US7005640B2 - Method and apparatus for the characterization of a depth structure in a substrate - Google Patents
Method and apparatus for the characterization of a depth structure in a substrate Download PDFInfo
- Publication number
- US7005640B2 US7005640B2 US11/008,643 US864304A US7005640B2 US 7005640 B2 US7005640 B2 US 7005640B2 US 864304 A US864304 A US 864304A US 7005640 B2 US7005640 B2 US 7005640B2
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- United States
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- substrate
- depth structure
- cutout
- ion beam
- cut
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2206—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
Definitions
- the present invention relates to a method and an apparatus for the characterization of a depth structure in a substrate at a surface of the substrate.
- HAR structures structures having a large ratio between the depth measured perpendicular to the surface of a substrate and the lateral dimensions
- Structures of this type have to be characterized at least on the basis of random sampling in the course of production, their dimensions, in particular, being determined in order to monitor the production line and, if appropriate, to track process parameters.
- This characterization is conventionally done for example by breaking the semiconductor substrate, a structure arranged at the edge of the break subsequently being imaged by scanning electron microscopy, scanning force microscopy or in some other suitable way in order to characterize it and, in particular, to determine its dimensions from the imaging.
- the substrate must contain a multiplicity thereof in order that at least one is situated at the edge of the break. The breaking of the wafer generally precludes further processing thereof.
- a cutout serving as a viewing window is produced in the substrate by means of a focused ion beam, which cutout incipiently cuts the depth structure.
- the cutout is arranged and formed in such a way that the incipiently cut structure can subsequently be detected or imaged by scanning electron microscopy by means of an electron beam that is obliquely incident on the incipiently cut structure.
- the present invention relates to a method and an apparatus for the characterization of a depth structure in a substrate at a surface of the substrate, the depth structure being, in particular, a cutout or a cutout having a large ratio between depth and lateral dimension or else a structure made of a material that differs from the material of the substrate, thereof the corrupting influence of the waterfall effect is avoided or reduced.
- One embodiment of the present invention provides a method for the characterization of a depth structure in a substrate at a surface of the substrate, including:
- Another embodiment of the present invention provides an apparatus for the characterization of a depth structure in a substrate at a surface of the substrate, having a device for removing a layer of the substrate, which incipiently cuts the depth structure and a cutout at the surface of the substrate by means of an ion beam in order to obtain a cut area; and a device for imaging the cut area through the cutout in order to characterize the depth structure, wherein the removal device is formed in such a way that the layer and the normal to the area of the surface of the substrate assume an acute angle that is greater than zero.
- the present invention is based on no longer incipiently cutting the depth structures in a plane perpendicular to the surface of the substrate and thus parallel to the main extent of the depth structure, but rather obliquely.
- the oblique cut area includes a significantly smaller cross-sectional area of the depth structure.
- the cross-sectional area in the case of an HAR structure is significantly shorter in the case of an oblique cut area than in the case of a vertical cut area. This is advantageous since the altering action of the waterfall effect on the cross-sectional area greatly depends on the length of the cross-sectional area as measured in the direction of the focused ion beam.
- the waterfall effect even has a positive effect if a width of the cross-sectional area that is measured perpendicular to the direction of the ion beam and parallel to the surface of the substrate is detected for the characterization of the depth structure.
- the waterfall effect lengthens the depth structure and thus the cross-sectional area in the direction of the ion beam.
- the width of the cross-sectional area therefore changes more slowly in the direction parallel to the ion beam than would be the case without the waterfall effect.
- the maximum of the width of the cross-sectional area is widened, the maximum width being altered insignificantly. Consequently, the location at which the width of the cross-sectional area is detected is less critical. This is advantageous primarily in the case of an automatic evaluation of the imaging of the cut area with the cross-sectional area or an automatic detection of the width of the cross-sectional area from the imaging.
- steps a), b) and c) are executed multiply in order to characterize the depth structure on the basis of imagings of cut areas in a plurality of depths.
- an apparatus is preferably distinguished by the fact that the removal device and the imaging device are arranged at a vacuum vessel in such a way that the removal and the imaging can be effected without moving the substrate, or, in particular, having to transport it from one vacuum vessel to another vacuum vessel.
- FIG. 1 shows schematic sectional illustrations for describing a conventional method.
- FIG. 2 shows a schematic illustration of a conventional apparatus.
- FIG. 3 shows schematic sectional illustrations for describing a method according to the present invention.
- FIG. 4 shows schematic illustrations for describing a method according to the present invention.
- FIG. 5 shows schematic illustrations for describing a method according to the present invention.
- FIG. 6 shows a schematic illustration of an apparatus according to the present invention.
- FIG. 7 shows a schematic illustration of an apparatus according to the present invention.
- FIG. 1 shows schematic sectional illustrations A, B, C, D, E of a substrate 10 in different stages of a conventional method for the characterization of a depth structure 12 in the substrate 10 at a surface 14 of the substrate 10 .
- the depth structure 12 is in this case an HAR structure.
- a protection cap 16 (subfigure B).
- a cutout 20 is produced by means of a focused ion beam 18 (preferably Ga ions; subfigure C), the cutout having a triangular cross section in the vertical section illustrated (subfigure D).
- the focused ion beam 18 in this case runs parallel to the depth structure 12 or the main extent thereof, i.e. perpendicular to the surface 14 of the substrate 10 .
- a cut area 22 arises with the cutout 20 , the cut area being arranged parallel to the focused ion beam 18 and thus perpendicular to the surface 14 of the substrate 10 and parallel to the depth structure 12 .
- the cutout 20 incipiently cuts the depth structure, so that the cut area 22 , which for the rest is planar, has a depression that stems from the depth structure 12 or whose cross-sectional area is a vertical cross-sectional area of the depth structure 12 .
- the cutout 20 serves as a viewing window in order subsequently to scan or image the cut area 22 by means of a scanning electron microscope or the focused electron beam 24 thereof at an oblique angle (subfigure E).
- the focused ion beam 18 is actually not ideally linear, but rather slightly expanded for various reasons. As is indicated in subfigure E by the arrows 26 , material of the substrate outside the ideal shape of the cutout 20 is therefore also removed during the production of the cutout 20 . This has the effect, in particular, of altering the geometry of the depth structure 12 (indicated by the surface 28 ) as soon as it is incipiently cut by the cutout 20 .
- the image of the depth structure 12 incipiently cut by the cut area 22 which image is subsequently detected by means of the electron beam 24 , therefore does not show the depth structure in its original geometry, but rather, in particular, with an enlarged width and an enlarged depth (measured perpendicular to the surface 14 ).
- FIG. 2 is a schematic illustration of a conventional apparatus for carrying out the conventional method illustrated above with reference to FIG. 1 at the substrate 10 .
- the apparatus comprises a device 38 for generating the focused ion beam 18 and a device 44 for generating the electron beam 24 .
- the interaction products (secondary electrons, X-rays, etc.) generated by the electrons of the electron beam 24 at the substrate 10 and, in particular, at the cut area 22 ( FIG. 1 ) are detected by a detector 46 .
- the device 44 for generating the electron beam 24 , the detector 46 and a control and evaluation unit 48 together form a scanning electron microscope, the control and evaluation unit 48 generating an image of the scanned surface by detecting the temporal correlation of the interaction products detected by the detector 46 and the instantaneous location onto which the electron beam 26 is directed.
- FIG. 3 shows schematic sectional views of a substrate 10 with a depth structure 12 at a surface 14 of the substrate 10 in different stages of a method according to the present invention.
- the depth structure 12 is an arbitrary structure extending from the surface 14 of the substrate 10 into the depth. To put it another way, the depth structure 12 has a finite extent in the direction perpendicular to the surface 14 of the substrate 10 .
- the present invention is particularly suitable as well for a depth structure having a large ratio between the vertical dimension measured in the direction perpendicular to the surface of the substrate and the lateral dimension or dimensions measured in the direction parallel to the surface.
- the depth structure 12 at least approximately has the form of a cylinder with a circular, square, rectangular or arbitrary other base area.
- the depth structure is either a cutout or a cavity or else it has a material that differs from the surrounding material of the substrate 10 .
- the present invention can be advantageously employed particularly in the case of a depth structure which is hollow or unfilled or else has a material or is filled with a material which is removed by the focused ion beam 24 or the ions thereof more rapidly than the surrounding material of the substrate 10 .
- the depth structure 12 is firstly covered by a protection cap 16 made of W, SiO 2 , Pt or some other suitable material in order to protect it as long as possible against an action of the ions of the focused ion beam 18 (subfigure B).
- the ion beam 18 produces a cutout 20 that extends near to the depth structure but does not incipiently cut the latter.
- at least one thin wall 50 made of the material of the substrate 10 remains between the cutout 20 and the depth structure 12 with the result that no ions of the focused ion beam 18 can penetrate into the depth structure 12 and alter the latter (subfigure D).
- the cutout 20 is preferably produced by a focused ion beam 18 which is particularly preferably incident perpendicularly to the surface 14 of the substrate 10 .
- the cutout 20 is produced by some other suitable method, for example by a wet or dry etching method, an anisotropic dry etching method being particularly suitable in order to produce the cutout 20 as closely as possible next to the depth structure 12 and at the same time to ensure that the wall 50 has a uniform thickness but no holes.
- the depth structure is incipiently cut obliquely by means of a focused ion beam 18 ′.
- the ion beam 18 ′ is tilted relative to the cutout 20 .
- the direction of the focused ion beam 18 assumes an acute angle with respect to the normal to the area of the surface 14 of the substrate 10 , said angle being greater than zero.
- the material that surrounds the depth structure 12 and, if appropriate, also the material that fills said depth structure is removed in layers running obliquely between the surface 14 of the substrate 10 and the cutout 20 .
- the result is one or preferably successively a plurality of cut areas—tilted with respect to the normal to the area of the surface 14 of the substrate 10 —parallel to the cut planes 52 .
- the cut area currently uncovered is scanned by the focused electron beam 24 of a scanning electron microscope in order to image the cut area with the cross-sectional area of the depth structure 12 contained therein along the cut plane 52 .
- the cutout 20 serves as a viewing window which is arranged between the device for generating the focused electron beam and the depth structure 12 and through which the focused electron beam 24 falls onto the cut plane.
- the direction of the focused electron beam 24 and the orientation of the cut planes 52 are in this case preferably chosen in such a way that the direction of the focused electron beam 24 and the normal to the area of the cut plane 52 assume an angle that is as small as possible, and preferably in such a way that the normals to the area of the cut plane 52 and of the surface 14 of the substrate 10 and also the direction of the focused electron beam 24 lie in one plane.
- FIG. 4 the situation after uncovering a cut area 22 ′ along one of the cut planes 52 from FIG. 3 is illustrated on the right.
- the image of the cut area 22 ′ obtained by scanning electron microscopy is illustrated schematically on the left. Since the cut area 22 ′ incipiently cuts the depth structure 12 , it has a cross-sectional area 60 thereof.
- the depth structure 12 is cylindrical and has a circular or elliptical base area.
- the cross-sectional area 60 in the cut area 22 ′ is therefore elliptical.
- the focused electron beam 18 ′ also produces an alteration of the cross-sectional area 60 in the course of the cut area 22 ′ being uncovered in accordance with the invention.
- the waterfall effect lengthens the cross-sectional area 60 “downstream” in the direction of the focused ion beam.
- the material of the substrate 10 is removed to an intensified extent within a zone 62 lying outside the ideal cross-sectional area 60 , so that there the material surface finally lies below the plane of the cut area 22 . Therefore, the image of the cut area 22 ′ which is obtained by scanning electron microscopy and is illustrated on the left in FIG. 4 does not show the ideal cross-sectional area 60 , but rather a cross-sectional area 60 extended by the zone 62 .
- This action of the waterfall effect is not disadvantageous, however, but rather in many cases advantageous, as is described below.
- This advantage is based on the fact that the width of the zone 62 essentially corresponds to the width of the cross-sectional area 60 .
- the width increases slowly “downstream”. Consequently, during an automatic detection of the width of the cross-sectional area 60 the location at which the width is measured is not very critical. Irrespective of that location from the locations represented by the dash-dotted lines 64 at which the width is actually measured, the actual width of the cross-sectional area 60 or of the depth structure 12 is in any event detected to a good approximation or with little error.
- a plurality of layers are removed successively by means of the focused ion beam 18 ′ ( FIG. 3 ), thereby successively uncovering a plurality of cut areas 22 ′ in different depths.
- Each of the cut areas 22 ′ is imaged by electron microscopy in order to obtain images, as illustrated on the left of FIG. 4 , which are subsequently measured in order, by way of example, to obtain the width of the depth structure 12 in the different depths.
- the depth is the vertical distance from the plane of the surface 14 of the substrate 10 .
- A is the depth of the “front” or upper end of the cross-sectional area 60 .
- C is the distance between said upper end of the cross-sectional area 60 and the location at which the width is determined. C can readily be determined from the image of the cut area 22 ′ illustrated on the left in FIG. 5 and is preferably determined at the same time as the width.
- B is the projection of C onto the vertical.
- the method illustrated with reference to FIGS. 3 , 4 and 5 can be used to determine the width of the depth structure 12 in a plurality of depths or as a (discrete) function of the depth.
- other parameters are obtained from the imagings of the cut areas 22 ′ in order to characterize the depth structure 12 .
- a two-dimensional image of a vertical cut through the depth structure 12 is synthesized from the data obtained.
- a three-dimensional tomogram of the depth structure is synthesized.
- the method described does not require the substrate 10 to be broken. Therefore, it is possible to carry out a larger number of experiments on a single substrate and to obtain a larger number of meaningful and reliable results. If a plurality of depth structures 12 or else more complex structures are processed in a substrate, the influence of different process steps on the structure can be studied on one and the same substrate ( 10 ).
- the processing is temporarily interrupted in each case after the corresponding process steps in order in each case to characterize one or a plurality of the structures processed thus far, as described above with reference to FIGS. 3 , 4 and 5 .
- the cutout 20 preferably incipiently cuts in each case a plurality of depth structures 12 (for example 4 ) simultaneously. Mini-statistics about the examined characteristics of the depth structure are thus obtained in each case.
- the depth structures characterized according to the different process steps in accordance with the present invention are preferably directly adjacent or lie within a smallest possible region at the surface 14 of the substrate 10 .
- the influence of local variations in the process parameters can be disregarded in this case.
- the results of the characterization can therefore be attributed solely to the influence of the individual process steps with high accuracy.
- One example of a sequence of process steps that can be examined in this way comprises the steps of PHMO (poly hard mask open), DTMO (deep trench mask open), DT (deep trench), wet bottle, HSG (hemispherical grain) deposition.
- FIG. 6 is a schematic illustration of an apparatus in accordance with the present invention for carrying out the above-described method according to the invention.
- the apparatus comprises a device 38 for generating the focused ion beams 18 , 18 ′, a device 44 for generating the focused electron beam 24 , a detector 46 for detecting interaction products that arise when the focused electron beam 24 impinges on the substrate 10 , and a control and evaluation device 48 .
- the device 44 for generating the focused electron beam 24 , the detector 46 and the control and evaluation unit 48 form for example the essential constituents of a scanning electron microscope.
- the device 38 for generating the focused ion beams 18 , 18 ′ and the device 44 for generating the focused electron beam 24 are preferably arranged in such a way that the ion beams 18 , 18 ′ and the electron beam 24 form an angle of approximately 45°.
- the substrate 10 is arranged such that it can be tilted or pivoted in the apparatus.
- the substrate 10 is preferably arranged in such a way that the focused ion beam 18 impinges on the substrate 10 perpendicularly to the surface 14 .
- the substrate 10 is tilted by the angle ⁇ toward the device 44 for generating the focused electron beam 24 in order, as described above with reference to FIG. 3 , to remove the layers from the substrate 10 which form the angle ⁇ with the normal to the area of the surface 14 of the substrate 10 .
- the detector 46 is for example a simple counter for electrons from the electron beam 24 that are backscattered from the substrate 10 or secondary electrons generated by electrons from the electron beam 24 in the substrate 10 .
- the detector is energy dispersive in order to analyze the element composition of the substrate 10 near the surface in spatially resolved fashion by means of Auger electron spectroscopy (AES).
- AES Auger electron spectroscopy
- the detector 46 is an energy dispersive detector for X-ray photons in order to analyze the element composition of the substrate 10 in spatially resolved fashion by means of energy dispersive X-ray spectroscopy (EDX), the analyzed layer being significantly thicker than in the case of AES.
- EDX energy dispersive X-ray spectroscopy
- a wavelength dispersive element for example an analyzer single crystal
- a (non-energy dispersive) detector for X-ray photons are provided in order to analyze the element composition of the substrate 10 in spatially resolved fashion by means of wavelength dispersive X-ray spectrometry (WDX).
- WDX wavelength dispersive X-ray spectrometry
- both AES and EDX and WDX offer an analysis of the element composition with a spatial resolution down to a few nm.
- XPS X-ray photoelectron spectroscopy
- FIG. 7 is a schematic illustration of an apparatus in accordance with a further exemplary embodiment of the present invention.
- the substrate 10 is not tilted, rather the device 38 for generating the focused ion bean 18 ′ is pivoted by the angle ⁇ about the interaction point 70 .
- the cut areas 22 ′ are not planar. However, it is in any event advantageous and preferred for the direction of the focused ion beam 18 ′ to run parallel to the cut area 22 ′.
- the present invention can be implemented both as a method and as an apparatus. What is more, it can be implemented as a computer program with program code for carrying out the method according to the invention if the computer program is executed on a computer.
Abstract
Description
T=A+B=A+C·sin(α)
- 10 Substrate
- 12 Depth structure
- 14 Surface of the
substrate 10 - 16 Protection cap
- 18, 18° Focused ion beam
- 20 Cutout
- 22, 22° Cut area
- 24 Electron beam
- 26 Arrow
- 28 Surface
- 38 Device for generating the
focused ion beam 18 - 44 Device for generating the
electron beam 24 - 46 Detector for detecting interaction products
- 48 Control and evaluation device
- 50 Thin wall
- 52 Cut plane
- 60 Cross-sectional area of the
depth structure 12 - 62 Zone
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE10358036.0 | 2003-12-11 | ||
DE10358036A DE10358036B4 (en) | 2003-12-11 | 2003-12-11 | Method of characterizing a depth structure in a substrate |
Publications (2)
Publication Number | Publication Date |
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US20050139768A1 US20050139768A1 (en) | 2005-06-30 |
US7005640B2 true US7005640B2 (en) | 2006-02-28 |
Family
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US11/008,643 Expired - Fee Related US7005640B2 (en) | 2003-12-11 | 2004-12-10 | Method and apparatus for the characterization of a depth structure in a substrate |
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US (1) | US7005640B2 (en) |
DE (1) | DE10358036B4 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100215868A1 (en) * | 2009-02-20 | 2010-08-26 | Kouji Iwasaki | Micro cross-section processing method |
US20210118678A1 (en) * | 2015-11-06 | 2021-04-22 | Fei Company | Method of material deposition |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10358036B4 (en) * | 2003-12-11 | 2011-05-26 | Qimonda Ag | Method of characterizing a depth structure in a substrate |
WO2013116508A1 (en) | 2012-01-31 | 2013-08-08 | University Of Utah Research Foundation | Measurement of depth and energy of buried trap states in dielectric films by single electron tunneling force spectroscopy |
US10113981B2 (en) * | 2015-07-21 | 2018-10-30 | Lockheed Martin Corporation | Real-time analysis and control of electron beam manufacturing process through x-ray computed tomography |
KR102618372B1 (en) * | 2018-10-23 | 2023-12-27 | 어플라이드 머티어리얼스, 인코포레이티드 | Focused ion beam system for large-area substrates |
Citations (7)
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US5453617A (en) * | 1993-06-21 | 1995-09-26 | Hitachi, Ltd. | Electron microscope for specimen composition and strain analysis and observation method thereof |
JPH08298275A (en) | 1995-04-27 | 1996-11-12 | Nec Corp | Scale correction method and device in cross-sectional observation by fib |
US5650621A (en) * | 1993-06-21 | 1997-07-22 | Hitachi, Ltd. | Electron microscope |
US6268608B1 (en) | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
EP1209737A2 (en) | 2000-11-06 | 2002-05-29 | Hitachi, Ltd. | Method and apparatus for specimen fabrication |
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US20050139768A1 (en) * | 2003-12-11 | 2005-06-30 | Infineon Technologies Ag | Method and apparatus for the characterization of a depth structure in a substrate |
-
2003
- 2003-12-11 DE DE10358036A patent/DE10358036B4/en not_active Expired - Fee Related
-
2004
- 2004-12-10 US US11/008,643 patent/US7005640B2/en not_active Expired - Fee Related
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US5453617A (en) * | 1993-06-21 | 1995-09-26 | Hitachi, Ltd. | Electron microscope for specimen composition and strain analysis and observation method thereof |
US5650621A (en) * | 1993-06-21 | 1997-07-22 | Hitachi, Ltd. | Electron microscope |
JPH08298275A (en) | 1995-04-27 | 1996-11-12 | Nec Corp | Scale correction method and device in cross-sectional observation by fib |
US6268608B1 (en) | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
EP1209737A2 (en) | 2000-11-06 | 2002-05-29 | Hitachi, Ltd. | Method and apparatus for specimen fabrication |
US20030098416A1 (en) | 2001-11-26 | 2003-05-29 | Dror Shemesh | System and method for directing a miller |
US20050139768A1 (en) * | 2003-12-11 | 2005-06-30 | Infineon Technologies Ag | Method and apparatus for the characterization of a depth structure in a substrate |
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Title |
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Jeremy D. Russell et al. (2003) "A Method for Exact Determination of DRAM Deep Trench Surface Area," Proceedings from the 29<SUP>th </SUP>International Symposium for Testing and Failure Analysis, Nov. 2003, pp. 140-143. |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100215868A1 (en) * | 2009-02-20 | 2010-08-26 | Kouji Iwasaki | Micro cross-section processing method |
US8304721B2 (en) * | 2009-02-20 | 2012-11-06 | Sii Nanotechnology Inc. | Micro cross-section processing method |
US20210118678A1 (en) * | 2015-11-06 | 2021-04-22 | Fei Company | Method of material deposition |
US11798804B2 (en) * | 2015-11-06 | 2023-10-24 | Fei Company | Method of material deposition |
Also Published As
Publication number | Publication date |
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DE10358036B4 (en) | 2011-05-26 |
US20050139768A1 (en) | 2005-06-30 |
DE10358036A1 (en) | 2005-07-07 |
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