US6294450B1 - Nanoscale patterning for the formation of extensive wires - Google Patents
Nanoscale patterning for the formation of extensive wires Download PDFInfo
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- US6294450B1 US6294450B1 US09/516,989 US51698900A US6294450B1 US 6294450 B1 US6294450 B1 US 6294450B1 US 51698900 A US51698900 A US 51698900A US 6294450 B1 US6294450 B1 US 6294450B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/887—Nanoimprint lithography, i.e. nanostamp
Definitions
- the present application is related to application Ser. No. 09/282,048, entitled “Chemically Synthesized and Assembled Electronic Devices”, filed on Mar. 29, 1999, which is directed to the formation of nanowires used for nanoscale computing and memory circuits.
- the present application is also related to applications Ser. No. 09/280,189, now issued as U.S. Pat. No. 6,128,214 for a “Molecular Wire Crossbar Memory;” Ser. No. 09/280,225, entitled “Molecular Wire Crossbar Interconnect (MWCI) for Signal Routing and Communications,” filed on Mar. 29, 1999; Ser. No. 09/282,045, entitled “Molecular Wire Crossbar Logic (MWCL),” filed on Mar. 29, 1999; and Ser. Nos.
- the present invention is generally directed to nanoscale computing and memory circuits, and, more particularly, to the formation of nanowires for device applications.
- the self-assembled switching elements may be integrated on top of a Si integrated circuit so that they can be driven by conventional Si electronics in the underlying substrate.
- nanoscale interconnections or wires with widths less than 10 ⁇ m and lengths exceeding 1 ⁇ m, are needed.
- the self-assembled wires connecting the conventional electronics to the self-assembled switching elements should be anchored at locations defined by the underlying circuitry and should be composed of materials compatible with Si integrated-circuit processing.
- a liquid alloy droplet containing the metal and Si is located at the tip of the wire and moves along with the growing end of the wire.
- the wires may either be formed in the gas phase or anchored at one end on a substrate; see, e.g., J. L.
- Titanium and TiSi 2 are compatible with integrated-circuit technology and are frequently used in Si circuits to reduce resistance of silicon and polycrystalline-silicon conducting regions. Although Ti forms deep levels in Si, its solubility and diffusion coefficient in Si are low, and the deep levels are not at mid-gap. With suitable handling, Ti is generally accepted in integrated-circuit facilities.
- Nanowires Long, thin “nanowires” of silicon or other materials, such as carbon, can be formed by catalyst-enhanced reaction of gaseous precursors; see, e.g., the above-mentioned patent application Ser. No. 09/282,048.
- the catalysts are often metal-containing nanoparticles either on the surface of a substrate or suspended in the reactor ambient.
- the nanowires may be usefull in electronic or other devices as either connections to an electronic element such as a switch or as electronic elements themselves; see, e.g., the above-mentioned patent applications Ser. Nos. 09/280,225, 09/282,045, 09/699,080 and 09/699,269, and U.S. Pat. No. 6,128,214.
- nanowires is important for device applications, such as logic circuits, crossbar memories, etc.
- Two lithographic fabrication approaches that have been used on larger scale devices include electron beams and X-rays.
- the typical size of an electron beam is about 20 nm, and would require rastering the beam over a surface.
- the typical size of an X-ray beam is about 50 nm, and there are no lenses available to focus an X-ray beam.
- the use of X-rays requires a synchrotron, and thus is very expensive. Neither approach permits generation and use of a beam on the order of 10 nm, which is required for nanowire fabrication.
- the present invention solves this problem, enabling the fabrication of nanowires with widths below 10 nm and with lengths extending into microscale dimensions, thereby avoiding the difficulties of rastering and the cost of a synchrotron, while permitting more accurate control of the placement of the nanowires.
- a method for forming a platen useful for forming nanoscale wires for device applications comprises:
- the pattern of the platen is then transferred into a substrate comprising a softer material to form a negative of the pattern, which is then used in further processing.
- a nano-imprinting device comprises a plurality of alternating layers of the two dissimilar materials, with the layers of one material etched relative the layers of the other material to form indentations of the one material.
- Each material independently has a thickness within a range of about 0.4 nm to several hundred nm. The device is then oriented such that the indentations are parallel to a surface to be imprinted and the pattern created by the indentations is imprinted into the surface.
- FIG. 1 is a cross-sectional view of a plurality of alternating layers of two materials, forming a stack on a major surface of a substrate and showing a cleaving surface;
- FIG. 2 is a cross-sectional view of the stack rotated 90 degrees so as to place the cleaved surface facing downward;
- FIG. 3 is a view similar to that of FIG. 2, but showing the effects of partially etching one of the materials relative to the other;
- FIG. 4 is a view similar to that of FIG. 3, showing use of the etched stack as a molding master for nano-imprinting in a material that is softer than the etched material, depicting one embodiment of performing the nano-imprinting, using a thin (nanometer scale) metal layer on a substrate;
- FIG. 5 is a view similar to that of FIG. 4, showing the negative formed in the softer material
- FIG. 6 is a view similar to that of FIG. 5, following etching of the thin polymer residual layers to expose portions of the thin metal layer;
- FIG. 7 is a view similar to that of FIG. 6, following etching of the exposed portions of the thin metal layer.
- FIG. 8 is a view similar to that of FIG. 7, following removal of the remaining softer material to expose a plurality of parallel nano-wires.
- Nanoscale strips for device applications are fabricated by depositing composite thin films with different materials A and B, as illustrated in FIG. 1 .
- a plurality of alternating layers of A material 10 and B material 12 are deposited on a major surface 14 a of a substrate 14 to form a stack 16 , also having a major surface 16 a , parallel to the major surface of the substrate.
- the material having the least lattice mis-match with the substrate 14 is deposited in order to keep a smooth growth surface and flat, sharp interfaces between materials 10 and 12 .
- the layers 10 , 12 are then cleaved along a line 18 normal to the major surface 16 a of the stack 16 to expose the cross-section, as shown in FIG. 2 .
- Cleaving is performed by any conventional technique useful in cleaving a plurality of alternating layers of dissimilar materials. Such techniques are well-known in the art for the materials used for layers A and B, which are discussed below.
- the material B, layer 12 is then etched to a certain depth, as shown in FIG. 3, and as more fully described below, thereby providing the surface with extensive strips of indentations, shown by arrows 20 .
- the second, fourth, sixth, etc. layers from the substrate are etched.
- the indentations 20 can be used as a platen 16 ′ to mold a master in layer 22 for nano-imprinting technology, as illustrated in FIG. 4 .
- the layer 22 may comprise a thermoplastic polymer, for example, formed on a substrate 24 , which may comprise a semiconductor or metal material.
- the pattern of the polymer nanowires formed in layer 22 shown in FIG. 5, can then be transferred to metal and/or semiconductor nanowires by using conventional lithographic and ink printing processes; see, e.g., X. Sun et al, “Multilayer resist methods for nanoimprint lithography on nonflat surfaces”, Journal of Vacuum Science and Technology , Vol. B16, No. 6, pp. 3922-3925 (1998).
- etching rate of one material relative to the other is immaterial, except that the B material must etch at a faster rate than the A material.
- a differential etching rate of more than five times faster is employed in order to minimize the amount of etching of the A material.
- the concentration of silicon ranges from about 70 to 90 atomic percent (at %), and the balance (30 to 10 at %) is germanium.
- the concentration of Al ranges from a few percent to 100 at % (AlAs).
- the alloy is represented as Al x Ga 1 ⁇ x As, where x ranges from a few at % to 100 at %.
- the two layers 10 , 12 each independently have a thickness range of about 0.4 nm to several hundred nm, and are conveniently deposited by chemical vapor deposition (CVD), using organo-silanes and organo-germanes (for the Si/Si—Ge system) or appropriate precursors for AlGaAs and GaAs, as is well-known.
- Molecular beam epitaxy (MBE) may be alternatively employed in the depositions of the two materials, using well-known procedures. The particular method of forming the A and B layers does not form a part of the present invention.
- the two materials A and B are conveniently deposited on a semiconductor substrate, silicon in the case of the Si/Si—Ge system or gallium arsenide in the case of the AlGaAs/GaAs system (see Table I).
- a semiconductor substrate silicon in the case of the Si/Si—Ge system or gallium arsenide in the case of the AlGaAs/GaAs system (see Table I).
- lattice mis-match is always a consideration, and selection of substrate and materials A and B will be dictated by minimizing the strain resulting from lattice mis-match. Such a determination is easily within the ability of the person skilled in this art, and therefore does not constitute undue experimentation.
- Layers of the A and B materials are deposited on the substrate in alternating fashion, each layer having a thickness within the range listed above.
- the number of A and B layers depends on the requirement for the devices - a large number of devices requires many wires in parallel, while a smaller number of devices requires fewer wires in parallel.
- the number of A and B layers is within the range of a few layers of each material to several thousand layers of each material.
- the A and B layers can be formed with varying thicknesses, for making nonperiodic arrays of wires.
- wires and spacings of different widths and a periodic structures may be formed in accordance with the teachings of the present invention.
- Such a periodic arrays are useful, for example, for making blocks of crossbars with larger wires for multiplexing.
- the etching of the two materials A and B is advantageously performed by chemical etching, and known etchants are employed that have the requisite etch rate differential between the two materials used.
- the depth of etching (indentations 20 ) may range from several nm to several hundred nm, and depends on the requirement of the height of the nanowires ultimately formed by nano-imprinting.
- Nano-imprinting involves pressing a platen 16 ′ into a softer material 22 , such as a thermoplastic polymer, thereby transferring a negative of the pattern formed by the indentations 18 into the softer material.
- a softer material 22 such as a thermoplastic polymer
- suitable thermoplastic materials include polymethyl methacrylate (PMMA) and methyl methacrylate (MMA).
- PMMA polymethyl methacrylate
- MMA methyl methacrylate
- MMA methyl methacrylate
- other thermoplastic materials and, indeed, materials other than thermoplastic materials may be employed in the practice of the present invention, so long as the material 22 is softer than that of the platen 16 ′.
- the resulting imprinted pattern, imprinted by the platen 16 ′ into the softer material 22 is then transferred into a substrate, e.g., semiconductor or metal, as a positive image of the platen.
- a substrate e.g., semiconductor or metal
- the transferred pattern can then be used for further processing in the formation of nanoscale devices.
- FIGS. 4-8 depict one such method, but it will be understood that the present invention is not so limited.
- a thin metal layer 26 is first formed on the substrate, followed by formation of the soft material thereon.
- the thickness of the thin metal layer 26 is in the nanoscale region, that is, on the order of several nanometers to hundreds of nanometers.
- the thinner portions of the soft material 22 are removed, such as by etching with an etchant that removes the soft material but does not etch the metal layer 26 , thereby exposing portions of the thin metal layer. This step is depicted in FIG. 6 .
- the exposed portions of the metal layer 26 are removed, leaving behind those portions 26 ′ of the metal layer covered by the soft material 22 , as shown in FIG. 7 .
- the remaining soft material 22 is then removed, leaving a plurality of parallel metal lines 26 ′ on the surface of the substrate 24 .
- the metal lines 26 ′ being of nanoscale thickness, are then further processed to form nanoscale devices, as taught elsewhere.
- the foregoing method is directed to the formation of a plurality of alternating layers 10 , 12 , used to form a platen 16 ′.
- the particular method of forming the plurality of alternating layers 10 , 12 is immaterial to the method of the present invention, although two processes, CVD and MBE, are mentioned above.
- An alternate technique, called “spontaneous ordering” is an example of another process useful in the practice of the present invention. Spontaneous ordering is discussed, for example, by Z. Lilienthal-Weber et al, “Spontaneous Ordering in Bulk GaN:Mg Samples”, Physical Review Letters , Vol. 83, No. 12, pp. 2370-2373 (Sept. 20, 1999).
- one material with a homogeneous structure (or concentration) can decompose and form a superlattice with alternating layers of two or more dissimilar materials with different structures (or concentrations).
- the magnesium atoms in GaN tend to concentrate and form regular periodic thin Mg-rich layers buried in GaN.
- These periodic superlattices formed by spontaneous ordering can also be to form the platen 16 ′.
- the method of nanoscale patterning for the formation of extensive nanowires is expected to find use in nanoscale computing and memory circuits.
Abstract
Description
TABLE I |
Examples of A and B Materials. |
A MATERIAL | B MATERIAL | SUBSTRATE |
Si | Si—Ge alloy | Si |
AlGaAs | GaAs | GaAs |
Claims (16)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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US09/516,989 US6294450B1 (en) | 2000-03-01 | 2000-03-01 | Nanoscale patterning for the formation of extensive wires |
JP2001564392A JP2004500250A (en) | 2000-03-01 | 2001-02-22 | Nanoscale patterning to form a wide range of wires |
EP01912948A EP1301944A2 (en) | 2000-03-01 | 2001-02-22 | Nanoscale patterning for the formation of extensive wires |
KR1020027011346A KR100744884B1 (en) | 2000-03-01 | 2001-02-22 | Nanoscale patterning for the formation of extensive wires |
PCT/US2001/005734 WO2001065600A2 (en) | 2000-03-01 | 2001-02-22 | Nanoscale patterning for the formation of extensive wires |
US09/886,355 US6407443B2 (en) | 2000-03-01 | 2001-06-20 | Nanoscale patterning for the formation of extensive wires |
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US09/516,989 US6294450B1 (en) | 2000-03-01 | 2000-03-01 | Nanoscale patterning for the formation of extensive wires |
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US09/886,355 Division US6407443B2 (en) | 2000-03-01 | 2001-06-20 | Nanoscale patterning for the formation of extensive wires |
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US09/516,989 Expired - Lifetime US6294450B1 (en) | 2000-03-01 | 2000-03-01 | Nanoscale patterning for the formation of extensive wires |
US09/886,355 Expired - Lifetime US6407443B2 (en) | 2000-03-01 | 2001-06-20 | Nanoscale patterning for the formation of extensive wires |
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EP (1) | EP1301944A2 (en) |
JP (1) | JP2004500250A (en) |
KR (1) | KR100744884B1 (en) |
WO (1) | WO2001065600A2 (en) |
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Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US7811914B1 (en) | 2006-04-20 | 2010-10-12 | Quick Nathaniel R | Apparatus and method for increasing thermal conductivity of a substrate |
US8617669B1 (en) | 2006-04-20 | 2013-12-31 | Partial Assignment to University of Central Florida | Laser formation of graphene |
US8067303B1 (en) | 2006-09-12 | 2011-11-29 | Partial Assignment University of Central Florida | Solid state energy conversion device |
US7741204B2 (en) * | 2006-10-30 | 2010-06-22 | Hewlett-Packard Development Company, L.P. | Mixed-scale electronic interfaces |
US8114693B1 (en) | 2007-09-18 | 2012-02-14 | Partial Assignment University of Central Florida | Method of fabricating solid state gas dissociating device by laser doping |
US20090196826A1 (en) * | 2007-12-18 | 2009-08-06 | Board Of Regents, The University Of Texas System | Compositions and methods of making non-spherical micro- and nano-particles |
US8273591B2 (en) * | 2008-03-25 | 2012-09-25 | International Business Machines Corporation | Super lattice/quantum well nanowires |
KR20110108342A (en) * | 2008-12-02 | 2011-10-05 | 유니버시티 오브 센트럴 플로리다 | Energy conversion device |
US9059079B1 (en) | 2012-09-26 | 2015-06-16 | Ut-Battelle, Llc | Processing of insulators and semiconductors |
US9620667B1 (en) | 2013-12-10 | 2017-04-11 | AppliCote Associates LLC | Thermal doping of materials |
US9601641B1 (en) | 2013-12-10 | 2017-03-21 | AppliCote Associates, LLC | Ultra-high pressure doping of materials |
KR101588577B1 (en) | 2014-06-11 | 2016-01-28 | 한국표준과학연구원 | A fabrication method of vertically aligned GaAs semiconductor nanowire arrays with large area |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4748132A (en) * | 1985-12-16 | 1988-05-31 | Hitachi, Ltd. | Micro fabrication process for semiconductor structure using coherent electron beams |
JPH04176116A (en) * | 1990-11-08 | 1992-06-23 | Olympus Optical Co Ltd | Semiconductor crystal and manufacture thereof |
US5362972A (en) * | 1990-04-20 | 1994-11-08 | Hitachi, Ltd. | Semiconductor device using whiskers |
US5705321A (en) * | 1993-09-30 | 1998-01-06 | The University Of New Mexico | Method for manufacture of quantum sized periodic structures in Si materials |
US5747180A (en) * | 1995-05-19 | 1998-05-05 | University Of Notre Dame Du Lac | Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays |
US6128214A (en) * | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
US6165911A (en) * | 1999-12-29 | 2000-12-26 | Calveley; Peter Braden | Method of patterning a metal layer |
US6231744B1 (en) * | 1997-04-24 | 2001-05-15 | Massachusetts Institute Of Technology | Process for fabricating an array of nanowires |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5210425A (en) * | 1991-08-30 | 1993-05-11 | E. I. Du Pont De Nemours And Company | Etching of nanoscale structures |
US5753948A (en) * | 1996-11-19 | 1998-05-19 | International Business Machines Corporation | Advanced damascene planar stack capacitor fabrication method |
US6140767A (en) * | 1997-04-25 | 2000-10-31 | Sarnoff Corporation | Plasma display having specific substrate and barrier ribs |
US6016269A (en) * | 1998-09-30 | 2000-01-18 | Motorola, Inc. | Quantum random address memory with magnetic readout and/or nano-memory elements |
KR20010011136A (en) * | 1999-07-26 | 2001-02-15 | 정선종 | Structure of a triode-type field emitter using nanostructures and method for fabricating the same |
-
2000
- 2000-03-01 US US09/516,989 patent/US6294450B1/en not_active Expired - Lifetime
-
2001
- 2001-02-22 JP JP2001564392A patent/JP2004500250A/en active Pending
- 2001-02-22 EP EP01912948A patent/EP1301944A2/en not_active Withdrawn
- 2001-02-22 KR KR1020027011346A patent/KR100744884B1/en active IP Right Grant
- 2001-02-22 WO PCT/US2001/005734 patent/WO2001065600A2/en active Application Filing
- 2001-06-20 US US09/886,355 patent/US6407443B2/en not_active Expired - Lifetime
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4748132A (en) * | 1985-12-16 | 1988-05-31 | Hitachi, Ltd. | Micro fabrication process for semiconductor structure using coherent electron beams |
US5362972A (en) * | 1990-04-20 | 1994-11-08 | Hitachi, Ltd. | Semiconductor device using whiskers |
JPH04176116A (en) * | 1990-11-08 | 1992-06-23 | Olympus Optical Co Ltd | Semiconductor crystal and manufacture thereof |
US5705321A (en) * | 1993-09-30 | 1998-01-06 | The University Of New Mexico | Method for manufacture of quantum sized periodic structures in Si materials |
US5747180A (en) * | 1995-05-19 | 1998-05-05 | University Of Notre Dame Du Lac | Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays |
US6231744B1 (en) * | 1997-04-24 | 2001-05-15 | Massachusetts Institute Of Technology | Process for fabricating an array of nanowires |
US6128214A (en) * | 1999-03-29 | 2000-10-03 | Hewlett-Packard | Molecular wire crossbar memory |
US6165911A (en) * | 1999-12-29 | 2000-12-26 | Calveley; Peter Braden | Method of patterning a metal layer |
Non-Patent Citations (7)
Title |
---|
A.M. Morales et al, "A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires", Science, vol. 279, pp. 208-211 (Jan. 9, 1998). |
C.P. Collier et al, "Electronically configurable Molecular-Based Logic Gates", Science, vol. 285, pp. 391-394 (Jul. 16, 1999). |
J. Westwater et al, "Growth of silicon nanowires via gold/silane vapor-liquid-solid reaction", Journal of Vacuum Science and Technology B, vol. 15, pp. 554-557 (May/Jun. 1997). |
J.L. Liu et al, "Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate", Superlattices and Microstructures, vol. 25, pp. 477-479 (1999). |
Krauss, P., et al., Fabrication of Nanodevices Using Sub-25 nm Imprint Lithography, Device Research Conference, 1996, Digest. 54th Annual, 1996, pp. 194-195.* |
X. Sun et al, "Multilayer resist methods for nanoimprint lithography on nonflat surfaces", Journal of Vacuum Science and Technology, vol. B16, No. 6, pp. 3922-3925 (1998). |
Z. Lilienthal-Weber et al, "Spontaneous Ordering in Bulk GaN:Mg Samples", Physical Review Letters, vol. 83, No. 12, pp. 2370-2373 (Sep. 20, 1999). |
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US20090173931A1 (en) * | 2002-04-02 | 2009-07-09 | Nanosys, Inc. | Methods of Making, Positioning and Orienting Nanostructures, Nanostructure Arrays and Nanostructure Devices |
WO2003085700A2 (en) * | 2002-04-02 | 2003-10-16 | Nanosys, Inc. | Methods of making, positioning and orienting nanostructures, nanostructure arrays and nanostructure devices |
US7151209B2 (en) | 2002-04-02 | 2006-12-19 | Nanosys, Inc. | Methods of making, positioning and orienting nanostructures, nanostructure arrays and nanostructure devices |
US20030194875A1 (en) * | 2002-04-13 | 2003-10-16 | The Board Of Trustees Of The University Of Illinois | Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies |
US6762131B2 (en) | 2002-04-13 | 2004-07-13 | The Board Of Trustees Of The University Of Illinois | Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies |
US7752151B2 (en) | 2002-06-05 | 2010-07-06 | Knowmtech, Llc | Multilayer training in a physical neural network formed utilizing nanotechnology |
US20090228415A1 (en) * | 2002-06-05 | 2009-09-10 | Alex Nugent | Multilayer training in a physical neural network formed utilizing nanotechnology |
WO2004012234A3 (en) * | 2002-07-30 | 2004-04-01 | Univ California | Superlattice nanopatterning of wires and complex patterns |
WO2004012234A2 (en) * | 2002-07-30 | 2004-02-05 | The Regents Of The University Of California | Superlattice nanopatterning of wires and complex patterns |
US20100258785A1 (en) * | 2002-07-30 | 2010-10-14 | California Institute Of Technology | Superlattice nanopatterning of wires and complex patterns |
US20050250276A1 (en) * | 2002-07-30 | 2005-11-10 | Heath James R | Superlattice nanopatterning of wires and complex patterns |
US7906775B2 (en) | 2002-07-30 | 2011-03-15 | California Institute Of Technology | Superlattice nanopatterning of wires and complex patterns |
US7161168B2 (en) * | 2002-07-30 | 2007-01-09 | The Regents Of The University Of California | Superlattice nanopatterning of wires and complex patterns |
US7276172B2 (en) * | 2002-08-08 | 2007-10-02 | Sony Deutschland Gmbh | Method for preparing a nanowire crossbar structure and use of a structure prepared by this method |
US20040028812A1 (en) * | 2002-08-08 | 2004-02-12 | Jurina Wessels | Method for preparing a nanowire crossbar structure and use of a structure prepared by this method |
US20090228416A1 (en) * | 2002-08-22 | 2009-09-10 | Alex Nugent | High density synapse chip using nanoparticles |
US7827131B2 (en) | 2002-08-22 | 2010-11-02 | Knowm Tech, Llc | High density synapse chip using nanoparticles |
US20040041617A1 (en) * | 2002-08-30 | 2004-03-04 | Snider Gregory S. | Configurable molecular switch array |
US8004876B2 (en) | 2002-08-30 | 2011-08-23 | Hewlett-Packard Development Company, L.P. | Configurable molecular switch array |
US20040061151A1 (en) * | 2002-09-27 | 2004-04-01 | James Stasiak | Nanometer-scale semiconductor devices and method of making |
US6762094B2 (en) * | 2002-09-27 | 2004-07-13 | Hewlett-Packard Development Company, L.P. | Nanometer-scale semiconductor devices and method of making |
US7691201B2 (en) * | 2002-10-28 | 2010-04-06 | Hewlett-Packard Development Company, L.P. | Method of forming three-dimensional nanocrystal array |
US20040082178A1 (en) * | 2002-10-28 | 2004-04-29 | Kamins Theodore I. | Method of forming catalyst nanoparticles for nanowire growth and other applications |
US20040079278A1 (en) * | 2002-10-28 | 2004-04-29 | Kamins Theodore I. | Method of forming three-dimensional nanocrystal array |
US7378347B2 (en) * | 2002-10-28 | 2008-05-27 | Hewlett-Packard Development Company, L.P. | Method of forming catalyst nanoparticles for nanowire growth and other applications |
US20080296785A1 (en) * | 2002-10-28 | 2008-12-04 | Kamins Theodore I | Method of forming catalyst nanoparticles for nanowire growth and other applications |
US20040110856A1 (en) * | 2002-12-04 | 2004-06-10 | Young Jung Gun | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
US20090159567A1 (en) * | 2002-12-04 | 2009-06-25 | Gun Young Jung | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
US7750059B2 (en) | 2002-12-04 | 2010-07-06 | Hewlett-Packard Development Company, L.P. | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
US20130260058A1 (en) * | 2002-12-14 | 2013-10-03 | Plastic Logic Limited | Electronic devices |
US20060076644A1 (en) * | 2002-12-20 | 2006-04-13 | Meyer Neal W | Nanowire filament |
US6936496B2 (en) | 2002-12-20 | 2005-08-30 | Hewlett-Packard Development Company, L.P. | Nanowire filament |
US7294899B2 (en) | 2002-12-20 | 2007-11-13 | Hewlett-Packard Development Company, L.P. | Nanowire Filament |
US20090043722A1 (en) * | 2003-03-27 | 2009-02-12 | Alex Nugent | Adaptive neural network utilizing nanotechnology-based components |
US8156057B2 (en) | 2003-03-27 | 2012-04-10 | Knowm Tech, Llc | Adaptive neural network utilizing nanotechnology-based components |
US20040214447A1 (en) * | 2003-04-24 | 2004-10-28 | James Stasiak | Sensor produced using imprint lithography |
US7410904B2 (en) | 2003-04-24 | 2008-08-12 | Hewlett-Packard Development Company, L.P. | Sensor produced using imprint lithography |
US20050123674A1 (en) * | 2003-05-05 | 2005-06-09 | James Stasiak | Imprint lithography for superconductor devices |
US6926921B2 (en) | 2003-05-05 | 2005-08-09 | Hewlett-Packard Development Company, L.P. | Imprint lithography for superconductor devices |
US20050197254A1 (en) * | 2003-05-05 | 2005-09-08 | James Stasiak | Imprint lithography for superconductor devices |
US7256435B1 (en) | 2003-06-02 | 2007-08-14 | Hewlett-Packard Development Company, L.P. | Multilevel imprint lithography |
US20100112809A1 (en) * | 2003-06-02 | 2010-05-06 | Pavel Kornilovich | Multilevel imprint lithography |
US7803712B2 (en) | 2003-06-02 | 2010-09-28 | Hewlett-Packard Development Company, L.P. | Multilevel imprint lithography |
US8329527B2 (en) | 2003-07-15 | 2012-12-11 | Samsung Electronics Co., Ltd. | Methods of fomring array of nanoscopic MOSFET transistors |
US20050219936A1 (en) * | 2003-07-15 | 2005-10-06 | Ghozeil Adam L | Array of nanoscopic mosfet transistors and fabrication methods |
US7005335B2 (en) | 2003-07-15 | 2006-02-28 | Hewlett-Packard Development, L.P. | Array of nanoscopic mosfet transistors and fabrication methods |
US20110159648A1 (en) * | 2003-07-15 | 2011-06-30 | Ghozeil Adam L | Methods of fomring array of nanoscopic mosfet transistors |
US7902015B2 (en) | 2003-07-15 | 2011-03-08 | Samsung Electronics Co., Ltd. | Array of nanoscopic MOSFET transistors and fabrication methods |
US20050014385A1 (en) * | 2003-07-15 | 2005-01-20 | Ghozeil Adam L. | Array of nanoscopic mosfet transistors and fabrication methods |
US7426501B2 (en) | 2003-07-18 | 2008-09-16 | Knowntech, Llc | Nanotechnology neural network methods and systems |
US20050015351A1 (en) * | 2003-07-18 | 2005-01-20 | Alex Nugent | Nanotechnology neural network methods and systems |
US7445742B2 (en) | 2003-08-15 | 2008-11-04 | Hewlett-Packard Development Company, L.P. | Imprinting nanoscale patterns for catalysis and fuel cells |
US20050037916A1 (en) * | 2003-08-15 | 2005-02-17 | Yong Chen | Imprinting nanoscale patterns for catalysis and fuel cells |
US7241479B2 (en) | 2003-08-22 | 2007-07-10 | Clemson University | Thermal CVD synthesis of nanostructures |
US20050042465A1 (en) * | 2003-08-22 | 2005-02-24 | Clemson Unviersity | Thermal CVD synthesis of nanostructures |
US20070034909A1 (en) * | 2003-09-22 | 2007-02-15 | James Stasiak | Nanometer-scale semiconductor devices and method of making |
US20090165320A1 (en) * | 2003-09-23 | 2009-07-02 | Desimone Joseph M | Photocurable perfluoropolyethers for use as novel materials in microfluidic devices |
US8268446B2 (en) | 2003-09-23 | 2012-09-18 | The University Of North Carolina At Chapel Hill | Photocurable perfluoropolyethers for use as novel materials in microfluidic devices |
US20050074911A1 (en) * | 2003-10-07 | 2005-04-07 | Pavel Kornilovich | Fabricationof nano-object array |
US7132298B2 (en) | 2003-10-07 | 2006-11-07 | Hewlett-Packard Development Company, L.P. | Fabrication of nano-object array |
DE112004001881B4 (en) * | 2003-10-07 | 2017-01-26 | Samsung Electronics Co., Ltd. | Process for the production of nanowires |
US7223611B2 (en) | 2003-10-07 | 2007-05-29 | Hewlett-Packard Development Company, L.P. | Fabrication of nanowires |
US20050072967A1 (en) * | 2003-10-07 | 2005-04-07 | Pavel Kornilovich | Fabrication of nanowires |
US8263129B2 (en) | 2003-12-19 | 2012-09-11 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro-and nano-structures using soft or imprint lithography |
US20090028910A1 (en) * | 2003-12-19 | 2009-01-29 | University Of North Carolina At Chapel Hill | Methods for Fabrication Isolated Micro-and Nano-Structures Using Soft or Imprint Lithography |
US8992992B2 (en) | 2003-12-19 | 2015-03-31 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro- or nano-structures using soft or imprint lithography |
US9040090B2 (en) | 2003-12-19 | 2015-05-26 | The University Of North Carolina At Chapel Hill | Isolated and fixed micro and nano structures and methods thereof |
US11642313B2 (en) | 2003-12-19 | 2023-05-09 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro- or nano-structures using soft or imprint lithography |
US20090061152A1 (en) * | 2003-12-19 | 2009-03-05 | Desimone Joseph M | Methods for fabricating isolated micro- and nano- structures using soft or imprint lithography |
US8420124B2 (en) | 2003-12-19 | 2013-04-16 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro- and nano-structures using soft or imprint lithography |
US9902818B2 (en) | 2003-12-19 | 2018-02-27 | The University Of North Carolina At Chapel Hill | Isolated and fixed micro and nano structures and methods thereof |
US9877920B2 (en) | 2003-12-19 | 2018-01-30 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro- or nano-structures using soft or imprint lithography |
US10842748B2 (en) | 2003-12-19 | 2020-11-24 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro- or nano-structures using soft or imprint lithography |
US10517824B2 (en) | 2003-12-19 | 2019-12-31 | The University Of North Carolina At Chapel Hill | Methods for fabricating isolated micro- or nano-structures using soft or imprint lithography |
US20060021967A1 (en) * | 2004-01-27 | 2006-02-02 | Heon Lee | Imprint stamp |
US7462292B2 (en) | 2004-01-27 | 2008-12-09 | Hewlett-Packard Development Company, L.P. | Silicon carbide imprint stamp |
US20050161431A1 (en) * | 2004-01-27 | 2005-07-28 | Heon Lee | Silicon carbide imprint stamp |
US7060625B2 (en) | 2004-01-27 | 2006-06-13 | Hewlett-Packard Development Company, L.P. | Imprint stamp |
US8158728B2 (en) | 2004-02-13 | 2012-04-17 | The University Of North Carolina At Chapel Hill | Methods and materials for fabricating microfluidic devices |
US8444899B2 (en) | 2004-02-13 | 2013-05-21 | The University Of North Carolina At Chapel Hill | Methods and materials for fabricating microfluidic devices |
US20070275193A1 (en) * | 2004-02-13 | 2007-11-29 | Desimone Joseph M | Functional Materials and Novel Methods for the Fabrication of Microfluidic Devices |
US20050248003A1 (en) * | 2004-02-17 | 2005-11-10 | Leonid Tsybeskov | One dimensional nanostructures for vertical heterointegration on a silicon platform and method for making same |
US7407738B2 (en) | 2004-04-02 | 2008-08-05 | Pavel Kornilovich | Fabrication and use of superlattice |
US20050221235A1 (en) * | 2004-04-02 | 2005-10-06 | Pavel Kornilovich | Fabrication and use of superlattice |
US7368395B2 (en) | 2004-04-16 | 2008-05-06 | Hewlett-Packard Development Company, L.P. | Method for fabricating a nano-imprinting mold |
US7141866B1 (en) | 2004-04-16 | 2006-11-28 | Hewlett-Packard Development Company, L.P. | Apparatus for imprinting lithography and fabrication thereof |
US20070066070A1 (en) * | 2004-04-16 | 2007-03-22 | Islam M S | Apparatus for imprinting lithography and fabrication thereof |
US7727820B2 (en) | 2004-04-30 | 2010-06-01 | Hewlett-Packard Development Company, L.P. | Misalignment-tolerant methods for fabricating multiplexing/demultiplexing architectures |
US20050245014A1 (en) * | 2004-04-30 | 2005-11-03 | Xiaofeng Yang | Field-effect-transistor multiplexing/demultiplexing architectures and methods of forming the same |
US20050245057A1 (en) * | 2004-04-30 | 2005-11-03 | Xiaofeng Yang | Misalignment-tolerant methods for fabricating multiplexing/demultiplexing architectures |
US20050242404A1 (en) * | 2004-04-30 | 2005-11-03 | Xiaofeng Yang | Misalignment-tolerant multiplexing/demultiplexing architectures |
US20070241413A1 (en) * | 2004-04-30 | 2007-10-18 | Xiaofeng Yang | Field-Effect-Transistor Multiplexing/Demultiplexing Architectures and Methods of Forming The Same |
US20050241959A1 (en) * | 2004-04-30 | 2005-11-03 | Kenneth Ward | Chemical-sensing devices |
US7683435B2 (en) | 2004-04-30 | 2010-03-23 | Hewlett-Packard Development Company, L.P. | Misalignment-tolerant multiplexing/demultiplexing architectures |
US7633098B2 (en) | 2004-04-30 | 2009-12-15 | Hewlett-Packard Development Company, L.P. | Field-effect-transistor multiplexing/demultiplexing architectures |
US7247531B2 (en) | 2004-04-30 | 2007-07-24 | Hewlett-Packard Development Company, L.P. | Field-effect-transistor multiplexing/demultiplexing architectures and methods of forming the same |
US20050281075A1 (en) * | 2004-06-17 | 2005-12-22 | Zhizhang Chen | Semiconductor storage device |
US7002820B2 (en) | 2004-06-17 | 2006-02-21 | Hewlett-Packard Development Company, L.P. | Semiconductor storage device |
US20060012079A1 (en) * | 2004-07-16 | 2006-01-19 | Gun-Young Jung | Formation of a self-assembled release monolayer in the vapor phase |
US20060024814A1 (en) * | 2004-07-29 | 2006-02-02 | Peters Kevin F | Aptamer-functionalized electrochemical sensors and methods of fabricating and using the same |
US20060046069A1 (en) * | 2004-08-30 | 2006-03-02 | Jung Gun Y | Increasing adhesion in an imprinting procedure |
US7252862B2 (en) | 2004-08-30 | 2007-08-07 | Hewlett-Packard Development Company, L.P. | Increasing adhesion in an imprinting procedure |
US20070259189A1 (en) * | 2004-08-30 | 2007-11-08 | Jung Gun Y | Increasing adhesion in an imprinting procedure |
US20070164476A1 (en) * | 2004-09-01 | 2007-07-19 | Wei Wu | Contact lithography apparatus and method employing substrate deformation |
US20060043626A1 (en) * | 2004-09-01 | 2006-03-02 | Wei Wu | Imprint lithography apparatus and method employing an effective pressure |
US7641468B2 (en) | 2004-09-01 | 2010-01-05 | Hewlett-Packard Development Company, L.P. | Imprint lithography apparatus and method employing an effective pressure |
US20060063368A1 (en) * | 2004-09-17 | 2006-03-23 | Shashank Sharma | Reduction of a feature dimension in a nano-scale device |
US7189635B2 (en) | 2004-09-17 | 2007-03-13 | Hewlett-Packard Development Company, L.P. | Reduction of a feature dimension in a nano-scale device |
US20060157684A1 (en) * | 2004-12-15 | 2006-07-20 | The Regents Of The University Of California | Thin film multilayer with nanolayers addressable from the macroscale |
US20060164634A1 (en) * | 2005-01-27 | 2006-07-27 | Kamins Theodore I | Nano-enhanced Raman spectroscopy-active nanostructures including elongated components and methods of making the same |
US7236242B2 (en) | 2005-01-27 | 2007-06-26 | Hewlett-Packard Development Company, L.P. | Nano-enhanced Raman spectroscopy-active nanostructures including elongated components and methods of making the same |
US20090138419A1 (en) * | 2005-01-31 | 2009-05-28 | Alex Nugent | Fractal memory and computational methods and systems based on nanotechnology |
US7827130B2 (en) | 2005-01-31 | 2010-11-02 | Knowm Tech, Llc | Fractal memory and computational methods and systems based on nanotechnology |
US7502769B2 (en) | 2005-01-31 | 2009-03-10 | Knowmtech, Llc | Fractal memory and computational methods and systems based on nanotechnology |
US20060184466A1 (en) * | 2005-01-31 | 2006-08-17 | Alex Nugent | Fractal memory and computational methods and systems based on nanotechnology |
US20090027603A1 (en) * | 2005-02-03 | 2009-01-29 | Samulski Edward T | Low Surface Energy Polymeric Material for Use in Liquid Crystal Displays |
US20060194420A1 (en) * | 2005-02-28 | 2006-08-31 | Pavel Kornilovich | Multilayer film |
US7375012B2 (en) | 2005-02-28 | 2008-05-20 | Pavel Kornilovich | Method of forming multilayer film |
US7847368B2 (en) | 2005-02-28 | 2010-12-07 | Hewlett-Packard Development Company, L.P. | Multilayer film with stack of nanometer-scale thicknesses |
US20090126977A1 (en) * | 2005-02-28 | 2009-05-21 | Paval Kornilovich | Multilayer film |
US20060198919A1 (en) * | 2005-03-01 | 2006-09-07 | Tong William M | Method of fabricating a mold for imprinting a structure |
US7291282B2 (en) | 2005-03-01 | 2007-11-06 | Hewlett-Packard Development Company, L.P. | Method of fabricating a mold for imprinting a structure |
US7409375B2 (en) | 2005-05-23 | 2008-08-05 | Knowmtech, Llc | Plasticity-induced self organizing nanotechnology for the extraction of independent components from a data stream |
US20070005532A1 (en) * | 2005-05-23 | 2007-01-04 | Alex Nugent | Plasticity-induced self organizing nanotechnology for the extraction of independent components from a data stream |
US7420396B2 (en) | 2005-06-17 | 2008-09-02 | Knowmtech, Llc | Universal logic gate utilizing nanotechnology |
US20070176643A1 (en) * | 2005-06-17 | 2007-08-02 | Alex Nugent | Universal logic gate utilizing nanotechnology |
US7599895B2 (en) | 2005-07-07 | 2009-10-06 | Knowm Tech, Llc | Methodology for the configuration and repair of unreliable switching elements |
US20090304992A1 (en) * | 2005-08-08 | 2009-12-10 | Desimone Joseph M | Micro and Nano-Structure Metrology |
US7766640B2 (en) | 2005-08-12 | 2010-08-03 | Hewlett-Packard Development Company, L.P. | Contact lithography apparatus, system and method |
US20100021577A1 (en) * | 2005-08-12 | 2010-01-28 | Stewart Duncan R | Contact lithography apparatus, system and method |
US20070105353A1 (en) * | 2005-11-09 | 2007-05-10 | Tong William M | Metallic quantum dots fabricated by a superlattice structure |
US7309642B2 (en) | 2005-11-09 | 2007-12-18 | Hewlett-Packard Development Company, L.P. | Metallic quantum dots fabricated by a superlattice structure |
US7570355B2 (en) | 2006-01-27 | 2009-08-04 | Hewlett-Packard Development Company, L.P. | Nanowire heterostructures and methods of forming the same |
US20070177139A1 (en) * | 2006-01-27 | 2007-08-02 | Kamins Theodore I | Nanowire heterostructures and methods of forming the same |
WO2007106911A2 (en) * | 2006-03-16 | 2007-09-20 | The Board Of Trustees Of The University Of Illinois | Pattern transfer by solid state electrochemical stamping |
US20090050487A1 (en) * | 2006-03-16 | 2009-02-26 | Fang Nicholas X | Direct Nanoscale Patterning of Metals Using Polymer Electrolytes |
US7998330B2 (en) | 2006-03-16 | 2011-08-16 | The Board Of Trustees Of The University Of Illinois | Direct nanoscale patterning of metals using polymer electrolytes |
WO2007106911A3 (en) * | 2006-03-16 | 2008-04-03 | Univ Illinois | Pattern transfer by solid state electrochemical stamping |
US20070215480A1 (en) * | 2006-03-16 | 2007-09-20 | Fang Nicholas X | Pattern transfer by solid state electrochemical stamping |
US9903862B2 (en) | 2006-06-12 | 2018-02-27 | President And Fellows Of Harvard College | Nanosensors and related technologies |
DE112007001740T5 (en) | 2006-07-24 | 2009-06-18 | Hewlett-Packard Development Company, L.P., Houston | Alignment for contact lithography |
US20080084006A1 (en) * | 2006-10-10 | 2008-04-10 | Jun Gao | Hydraulic-facilitated contact lithography apparatus, system and method |
US7830498B2 (en) | 2006-10-10 | 2010-11-09 | Hewlett-Packard Development Company, L.P. | Hydraulic-facilitated contact lithography apparatus, system and method |
US7618752B2 (en) | 2006-10-12 | 2009-11-17 | Hewlett-Packard Development Company, L.P. | Deformation-based contact lithography systems, apparatus and methods |
US7768628B2 (en) | 2006-10-12 | 2010-08-03 | Hewlett-Packard Development Company, L.P. | Contact lithography apparatus and method |
US20080090155A1 (en) * | 2006-10-12 | 2008-04-17 | Stewart Duncan R | Deformation-based contact lithography systems, apparatus and methods |
US20080087636A1 (en) * | 2006-10-12 | 2008-04-17 | Wei Wu | Contact lithography apparatus and method |
US20080090160A1 (en) * | 2006-10-13 | 2008-04-17 | Jason Blackstock | Alignment for contact lithography |
DE112007002430T5 (en) | 2006-10-13 | 2009-09-24 | Hewlett-Packard Development Company, L.P., Houston | Contact lithography apparatus, system and method |
US20080089470A1 (en) * | 2006-10-13 | 2008-04-17 | Walmsley Robert G | Alignment for contact lithography |
US8575663B2 (en) | 2006-11-22 | 2013-11-05 | President And Fellows Of Harvard College | High-sensitivity nanoscale wire sensors |
US9535063B2 (en) | 2006-11-22 | 2017-01-03 | President And Fellows Of Harvard College | High-sensitivity nanoscale wire sensors |
US7930257B2 (en) | 2007-01-05 | 2011-04-19 | Knowm Tech, Llc | Hierarchical temporal memory utilizing nanotechnology |
US8311958B2 (en) | 2007-01-05 | 2012-11-13 | Knowm Tech, Llc | Hierarchical temporal memory methods and systems |
US20110145177A1 (en) * | 2007-01-05 | 2011-06-16 | Knowmtech, Llc. | Hierarchical temporal memory |
US8041653B2 (en) | 2007-01-05 | 2011-10-18 | Knowm Tech, Llc | Method and system for a hierarchical temporal memory utilizing a router hierarchy and hebbian and anti-hebbian learning |
US20100151031A1 (en) * | 2007-03-23 | 2010-06-17 | Desimone Joseph M | Discrete size and shape specific organic nanoparticles designed to elicit an immune response |
US9181092B2 (en) * | 2007-05-07 | 2015-11-10 | Wisconsin Alumni Research Foundation | Semiconductor nanowire thermoelectric materials and devices, and processes for producing same |
US20140024202A1 (en) * | 2007-05-07 | 2014-01-23 | Wisconsin Alumni Research Foundation | Semiconductor nanowire thermoelectric materials and devices, and processes for producing same |
WO2008138361A1 (en) * | 2007-05-09 | 2008-11-20 | Technische Universität München | Mold for generating nanostructures, and mold holder unit |
TWI468878B (en) * | 2008-06-02 | 2015-01-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US20090305151A1 (en) * | 2008-06-02 | 2009-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2131244A3 (en) * | 2008-06-02 | 2012-04-11 | ASML Netherlands BV | Lithographic apparatus and method for measuring a pattern property |
US8264671B2 (en) | 2008-06-02 | 2012-09-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8477289B2 (en) | 2008-06-02 | 2013-07-02 | Asml Netherlands B.V. | Position measurement using natural frequency vibration of a pattern |
US20090296058A1 (en) * | 2008-06-02 | 2009-12-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8446564B2 (en) | 2008-06-02 | 2013-05-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20090323037A1 (en) * | 2008-06-02 | 2009-12-31 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20100227125A1 (en) * | 2009-03-03 | 2010-09-09 | Commissariat A L'energie Atomique | Method to fabricate a mould for lithography by nano-imprinting |
US8486514B2 (en) | 2009-03-03 | 2013-07-16 | Commissariat A L'energie Atomque | Method to fabricate a mould for lithography by nano-imprinting |
US20100227018A1 (en) * | 2009-03-03 | 2010-09-09 | Commissariat A L' Energie Atomique | Method to fabricate a mould for lithography by nano-imprinting |
US8778195B2 (en) | 2009-03-03 | 2014-07-15 | Commissariat A L' Energie Atomique | Method to fabricate a mould for lithography by nano-imprinting |
US8623288B1 (en) | 2009-06-29 | 2014-01-07 | Nanosys, Inc. | Apparatus and methods for high density nanowire growth |
US9297796B2 (en) | 2009-09-24 | 2016-03-29 | President And Fellows Of Harvard College | Bent nanowires and related probing of species |
US10984821B1 (en) | 2014-11-19 | 2021-04-20 | Seagate Technology Llc | Transfer-printed near-field transducer and heat sink |
US9799359B1 (en) | 2014-11-19 | 2017-10-24 | Seagate Technology Llc | Recording head with an on-wafer integrated laser |
US9607638B1 (en) | 2014-11-19 | 2017-03-28 | Seagate Technology Llc | Recording head with an on-wafer integrated laser |
US10069029B1 (en) | 2014-11-19 | 2018-09-04 | Seagate Technology Llc | Transfer-printed photonics |
US11587581B1 (en) | 2014-11-19 | 2023-02-21 | Seagate Technology Llc | Transfer-printed near-field transducer and heat sink |
US9576595B1 (en) | 2014-11-19 | 2017-02-21 | Seagate Technology Llc | Transfer printing an epitaxial layer to a read/write head to form an integral laser |
US10783917B1 (en) | 2016-11-29 | 2020-09-22 | Seagate Technology Llc | Recording head with transfer-printed laser diode unit formed of non-self-supporting layers |
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KR20020088075A (en) | 2002-11-25 |
EP1301944A2 (en) | 2003-04-16 |
WO2001065600A2 (en) | 2001-09-07 |
KR100744884B1 (en) | 2007-08-01 |
WO2001065600A3 (en) | 2002-02-14 |
JP2004500250A (en) | 2004-01-08 |
US6407443B2 (en) | 2002-06-18 |
US20010044200A1 (en) | 2001-11-22 |
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