCT/US2008/012637 WO2009067149A1 (en) | 2007-11-21 | 2008-11-10 | Method of creating a template employing a lift-off process |
TW097144488A TW200933699A (en) | 2007-11-21 | 2008-11-18 | Method of creating a template employing a lift-off process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/943,907 US7906274B2 (en) | 2007-11-21 | 2007-11-21 | Method of creating a template employing a lift-off process |
Publications (2)
Publication Number | Publication Date |
---|---|
US20090130598A1 US20090130598A1 (en) | 2009-05-21 |
US7906274B2 true US7906274B2 (en) | 2011-03-15 |
Family
ID=40642344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/943,907 Expired - Fee Related US7906274B2 (en) | 2007-11-21 | 2007-11-21 | Method of creating a template employing a lift-off process |
Country Status (5)
Country | Link |
---|---|
US (1) | US7906274B2 (en) |
JP (1) | JP2011505066A (en) |
KR (1) | KR20100097100A (en) |
TW (1) | TW200933699A (en) |
WO (1) | WO2009067149A1 (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080160129A1 (en) | 2006-05-11 | 2008-07-03 | Molecular Imprints, Inc. | Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template |
US7906274B2 (en) | 2007-11-21 | 2011-03-15 | Molecular Imprints, Inc. | Method of creating a template employing a lift-off process |
US20090148619A1 (en) * | 2007-12-05 | 2009-06-11 | Molecular Imprints, Inc. | Controlling Thickness of Residual Layer |
JP5398163B2 (en) * | 2008-04-04 | 2014-01-29 | 昭和電工株式会社 | Magnetic recording medium, method for manufacturing the same, and magnetic recording / reproducing apparatus |
US20100015270A1 (en) * | 2008-07-15 | 2010-01-21 | Molecular Imprints, Inc. | Inner cavity system for nano-imprint lithography |
US20100095862A1 (en) * | 2008-10-22 | 2010-04-22 | Molecular Imprints, Inc. | Double Sidewall Angle Nano-Imprint Template |
US8877073B2 (en) * | 2008-10-27 | 2014-11-04 | Canon Nanotechnologies, Inc. | Imprint lithography template |
US9122148B2 (en) * | 2008-11-03 | 2015-09-01 | Canon Nanotechnologies, Inc. | Master template replication |
US8529778B2 (en) * | 2008-11-13 | 2013-09-10 | Molecular Imprints, Inc. | Large area patterning of nano-sized shapes |
JP2011215242A (en) * | 2010-03-31 | 2011-10-27 | Hoya Corp | Method for forming resist pattern and method for manufacturing mold |
JP5123349B2 (en) * | 2010-04-19 | 2013-01-23 | Hoya株式会社 | Multi-tone mask manufacturing method |
EP2635419B1 (en) | 2010-11-05 | 2020-06-17 | Molecular Imprints, Inc. | Patterning of non-convex shaped nanostructures |
JP2012190827A (en) * | 2011-03-08 | 2012-10-04 | Toppan Printing Co Ltd | Imprint mold, production method therefor, and patterned body |
KR101830784B1 (en) | 2011-09-09 | 2018-02-22 | 삼성전자주식회사 | Polymer and organic light emitting diode comprising the same |
JP6019967B2 (en) * | 2012-09-10 | 2016-11-02 | 大日本印刷株式会社 | Pattern formation method |
JP6019966B2 (en) * | 2012-09-10 | 2016-11-02 | 大日本印刷株式会社 | Pattern formation method |
US10606170B2 (en) | 2017-09-14 | 2020-03-31 | Canon Kabushiki Kaisha | Template for imprint lithography and methods of making and using the same |
CN111624851A (en) * | 2020-06-16 | 2020-09-04 | 京东方科技集团股份有限公司 | Imprint template and preparation method thereof |
Citations (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3677178A (en) | 1965-10-11 | 1972-07-18 | Scott Paper Co | Dry planographic plates and methods, production and use |
US4190488A (en) | 1978-08-21 | 1980-02-26 | International Business Machines Corporation | Etching method using noble gas halides |
US4201800A (en) | 1978-04-28 | 1980-05-06 | International Business Machines Corp. | Hardened photoresist master image mask process |
US4498953A (en) | 1983-07-27 | 1985-02-12 | At&T Bell Laboratories | Etching techniques |
JPS6140845A (en) | 1984-07-31 | 1986-02-27 | Asahi Glass Co Ltd | Low reflectance glass |
US5348616A (en) | 1993-05-03 | 1994-09-20 | Motorola, Inc. | Method for patterning a mold |
US5817376A (en) | 1996-03-26 | 1998-10-06 | Minnesota Mining And Manufacturing Company | Free-radically polymerizable compositions capable of being coated by electrostatic assistance |
US5853446A (en) | 1996-04-16 | 1998-12-29 | Corning Incorporated | Method for forming glass rib structures |
US5885514A (en) | 1996-12-09 | 1999-03-23 | Dana Corporation | Ambient UVL-curable elastomer mold apparatus |
US5952127A (en) | 1991-08-22 | 1999-09-14 | Nec Corporation | Method of fabricating a phase shifting reticle |
US6051345A (en) | 1998-04-27 | 2000-04-18 | United Microelectronics Corp. | Method of producing phase shifting mask |
US6207570B1 (en) | 1999-08-20 | 2001-03-27 | Lucent Technologies, Inc. | Method of manufacturing integrated circuit devices |
US6251207B1 (en) | 1998-12-31 | 2001-06-26 | Kimberly-Clark Worldwide, Inc. | Embossing and laminating irregular bonding patterns |
US6274393B1 (en) | 1998-04-20 | 2001-08-14 | International Business Machines Corporation | Method for measuring submicron images |
US6284653B1 (en) | 2000-10-30 | 2001-09-04 | Vanguard International Semiconductor Corp. | Method of selectively forming a barrier layer from a directionally deposited metal layer |
US6309957B1 (en) | 2000-04-03 | 2001-10-30 | Taiwan Semiconductor Maufacturing Company | Method of low-K/copper dual damascene |
WO2001090816A1 (en) | 2000-05-24 | 2001-11-29 | Obducat Aktiebolag | Method in connection with the production of a template and the template thus produced |
US6334960B1 (en) | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
WO2002022916A1 (en) | 2000-09-18 | 2002-03-21 | Obducat Aktiebolag | Method of etching, as well as frame element, mask and prefabricated substrate element for use in such etching |
US20020135099A1 (en) | 2001-01-19 | 2002-09-26 | Robinson Timothy R. | Mold with metal oxide surface compatible with ionic release agents |
US6517977B2 (en) | 2001-03-28 | 2003-02-11 | Motorola, Inc. | Lithographic template and method of formation and use |
US20030180631A1 (en) | 2002-02-22 | 2003-09-25 | Hoya Corporation | Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same |
US20030232252A1 (en) * | 2002-06-18 | 2003-12-18 | Mancini David P. | Multi-tiered lithographic template and method of formation and use |
US6696220B2 (en) | 2000-10-12 | 2004-02-24 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro-and nano-imprint lithography |
US6716754B2 (en) | 2002-03-12 | 2004-04-06 | Micron Technology, Inc. | Methods of forming patterns and molds for semiconductor constructions |
US20040065976A1 (en) | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method and a mold to arrange features on a substrate to replicate features having minimal dimensional variability |
US20040065252A1 (en) | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method of forming a layer on a substrate to facilitate fabrication of metrology standards |
US6743368B2 (en) | 2002-01-31 | 2004-06-01 | Hewlett-Packard Development Company, L.P. | Nano-size imprinting stamp using spacer technique |
US6753131B1 (en) | 1996-07-22 | 2004-06-22 | President And Fellows Of Harvard College | Transparent elastomeric, contact-mode photolithography mask, sensor, and wavefront engineering element |
US20040150129A1 (en) | 2002-04-22 | 2004-08-05 | International Business Machines Corporation | Process of fabricating a precision microcontact printing stamp |
US6780001B2 (en) | 1999-07-30 | 2004-08-24 | Formfactor, Inc. | Forming tool for forming a contoured microelectronic spring mold |
EP1460738A2 (en) | 2003-03-21 | 2004-09-22 | Avalon Photonics AG | Wafer-scale replication-technique for opto-mechanical structures on opto-electronic devices |
US20040202865A1 (en) | 2003-04-08 | 2004-10-14 | Andrew Homola | Release coating for stamper |
US6808646B1 (en) | 2003-04-29 | 2004-10-26 | Hewlett-Packard Development Company, L.P. | Method of replicating a high resolution three-dimensional imprint pattern on a compliant media of arbitrary size |
US6852358B1 (en) | 2003-08-28 | 2005-02-08 | Chang Chun Plastics Co., Ltd. | Process for preparing an optical waveguide component from acrylate/titanium alkoxide composite material and the prepared optical waveguide component |
US20050064344A1 (en) | 2003-09-18 | 2005-03-24 | University Of Texas System Board Of Regents | Imprint lithography templates having alignment marks |
US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
US6878985B2 (en) | 2002-11-29 | 2005-04-12 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device having a memory cell that includes a floating gate electrode and control gate electrode |
US20050084804A1 (en) | 2003-10-16 | 2005-04-21 | Molecular Imprints, Inc. | Low surface energy templates |
US6890688B2 (en) | 2001-12-18 | 2005-05-10 | Freescale Semiconductor, Inc. | Lithographic template and method of formation and use |
US20050098534A1 (en) | 2003-11-12 | 2005-05-12 | Molecular Imprints, Inc. | Formation of conductive templates employing indium tin oxide |
US6900881B2 (en) | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US6916584B2 (en) | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
US6919152B2 (en) | 2000-07-16 | 2005-07-19 | Board Of Regents, The University Of Texas System | High resolution overlay alignment systems for imprint lithography |
US20050158900A1 (en) | 2004-01-16 | 2005-07-21 | Shih-Wei Lee | Fabrication method for liquid crystal display |
US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US6936194B2 (en) | 2002-09-05 | 2005-08-30 | Molecular Imprints, Inc. | Functional patterning material for imprint lithography processes |
US20050189676A1 (en) | 2004-02-27 | 2005-09-01 | Molecular Imprints, Inc. | Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography |
US20050230882A1 (en) | 2004-04-19 | 2005-10-20 | Molecular Imprints, Inc. | Method of forming a deep-featured template employed in imprint lithography |
US20050285308A1 (en) * | 2004-06-10 | 2005-12-29 | Tdk Corporation | Stamper, imprinting method, and method of manufacturing an information recording medium |
US20060019183A1 (en) | 2004-07-20 | 2006-01-26 | Molecular Imprints, Inc. | Imprint alignment method, system, and template |
US20060067650A1 (en) | 2004-09-27 | 2006-03-30 | Clarence Chui | Method of making a reflective display device using thin film transistor production techniques |
US7027156B2 (en) | 2002-08-01 | 2006-04-11 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
US7037639B2 (en) | 2002-05-01 | 2006-05-02 | Molecular Imprints, Inc. | Methods of manufacturing a lithography template |
US20060113697A1 (en) | 2004-12-01 | 2006-06-01 | Molecular Imprints, Inc. | Eliminating printability of sub-resolution defects in imprint lithography |
US7070405B2 (en) | 2002-08-01 | 2006-07-04 | Molecular Imprints, Inc. | Alignment systems for imprint lithography |
US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US7122482B2 (en) | 2003-10-27 | 2006-10-17 | Molecular Imprints, Inc. | Methods for fabricating patterned features utilizing imprint lithography |
US7136150B2 (en) | 2003-09-25 | 2006-11-14 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
US7140861B2 (en) | 2004-04-27 | 2006-11-28 | Molecular Imprints, Inc. | Compliant hard template for UV imprinting |
US20060266916A1 (en) | 2005-05-25 | 2006-11-30 | Molecular Imprints, Inc. | Imprint lithography template having a coating to reflect and/or absorb actinic energy |
US20070026324A1 (en) | 2005-07-28 | 2007-02-01 | Mitsubishi Electric Corporation | Substrate with light-shielding film, color filter substrate, method of manufacture of both, and display device having substrate with light-shielding film |
US7179396B2 (en) | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
US20070122942A1 (en) | 2002-07-08 | 2007-05-31 | Molecular Imprints, Inc. | Conforming Template for Patterning Liquids Disposed on Substrates |
WO2007117519A2 (en) | 2006-04-03 | 2007-10-18 | Molecular Imprints, Inc. | Method for determining deformation parameters for a patterned device in a lithography system |
US20070247608A1 (en) | 2006-04-03 | 2007-10-25 | Molecular Imprints, Inc. | Tesselated Patterns in Imprint Lithography |
US7309225B2 (en) | 2004-08-13 | 2007-12-18 | Molecular Imprints, Inc. | Moat system for an imprint lithography template |
US7396475B2 (en) | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
WO2008097278A2 (en) | 2006-09-19 | 2008-08-14 | Molecular Imprints, Inc. | Etch-enhanced technique for lift-off patterning |
US20080292805A1 (en) * | 2007-05-25 | 2008-11-27 | Fujitsu Limited | Method for manufacturing stamper, method for manufacturing nanohole structure, and method for manufacturing magnetic recording medium |
WO2009067149A1 (en) | 2007-11-21 | 2009-05-28 | Molecular Imprints, Inc. | Method of creating a template employing a lift-off process |
US7547398B2 (en) * | 2006-04-18 | 2009-06-16 | Molecular Imprints, Inc. | Self-aligned process for fabricating imprint templates containing variously etched features |
-
2007
- 2007-11-21 US US11/943,907 patent/US7906274B2/en not_active Expired - Fee Related
-
2008
- 2008-11-10 JP JP2010534938A patent/JP2011505066A/en not_active Withdrawn
- 2008-11-10 KR KR1020107009469A patent/KR20100097100A/en not_active Application Discontinuation
- 2008-11-10 WO PCT/US2008/012637 patent/WO2009067149A1/en active Application Filing
- 2008-11-18 TW TW097144488A patent/TW200933699A/en unknown
Patent Citations (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3677178A (en) | 1965-10-11 | 1972-07-18 | Scott Paper Co | Dry planographic plates and methods, production and use |
US4201800A (en) | 1978-04-28 | 1980-05-06 | International Business Machines Corp. | Hardened photoresist master image mask process |
US4190488A (en) | 1978-08-21 | 1980-02-26 | International Business Machines Corporation | Etching method using noble gas halides |
US4498953A (en) | 1983-07-27 | 1985-02-12 | At&T Bell Laboratories | Etching techniques |
JPS6140845A (en) | 1984-07-31 | 1986-02-27 | Asahi Glass Co Ltd | Low reflectance glass |
US5952127A (en) | 1991-08-22 | 1999-09-14 | Nec Corporation | Method of fabricating a phase shifting reticle |
US5348616A (en) | 1993-05-03 | 1994-09-20 | Motorola, Inc. | Method for patterning a mold |
US5817376A (en) | 1996-03-26 | 1998-10-06 | Minnesota Mining And Manufacturing Company | Free-radically polymerizable compositions capable of being coated by electrostatic assistance |
US5853446A (en) | 1996-04-16 | 1998-12-29 | Corning Incorporated | Method for forming glass rib structures |
US6753131B1 (en) | 1996-07-22 | 2004-06-22 | President And Fellows Of Harvard College | Transparent elastomeric, contact-mode photolithography mask, sensor, and wavefront engineering element |
US5885514A (en) | 1996-12-09 | 1999-03-23 | Dana Corporation | Ambient UVL-curable elastomer mold apparatus |
US6274393B1 (en) | 1998-04-20 | 2001-08-14 | International Business Machines Corporation | Method for measuring submicron images |
US6051345A (en) | 1998-04-27 | 2000-04-18 | United Microelectronics Corp. | Method of producing phase shifting mask |
US6251207B1 (en) | 1998-12-31 | 2001-06-26 | Kimberly-Clark Worldwide, Inc. | Embossing and laminating irregular bonding patterns |
US6334960B1 (en) | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
US6780001B2 (en) | 1999-07-30 | 2004-08-24 | Formfactor, Inc. | Forming tool for forming a contoured microelectronic spring mold |
US6207570B1 (en) | 1999-08-20 | 2001-03-27 | Lucent Technologies, Inc. | Method of manufacturing integrated circuit devices |
US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
US6309957B1 (en) | 2000-04-03 | 2001-10-30 | Taiwan Semiconductor Maufacturing Company | Method of low-K/copper dual damascene |
WO2001090816A1 (en) | 2000-05-24 | 2001-11-29 | Obducat Aktiebolag | Method in connection with the production of a template and the template thus produced |
US20030139042A1 (en) * | 2000-05-24 | 2003-07-24 | Babak Heidari | Method in connection with the production of a template and the template thus produced |
US6919152B2 (en) | 2000-07-16 | 2005-07-19 | Board Of Regents, The University Of Texas System | High resolution overlay alignment systems for imprint lithography |
US6986975B2 (en) | 2000-07-16 | 2006-01-17 | Board Of Regents, The University Of Texas System | Method of aligning a template with a substrate employing moire patterns |
WO2002022916A1 (en) | 2000-09-18 | 2002-03-21 | Obducat Aktiebolag | Method of etching, as well as frame element, mask and prefabricated substrate element for use in such etching |
US6696220B2 (en) | 2000-10-12 | 2004-02-24 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro-and nano-imprint lithography |
US20080095878A1 (en) | 2000-10-12 | 2008-04-24 | Board Of Regents, University Of Texas System | Imprint Lithography Template Having a Feature Size Under 250 nm |
US7229273B2 (en) | 2000-10-12 | 2007-06-12 | Board Of Regents, The University Of Texas System | Imprint lithography template having a feature size under 250 nm |
US6284653B1 (en) | 2000-10-30 | 2001-09-04 | Vanguard International Semiconductor Corp. | Method of selectively forming a barrier layer from a directionally deposited metal layer |
US20020135099A1 (en) | 2001-01-19 | 2002-09-26 | Robinson Timothy R. | Mold with metal oxide surface compatible with ionic release agents |
US6517977B2 (en) | 2001-03-28 | 2003-02-11 | Motorola, Inc. | Lithographic template and method of formation and use |
US6890688B2 (en) | 2001-12-18 | 2005-05-10 | Freescale Semiconductor, Inc. | Lithographic template and method of formation and use |
US6743368B2 (en) | 2002-01-31 | 2004-06-01 | Hewlett-Packard Development Company, L.P. | Nano-size imprinting stamp using spacer technique |
US20030180631A1 (en) | 2002-02-22 | 2003-09-25 | Hoya Corporation | Halftone phase shift mask blank, halftone phase shift mask, and method of producing the same |
US6716754B2 (en) | 2002-03-12 | 2004-04-06 | Micron Technology, Inc. | Methods of forming patterns and molds for semiconductor constructions |
US20040150129A1 (en) | 2002-04-22 | 2004-08-05 | International Business Machines Corporation | Process of fabricating a precision microcontact printing stamp |
US7037639B2 (en) | 2002-05-01 | 2006-05-02 | Molecular Imprints, Inc. | Methods of manufacturing a lithography template |
US20030232252A1 (en) * | 2002-06-18 | 2003-12-18 | Mancini David P. | Multi-tiered lithographic template and method of formation and use |
US6852454B2 (en) | 2002-06-18 | 2005-02-08 | Freescale Semiconductor, Inc. | Multi-tiered lithographic template and method of formation and use |
US20070122942A1 (en) | 2002-07-08 | 2007-05-31 | Molecular Imprints, Inc. | Conforming Template for Patterning Liquids Disposed on Substrates |
US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US6900881B2 (en) | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US7070405B2 (en) | 2002-08-01 | 2006-07-04 | Molecular Imprints, Inc. | Alignment systems for imprint lithography |
US7281921B2 (en) | 2002-08-01 | 2007-10-16 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
US6916584B2 (en) | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
US7027156B2 (en) | 2002-08-01 | 2006-04-11 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
US6936194B2 (en) | 2002-09-05 | 2005-08-30 | Molecular Imprints, Inc. | Functional patterning material for imprint lithography processes |
US20040065252A1 (en) | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method of forming a layer on a substrate to facilitate fabrication of metrology standards |
US20040065976A1 (en) | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method and a mold to arrange features on a substrate to replicate features having minimal dimensional variability |
US6878985B2 (en) | 2002-11-29 | 2005-04-12 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device having a memory cell that includes a floating gate electrode and control gate electrode |
EP1460738A2 (en) | 2003-03-21 | 2004-09-22 | Avalon Photonics AG | Wafer-scale replication-technique for opto-mechanical structures on opto-electronic devices |
US7179396B2 (en) | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
US20040202865A1 (en) | 2003-04-08 | 2004-10-14 | Andrew Homola | Release coating for stamper |
US7396475B2 (en) | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
US6808646B1 (en) | 2003-04-29 | 2004-10-26 | Hewlett-Packard Development Company, L.P. | Method of replicating a high resolution three-dimensional imprint pattern on a compliant media of arbitrary size |
US6852358B1 (en) | 2003-08-28 | 2005-02-08 | Chang Chun Plastics Co., Ltd. | Process for preparing an optical waveguide component from acrylate/titanium alkoxide composite material and the prepared optical waveguide component |
US20050064344A1 (en) | 2003-09-18 | 2005-03-24 | University Of Texas System Board Of Regents | Imprint lithography templates having alignment marks |
US7136150B2 (en) | 2003-09-25 | 2006-11-14 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
US20050084804A1 (en) | 2003-10-16 | 2005-04-21 | Molecular Imprints, Inc. | Low surface energy templates |
US7122482B2 (en) | 2003-10-27 | 2006-10-17 | Molecular Imprints, Inc. | Methods for fabricating patterned features utilizing imprint lithography |
US20070026542A1 (en) | 2003-11-12 | 2007-02-01 | Molecular Imprints, Inc. | Formation of conductive templates employing indium tin oxide |
US20050098534A1 (en) | 2003-11-12 | 2005-05-12 | Molecular Imprints, Inc. | Formation of conductive templates employing indium tin oxide |
US20050158900A1 (en) | 2004-01-16 | 2005-07-21 | Shih-Wei Lee | Fabrication method for liquid crystal display |
US20050189676A1 (en) | 2004-02-27 | 2005-09-01 | Molecular Imprints, Inc. | Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography |
US20050230882A1 (en) | 2004-04-19 | 2005-10-20 | Molecular Imprints, Inc. | Method of forming a deep-featured template employed in imprint lithography |
US7140861B2 (en) | 2004-04-27 | 2006-11-28 | Molecular Imprints, Inc. | Compliant hard template for UV imprinting |
US7279113B2 (en) | 2004-04-27 | 2007-10-09 | Molecular Imprints, Inc. | Method of forming a compliant template for UV imprinting |
US20050285308A1 (en) * | 2004-06-10 | 2005-12-29 | Tdk Corporation | Stamper, imprinting method, and method of manufacturing an information recording medium |
US20060019183A1 (en) | 2004-07-20 | 2006-01-26 | Molecular Imprints, Inc. | Imprint alignment method, system, and template |
US7309225B2 (en) | 2004-08-13 | 2007-12-18 | Molecular Imprints, Inc. | Moat system for an imprint lithography template |
US20060067650A1 (en) | 2004-09-27 | 2006-03-30 | Clarence Chui | Method of making a reflective display device using thin film transistor production techniques |
US20060113697A1 (en) | 2004-12-01 | 2006-06-01 | Molecular Imprints, Inc. | Eliminating printability of sub-resolution defects in imprint lithography |
US20060266916A1 (en) | 2005-05-25 | 2006-11-30 | Molecular Imprints, Inc. | Imprint lithography template having a coating to reflect and/or absorb actinic energy |
US20070026324A1 (en) | 2005-07-28 | 2007-02-01 | Mitsubishi Electric Corporation | Substrate with light-shielding film, color filter substrate, method of manufacture of both, and display device having substrate with light-shielding film |
US20070247608A1 (en) | 2006-04-03 | 2007-10-25 | Molecular Imprints, Inc. | Tesselated Patterns in Imprint Lithography |
WO2007117519A2 (en) | 2006-04-03 | 2007-10-18 | Molecular Imprints, Inc. | Method for determining deformation parameters for a patterned device in a lithography system |
US7547398B2 (en) * | 2006-04-18 | 2009-06-16 | Molecular Imprints, Inc. | Self-aligned process for fabricating imprint templates containing variously etched features |
WO2008097278A2 (en) | 2006-09-19 | 2008-08-14 | Molecular Imprints, Inc. | Etch-enhanced technique for lift-off patterning |
US20080292805A1 (en) * | 2007-05-25 | 2008-11-27 | Fujitsu Limited | Method for manufacturing stamper, method for manufacturing nanohole structure, and method for manufacturing magnetic recording medium |
WO2009067149A1 (en) | 2007-11-21 | 2009-05-28 | Molecular Imprints, Inc. | Method of creating a template employing a lift-off process |
Non-Patent Citations (31)
Title |
---|
Abstract of Japanese Patent 61-040845, Feb. 27, 1986. |
Bailey et al., Template Fabrication Schemes for Step and Flash Imprint Lithography, Microelectronic Engineering, 61-62, pp. 461-467 Jan. 1, 2002. |
Bien et al., Characterization of Masking Materials for Deep Glass Micromachining, J. Micromech. Microeng. 13 pp. S34-S40 Jan. 1, 2003. |
Britten et al., Multiscale, Multifuncation Diffractive Structures We Etched into Fused Silica for High-Laser Damage Threshold Applications, Applied Optics, vol. 37, No. 30 Oct. 20, 1998. |
Dauksher et al., Characterization of and Imprint Results Using Indium Tin Oxide-Based Step and Flash Imprint Lithography Templates, J. Vac. Sci. Technol. B 20(6), pp. 2857-2861 Nov. 1, 2002. |
Dauksher et al., Repair of Step and Flash Imprint Lithography Templates, J. Vac. Sci. Technol. B 22(6), pp. 3306-3311 Nov. 1, 2004. |
Fletcher et al., Microfabricated Silicon Solid Immersion Lens, Jounral of Microelectromechanical Systems, vol. 10, No. 3 Sep. 1, 2001. |
Gehoski et al., Indium Tin Oxide Template Development for Step and Flash Imprint Lithgraphy, SPIE Microlithography Conference Feb. 1, 2005. |
International Search Report for Application No. WO2008097278, dated Sep. 12, 2008, 1 page. |
Khandaker et al., Fabrication of Microlens Arrays by Direct Electron Beam Exposure of Photoresist, Pure Appl. Opt. 6, pp. 637-641 Jan. 1, 1997. |
Kim et al., Replication Qualities and Optical Properties of UV-moulded Microlens Arrays, J. Phys. D: Appl. Phys. 36; pp. 2451-2456 Jan. 1, 2003. |
Kirby et al., In-Situ Fabrication of Dialysis Membranes in Glass Microchannels using Laser-induced Phase-Separation Polymerization, MicroTAS 2002, p. 742-744 Jan. 1, 2002. |
Kobayashi et al., Batch Bulk-Mircomachined High-Precision Metal-On-Insulator Microspires and Their Application to Scanning Tunneling Microscopy, J. Micromech. Microeng. 14; pp. S76-S81 Jan. 1, 2004. |
Konijn et al., Nanoimprint Lithography of Sub-100nm 3D Structures, Microelectronic Engineering 78-79; pp. 653-658 Jan. 1, 2005. |
Krug et al., Fine Patterning of Thin Sol-gel Films, Journal of Non-Crystalline Solids 147 & 148, pp. 447-450 Jan. 1, 1992. |
Kunnavakkam et al., Low-cost, Low-loss Microlens Arrays Fabricated by Soft-Lithography Replication Process, Applied Physics Letters, vol. 82, No. 8 Feb. 24, 2003. |
Mancini et al., Analysis of Critical Dimension Uniformity for Step and Flash Imprint Lithography, SPIE Microlithography Conference Feb. 1, 2003. |
Mancini et al., Hydrogen Silsesquioxane for Direct Electron-Beam Patterning of Step and Flash Imprint Lithography Templates, J. Vac. Sci. Technol. B 20(6), pp. 2896-2901 Nov. 1, 2002. |
Mansell et al., Binary-Optic Smoothing with Isotropic Etching, Applied Optics; vol. 36, No. 20 Jul. 10, 1997. |
Nordquist et al., Critical Dimension and Image Placement Issues for Step and Flash Imprint Lithography Templates, 22nd Annual BACUS Symposium on Photomask Technology, Monterey, CA Sep. 1, 2002. |
PCT/US2008/12637 International Search Report, Jan. 12, 2009. |
Resnick et al., High Resolution Templates for Step and Flash Imprint Lithography, Journal of Microlithography, Microfabrication, and Microsystems. vol. 1. No. 3. Oct. 1, 2002. |
Resnick et al., High Resolution Templates for Step and Flash Imprint Lithography, SPIE Microlithography Conference Feb. 1, 2002. |
Resnick et al., Imprint Lithography: Lab Curiosity or the Real NGL?, SPIE Microlithography Conference Feb. 1, 2003. |
Resnick et al., New Methods for Fabricating Step and Flash Imprint Lithography Templates, NIST-SPIE Conference on Nanotechnology Sep. 1, 2001. |
Sano et al., Submicron Spaced Lens Array Process Technology for a High Photosensitivity CCD Image Sensor, IEEE IEDM Dig.; pp. 283-286 Jan. 1, 1990. |
Schmid et al., U.S. Appl. No. 11/856,862 entitled "Etch-Enhanced Technique for Lift-Off Patterning," filed Sep. 18, 2007, 23 pages. |
Thompson et al., Fabrication of Step and Flash Imprint Lithography Templates Using Commercial Mask Processes, SPIE Microlithography Conference Feb. 1, 2003. |
Translation of Japanese Patent 61-40845, Feb. 1, 1986. |
Tsukamoto et al., High Sensitivity Pixel Technology for a ¼ inch PAL 430k pixel IT-CCD, IEE Custom Integrated Circuits Conference Jan. 1, 1996. |
Waheed et al., Balancing Aerial Image Intensity for Alternating Aperture Phase Shift Masks Using an Isotropic Dry-Etch, Proceedings of SPIE vol. 5130 Apr. 18, 2003. |
Also Published As
Publication number | Publication date |
---|---|
KR20100097100A (en) | 2010-09-02 |
US20090130598A1 (en) | 2009-05-21 |
TW200933699A (en) | 2009-08-01 |
WO2009067149A1 (en) | 2009-05-28 |
JP2011505066A (en) | 2011-02-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7906274B2 (en) | Method of creating a template employing a lift-off process | |
US7547398B2 (en) | Self-aligned process for fabricating imprint templates containing variously etched features | |
US8142703B2 (en) | Imprint lithography method | |
US8142850B2 (en) | Patterning a plurality of fields on a substrate to compensate for differing evaporation times | |
Zhou | Nanoimprint lithography: an enabling process for nanofabrication | |
US8545709B2 (en) | Critical dimension control during template formation | |
US20070246850A1 (en) | Method for Detecting a Particle in a Nanoimprint Lithography System | |
US20080303187A1 (en) | Imprint Fluid Control | |
US8961800B2 (en) | Functional nanoparticles | |
US20090014917A1 (en) | Drop Pattern Generation for Imprint Lithography | |
US7985530B2 (en) | Etch-enhanced technique for lift-off patterning | |
US11604409B2 (en) | Template replication | |
US20100109194A1 (en) | Master Template Replication | |
US8512585B2 (en) | Template pillar formation | |
US20100095862A1 (en) | Double Sidewall Angle Nano-Imprint Template | |
KR101789921B1 (en) | Method of manufacturing a nano thin-layer pattern structure | |
WO2005015311A2 (en) | Near-field exposure method and apparatus, near-field exposure mask, and device manufacturing method | |
Mohamed | Three-Dimensional Patterning Using Ultraviolet Curable Nanoimprint Lithography. | |
Rodas et al. | Manufacturing of 3D submicronic structures at wafer scale | |
Mednikarov et al. | Photolithographic structuring with evaporated inorganic photoresist | |
Kettle et al. | Fabrication of Step-and-Flash Imprint Lithography (S-FIL) templates using XeF 2 enhanced focused ion-beam etching | |
Klonner | Stamp Fabrication for ultraviolet Nanoimprint Lithography |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: MOLECULAR IMPRINTS, INC., TEXAS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SCHMID, GERARD M., MR.;RESNICK, DOUGLAS J., DR.;MILLER, MICHAEL N., MR.;REEL/FRAME:020146/0095 Effective date: 20071105 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
AS | Assignment |
Owner name: CANON INC., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MOLECULAR IMPRINTS, INC.;REEL/FRAME:026842/0929 Effective date: 20110901 |
|
AS | Assignment |
Owner name: CANON INC., JAPAN Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE FROM AN "ASSIGNMENT" TO "SECURITY AGREEMENT" PREVIOUSLY RECORDED ON REEL 026842 FRAME 0929. ASSIGNOR(S) HEREBY CONFIRMS THE THE ORIGINAL DOCUMENT SUBMITTED WAS A "SECURITY AGREEMENT";ASSIGNOR:MOLECULAR IMPRINTS, INC.;REEL/FRAME:031003/0031 Effective date: 20110901 |
|
AS | Assignment |
Owner name: CANON INC., JAPAN Free format text: RELEASE OF SECURITY INTEREST;ASSIGNOR:MOLECULAR IMPRINTS, INC.;REEL/FRAME:033161/0705 Effective date: 20140613 |
|
AS | Assignment |
Owner name: MOLECULAR IMPRINTS, INC., TEXAS Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNOR AND ASSIGNEE PREVIOUSLY RECORDED ON REEL 033161 FRAME 0705. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:CANON INC.;REEL/FRAME:033227/0398 Effective date: 20140613 |
|
AS | Assignment |
Owner name: MII NEWCO, INC., TEXAS Free format text: ASSIGNMENT OF JOINT OWNERSHIP;ASSIGNOR:MOLECULAR IMPRINTS, INC.;REEL/FRAME:033329/0280 Effective date: 20140710 |
|
AS | Assignment |
Owner name: CANON NANOTECHNOLOGIES, INC., TEXAS Free format text: CHANGE OF NAME;ASSIGNOR:MOLECULAR IMPRINTS, INC.;REEL/FRAME:033400/0184 Effective date: 20140417 |
|
AS | Assignment |
Owner name: MOLECULAR IMPRINTS, INC., TEXAS Free format text: CHANGE OF NAME;ASSIGNOR:MII NEWCO, INC.;REEL/FRAME:033449/0684 Effective date: 20140423 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: MOLECULAR IMPRINTS, INC., TEXAS Free format text: CONFIRMATORY ASSIGNMENT OF JOINT PATENT OWNERSHIP;ASSIGNOR:CANON NANOTECHNOLOGIES, INC.;REEL/FRAME:035507/0559 Effective date: 20150427 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20190315 |
|
AS | Assignment |
Owner name: JP MORGAN CHASE BANK, N.A., NEW YORK Free format text: PATENT SECURITY AGREEMENT;ASSIGNORS:MAGIC LEAP, INC.;MOLECULAR IMPRINTS, INC.;MENTOR ACQUISITION ONE, LLC;REEL/FRAME:050138/0287 Effective date: 20190820 |
|
AS | Assignment |
Owner name: CITIBANK, N.A., NEW YORK Free format text: ASSIGNMENT OF SECURITY INTEREST IN PATENTS;ASSIGNOR:JPMORGAN CHASE BANK, N.A.;REEL/FRAME:050967/0138 Effective date: 20191106 |