US4984861A - Low-loss proton exchanged waveguides for active integrated optic devices and method of making same - Google Patents
Low-loss proton exchanged waveguides for active integrated optic devices and method of making same Download PDFInfo
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- US4984861A US4984861A US07/329,123 US32912389A US4984861A US 4984861 A US4984861 A US 4984861A US 32912389 A US32912389 A US 32912389A US 4984861 A US4984861 A US 4984861A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
Definitions
- This invention relates to proton-exchanged active guided wave devices (including intensity and phase modulators), and more particularly to annealed proton-exchanged active devices in LiNbO 3 and LiTaO 3 .
- LiNbO 3 and LiTaO 3 integrated optic circuits are useful in fiber optic gyros (FOGs), photonic switching devices, and intensity/phase modulation systems. Their attributes include low optical loss, low voltage drive, high frequency bandwidth, and small size and weight.
- the principal prior art method of fabricating LiNbO 3 IOCs is by local diffusion of titanium (Ti) into a LiNbO 3 or LiTaO 3 substrate surface (i.e. Ti:LiNbO 3 or Ti:LiTaO 3 ).
- Ti titanium
- a Ti pattern is defined and diffused to form optical waveguides on the substrate surface.
- the titanium diffuses to interstitial sites of the defined waveguide region, acting as an impurity dopant. This increases the ordinary and extraordinary refractive indices of the LiNbO 3 or LiTaO 3 substrate in that region, causing optical wave propagation of either polarization to be confined to the formed waveguide region by total internal reflection.
- An alternative prior art method for fabricating optical waveguides in LiNbO 3 and LiTaO 3 is the proton exchange (PE) process.
- PE proton exchange
- a masked LiNbO 3 or LiTaO 3 substrate is immersed in a molten bath of pure benzoic acid at a temperature below the decomposition point of the acid, causing lithium ions from the LiNbO 3 surface region to be replaced by hydrogen ions from the bath.
- the process locally increases the extraordinary refractive index but decreases the ordinary refractive index, producing a polarizing waveguide. Light polarized along the extraordinary axis is guided but light polarized along the ordinary axis is not guided and leaks into the substrate.
- the PE waveguides are easy to fabricate. PE diffusion occurs at 150-250° C. for 5-30 minutes compared to 900-1100° C. for 4-10 hours for the titanium-diffused guides.
- the PE waveguides fabricated in pure benzoic acid offer a larger refractive index change and, therefore, a tighter mode confinement than the Ti-diffused guides, and they are more immune to optical damage; however, they have four drawbacks.
- the object of the present invention is to provide single polarization, active integrated optic (IO) devices.
- a single polarization IO device includes an IO circuit array having an optical waveguide array and an electrode array disposed in juxtaposition on a major surface of a crystalline material substrate, said optical waveguide array being formed in said major surface by a two step proton exchange (TSPE) process comprising the steps of: immersing said substrate for a period of from two to sixty minutes in a benzoic acid bath at a temperature of from 150° C. to 250° C., and then annealing said bathed substrate for a period of from one to five hours at a temperature of from 300° C. to 400° C.
- TSPE two step proton exchange
- the substrate material comprises either LiNbO 3 or LiTaO 3 .
- the substrate material may include an X-cut, Z-cut, or Y-cut crystal orientation.
- the single polarization IO devices of the present invention retain the electrooptic properties of the undoped LiNbO 3 and LiTaO 3 bulk material. They are low loss, single-polarization, and are compatible with either single-mode or polarization preserving optical fibers. This makes them extremely attractive for active integrated optical devices for use as fiber optic gyro (FOG) IO chips, intensity and/or phase modulators, and switching networks.
- the electrode array is deposited and patterned using photolithographic techniques and electrode materials well known in the art.
- FIG. 1 is a perspective illustration of a fiber optic gyro (FOG) IO chip used in the description of the TSPE process of the present invention
- FIG. 2 is a perspective illustration of one embodiment of an IO interferometer according to the present invention.
- FIG. 3 is a perspective illustration of one embodiment of an IO phase modulator according to the present invention.
- FIG. 4 is a perspective illustration of one embodiment of a directional coupler according to the present invention.
- active IO devices are fabricated using various combinations of PE waveguides.
- a two step proton exchange (TSPE) process is used to create waveguide structures in either LiNbO 3 or LiTaO 3 crystalline materials.
- LiTaO 3 The lower popularity of LiTaO 3 is due primarily to the fact that its Curie temperature (T c is approximately 600° C.) is lower than the temperature needed for waveguide fabrication by metal indiffusion (typically 1000° C.). Because of domain inversion, crystal poling is required after diffusion in order to restore domain alignment and maximize the electrooptic effect for active devices; all of which adds to the fabrication complexity. These limitations, however, are not present in the TSPE process of the present invention.
- a FOG IO circuit 8 includes an X cut crystalline substrate 10, having a major surface 11.
- An optical waveguide array 12 is formed on the major surface.
- the FIG. 1 waveguide array is only exemplary, but includes a Y junction 14, an input guide section 16, and output guide sections 18, 20.
- the IO circuit further includes an electrode array comprising the paired electrodes 21, 22, and 23, 24; each defining IO phase modulators.
- the IO circuit connects to other host system elements through input and output optic fibers 26, and 28, 29 respectively, which are shown in phantom. The fibers are connected to the substrate's input and output guide sections using well known pigtail techniques.
- the substrate material may be either LiNbO 3 or LiTaO 3 .
- the substrate is X-cut crystal, which is the preferred orientation for this circuit geometry.
- Z-cut and Y-cut crystal may also be used.
- the fabrication process begins with deposition of a masking layer of material, such as aluminum (Al), chromium (Cr), titanium (Ti), or silicon oxide (SiO 2 ), deposited on the substrate surface 11.
- a photoresist film is then deposited, ultraviolet-exposed through a mask, and developed to duplicate the masking pattern on the surface to form the Y junctioned waveguide 12, and the pattern is etched to produce the waveguide channels on the surface 11.
- the channel widths vary with the intended guided signal wavelength, but range from 3 to 10 microns.
- the masking pattern limits the proton exchange to the channel etched areas.
- the crystal substrate is then immersed in a pure (concentrated) benzoic acid bath for a time ranging from two to sixty minutes.
- the molten benzoic acid is at a temperature in the range of from 150° C. to 250° C.
- the crystal is then annealed at temperature in the range of from 300° C. to 400° C. for a period of from one to five hours.
- the TSPE process locally increases the extraordinary refractive index (within the waveguide channels) and locally decreases the ordinary refractive index.
- the extraordinary refractive index within the waveguide channels
- the ordinary refractive index decreases the ordinary refractive index.
- a metallic electrode pattern is formed by deposition and photolithographic methods as described earlier to generate appropriate electrode patterns (44), (46), (48), such a shown in FIG. 2.
- an external electric field is applied to the device through the electrodes.
- the stability of the TSPE waveguides was evaluated by comparing the measured fiber-waveguide insertion loss and the Mach-Zehnder switching voltages over time. Within experimental error, neither parameter varied over a six-month period in PE devices which were stored at room temperature. In addition, the fiber-waveguide insertion loss did not vary in samples which were stored at 150° C. for a three-week period.
- FIG. 2 illustrates a Mach-Zehnder interferometer 30 fabricated with the TSPE process of the present invention.
- the interferometer comprises a crystalline material substrate 32, such as LiNbO 3 or LiTaO 3 .
- the substrate material is X-cut, with the extraordinary axis (n e ) along the Z axis, which supports TE mode polarization.
- the substrate includes a PE waveguide array 34, with double Y sections 36, 38 with the Y-junction stem sections 39, 40, and guided sections 41, 42.
- the interferometer embodiment shown is a push-pull type having a common (or ground) electrode 44 and power electrodes 46, 48 deposited by known photolithograpic techniques.
- optical power in guide 39 is split equally by the Y-junction 38 into the guides 41, 42, and recombine in the Y-junction 36.
- the optical path length of the guides 41, 42 (between the Y-junctions 36, 38) can be selectively changed by applying electric potentials between the electrodes 44-48, creating electric fields in the substrate.
- the electrooptic effect of the applied electric field changes the substrate index of refraction, to effectively change the optical path length.
- the electrooptic efficiency of the PE waveguides was determined by comparing the measured voltage response of, for example, Mach-Zehnder interferometers to theoretical predictions.
- the V.sub. ⁇ of a Mach-Zehnder with push-pull electrodes is: ##EQU1## where G is the electrode gap, ⁇ is the overlap integral between the optical and modulating fields, and L is the electrode length.
- FIG. 3 illustrates an IO phase modulator 50 according to the present invention.
- the modulator includes a substrate 52 of either LiNbO 3 or LiTaO 3 , and having a major surface 54.
- a waveguide array comprises the single waveguide 56 deposited on the surface using the TSPE process described hereinbefore.
- the substrate preferably has an X-cut orientation, however, both Z-cut and Y-cut crystal may be used.
- An electrode array includes electrodes 58, 60 deposited on the surface 54 using known photolithograpic techniques.
- voltages V 1 , V 2 applied to the electrodes 58, 60 cause local variation of the substrate refractive index by the electrooptic effect. These variations change the phase velocity of an optical signal propagating through the waveguide 56.
- FIG. 4 illustrates an IO directional coupler 62 according to the present invention.
- the coupler includes a substrate 64 of either LiNbO 3 or LiTaO 3 , and having a major surface 66. Again, the substrate is preferably X-cut orientation, but Z-cut and Y-cut crystal may be used.
- a waveguide array 68 having dual guides 70, 72 is deposited on surface 64 using the TSPE process. The waveguides are proximity coupled in the region 74.
- An electrode array includes electrodes 76, 78 deposited on the surface 66 using known photolithograpic techniques.
- voltages V 1 , V 2 applied to the electrodes 76, 78 control, through the electrooptic effect, the amount of power coupled between the guides 70, 72.
- the electrooptic effect tunes the wavevectors of the optical signals propagating through the guides.
- the present invention includes the fabrication of active IO devices using the TSPE process.
- An active IO device may be generically defined as any device in which the refractive index in an optically guided circuit can be instantaneously changed through the electrooptic effect by application of external electric fields.
Abstract
Description
Claims (22)
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US07/329,123 US4984861A (en) | 1989-03-27 | 1989-03-27 | Low-loss proton exchanged waveguides for active integrated optic devices and method of making same |
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Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5061030A (en) * | 1989-08-15 | 1991-10-29 | Optical Measurement Technology Development Co., Ltd. | Optical integrated modulator |
US5123069A (en) * | 1989-10-26 | 1992-06-16 | Oki Electric Industry Co., Ltd. | Waveguide-type optical switch |
US5175781A (en) * | 1991-10-11 | 1992-12-29 | United Technologies Corporation | Attaching optical fibers to integrated optic chips |
US5193128A (en) * | 1991-12-26 | 1993-03-09 | United Technologies Corporation | Integrated optic modulator with smooth electro-optic bandpass characteristics |
US5205904A (en) * | 1991-03-13 | 1993-04-27 | Matsushita Electric Industrial Co., Ltd. | Method to fabricate frequency doubler devices |
US5231683A (en) * | 1991-10-11 | 1993-07-27 | United Technologies Corporation | Attaching optical fibers to integrated optic chips |
US5253309A (en) * | 1989-06-23 | 1993-10-12 | Harmonic Lightwaves, Inc. | Optical distribution of analog and digital signals using optical modulators with complementary outputs |
US5267336A (en) * | 1992-05-04 | 1993-11-30 | Srico, Inc. | Electro-optical sensor for detecting electric fields |
US5293439A (en) * | 1991-11-12 | 1994-03-08 | Sumitomo Metal Mining Co., Ltd. | Integrated optical circuit for fiber-optics gyroscopes |
US5327279A (en) * | 1992-07-17 | 1994-07-05 | United Technologies Corporation | Apparatus for linearization of optic modulators using a feed-forward predistortion circuit |
US5355424A (en) * | 1991-09-10 | 1994-10-11 | Alcatel, N.V. | Method of operating a semiconductor device as an optical filter and semiconductor device for implementing the method |
US5361157A (en) * | 1992-08-25 | 1994-11-01 | Nippon Hoso Kyokai | Bidirectional light transmission system and optical device therefor |
US5365338A (en) * | 1991-05-28 | 1994-11-15 | The United States Of America As Represented By The Secretary Of The Navy | Wavelength sensor for fiber optic gyroscope |
GB2251764B (en) * | 1991-01-11 | 1995-06-28 | Technophone Ltd | Telephone apparatus with calling line identification |
US5442719A (en) * | 1993-07-21 | 1995-08-15 | Litton Systems, Inc., A Delaware Corporation | Electro-optic waveguides and phase modulators and methods for making them |
US5605856A (en) * | 1995-03-14 | 1997-02-25 | University Of North Carolina | Method for designing an electronic integrated circuit with optical inputs and outputs |
US5875276A (en) * | 1995-08-30 | 1999-02-23 | Ramar Corporation | Guided wave device and method of fabrication thereof |
US5915052A (en) * | 1997-06-30 | 1999-06-22 | Uniphase Telecommunications Products, Inc. | Loop status monitor for determining the amplitude of the signal components of a multi-wavelength optical beam |
US5917974A (en) * | 1997-08-01 | 1999-06-29 | Advanced Photonics Technology, Inc. | Method and apparatus for implementing coupled guiding structures with apodized interaction |
US5982964A (en) * | 1997-06-30 | 1999-11-09 | Uniphase Corporation | Process for fabrication and independent tuning of multiple integrated optical directional couplers on a single substrate |
US6020986A (en) * | 1997-11-21 | 2000-02-01 | Jds Uniphase Corporation | Programmable add-drop module for use in an optical circuit |
US6031849A (en) * | 1997-11-14 | 2000-02-29 | Jds Uniphase Corporation | High power three level fiber laser and method of making same |
US6069729A (en) * | 1999-01-20 | 2000-05-30 | Northwestern University | High speed electro-optic modulator |
US6088500A (en) * | 1997-04-11 | 2000-07-11 | Trw Inc. | Expanded mode wave guide semiconductor modulation |
US6091864A (en) * | 1997-04-10 | 2000-07-18 | Ortel Corporation | Linear optical modulator for providing chirp-free optical signals |
US6151157A (en) * | 1997-06-30 | 2000-11-21 | Uniphase Telecommunications Products, Inc. | Dynamic optical amplifier |
US6185355B1 (en) * | 1998-09-01 | 2001-02-06 | Henry H. Hung | Process for making high yield, DC stable proton exchanged waveguide for active integrated optic devices |
US6226424B1 (en) | 1997-09-19 | 2001-05-01 | Uniphase Telecommunications Products, Inc. | Integrated wavelength-select transmitter |
US6288823B1 (en) * | 1999-10-27 | 2001-09-11 | Texas A&M University System | Slow wave electrooptic light modulator apparatus and method |
US6372284B1 (en) | 1998-06-11 | 2002-04-16 | Optelecom, Inc. | Fluoropolymer coating of lithium niobate integrated optical devices |
US6650819B1 (en) | 2000-10-20 | 2003-11-18 | Konstantin P. Petrov | Methods for forming separately optimized waveguide structures in optical materials |
US20090087133A1 (en) * | 2007-09-28 | 2009-04-02 | Honeywell International Inc. | Devices and methods for spatial filtering |
US20130287332A1 (en) * | 2012-04-26 | 2013-10-31 | Hsin-Shun Huang | Low power electro-optic modulator |
EP3009879A1 (en) * | 2014-10-15 | 2016-04-20 | Ixblue | Electro-optical -phase modulator and modulation method |
JP2020086137A (en) * | 2018-11-26 | 2020-06-04 | 株式会社Xtia | Light modulator and optical comb generator |
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Cited By (40)
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US5253309A (en) * | 1989-06-23 | 1993-10-12 | Harmonic Lightwaves, Inc. | Optical distribution of analog and digital signals using optical modulators with complementary outputs |
US5061030A (en) * | 1989-08-15 | 1991-10-29 | Optical Measurement Technology Development Co., Ltd. | Optical integrated modulator |
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